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1. 发明申请

US20170012083A1 RESISTIVE RANDOM-ACCESS MEMORY WITH IMPLANTED AND RADIATED CHANNELS 审中-公开
标题翻译：具有嵌入式和放大通道的电阻随机存取存储器
公开(公告)号：US20170012083A1
公开(公告)日：2017-01-12
申请号：US15010450
申请日：2016-01-29
申请人： Shih-Yuan WANG , Shih-Ping WANG
发明人： Shih-Yuan WANG , Shih-Ping WANG
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L27/2409 , H01L27/2481 , H01L27/249 , H01L45/06 , H01L45/08 , H01L45/1226 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/146 , H01L45/1608 , H01L45/1633 , H01L45/165
摘要： Resistive RAM (RRAM) devices having increased uniformity and related manufacturing methods are described. Greater uniformity of performance across an entire chip that includes larger numbers of RRAM cells can be achieved by uniformly creating enhanced channels in the switching layers through the use of radiation damage. The radiation, according to various described embodiments, can be in the form of ions, electromagnetic photons, neutral particles, electrons, and ultrasound.
摘要翻译：描述具有增加的均匀性和相关制造方法的电阻RAM（RRAM）装置。通过使用辐射损伤在开关层中均匀地产生增强的通道，可以实现包括更大数量的RRAM单元的整个芯片的更高的性能均匀性。根据各种描述的实施例，辐射可以是离子，电磁光子，中性粒子，电子和超声波的形式。

2. 发明授权

US09323217B2 Metamaterial and dynamically reconfigurable hologram employing same 有权
标题翻译：超材料和使用相同的动态可重构全息图
公开(公告)号：US09323217B2
公开(公告)日：2016-04-26
申请号：US13142484
申请日：2008-12-29
申请人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
发明人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
IPC分类号： G03H1/08 , G03H1/02 , G03H1/22 , G02B1/00
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.
摘要翻译：负指数材料（或超材料）横杆包括大致平行的纳米线的第一层和覆盖第一层中的纳米线的大致平行的纳米线的第二层。第一层中的纳米线在第二层中与纳米线的取向近似垂直。第一层的每个纳米线和第二层的每个纳米线具有基本上规则间隔的指状物。横杆还包括在各层之间的纳米线交叉处的共振元件。每个谐振元件包括第一层中的纳米线的两个指状物和第二层中的纳米线的两个指状物。

3. 发明授权

US09272900B2 Nanostructures and methods of making the same 有权
标题翻译：纳米结构和制作方法
公开(公告)号：US09272900B2
公开(公告)日：2016-03-01
申请号：US12864205
申请日：2008-01-30
申请人： Shih-Yuan Wang , Michael Renne Ty Tan
发明人： Shih-Yuan Wang , Michael Renne Ty Tan
IPC分类号： H01L29/06 , B81C1/00 , B82Y10/00 , H01L31/0352 , H01L31/105
CPC分类号： B81C1/00142 , B81C2201/0171 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L31/035281 , H01L31/105 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A nanostructure includes a highly conductive microcrystalline layer, a bipolar nanowire, and another layer (18, 30). The highly conductive microcrystalline layer includes a microcrystalline material and a metal. The bipolar nanowire has one end attached to the highly conductive microcrystalline layer and another end attached to the other layer.
摘要翻译：纳米结构包括高导电微晶层，双极纳米线和另一层（18,30）。高导电性微晶层包括微晶材料和金属。双极纳米线的一端连接到高导电微晶层，另一端连接到另一层。

4. 发明申请

US20150357566A1 RESISTIVE RANDOM-ACCESS MEMORY WITH IMPLANTED AND RADIATED CHANNELS 审中-公开
标题翻译：具有嵌入式和放大通道的电阻随机存取存储器
公开(公告)号：US20150357566A1
公开(公告)日：2015-12-10
申请号：US14829327
申请日：2015-08-18
申请人： Shih-Yuan WANG , Shih-Ping WANG
发明人： Shih-Yuan WANG , Shih-Ping WANG
IPC分类号： H01L45/00
CPC分类号： H01L27/2409 , H01L27/2481 , H01L27/249 , H01L45/06 , H01L45/08 , H01L45/1226 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/146 , H01L45/1608 , H01L45/1633 , H01L45/165
摘要： Resistive RAM (RRAM) devices having increased uniformity and related manufacturing methods are described. Greater uniformity of performance across an entire chip that includes larger numbers of RRAM cells can be achieved by uniformly creating enhanced channels in the switching layers through the use of radiation damage. The radiation, according to various described embodiments, can be in the form of ions, electromagnetic photons, neutral particles, electrons, and ultrasound.
摘要翻译：描述具有增加的均匀性和相关制造方法的电阻RAM（RRAM）装置。通过使用辐射损伤在开关层中均匀地产生增强的通道，可以实现包括更大数量的RRAM单元的整个芯片的更高的性能均匀性。根据各种描述的实施例，辐射可以是离子，电磁光子，中性粒子，电子和超声波的形式。

5. 发明授权

US08665432B2 Apparatus for performing SERS 有权
标题翻译：用于执行SERS的装置
公开(公告)号：US08665432B2
公开(公告)日：2014-03-04
申请号：US12915148
申请日：2010-10-29
申请人： Min Hu , Michael Josef Stuke , Zhiyong Li , Wei Wu , Fung Suong Ou , Shih-Yuan Wang , Lars Helge Thylen
发明人： Min Hu , Michael Josef Stuke , Zhiyong Li , Wei Wu , Fung Suong Ou , Shih-Yuan Wang , Lars Helge Thylen
IPC分类号： G01N21/65
CPC分类号： G01J3/44 , G01N21/658
摘要： An apparatus for performing surface enhanced Raman spectroscopy (SERS) includes a substrate and a plurality of nano-pillars, each of the plurality of nano-pillars having a first end attached to the substrate, a second end located distally from the substrate, and a body portion extending between the first end and the second end, in which the plurality of nano-pillars are arranged in an array on the substrate, and in which each of the plurality of nano-pillars is formed of a polymer material that is functionalized to expand in the presence of a fluid to cause gaps between the plurality of nano-pillars to shrink when the fluid is supplied onto the nano-pillars.
摘要翻译：用于进行表面增强拉曼光谱（SERS）的设备包括基底和多个纳米柱，多个纳米柱中的每一个具有连接到基底的第一端，位于远离基底的第二端，以及主体部分在所述第一端和所述第二端之间延伸，其中所述多个纳米柱以阵列布置在所述基底上，并且所述多个纳米柱中的每一个由聚合物材料形成，所述聚合物材料被官能化为在存在流体的情况下膨胀，以便当将流体供应到纳米支柱上时，使多个纳米柱之间的间隙收缩。

6. 发明申请

US20140036262A1 ELECTRONIC AND PLASMONIC ENHANCEMENT FOR SURFACE ENHANCED RAMAN SPECTROSCOPY 审中-公开
标题翻译：表面增强拉曼光谱的电子和等离子体增强
公开(公告)号：US20140036262A1
公开(公告)日：2014-02-06
申请号：US13562567
申请日：2012-07-31
申请人： Shih-Yuan Wang , Gary Gibson , Zhiyong Li , Alexandre M. Bratkovski , Huei Pei Kuo , Zhang-Lin Zhou , R Stanley Williams
发明人： Shih-Yuan Wang , Gary Gibson , Zhiyong Li , Alexandre M. Bratkovski , Huei Pei Kuo , Zhang-Lin Zhou , R Stanley Williams
IPC分类号： G01J3/44
CPC分类号： G01N21/658
摘要： An apparatus for surface enhanced Raman spectroscopy includes a substrate, a nanostructure and a plasmonic material. The nanostructure and the plasmonic material are integrated together to provide electronic and plasmonic enhancement to a Raman signal produced by electromagnetic radiation scattering from an analyte.
摘要翻译：用于表面增强拉曼光谱的装置包括底物，纳米结构和等离子体激元材料。将纳米结构和等离子体激元材料集成在一起，以对由分析物的电磁辐射散射产生的拉曼信号提供电子和等离子体增强。

7. 发明申请

US20140029002A1 ADJUSTABLE INTERSURFACE SPACING FOR SURFACE ENHANCED RAMAN SPECTROSCOPY 审中-公开
标题翻译：表面增强拉曼光谱的可调节的表面间距
公开(公告)号：US20140029002A1
公开(公告)日：2014-01-30
申请号：US13561561
申请日：2012-07-30
申请人： Shih-Yuan Wang , Zhiyong Li , Alexandre M. Bratkovski , Gary Gibson , Huei Pei Kuo , Zhang-Lin Zhou , Steven J. Barcelo , Ansoon Kim , R Stanley Williams
发明人： Shih-Yuan Wang , Zhiyong Li , Alexandre M. Bratkovski , Gary Gibson , Huei Pei Kuo , Zhang-Lin Zhou , Steven J. Barcelo , Ansoon Kim , R Stanley Williams
IPC分类号： G01J3/44
CPC分类号： G01N21/658 , B82Y15/00
摘要： A sensor for surface enhanced Raman spectroscopy (SERS) sensor includes surfaces and an actuator to adjust an intersurface spacing between the surfaces to contain an analyte and allow the analyte to be released from containment.
摘要翻译：用于表面增强拉曼光谱（SERS）传感器的传感器包括表面和致动器，以调节表面之间的表面间隔，以包含分析物并允许分析物从容纳物释放。

8. 发明授权

US08559003B2 Electrically driven devices for surface enhanced raman spectroscopy 有权
标题翻译：用于表面增强拉曼光谱的电驱动装置
公开(公告)号：US08559003B2
公开(公告)日：2013-10-15
申请号：US13384456
申请日：2009-09-17
申请人： Huei Pei Kuo , Shih-Yuan Wang , Min Hu , Zhiyong Li , Alexandre M. Bratkovski
发明人： Huei Pei Kuo , Shih-Yuan Wang , Min Hu , Zhiyong Li , Alexandre M. Bratkovski
IPC分类号： G01J3/44
CPC分类号： G01N21/658 , B82Y15/00 , B82Y30/00
摘要： An electrically driven device for surface enhanced Raman spectroscopy includes a first electrode, a substrate positioned proximate to the first electrode, a plurality of cone shaped protrusions formed integrally with or on a substrate surface, a Raman signal-enhancing material coated on each protrusion, and a second electrode positioned relative to the first electrode at a predetermined distance. Each of the protrusions has a tip with a radius of curvature ranging from about 0.1 nm to about 100 nm. The second electrode is positioned relative to the first electrode such that the electrodes together produce an electric field when a voltage bias is applied therebetween. The electric field has a field distribution that creates a stronger field gradient at a region proximate to the tips than at other portions of the substrate.
摘要翻译：用于表面增强拉曼光谱的电驱动装置包括第一电极，靠近第一电极定位的基板，与基底表面一体地形成的多个锥形突起，涂覆在每个突起上的拉曼信号增强材料，以及相对于第一电极以预定距离定位的第二电极。每个突起具有具有约0.1nm至约100nm范围的曲率半径的尖端。第二电极相对于第一电极定位，使得当在其之间施加电压偏置时，电极一起产生电场。电场具有场分布，其在靠近尖端的区域处产生比在衬底的其它部分更强的场梯度。

9. 发明授权

US08357926B2 Gain-clamped semiconductor optical amplifiers 有权
标题翻译：增益钳位半导体光放大器
公开(公告)号：US08357926B2
公开(公告)日：2013-01-22
申请号：US13486291
申请日：2012-06-01
申请人： Shih-Yuan Wang , M. Saif Islam , Philip J. Kuekes , Nobuhiko Kobayashi
发明人： Shih-Yuan Wang , M. Saif Islam , Philip J. Kuekes , Nobuhiko Kobayashi
IPC分类号： H01L29/06 , H01S5/20
CPC分类号： H01S5/341 , B82Y20/00 , H01L31/035281 , H01L31/09 , H01L31/1025 , H01S5/021 , H01S5/125 , H01S5/3412 , H01S5/4031 , H01S5/5018 , H01S5/5072 , H01S2301/14 , Y02E10/50 , Y10S977/762
摘要： A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.
摘要翻译：增益钳位半导体光放大器包括：至少一个第一表面; 至少一个第二表面，每个第二表面面对并与相应的第一表面电隔离; 多个纳米线以桥接形式连接每个相对的第一和第二表面对; 以及与纳米线重叠的信号波导，使得沿着信号波导传播的光信号通过由纳米线的电激励提供的能量被放大。

10. 发明授权

US08283556B2 Nanowire-based device and array with coaxial electrodes 有权
标题翻译：基于纳米线的器件和具有同轴电极的阵列
公开(公告)号：US08283556B2
公开(公告)日：2012-10-09
申请号：US12247860
申请日：2008-10-08
申请人： Nobuhiko Kobayashi , R. Stanley Williams , Shih-Yuan Wang
发明人： Nobuhiko Kobayashi , R. Stanley Williams , Shih-Yuan Wang
IPC分类号： H01L31/00 , H02N6/00
CPC分类号： H01L31/109 , B82Y20/00 , G02B5/003 , H01L31/022425 , H01L31/035227 , H01L31/0543 , H01L31/072 , Y02E10/52
摘要： A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes.
摘要翻译：基于纳米线的光子器件和阵列采用沿着电极的垂直范围以不均匀方式连接在同轴布置的电极之间的纳米线。该装置包括由圆周间隙分开的一对电极。纳米线从该对的内部电极混沌地发出并且跨越圆周间隙连接到该对的外部电极。该阵列包括外部电极，其具有电池和内部电极的互连图案，每个电池单元与外部电极同轴地布置并与外部电极分开，并由其间隔开。纳米线从内部电极混沌地发散并且跨过电池的各个周向间隙连接到外部电极。器件和阵列还包括电极之间的半导体结。

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