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    • 2. 发明授权
    • Sequential gas flow oxide deposition technique
    • 顺序气流氧化沉积技术
    • US07399388B2
    • 2008-07-15
    • US10627228
    • 2003-07-25
    • Farhad K. MoghadamMichael S. CoxPadmanabhan KrishnarajThanh N. Pham
    • Farhad K. MoghadamMichael S. CoxPadmanabhan KrishnarajThanh N. Pham
    • C23C14/34C23C16/00
    • C23C16/45542C23C16/402C23C16/507
    • A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.
    • 一种在基板上沉积石英玻璃绝缘膜的方法。 在一个实施方案中,该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物,使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基,同时偏置衬底以促进溅射效应,将含硅反应物转化为石英玻璃绝缘化合物,其中第二反应物中所有原子组分的平均原子质量小于 或等于氧的平均原子质量; 并重复曝光,吹扫/排空和曝光序列多次,直至达到所需的膜厚度。
    • 7. 发明授权
    • Chamber clean method using remote and in situ plasma cleaning systems
    • 室内清洁方法使用远程和原位等离子体清洁系统
    • US07588036B2
    • 2009-09-15
    • US10187817
    • 2002-07-01
    • Zhenjiang CuiMichael S. CoxCanfeng LaiPaddy Krishnaraj
    • Zhenjiang CuiMichael S. CoxCanfeng LaiPaddy Krishnaraj
    • B08B7/00B08B7/04
    • H01J37/32862C23C16/4405H01J2237/022Y10S438/905
    • A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.
    • 一种用于从衬底处理室的一个或多个内表面去除不想要的沉积物的方法。 根据一个实施例,该方法包括在衬底处理室内的衬底上执行衬底处理操作,然后将衬底转移出衬底处理室; 将第一蚀刻剂气体流入远程等离子体源,从蚀刻剂气体形成反应性物质并将反应物质输送到基底处理室中以去除不需要的沉积物堆积的第一部分; 然后将第二蚀刻剂气体流入基板处理室,并从第二气体在基板处理室内形成等离子体,以便去除不需要的沉积物积聚的第二部分。