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    • 6. 发明授权
    • Achromatized beam splitter of low polarization
    • 低极化的消色差分束器
    • US4415233A
    • 1983-11-15
    • US339659
    • 1982-01-15
    • Susumu ItohMitsuharu Sawamura
    • Susumu ItohMitsuharu Sawamura
    • G02B5/04G02B27/10G02B5/28
    • G02B27/142G02B27/144
    • An achromatized beam splitter of a low polarization comprising a transparent first prism, a transparent second prism and a thin film group provided between the first prism and the second prism. The thin film group comprises, in succession from the first prism to the second prism, a first dielectric material thin film layer provided on the inclined surface of the first prism which first layer is a mixture of titanium oxide and zirconium oxide, a metal thin film layer provided on the first dielectric material thin film layer which metal layer consists of silver, and a second dielectric material thin film layer provided on the metal thin film layer which second layer is a mixture of titanium oxide and zirconium oxide. The second dielectric material thin film layer has a film thickness substantially equal to that of the first dielectric material thin film layer.
    • 一种低偏振度的消色差分束器,包括透明第一棱镜,透明第二棱镜和设置在第一棱镜和第二棱镜之间的薄膜组。 薄膜组从第一棱镜到第二棱镜连续地包括设置在第一棱镜的倾斜表面上的第一介电材料薄膜层,第一层是氧化钛和氧化锆的混合物,金属薄膜 设置在该金属层由银组成的第一介电材料薄膜层上的第二介电材料薄膜层和设置在金属薄膜层上的第二介电材料薄膜层,该第二层是氧化钛和氧化锆的混合物。 第二介质材料薄膜层的膜厚基本上等于第一介电材料薄膜层的膜厚度。
    • 9. 发明申请
    • Method of forming film by sputtering, optical member, and sputtering apparatus
    • 通过溅射形成膜的方法,光学部件和溅射装置
    • US20050016834A1
    • 2005-01-27
    • US10917360
    • 2004-08-13
    • Mitsuharu Sawamura
    • Mitsuharu Sawamura
    • G02B1/11C23C14/04C23C14/06C23C14/34C23C14/56G02B1/115C23C14/32
    • C23C14/568C23C14/044C23C14/3407
    • A minute multilayer film with good characteristics is automatically and continuously formed on an in-line basis at a low production cost. In a sputtering chamber, there is provided a bonded target in which a first Ti member, a first Si member, a second Ti member, a Ta member, and a second Si member are bonded and which acts as a cathode electrode. A power is supplied between a substrate and the bonded target, and a substrate and a substrate holder are moved. With the movement, the substrate successively comes to face the first Ti member, first Si member, second Ti member, Ta member, and second Si member of the bonded target and sputtering is carried out on the substrate. A multilayer thin film of a structure consisting of a TiO2 film, an SiO2 film, a TiO2 film, a Ta2O5 film, and an SiO2 film is formed on a surface of the substrate. The thickness of each layer is adjusted by a film thickness correcting plate interposed between the substrate and the bonded target.
    • 具有良好特性的微小的多层膜以低成本自动连续地在线地形成。 在溅射室中,设置有接合了第一Ti构件,第一Si构件,第二Ti构件,Ta构件和第二Si构件并且用作阴极电极的键合对象。 在基板和接合的靶之间提供电力,并移动基板和基板保持器。 通过运动,基板依次面对接合靶的第一Ti构件,第一Si构件,第二Ti构件,Ta构件和第二Si构件,并且在基板上进行溅射。 在基板的表面上形成由TiO 2膜,SiO 2膜,TiO 2膜,Ta 2 O 5膜和SiO 2膜构成的结构的多层薄膜。 通过插入在基板和粘结对象物之间的膜厚校正板来调整各层的厚度。