会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明申请
    • Optical information recording medium and method of manufacturing the same
    • 光信息记录介质及其制造方法
    • US20050196575A1
    • 2005-09-08
    • US11071725
    • 2005-03-03
    • Eiji Kariyada
    • Eiji Kariyada
    • G11B7/254G11B7/243G11B7/257G11B7/26B32B3/02
    • G11B7/257G11B7/243G11B2007/24312G11B2007/24314G11B2007/24316G11B2007/25706G11B2007/25708G11B2007/25711Y10T428/21
    • An optical information recording medium includes an oxide/nitride dielectric film that shows a film forming rate higher than that of SiON film and hence is adapted to mass production. The recording medium shows little change in the reflectivity after a long environment test. A first dielectric layer made of ZnS—SiO2, an oxide/nitride dielectric layer made of silicon-nickel oxide/nitride, a second dielectric layer made of ZnS—SiO2, a first interface layer made of GeN, a recording layer made of Ge2Sb2Te5, a second interface layer made of GeN, a third dielectric layer made of ZnS—SiO2 and a reflection layer are laid sequentially on a transparent substrate in the above mentioned order. The oxide/nitride dielectric layer is formed by reactive sputtering in a mixed gas atmosphere containing Ar gas, O2 gas and N2 gas. The refractive index of the oxide/nitride dielectric layer is made lower than that of the first dielectric layer and that of the second dielectric layer and the light absorption coefficient of the recording layer is made lower in an amorphous state than in a crystalline state.
    • 光学信息记录介质包括氧化物/氮化物电介质膜,该氧化物/氮化物电介质膜的成膜速率高于SiON膜,因此适合批量生产。 在长时间的环境试验后,记录介质的反射率几乎没有变化。 由ZnS-SiO 2构成的第一电介质层,由硅 - 氧化镍/氮化物制成的氧化物/氮化物电介质层,由ZnS-SiO 2 ,由GeN制成的第一界面层,由Ge 2 Sb 2 Te 5制成的记录层,由GeN制成的第二界面层, 按照上述顺序将由ZnS-SiO 2 N制成的第三电介质层和反射层依次放置在透明基板上。 氧化物/氮化物电介质层通过反应性溅射在含有Ar气体,O 2气体和N 2气体的混合气体气氛中形成。 使得氧化物/氮化物电介质层的折射率低于第一电介质层的折射率,第二介电层的折射率和记录层的光吸收系数在非晶状态下比在结晶状态下低。