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1. 发明授权

US09929530B2 Optical semiconductor device 有权
公开(公告)号：US09929530B2
公开(公告)日：2018-03-27
申请号：US15249691
申请日：2016-08-29
申请人： Mitsubishi Electric Corporation
发明人： Yosuke Suzuki , Yuichiro Okunuki , Go Sakaino , Naoki Nakamura , Ryoko Suzuki
IPC分类号： H01S5/022 , H01S5/323 , H01S5/16 , H01S5/32 , H01S5/0683 , H01S5/227 , H01S5/22
CPC分类号： H01S5/02236 , H01L2224/48091 , H01S5/02212 , H01S5/02252 , H01S5/02276 , H01S5/0683 , H01S5/164 , H01S5/2224 , H01S5/2275 , H01S5/3213 , H01S5/32316 , H01S5/3235 , H01S2301/18 , H01L2924/00014
摘要： An optical semiconductor device has a semiconductor laser which emits front-end-surface-side emergent light on the front end surface side and emits rear-end-surface-side emergent light on the rear end surface side, and a mount substrate having the semiconductor laser provided on its front surface. The rear-end-surface-side emergent light is emitted while having an emergence optical axis that extends away from the mount substrate with increase in distance from the rear end surface.

2. 发明申请

US20160312981A1 LIGHT EMITTING MODULE 有权
标题翻译：发光模块
公开(公告)号：US20160312981A1
公开(公告)日：2016-10-27
申请号：US15136241
申请日：2016-04-22
申请人： LG ELECTRONICS INC.
发明人： Jun PARK , Byungwoo JEOUNG , Sangok YEO
IPC分类号： F21V13/12 , F21S8/10 , F21V29/70 , F21V5/04 , F21V9/16 , F21V7/00
CPC分类号： F21S41/14 , F21S41/135 , F21S41/143 , F21S41/16 , F21S41/17 , F21S41/19 , F21S41/255 , F21S41/285 , F21S41/295 , F21S41/321 , F21S41/36 , F21S41/365 , F21S41/395 , F21S45/47 , F21V5/04 , F21V7/0033 , F21V7/0041 , F21V9/30 , F21V13/04 , F21V13/12 , F21V14/04 , F21V29/51 , F21V29/70 , F21V29/713 , F21V29/76 , F21Y2115/10 , F21Y2115/30 , H01S5/32316
摘要： A light-emitting module is disclosed. The light-emitting module includes a condensing lens for condensing incident light into a space, a light source for providing first light to pass through the condensing lens, a first optical path conversion member for reflecting the first light to provide first reflected light to pass through the condensing lens, a second optical path conversion member for reflecting the first reflected light to provide second reflected light to pass through the condensing lens and a wavelength conversion unit for receiving the second reflected light, converting a wavelength of the received second reflected light, and radiating light the wavelength of which has been converted.
摘要翻译：公开了一种发光模块。发光模块包括用于将入射光聚光到空间中的聚光透镜，用于提供第一光以通过聚光透镜的光源，用于反射第一光以提供第一反射光以通过的第一光路转换构件聚光透镜，用于反射第一反射光以提供第二反射光以通过聚光透镜的第二光路转换部件和用于接收第二反射光的波长转换单元，转换接收的第二反射光的波长，以及辐射其波长已被转换的光。

3. 发明授权

US08658449B2 Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same 有权
标题翻译：半导体层及其制造方法，激光二极管及其制造方法
公开(公告)号：US08658449B2
公开(公告)日：2014-02-25
申请号：US12662099
申请日：2010-03-31
申请人： Naoki Jogan , Takahiro Arakida
发明人： Naoki Jogan , Takahiro Arakida
IPC分类号： H01L21/18 , C30B25/14
CPC分类号： H01L21/02546 , H01L21/02395 , H01L21/02579 , H01L21/0262 , H01S5/18311 , H01S5/18347 , H01S5/3054 , H01S5/32316 , H01S2304/00 , H01S2304/04
摘要： A method of manufacturing a semiconductor layer with which inactivation of impurity is able to be inhibited by a simple method, a semiconductor layer in which inactivation of impurity is inhibited, a method of manufacturing a laser diode with which inactivation of impurity is able to be inhibited by a simple method, and a laser diode including a semiconductor layer in which inactivation of impurity is inhibited are provided. In the method of manufacturing a semiconductor layer, after a semiconductor layer is formed by epitaxial growth with the use of AsH3, supply of AsH3 is stopped without separately supplying new gas when process temperature is 500 deg C. or more.
摘要翻译：通过简单的方法制造能够抑制杂质失活的半导体层的制造方法，抑制杂质失活的半导体层，能够抑制杂质失活的激光二极管的制造方法通过简单的方法，提供了包含抑制杂质失活的半导体层的激光二极管。在制造半导体层的方法中，在使用AsH3通过外延生长形成半导体层之后，当处理温度为500℃以上时，不间断地供给新气体而停止供给AsH3。

4. 发明授权

US07852898B2 Semiconductor laser device and method for manufacturing the same 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07852898B2
公开(公告)日：2010-12-14
申请号：US12235320
申请日：2008-09-22
申请人： Takeshi Yokoyama , Takayuki Kashima , Kouji Makita
发明人： Takeshi Yokoyama , Takayuki Kashima , Kouji Makita
IPC分类号： H01S5/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/028 , H01S5/0281 , H01S5/32316 , H01S5/34313 , H01S5/34326 , H01S5/4031 , H01S5/4087
摘要： On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding layers 5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure 20 is formed so as to have a second lower cladding layer 13, a second active layer 14 with a second quantum well structure and a second upper cladding layer 15, 17, which are layered in this order, thereby forming a second resonator. End face coating films 31, 32 are formed on facets of the first and the second resonators, and a nitrogen-containing layer 30 is formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.
摘要翻译：在作为半导体基板1的一个主面的一部分的第一区域上，形成第一半导体激光结构体10，具有第一下部包层3，具有第一量子阱结构的第一有源层4和第一上覆层5,7，其从半导体衬底侧依次层叠，从而形成第一谐振器。在与第一区域不同的第二区域上形成第二半导体激光器结构20，以具有第二下部包层13，具有第二量子阱结构的第二有源层14和第二上部包层15， 17，其按顺序分层，从而形成第二谐振器。端面涂膜31,32形成在第一和第二谐振器的小面上，并且在第一和第二谐振器的小面和小面涂膜之间形成含氮层30。在具有单片形成的高输出双波长激光器的半导体激光装置中，能够抑制激光器的高输出运转时的COD电平的降低。

5. 发明授权

US07116692B2 Semiconductor laser and method of producing the same 有权
公开(公告)号：US07116692B2
公开(公告)日：2006-10-03
申请号：US10315191
申请日：2002-12-10
申请人： Takashi Kimura , Hisayoshi Kitajima
发明人： Takashi Kimura , Hisayoshi Kitajima
IPC分类号： H01S5/00
CPC分类号： H01S5/16 , H01S5/168 , H01S5/2231 , H01S5/32316
摘要： A semiconductor laser device having a lower cladding layer, an active layer and an upper first cladding layer stacked on a compound semiconductor substrate in this order, a ridge-shaped upper second cladding layer provided on the upper first cladding layer, a current blocking layer provided on both sides of the upper second cladding layer, and a contact layer provided on the upper second cladding layer. A current interrupting layer or layers formed of an insulating material are provided between the upper second cladding layer and the contact layer, in the vicinity of at least one of a laser emission end face and a reflective end face, which are both end faces of the device in the longitudinal direction of the upper second cladding layer.

6. 发明授权

US07049641B2 Use of deep-level transitions in semiconductor devices 失效
标题翻译：在半导体器件中使用深层次的过渡
公开(公告)号：US07049641B2
公开(公告)日：2006-05-23
申请号：US10654790
申请日：2003-09-04
申请人： Janet L. Pan
发明人： Janet L. Pan
IPC分类号： H01L31/072
CPC分类号： H01S5/0422 , H01L33/06 , H01S5/0421 , H01S5/30 , H01S5/3068 , H01S5/3086 , H01S5/32316
摘要： The invention relates to the design, fabrication, and use of semiconductor devices that employ deep-level transitions (i.e., deep-level-to-conduction-band, deep-level-to-valence-band, or deep-level-to-deep-level) to achieve useful results. A principal aspect of the invention involves devices in which electrical transport occurs through a band of deep-level states and just the conduction band (or through a deep-level band and just the valence band), but where significant current does not flow through all three bands. This means that the deep-state is not acting as a nonradiative trap, but rather as an energy band through which transport takes place. Advantageously, the deep-level energy-band may facilitate a radiative transition, acting as either the upper or lower state of an optical transition.
摘要翻译：本发明涉及采用深层次转换的半导体器件的设计，制造和使用（即，深层次导通带，深层次到价带，或深层次导频，深层次）达成有用的效果。本发明的主要方面涉及其中电传输通过深层次状态的带和只有导带（或通过深层频带和仅仅价带）进行电传输的装置，但是当显着电流不流过所有三个乐队。这意味着深层国家不是作为一个非辐射的陷阱，而是作为运输发生的能带。有利地，深层级能带可以促进作为光学转变的上或下状态的辐射转变。

7. 发明授权

US07016386B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07016386B2
公开(公告)日：2006-03-21
申请号：US10446184
申请日：2003-05-28
申请人： Tomoyuki Kitamura
发明人： Tomoyuki Kitamura
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/2036 , H01S5/209 , H01S5/32316 , H01S2301/185 , H01S2301/206
摘要： A broad area semiconductor laser device is provided having an NFP with top hat shaped profiles for the P wave and the S wave, which result from polarized beam splitting of the emitted light. The broad area semiconductor laser device of the present invention has the same structure as the broad area semiconductor laser device of the prior art, except that the composition of an etch stop layer is different. The semiconductor laser device includes an n-Al0.5Ga0.5As first clad layer, an active layer including an AlGaAs optical guide layer and an AlGaAs quantum well layer, a 0.3 μm thick p-Al0.5G0.5As lower second clad layer, an Al0.7Ga0.3As etch stop layer, a p-Al0.5Ga0.5As upper second clad layer, and a p-GaAs contact layer, which form a laminated structure on top of an n-GaAs substrate.
摘要翻译：提供了一种广泛的半导体激光器件，其具有NFP，其具有用于P波和S波的顶帽形轮廓，其由所发射的光的偏振束分裂产生。除了蚀刻停止层的组成不同之外，本发明的广域半导体激光器件具有与现有技术的广域半导体激光器件相同的结构。半导体激光器件包括n-Al 0.5 Ga 0.5 N As第一包层，包括AlGaAs光导层和AlGaAs量子阱层的有源层，0.3μm 厚的p-Al 0.5G 0.5作为较低的第二包层，可以使用Al 0.7 Ga 0.3 As蚀刻停止层，作为上部第二包覆层的p-Al 0.5 Ga 0.5 N和在n-GaAs衬底的顶部上形成层叠结构的p-GaAs接触层。

8. 发明申请

US20050056864A1 Use of deep-level transitions in semiconductor devices 失效
标题翻译：在半导体器件中使用深层次的过渡
公开(公告)号：US20050056864A1
公开(公告)日：2005-03-17
申请号：US10654790
申请日：2003-09-04
申请人： Janet Pan
发明人： Janet Pan
IPC分类号： H01L27/10 , H01L33/06 , H01S5/042 , H01S5/30 , H01S5/323
CPC分类号： H01S5/0422 , H01L33/06 , H01S5/0421 , H01S5/30 , H01S5/3068 , H01S5/3086 , H01S5/32316
摘要： The invention relates to the design, fabrication, and use of semiconductor devices that employ deep-level transitions (i.e., deep-level-to-conduction-band, deep-level-to-valence-band, or deep-level-to-deep-level) to achieve useful results. A principal aspect of the invention involves devices in which electrical transport occurs through a band of deep-level states and just the conduction band (or through a deep-level band and just the valence band), but where significant current does not flow through all three bands. This means that the deep-state is not acting as a nonradiative trap, but rather as an energy band through which transport takes place. Advantageously, the deep-level energy-band may facilitate a radiative transition, acting as either the upper or lower state of an optical transition.
摘要翻译：本发明涉及采用深层次转换的半导体器件的设计，制造和使用（即，深层次导通带，深层次到价带，或深层次导频，深层次）达成有用的效果。本发明的主要方面涉及其中电传输通过深层次状态的带和只有导带（或通过深层频带和仅仅价带）进行电传输的装置，但是当显着电流不流过所有三个乐队。这意味着深层国家不是作为一个非辐射的陷阱，而是作为运输发生的能带。有利地，深层级能带可以促进作为光学转变的上或下状态的辐射转变。

9. 发明申请

US20020167982A1 High power semiconductor laser diode 有权
标题翻译：大功率半导体激光二极管
公开(公告)号：US20020167982A1
公开(公告)日：2002-11-14
申请号：US09852994
申请日：2001-05-10
发明人： Berthold N. Schmidt , Susanne Pawlik , Achim Thies , Christoph Harder
IPC分类号： H01S005/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/168 , H01S5/2216 , H01S5/32316
摘要： Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two nullunpumped end sectionsnull of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6).
摘要翻译：半导体激光二极管，特别是大功率AlGaAs基脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中的光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进的设计，特别地显着地最小化或避免了这种激光（前端）部分退化的改进二极管，并且与现有技术设计相比显着提高了长期稳定性。这是通过建立激光二极管的一个或两个“未使用的端部”来实现的。在激光刻面（10,12）中的一个上提供这种未卷边端部的一种优选方式是将预定位置，尺寸和形状的隔离层（11,13）插入激光二极管的半导体材料和通常存在的金属化（6）。

10. 发明授权

US5852625A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US5852625A
公开(公告)日：1998-12-22
申请号：US621748
申请日：1996-03-22
申请人： Koji Takahashi
发明人： Koji Takahashi
IPC分类号： H01S5/00 , H01S5/12 , H01S5/323 , H01S3/08 , H01S3/19
CPC分类号： H01S5/1228 , H01S5/32316 , H01S5/32333
摘要： The gain coupled distributed feedback semiconductor laser includes an active layer and a diffraction grating which is provided in the vicinity of the active layer and has a plurality of light absorption layer periodically arranged along a resonator length direction. A relationship among energy h.nu. (h is Planck's constant, and .nu. is a frequency of induced emission light), forbidden band width E.sub.g of the light absorption layer, and energy band width .delta.E where free electrons are thermally distributed satisfies h.nu..gtoreq.E.sub.g +.delta.E.
摘要翻译：增益耦合分布反馈半导体激光器包括有源层和衍射光栅，该衍射光栅设置在有源层附近并具有沿着谐振器长度方向周期性排列的多个光吸收层。能量h nu（h是普朗克常数，nu是感应发射光的频率），光吸收层的禁带宽度Eg和热分布自由电子的能带宽度ΔE之间的关系满足hnu> = Eg + delta E.

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