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1. 发明授权

US5375135A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5375135A
公开(公告)日：1994-12-20
申请号：US48887
申请日：1993-04-15
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/10 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/1039 , H01S5/227 , H01S5/2275 , H01S5/3415 , H01S5/3421 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:L.sub.z
摘要翻译：半导体激光装置包括基板和形成在基板顶面上的叠层结构。层压结构包括（a）第一和第二引导层和（b）置于第一和第二引导层之间的化合物半导体的量子阱结构。量子阱结构用作器件的谐振器，并且包括至少一个量子阱层和至少一个势垒层。量子阱层具有厚度Lz，势垒层的能隙大于量子阱层的能隙，从而在量子阱层的导带的底部和底部的量子阱层的底部之间形成能量差V0 阻挡层的导带。满足式（I）所示的关系：Lz

2. 发明授权

US5351258A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5351258A
公开(公告)日：1994-09-27
申请号：US99206
申请日：1993-07-29
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/00 , H01S5/028 , H01S5/22 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34306 , H01S5/34313
摘要： A semiconductor laser device of the present invention includes: a semiconductor substrate having a top face and a bottom face; a multi-layered structure formed on the top face of the semiconductor substrate, the multi-layered structure including an active layer; a stripe-shaped ridge portion which is formed on a first region of a top face of the multi-layered structure and which extends along a cavity length direction; a current blocking layer which covers both side faces of the ridge portion and a second region of the top face of the multi-layered structure; a first electrode formed at least on a top face of the ridge portion; and a second electrode formed on the bottom face of the semiconductor substrate, wherein the current blocking layer includes an insulating film and a resin film formed on the insulating film.
摘要翻译：本发明的半导体激光器件包括：具有顶面和底面的半导体衬底; 形成在所述半导体衬底的顶面上的多层结构，所述多层结构包括有源层; 形成在所述多层结构的顶面的第一区域上且沿着空腔长度方向延伸的条状的脊部; 覆盖所述脊部的两个侧面的电流阻挡层和所述多层结构的顶面的第二区域; 至少形成在所述脊部的顶面上的第一电极; 以及形成在所述半导体衬底的底面上的第二电极，其中所述电流阻挡层包括绝缘膜和形成在所述绝缘膜上的树脂膜。

3. 发明授权

US5657337A Semiconductor laser device having a resonator of a particular length for reducing threshold current density 失效
标题翻译：具有用于降低阈值电流密度的具有特定长度的谐振器的半导体激光器件
公开(公告)号：US5657337A
公开(公告)日：1997-08-12
申请号：US629655
申请日：1996-04-09
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/227 , H01S5/2275 , H01S5/3415 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:L.sub.z .ltoreq.h / 2 (2m*V.sub.0).sup.1/2 (I)wherein h is Planck's constant and m* is the effective mass of electrons within the quantum well layer.
摘要翻译：半导体激光装置包括基板和形成在基板顶面上的叠层结构。层压结构包括（a）第一和第二引导层和（b）置于第一和第二引导层之间的化合物半导体的量子阱结构。量子阱结构用作器件的谐振器，并且包括至少一个量子阱层和至少一个势垒层。量子阱层具有厚度Lz，势垒层的能隙大于量子阱层的能隙，从而在量子阱层的导带的底部和底部的量子阱层的底部之间形成能量差V0 阻挡层的导带。满足式（I）表示的关系：Lz

4. 发明授权

US5506856A Semiconductor laser device having a resonator of particular length for reduced threshold current density 失效
标题翻译：具有特定长度的谐振器以降低阈值电流密度的半导体激光器件
公开(公告)号：US5506856A
公开(公告)日：1996-04-09
申请号：US307184
申请日：1994-11-17
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/227 , H01S5/2275 , H01S5/3415 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.O between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:L.sub.z .ltoreq.h / 2 (2m.sup.* V.sub.O).sup.1/2 (I)wherein h is Planck's constant and m.sup.* is the effective mass of electrons within the quantum well layer.
摘要翻译：半导体激光装置包括基板和形成在基板顶面上的叠层结构。层压结构包括（a）第一和第二引导层和（b）置于第一和第二引导层之间的化合物半导体的量子阱结构。量子阱结构用作器件的谐振器，并且包括至少一个量子阱层和至少一个势垒层。量子阱层具有厚度Lz，势垒层的能隙大于量子阱层的能隙，从而形成量子阱层的导带的底部与底部的能量差V o 阻挡层的导带。满足公式（I）表示的关系：Lz

5. 发明授权

US5335241A Buried stripe type semiconductor laser device 失效
标题翻译：埋条式半导体激光器件
公开(公告)号：US5335241A
公开(公告)日：1994-08-02
申请号：US751923
申请日：1991-08-30
申请人： Toshiyuki Okumura , Kazuhiko Inoguchi , Fumihiro Konushi , Haruhisa Takiguchi
发明人： Toshiyuki Okumura , Kazuhiko Inoguchi , Fumihiro Konushi , Haruhisa Takiguchi
IPC分类号： H01L33/00 , H01S5/22 , H01S5/227 , H01S5/323 , H01S3/19
CPC分类号： H01S5/227 , H01L33/0062 , H01S5/2201 , H01S5/32391
摘要： A buried stripe type semiconductor laser device having a mesa stripe whose side faces are {111} facets and having a current confinement structure under epitaxial layers burying the mesa stripe is disclosed. The buried stripe type semiconductor laser device comprises a (100) semiconductor substrate having a stripe-shaped ridge in the direction, a multi-layer film of a double hetero structure formed on the upper surface of the stripe-shaped ridge. The mutil-layer film includes a laser oscillating active layer of a smaller width than that of the stripe-shaped ridge. The current confinement means are formed at both sides of the mesa stripe on the semiconductor substrate. In addition, a method of fabricating a buried stripe type semiconductor laser device having no raised portion above a mesa stripe of a substrate is disclosed. The laser device can be mounted in position with the epitaxial layer side down, without the mesa stripe being damaged or strained.
摘要翻译：公开了一种埋设条状半导体激光器件，其具有侧面为{111}面的台面条，并且在埋设台面条的外延层下具有电流限制结构。掩埋条型半导体激光器件包括具有<011>方向上的条状脊的（100）半导体衬底，形成在条形脊的上表面上的双异质结的多层膜。残膜层包括宽度小于条状脊的激光振荡活性层。电流限制装置形成在半导体衬底上的台面条的两侧。另外，公开了一种在衬底的台面条之上没有凸起部分的掩埋条状半导体激光器件的制造方法。激光器件可以安装在外延层一侧的位置，而不会使台面条被损坏或变形。

6. 发明授权

US5182758A Periodic gain-type semiconductor laser device 失效
标题翻译：周期性增益型半导体激光器件
公开(公告)号：US5182758A
公开(公告)日：1993-01-26
申请号：US802118
申请日：1991-12-04
申请人： Mototaka Taneya , Fumihiro Konushi , Toshiyuki Okumura , Haruhisa Takiguchi
发明人： Mototaka Taneya , Fumihiro Konushi , Toshiyuki Okumura , Haruhisa Takiguchi
IPC分类号： H01S5/00 , H01S5/12 , H01S5/22 , H01S5/227 , H01S5/323
CPC分类号： H01S5/1228 , H01S5/227 , H01S5/2201 , H01S5/32308
摘要： A periodic gain-type semiconductor laser device in which a mesa stripe has wide portions and narrow portions alternately arranged with a period that is an integral multiple of the half-wavelength of the emitted light. A multilayer structure including an n-AlGaAs first cladding layer 103 and an AlGaAs non-doped active layer 104 formed on the mesa stripe also have wide portions and narrow portions. An n-AlGaAs current confining layer 106 covers the sides of the AlGaAs non-doped active layer 104. The height of the top surface of the n-AlGaAs current confining layer 106 matches the height of the AlGaAs non-doped active layer 104. A p-AlGaAs second cladding layer 105 is formed on the AlGaAs non-doped active layer 104 and the current confining layer 106. A driving current is not injected into the narrow portions of the AlGaAs non-doped active layer 104.
摘要翻译：一种周期性增益型半导体激光装置，其中台面条具有宽的部分，并且窄周期以发射的光的半波长的整数倍的周期交替布置。包括形成在台面条上的n-AlGaAs第一包层103和AlGaAs非掺杂有源层104的多层结构也具有宽部分和窄部分。 n-AlGaAs电流限制层106覆盖AlGaAs非掺杂有源层104的侧面.n-AlGaAs电流限制层106的顶表面的高度与AlGaAs非掺杂有源层104的高度匹配。在AlGaAs非掺杂有源层104和电流限制层106上形成p-AlGaAs第二包层105.驱动电流不被注入到AlGaAs非掺杂有源层104的窄部分中。

7. 发明授权

US5070510A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5070510A
公开(公告)日：1991-12-03
申请号：US625169
申请日：1990-12-10
申请人： Fumihiro Konushi , Hiroshi Nakatu , Kazuhiko Inoguchi , Toshiyuki Okumura , Akinori Seki , Haruhisa Takiguchi , Chitose Nakanishi , Satoshi Sugahara , Hiroaki Kudo
发明人： Fumihiro Konushi , Hiroshi Nakatu , Kazuhiko Inoguchi , Toshiyuki Okumura , Akinori Seki , Haruhisa Takiguchi , Chitose Nakanishi , Satoshi Sugahara , Hiroaki Kudo
IPC分类号： H01L21/20 , H01L33/00 , H01S5/12 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/40
CPC分类号： H01S5/227 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L33/0062 , H01S5/20 , H01S5/4031 , H01S5/12 , H01S5/1228 , H01S5/2059 , H01S5/2201 , H01S5/2213 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/4037
摘要： A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.

8. 发明申请

US20130010294A1 OPTICAL MEASUREMENT ANALYSIS DEVICE, STORAGE ROOM, ELECTROMAGNETIC-WAVE GENERATING DEVICE, AND OPTICAL MEASUREMENT ANALYSIS METHOD 审中-公开
标题翻译：光学测量分析装置，存储室，电磁波发生装置和光学测量分析方法
公开(公告)号：US20130010294A1
公开(公告)日：2013-01-10
申请号：US13531140
申请日：2012-06-22
申请人： Kyoko MATSUDA , Toshiyuki Okumura
发明人： Kyoko MATSUDA , Toshiyuki Okumura
IPC分类号： G01J3/28
CPC分类号： G01N21/3563
摘要： There is provided an optical measurement analysis device capable of applying light to substantially the entire surface of a to-be-analyzed object for improving the analysis accuracy. The optical measurement analysis device according to the present embodiment includes a container, a light source, a light irradiation unit, a light reception unit, a spectroscope unit, and an analyzing unit for analyzing an optical spectrum obtained by the spectroscope unit. The container has an inner wall adapted to reflect light reflected by the to-be-analyzed object and light transmitted therethrough.
摘要翻译：提供了一种光学测量分析装置，其能够基本上对待分析对象的整个表面施加光，以提高分析精度。根据本实施例的光学测量分析装置包括容器，光源，光照射单元，光接收单元，分光单元和用于分析由分光单元获得的光谱的分析单元。该容器具有适于反射由被分析物体反射的光的内壁和透过其中的光。

9. 发明授权

US07864412B2 Semiconductor optical amplifier device amplifying external light signal and driving apparatus therefor 有权
标题翻译：放大外部光信号的半导体光放大器装置及其驱动装置
公开(公告)号：US07864412B2
公开(公告)日：2011-01-04
申请号：US12018034
申请日：2008-01-22
申请人： Kyoko Matsuda , Toshiyuki Okumura
发明人： Kyoko Matsuda , Toshiyuki Okumura
IPC分类号： H01S5/00 , H04B10/12
CPC分类号： H01S5/50 , H01S5/024 , H01S5/02415 , H01S5/0609 , H01S5/06251 , H01S5/06821 , H01S5/0683 , H01S2301/02
摘要： An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of “1” or “0”. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.
摘要翻译：有源层具有由InGaAsP形成的量子阱结构，并且包括可饱和吸收区域和光学放大区域。对于可饱和吸收区域，通过p电极施加电压，与光放大区域无关。对于光放大区域，电流分别通过p电极注入。通过将白噪声的光噪声添加到假设二进制光强度为“1”或“0”的光信号中，产生通过入射平面进入的输入光引脚。可饱和吸收区域和光放大区域形成为波形转换元件提供双稳半导体激光器的条件。

10. 发明申请

US20090003769A1 OPTICAL ISOLATOR 审中-公开
标题翻译：光学隔离器
公开(公告)号：US20090003769A1
公开(公告)日：2009-01-01
申请号：US12126786
申请日：2008-05-23
申请人： Yasuo FUKAI , Toshiyuki Okumura
发明人： Yasuo FUKAI , Toshiyuki Okumura
IPC分类号： G02B6/26 , G02B6/12
CPC分类号： G02B6/122 , G02B6/2746 , G02F1/0147
摘要： On a surface of an Si layer of a substrate, a plurality of optical waveguides are formed that extend linearly in the Y-axis direction and that are separated from each other by a predetermined spacing in the X-axis direction. These optical waveguides each have a width that monotonously increases in the X-axis direction such that an amount of change of the equivalent refractive index of optical waveguides per unit length is constant in the X-axis direction. In this way, an optical isolator is obtained that can operate for an input light in any state of polarization and that can remove a returned light in any state of polarization without allowing the light to return to an input portion.
摘要翻译：在基板的Si层的表面上形成有在X轴方向上以规定的间隔在Y轴方向上呈线状延伸的多个光波导。这些光波导各自具有在X轴方向上单调增加的宽度，使得每单位长度的光波导的当量折射率的变化量在X轴方向上恒定。以这种方式，获得可以以任何偏振状态对输入光进行操作的光学隔离器，并且可以在任何偏振状态下去除返回的光，而不允许光返回到输入部分。

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