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1. 发明授权

US5182758A Periodic gain-type semiconductor laser device 失效
标题翻译：周期性增益型半导体激光器件
公开(公告)号：US5182758A
公开(公告)日：1993-01-26
申请号：US802118
申请日：1991-12-04
申请人： Mototaka Taneya , Fumihiro Konushi , Toshiyuki Okumura , Haruhisa Takiguchi
发明人： Mototaka Taneya , Fumihiro Konushi , Toshiyuki Okumura , Haruhisa Takiguchi
IPC分类号： H01S5/00 , H01S5/12 , H01S5/22 , H01S5/227 , H01S5/323
CPC分类号： H01S5/1228 , H01S5/227 , H01S5/2201 , H01S5/32308
摘要： A periodic gain-type semiconductor laser device in which a mesa stripe has wide portions and narrow portions alternately arranged with a period that is an integral multiple of the half-wavelength of the emitted light. A multilayer structure including an n-AlGaAs first cladding layer 103 and an AlGaAs non-doped active layer 104 formed on the mesa stripe also have wide portions and narrow portions. An n-AlGaAs current confining layer 106 covers the sides of the AlGaAs non-doped active layer 104. The height of the top surface of the n-AlGaAs current confining layer 106 matches the height of the AlGaAs non-doped active layer 104. A p-AlGaAs second cladding layer 105 is formed on the AlGaAs non-doped active layer 104 and the current confining layer 106. A driving current is not injected into the narrow portions of the AlGaAs non-doped active layer 104.
摘要翻译：一种周期性增益型半导体激光装置，其中台面条具有宽的部分，并且窄周期以发射的光的半波长的整数倍的周期交替布置。包括形成在台面条上的n-AlGaAs第一包层103和AlGaAs非掺杂有源层104的多层结构也具有宽部分和窄部分。 n-AlGaAs电流限制层106覆盖AlGaAs非掺杂有源层104的侧面.n-AlGaAs电流限制层106的顶表面的高度与AlGaAs非掺杂有源层104的高度匹配。在AlGaAs非掺杂有源层104和电流限制层106上形成p-AlGaAs第二包层105.驱动电流不被注入到AlGaAs非掺杂有源层104的窄部分中。

2. 发明授权

US5335241A Buried stripe type semiconductor laser device 失效
标题翻译：埋条式半导体激光器件
公开(公告)号：US5335241A
公开(公告)日：1994-08-02
申请号：US751923
申请日：1991-08-30
申请人： Toshiyuki Okumura , Kazuhiko Inoguchi , Fumihiro Konushi , Haruhisa Takiguchi
发明人： Toshiyuki Okumura , Kazuhiko Inoguchi , Fumihiro Konushi , Haruhisa Takiguchi
IPC分类号： H01L33/00 , H01S5/22 , H01S5/227 , H01S5/323 , H01S3/19
CPC分类号： H01S5/227 , H01L33/0062 , H01S5/2201 , H01S5/32391
摘要： A buried stripe type semiconductor laser device having a mesa stripe whose side faces are {111} facets and having a current confinement structure under epitaxial layers burying the mesa stripe is disclosed. The buried stripe type semiconductor laser device comprises a (100) semiconductor substrate having a stripe-shaped ridge in the direction, a multi-layer film of a double hetero structure formed on the upper surface of the stripe-shaped ridge. The mutil-layer film includes a laser oscillating active layer of a smaller width than that of the stripe-shaped ridge. The current confinement means are formed at both sides of the mesa stripe on the semiconductor substrate. In addition, a method of fabricating a buried stripe type semiconductor laser device having no raised portion above a mesa stripe of a substrate is disclosed. The laser device can be mounted in position with the epitaxial layer side down, without the mesa stripe being damaged or strained.
摘要翻译：公开了一种埋设条状半导体激光器件，其具有侧面为{111}面的台面条，并且在埋设台面条的外延层下具有电流限制结构。掩埋条型半导体激光器件包括具有<011>方向上的条状脊的（100）半导体衬底，形成在条形脊的上表面上的双异质结的多层膜。残膜层包括宽度小于条状脊的激光振荡活性层。电流限制装置形成在半导体衬底上的台面条的两侧。另外，公开了一种在衬底的台面条之上没有凸起部分的掩埋条状半导体激光器件的制造方法。激光器件可以安装在外延层一侧的位置，而不会使台面条被损坏或变形。

3. 发明授权

US5070510A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5070510A
公开(公告)日：1991-12-03
申请号：US625169
申请日：1990-12-10
申请人： Fumihiro Konushi , Hiroshi Nakatu , Kazuhiko Inoguchi , Toshiyuki Okumura , Akinori Seki , Haruhisa Takiguchi , Chitose Nakanishi , Satoshi Sugahara , Hiroaki Kudo
发明人： Fumihiro Konushi , Hiroshi Nakatu , Kazuhiko Inoguchi , Toshiyuki Okumura , Akinori Seki , Haruhisa Takiguchi , Chitose Nakanishi , Satoshi Sugahara , Hiroaki Kudo
IPC分类号： H01L21/20 , H01L33/00 , H01S5/12 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/40
CPC分类号： H01S5/227 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L33/0062 , H01S5/20 , H01S5/4031 , H01S5/12 , H01S5/1228 , H01S5/2059 , H01S5/2201 , H01S5/2213 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/4037
摘要： A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.

4. 发明授权

US5815615A Integrated optical control element and a method for fabricating the same and optical integrated circuit element and optical integrated circuit device using the same 失效
标题翻译：集成光控元件及其制造方法以及使用其的光集成电路元件和光集成电路器件
公开(公告)号：US5815615A
公开(公告)日：1998-09-29
申请号：US579437
申请日：1995-12-27
申请人： Mototaka Taneya , Fumihiro Konushi , Hidenori Kawanishi , Tatsuya Morioka , Atsushi Shimonaka
发明人： Mototaka Taneya , Fumihiro Konushi , Hidenori Kawanishi , Tatsuya Morioka , Atsushi Shimonaka
IPC分类号： G02B6/122 , G02B6/12 , G02B6/125 , G02B6/13 , G02B6/34 , G02B6/42 , G02F2/00 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/40 , H01S5/50 , G02B6/26
CPC分类号： G02B6/4246 , G02B6/12004 , G02B6/12007 , G02B6/125 , G02B6/42 , H01S5/026 , G02B2006/12104 , G02B6/29361 , H01S5/0262 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/32316 , H01S5/4031 , H01S5/4056 , H01S5/50
摘要： The integrated optical control element of this invention includes: a first waveguide for allowing light incident from outside to propagate therein; a multilayer structure for allowing the light which has propagated in the first waveguide to be incident thereon and for transmitting the light therethrough or reflecting the light therefrom, the multilayer structure including at least one layer having a refractive index different from an equivalent refractive index of a region with which the at least one layer is in contact; and a second waveguide for receiving at least part of the light transmitted through or reflected from the multilayer structure.
摘要翻译：本发明的集成光学控制元件包括：用于允许从外部入射的光在其中传播的第一波导; 用于允许在第一波导中传播的光入射在其上并用于透射光或反射光的多层结构，所述多层结构包括至少一层折射率不同于所述至少一层与其接触的区域; 以及第二波导，用于接收透射通过或从多层结构反射的光的至少一部分。

5. 发明授权

US5838854A Integrated optical control element and a method for fabricating the same and optical integrated circuit element and optical integrated circuit device using the same 失效
公开(公告)号：US5838854A
公开(公告)日：1998-11-17
申请号：US955161
申请日：1997-10-21
申请人： Mototaka Taneya , Fumihiro Konushi , Hidenori Kawanishi , Tatsuya Morioka , Atsushi Shimonaka
发明人： Mototaka Taneya , Fumihiro Konushi , Hidenori Kawanishi , Tatsuya Morioka , Atsushi Shimonaka
IPC分类号： G02B6/122 , G02B6/12 , G02B6/125 , G02B6/13 , G02B6/34 , G02B6/42 , G02F2/00 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/40 , H01S5/50 , G02B1/295 , G02B6/26
CPC分类号： G02B6/4246 , G02B6/12004 , G02B6/12007 , G02B6/125 , G02B6/42 , H01S5/026 , G02B2006/12104 , G02B6/29361 , H01S5/0262 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/32316 , H01S5/4031 , H01S5/4056 , H01S5/50
摘要： The integrated optical control element of this invention includes: a first waveguide for allowing light incident from outside to propagate therein; a multilayer structure for allowing the light which has propagated in the first waveguide to be incident thereon and for transmitting the light therethrough or reflecting the light therefrom, the multilayer structure including at least one layer having a refractive index different from an equivalent refractive index of a region with which the at least one layer is in contact; and a second waveguide for receiving at least part of the light transmitted through or reflected from the multilayer structure.

6. 发明授权

US5375135A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5375135A
公开(公告)日：1994-12-20
申请号：US48887
申请日：1993-04-15
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/10 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/1039 , H01S5/227 , H01S5/2275 , H01S5/3415 , H01S5/3421 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:L.sub.z
摘要翻译：半导体激光装置包括基板和形成在基板顶面上的叠层结构。层压结构包括（a）第一和第二引导层和（b）置于第一和第二引导层之间的化合物半导体的量子阱结构。量子阱结构用作器件的谐振器，并且包括至少一个量子阱层和至少一个势垒层。量子阱层具有厚度Lz，势垒层的能隙大于量子阱层的能隙，从而在量子阱层的导带的底部和底部的量子阱层的底部之间形成能量差V0 阻挡层的导带。满足式（I）所示的关系：Lz

7. 发明授权

US5351258A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5351258A
公开(公告)日：1994-09-27
申请号：US99206
申请日：1993-07-29
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/00 , H01S5/028 , H01S5/22 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34306 , H01S5/34313
摘要： A semiconductor laser device of the present invention includes: a semiconductor substrate having a top face and a bottom face; a multi-layered structure formed on the top face of the semiconductor substrate, the multi-layered structure including an active layer; a stripe-shaped ridge portion which is formed on a first region of a top face of the multi-layered structure and which extends along a cavity length direction; a current blocking layer which covers both side faces of the ridge portion and a second region of the top face of the multi-layered structure; a first electrode formed at least on a top face of the ridge portion; and a second electrode formed on the bottom face of the semiconductor substrate, wherein the current blocking layer includes an insulating film and a resin film formed on the insulating film.
摘要翻译：本发明的半导体激光器件包括：具有顶面和底面的半导体衬底; 形成在所述半导体衬底的顶面上的多层结构，所述多层结构包括有源层; 形成在所述多层结构的顶面的第一区域上且沿着空腔长度方向延伸的条状的脊部; 覆盖所述脊部的两个侧面的电流阻挡层和所述多层结构的顶面的第二区域; 至少形成在所述脊部的顶面上的第一电极; 以及形成在所述半导体衬底的底面上的第二电极，其中所述电流阻挡层包括绝缘膜和形成在所述绝缘膜上的树脂膜。

8. 发明授权

US5657337A Semiconductor laser device having a resonator of a particular length for reducing threshold current density 失效
标题翻译：具有用于降低阈值电流密度的具有特定长度的谐振器的半导体激光器件
公开(公告)号：US5657337A
公开(公告)日：1997-08-12
申请号：US629655
申请日：1996-04-09
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/227 , H01S5/2275 , H01S5/3415 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:L.sub.z .ltoreq.h / 2 (2m*V.sub.0).sup.1/2 (I)wherein h is Planck's constant and m* is the effective mass of electrons within the quantum well layer.
摘要翻译：半导体激光装置包括基板和形成在基板顶面上的叠层结构。层压结构包括（a）第一和第二引导层和（b）置于第一和第二引导层之间的化合物半导体的量子阱结构。量子阱结构用作器件的谐振器，并且包括至少一个量子阱层和至少一个势垒层。量子阱层具有厚度Lz，势垒层的能隙大于量子阱层的能隙，从而在量子阱层的导带的底部和底部的量子阱层的底部之间形成能量差V0 阻挡层的导带。满足式（I）表示的关系：Lz

9. 发明授权

US5506856A Semiconductor laser device having a resonator of particular length for reduced threshold current density 失效
标题翻译：具有特定长度的谐振器以降低阈值电流密度的半导体激光器件
公开(公告)号：US5506856A
公开(公告)日：1996-04-09
申请号：US307184
申请日：1994-11-17
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/227 , H01S5/2275 , H01S5/3415 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.O between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:L.sub.z .ltoreq.h / 2 (2m.sup.* V.sub.O).sup.1/2 (I)wherein h is Planck's constant and m.sup.* is the effective mass of electrons within the quantum well layer.
摘要翻译：半导体激光装置包括基板和形成在基板顶面上的叠层结构。层压结构包括（a）第一和第二引导层和（b）置于第一和第二引导层之间的化合物半导体的量子阱结构。量子阱结构用作器件的谐振器，并且包括至少一个量子阱层和至少一个势垒层。量子阱层具有厚度Lz，势垒层的能隙大于量子阱层的能隙，从而形成量子阱层的导带的底部与底部的能量差V o 阻挡层的导带。满足公式（I）表示的关系：Lz

10. 发明授权

US06181723B2 Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same 失效
标题翻译：具有碳和II族元素原子的半导体发光器件作为p型掺杂剂及其制造方法
公开(公告)号：US06181723B2
公开(公告)日：2001-01-30
申请号：US09073106
申请日：1998-05-05
申请人： Nobuhiro Okubo , Masaya Ishida , Yoshiro Akagi , Masanori Watanabe , Fumihiro Konushi
发明人： Nobuhiro Okubo , Masaya Ishida , Yoshiro Akagi , Masanori Watanabe , Fumihiro Konushi
IPC分类号： H01S500
CPC分类号： H01L33/305 , H01L33/145 , H01S5/2206 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/305 , H01S5/3054
摘要： A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.
摘要翻译：发光器件包括：多个n型III-V族化合物半导体层; 多个p型III-V族化合物半导体层; 和活性层。碳原子和II族元素原子都被添加到多个p型III-V族化合物半导体层中的至少一个中。或者，碳原子和Si原子都被添加到多个n型III-V族化合物半导体层中的至少一个中。另一半导体发光器件具有形成于双异质（DH）结结构上的电流阻挡结构，并且电流阻挡结构至少包括两层n型电流阻挡层，其包括Se掺杂n型第一电流阻塞提供更靠近DH结结构的层，以及形成在n型第一电流阻挡层上的Si掺杂的n型第二电流阻挡层。

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