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1. 发明授权

US08571366B2 Proximity free space optical interconnect 有权
标题翻译：接近自由空间光互连
公开(公告)号：US08571366B2
公开(公告)日：2013-10-29
申请号：US12991644
申请日：2008-05-09
申请人： Michael R. T. Tan , Paul K. Rosenberg , Sagi V. Mathai , Moray McLaren , Shih-Yuan Wang
发明人： Michael R. T. Tan , Paul K. Rosenberg , Sagi V. Mathai , Moray McLaren , Shih-Yuan Wang
IPC分类号： G02B6/26 , G02B6/42
CPC分类号： G02B6/4292 , G02B6/325 , G02B6/3886 , G02B6/3893 , G02B6/43
摘要： A system employs a flexible optical media, two connectors, and a mechanism such as a magnet that brings the connector together when the connectors are close to each other. The optical media is able to guide optical signals, and one connector is attached to an end of the optical media. Each connector also has alignment features and provides paths for the optical signals. The alignment features of each connector are shaped to mate with the alignment features of the other connector and to shift the connectors relative to each other as the mechanism pushes the connector together. The alignment features further have seated positions at which the paths in one connector are aligned with the paths in the other connector and separated by a free space gap.
摘要翻译：系统采用柔性光学介质，两个连接器以及当连接器彼此靠近时将连接器连接在一起的诸如磁体的机构。光学介质能够引导光学信号，并且一个连接器附接到光学介质的端部。每个连接器还具有对准特征并提供光信号的路径。每个连接器的对准特征被成形为与另一个连接器的对准特征配合，并且当该机构将连接器推动到一起时，使连接器相对于彼此移动。对准特征还具有就座位置，一个连接器中的路径与另一个连接器中的路径对准，并且由自由空间间隔分开。

2. 发明授权

US5892787A N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same 失效
标题翻译：在n型衬底上制造的N驱动p普通发光器件及其制造方法
公开(公告)号：US5892787A
公开(公告)日：1999-04-06
申请号：US635838
申请日：1996-04-22
申请人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang , Ghulam Hasnain , Yu-Min Houng
发明人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang , Ghulam Hasnain , Yu-Min Houng
IPC分类号： H01S5/00 , H01L33/00 , H01L33/30 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/42 , H01S3/19
CPC分类号： H01L33/30 , H01L33/0016 , H01L33/0062 , H01S5/18308 , H01S5/0207 , H01S5/0421 , H01S5/18305 , H01S5/2059 , H01S5/2063 , H01S5/3054 , H01S5/3095 , H01S5/423
摘要： A substantially n-type substrate structure having a p-type surface for use in semiconductor devices as a substitute for a p-type semiconductor substrate. The substrate structure comprises a substrate region and a buffer region. The substrate region is a region of n-type compound semiconductor, and includes a degeneratively n-doped portion adjacent its first surface. The buffer region is a region of compound semiconductor doped with a p-type dopant. The buffer region is located on the first surface of the substrate region and includes a surface remote from the substrate region that provides the p-type surface of the substrate structure. The buffer region also includes a degeneratively p-doped portion adjacent the degeneratively n-doped portion of the substrate region. The substrate structure includes a tunnel junction between the degeneratively n-doped portion of the substrate region and the degeneratively p-doped portion of the buffer region. The substrate structure is made by degeneratively doping a substrate region of n-type compound semiconductor material adjacent its first surface with an n-type impurity, and depositing a layer of compound semiconductor material doped with a p-type impurity on the first surface of the substrate region to form a buffer region that includes a surface remote from the substrate region. In the course of depositing the compound semiconductor material to form the buffer region, the compound semiconductor material is degeneratively doped with the p-type impurity at least in a portion adjacent the substrate region to form a tunnel junction between the substrate region and the buffer region.
摘要翻译：具有用于半导体器件的p型表面作为p型半导体衬底的替代物的基本为n型衬底结构。衬底结构包括衬底区域和缓冲区域。衬底区域是n型化合物半导体的区域，并且包括与其第一表面相邻的退化的n-掺杂部分。缓冲区是掺杂有p型掺杂剂的化合物半导体的区域。缓冲区域位于衬底区域的第一表面上并且包括远离衬底区域的表面，该表面提供衬底结构的p型表面。缓冲区还包括与衬底区域的退化的n掺杂部分相邻的退化的p掺杂部分。衬底结构包括在衬底区域的退化的n掺杂部分和缓冲区域的退化的p掺杂部分之间的隧道结。衬底结构是通过用n型杂质将邻近其第一表面的n型化合物半导体材料的衬底区域简单地掺杂制成的，并且在第一表面上沉积掺杂有p型杂质的化合物半导体材料层衬底区域以形成包括远离衬底区域的表面的缓冲区域。在沉积化合物半导体材料以形成缓冲区的过程中，化合物半导体材料至少在与衬底区域相邻的部分中被p型杂质退变掺杂以在衬底区域和缓冲区域之间形成隧道结。

3. 发明授权

US5266503A Method of making a surface emitting laser with oxygen ion implants followed by epitaxial regrowth 失效
标题翻译：用氧离子注入制造表面发射激光，然后进行外延再生的方法
公开(公告)号：US5266503A
公开(公告)日：1993-11-30
申请号：US771069
申请日：1991-10-02
申请人： Shih-Yuan Wang , Michael R. T. Tan
发明人： Shih-Yuan Wang , Michael R. T. Tan
IPC分类号： H01L21/76 , H01L33/00 , H01S5/183 , H01S5/20 , H01S5/223 , H01S5/24 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/7605 , H01L33/0062 , H01S5/0207 , H01S5/18308 , H01S5/18305 , H01S5/2063 , H01S5/2234 , H01S5/24 , H01S5/3432 , Y10S148/095
摘要： A surface emitting laser diode device is disclosed where an active layer is implanted with oxygen ions except for a small active region. The active region includes a pn junction for generating radiation in response to passage of electrical current therethrough. After the oxygen implantation, mirror layers are grown on top of the active layer to reflect light generated in the active region back into the active region to induce more radiation emission. Mirror layers are also provided underneath the active region for the same purpose. Contact layers are provided on the top and bottom of the structure just described so that when an electrical potential is applied between the two contacts, electrical current will flow between the contacts between the active region for generating radiation. The oxygen-implanted isolation region surrounds the active region in order to confine current flow to the active region.
摘要翻译：公开了一种表面发射激光二极管器件，其中除了小的有源区域之外，用氧离子注入有源层。有源区包括用于响应电流通过其中的辐射而产生辐射的pn结。在氧注入之后，镜层生长在有源层的顶部上，以将在有源区中产生的光反射回有源区，以引起更多的辐射发射。为了相同的目的，镜面层也设置在活动区域的下方。接触层设置在刚刚描述的结构的顶部和底部，使得当在两个触点之间施加电势时，电流将在用于产生辐射的有源区域之间的触点之间流动。氧注入的隔离区围绕有源区域，以限制电流流向有源区。

4. 发明授权

US09263637B2 Plasmonic light emitting diode 有权
标题翻译：等离子体发光二极管
公开(公告)号：US09263637B2
公开(公告)日：2016-02-16
申请号：US13145995
申请日：2009-01-30
申请人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
发明人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
IPC分类号： H01L33/00 , H01L33/20 , H01L33/02 , H01L33/04 , H01L33/38
CPC分类号： H01L33/06 , H01L33/0062 , H01L33/02 , H01L33/04 , H01L33/20 , H01L33/30 , H01L33/387 , H01L33/40 , H01L2933/0016
摘要： A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.
摘要翻译：发光二极管（100或150）包括在增强层（142）和量子阱（120）之间包含量子阱（120），增强层（142）和阻挡层（144或148）的二极管结构）。增强层（142）以耦合到量子阱（120）中的电子和空穴的组合产生的光子的频率来支持等离子体振荡。阻挡层用于阻止增强层（142）和二极管结构之间的扩散。

5. 发明授权

US5892784A N-drive p-common surface emitting laser fabricated on n+ substrate 失效
标题翻译：在n +衬底上制造的N驱动p共面发射激光器
公开(公告)号：US5892784A
公开(公告)日：1999-04-06
申请号：US330033
申请日：1994-10-27
申请人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang
发明人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang
IPC分类号： H01S5/00 , H01L33/00 , H01L33/30 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/42 , H01S3/19
CPC分类号： H01L33/30 , H01L33/0016 , H01L33/0062 , H01S5/18308 , H01S5/0207 , H01S5/0421 , H01S5/18305 , H01S5/2063 , H01S5/3054 , H01S5/3095 , H01S5/423
摘要： The present invention provides a n-drive surface emitting laser comprised of an active region, a first mirror region having a first conductivity type, a second mirror region having a second opposite conductivity type, the first and second mirror regions being located on opposite sides of the light generation region, a buffer region having a second conductivity type, and a substrate having a first conductivity type. In the preferred embodiment the first conductivity type is n-type, thus the present invention provides a method of forming an n-drive semiconductor laser on an n-type substrate. Contact is made to the p-type mirror region via a tunnel junction formed by degeneratively doping the areas of the substrate region and the buffer region which abut each other. The tunnel junction is reverse biased so that current is injected through the degeneratively doped p-n junction formed by the n+ substrate and the p-type conducting layer.
摘要翻译：本发明提供一种n驱动面发射激光器，其包括有源区，具有第一导电类型的第一镜区，具有第二相反导电类型的第二镜区，第一和第二镜区位于光产生区域，具有第二导电类型的缓冲区域和具有第一导电类型的衬底。在优选实施例中，第一导电类型是n型，因此本发明提供了在n型衬底上形成n驱动半导体激光器的方法。通过将衬底区域和相邻的缓冲区的区域进行退化掺杂形成的隧道结对p型反射镜区域进行接触。隧道结被反向偏置，使得电流通过由n +衬底和p型导电层形成的退化掺杂的p-n结注入。

6. 发明授权

US5045498A Method of fabricating an atomic element doped semiconductor injection laser using ion implantation and epitaxial growth on the implanted surface 失效
标题翻译：在注入表面上使用离子注入和外延生长制造原子元素掺杂半导体注入激光器的方法
公开(公告)号：US5045498A
公开(公告)日：1991-09-03
申请号：US565532
申请日：1990-08-10
申请人： Shih-Yuan Wang , Michael R. T. Tan
发明人： Shih-Yuan Wang , Michael R. T. Tan
IPC分类号： H01S5/00 , H01S5/30
CPC分类号： H01S5/305 , H01S5/3068 , Y10S148/095
摘要： A semiconductor laser diode includes a first buffer layer, a second buffer layer and an active layer sandwiched between the two buffer layers. The active layer contains dopant ions where the dopant ions are such that energy transfer between the unimplanted material in the active layer and the dopant ions implanted causes lasing action substantially at a single frequency characteristic of the dopant ions. The two buffer layers confine light emitted by the active layer. The second buffer layer is grown epitaxially on the active layer. In the preferred embodiment, the structure is made by first growing a thin second buffer layer epitaxially on the active layer. The dopant ions are then implanted into the active layer through the thin second buffer layer. The structure is heated to a high temperature to anneal the structure and to activate the dopants. The second buffer layer is then further grown to make it thicker so as to be more effective in confining the light emission in the active layer.

7. 发明授权

US06252896B1 Long-Wavelength VCSEL using buried bragg reflectors 有权
标题翻译：长波长VCSEL使用埋地布拉格反射器
公开(公告)号：US06252896B1
公开(公告)日：2001-06-26
申请号：US09263696
申请日：1999-03-05
申请人： Michael R. T. Tan , Dubravko I. Babic , Scott W. Corzine , Tirmula R. Ranganath , Shih-Yuan Wang , Wayne Bi
发明人： Michael R. T. Tan , Dubravko I. Babic , Scott W. Corzine , Tirmula R. Ranganath , Shih-Yuan Wang , Wayne Bi
IPC分类号： H01S500
CPC分类号： H01S5/426 , H01S5/0215 , H01S5/0216 , H01S5/041 , H01S5/18311 , H01S5/18369
摘要： An optically pumped vertical-cavity surface-emitting laser (VCSEL) device and a method of fabricating the device utilize two separate substrates that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light to drive the device to emit output laser light having a long peak wavelength. The optically pumped VCSEL device includes a short-wavelength VCSEL formed on one of the two substrates and a long-wavelength VCSEL formed on the other substrate. The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.
摘要翻译：光泵浦垂直腔表面发射激光器（VCSEL）器件和制造该器件的方法利用执行滤波操作的两个分离的衬底，以仅选择性地仅透射由器件产生的具有长峰值波长的光。光泵浦VCSEL器件是自泵浦器件，其可以产生泵浦光以驱动器件发射具有长峰值波长的输出激光。光泵浦VCSEL器件包括形成在两个衬底中的一个上的短波长VCSEL和在另一衬底上形成的长波长VCSEL。短波长VCSEL是产生短波长光以驱动（即光泵浦）长波长VCSEL的电流驱动VCSEL。短波长VCSEL和长波长VCSEL被结合在一起，使得两个基板被两个VCSEL隔开。可以使用透明光学粘合剂材料或金属粘合材料将短波长VCSEL粘合到长波长VCSEL上。衬底相对于传播光是波长选择性的，使得由短波长VCSEL产生并且不被长波长VCSEL吸收的短波长光主要被两个分离的衬底吸收。然而，由长波长VCSEL产生的长波长光被允许通过基板作为输出激光传输。

8. 发明授权

US5838708A Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser 失效
公开(公告)号：US5838708A
公开(公告)日：1998-11-17
申请号：US509886
申请日：1995-08-01
申请人： Hong Lin , Long Yang , Michael R. T. Tan , Shih-Yuan Wang
发明人： Hong Lin , Long Yang , Michael R. T. Tan , Shih-Yuan Wang
IPC分类号： H01S5/026 , H01S5/183 , H01S5/20 , H01S3/18
CPC分类号： H01S5/0264 , H01S5/0207 , H01S5/18305 , H01S5/18308 , H01S5/2027 , H01S5/2063
摘要： The present invention provides a structure and method for integrating a photodiode and surface emitting laser on a substrate which minimizes both process complexity and exposure of epitaxial layers. In a first embodiment, a photodiode structure is integrated with the surface emitting laser simply by adding a separate Schottky contact to the surface of the SEL. In a second embodiment, a photodiode structure is integrated with the surface emitting laser by positioning a current isolation region between the photodiode and the SEL. The current isolation region should extend into a first mirror region but not into the light generation region of the active region so that the light generation region of the SEL is optically coupled to the light absorption region of the photodiode.

9. 发明授权

US5491712A Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser 失效
标题翻译：集成表面发射激光器和光电二极管，用于监测表面发射激光器的功率输出
公开(公告)号：US5491712A
公开(公告)日：1996-02-13
申请号：US332231
申请日：1994-10-31
申请人： Hong Lin , Long Yang , Michael R. T. Tan , Shih-Yuan Wang
发明人： Hong Lin , Long Yang , Michael R. T. Tan , Shih-Yuan Wang
IPC分类号： H01S5/026 , H01S5/183 , H01S5/20 , H01S3/18
CPC分类号： H01S5/0264 , H01S5/0207 , H01S5/18305 , H01S5/18308 , H01S5/2027 , H01S5/2063
摘要： The present invention provides a structure and method for integrating a photodiode and surface emitting laser on a substrate which minimizes both process complexity and exposure of epitaxial layers. In a first embodiment, a photodiode structure is integrated with the surface emitting laser simply by adding a separate Schottky contact to the surface of the SEL. In a second embodiment, a photodiode structure is integrated with the surface emitting laser by positioning a current isolation region between the photodiode and the SEL. The current isolation region should extend into a first mirror region but not into the light generation region of the active region so that the light generation region of the SEL is optically coupled to the light absorption region of the photodiode.
摘要翻译：本发明提供了一种用于将光电二极管和表面发射激光器集成在衬底上的结构和方法，其使工艺复杂性和外延层的曝光都最小化。在第一实施例中，光电二极管结构仅通过向SEL的表面添加单独的肖特基接触而与表面发射激光器集成。在第二实施例中，通过将光电二极管和SEL之间的电流隔离区域定位，光电二极管结构与表面发射激光器集成。电流隔离区域应延伸到第一反射镜区域而不延伸到有源区域的光产生区域中，使得SEL的光产生区域光耦合到光电二极管的光吸收区域。

10. 发明授权

US08472018B2 Grating for multiple discrete wavelengths of Raman scattering 有权
标题翻译：用于多个离散波长的拉曼散射的光栅
公开(公告)号：US08472018B2
公开(公告)日：2013-06-25
申请号：US12847982
申请日：2010-07-30
申请人： Michael J. Stuke , Michael R. T. Tan , Alexandre M. Bratkovski , Min Hu , Huei Pei Kuo , Jingjing Li , Zhiyong Li , Fung Suong Ou , Shih-Yuan Wang , Wei Wu
发明人： Michael J. Stuke , Michael R. T. Tan , Alexandre M. Bratkovski , Min Hu , Huei Pei Kuo , Jingjing Li , Zhiyong Li , Fung Suong Ou , Shih-Yuan Wang , Wei Wu
IPC分类号： G01J3/44
CPC分类号： G01N21/65 , G01N21/658
摘要： Systems and methods employ a layer having a pattern that provides multiple discrete guided mode resonances for respective couplings of separated wavelengths into the layer. Further, a structure including features shaped to enhance Raman scattering to produce light of the resonant wavelengths can be employed with the patterned layer.
摘要翻译：系统和方法采用具有图案的层，该图案为分离的波长的各个耦合提供到层中提供多个离散的引导模式谐振。此外，可以使用包括成形为增强拉曼散射以产生谐振波长的光的特征的结构与图案化层。

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