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1. 发明授权

US5892787A N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same 失效
标题翻译：在n型衬底上制造的N驱动p普通发光器件及其制造方法
公开(公告)号：US5892787A
公开(公告)日：1999-04-06
申请号：US635838
申请日：1996-04-22
申请人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang , Ghulam Hasnain , Yu-Min Houng
发明人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang , Ghulam Hasnain , Yu-Min Houng
IPC分类号： H01S5/00 , H01L33/00 , H01L33/30 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/42 , H01S3/19
CPC分类号： H01L33/30 , H01L33/0016 , H01L33/0062 , H01S5/18308 , H01S5/0207 , H01S5/0421 , H01S5/18305 , H01S5/2059 , H01S5/2063 , H01S5/3054 , H01S5/3095 , H01S5/423
摘要： A substantially n-type substrate structure having a p-type surface for use in semiconductor devices as a substitute for a p-type semiconductor substrate. The substrate structure comprises a substrate region and a buffer region. The substrate region is a region of n-type compound semiconductor, and includes a degeneratively n-doped portion adjacent its first surface. The buffer region is a region of compound semiconductor doped with a p-type dopant. The buffer region is located on the first surface of the substrate region and includes a surface remote from the substrate region that provides the p-type surface of the substrate structure. The buffer region also includes a degeneratively p-doped portion adjacent the degeneratively n-doped portion of the substrate region. The substrate structure includes a tunnel junction between the degeneratively n-doped portion of the substrate region and the degeneratively p-doped portion of the buffer region. The substrate structure is made by degeneratively doping a substrate region of n-type compound semiconductor material adjacent its first surface with an n-type impurity, and depositing a layer of compound semiconductor material doped with a p-type impurity on the first surface of the substrate region to form a buffer region that includes a surface remote from the substrate region. In the course of depositing the compound semiconductor material to form the buffer region, the compound semiconductor material is degeneratively doped with the p-type impurity at least in a portion adjacent the substrate region to form a tunnel junction between the substrate region and the buffer region.
摘要翻译：具有用于半导体器件的p型表面作为p型半导体衬底的替代物的基本为n型衬底结构。衬底结构包括衬底区域和缓冲区域。衬底区域是n型化合物半导体的区域，并且包括与其第一表面相邻的退化的n-掺杂部分。缓冲区是掺杂有p型掺杂剂的化合物半导体的区域。缓冲区域位于衬底区域的第一表面上并且包括远离衬底区域的表面，该表面提供衬底结构的p型表面。缓冲区还包括与衬底区域的退化的n掺杂部分相邻的退化的p掺杂部分。衬底结构包括在衬底区域的退化的n掺杂部分和缓冲区域的退化的p掺杂部分之间的隧道结。衬底结构是通过用n型杂质将邻近其第一表面的n型化合物半导体材料的衬底区域简单地掺杂制成的，并且在第一表面上沉积掺杂有p型杂质的化合物半导体材料层衬底区域以形成包括远离衬底区域的表面的缓冲区域。在沉积化合物半导体材料以形成缓冲区的过程中，化合物半导体材料至少在与衬底区域相邻的部分中被p型杂质退变掺杂以在衬底区域和缓冲区域之间形成隧道结。

2. 发明授权

US5266503A Method of making a surface emitting laser with oxygen ion implants followed by epitaxial regrowth 失效
标题翻译：用氧离子注入制造表面发射激光，然后进行外延再生的方法
公开(公告)号：US5266503A
公开(公告)日：1993-11-30
申请号：US771069
申请日：1991-10-02
申请人： Shih-Yuan Wang , Michael R. T. Tan
发明人： Shih-Yuan Wang , Michael R. T. Tan
IPC分类号： H01L21/76 , H01L33/00 , H01S5/183 , H01S5/20 , H01S5/223 , H01S5/24 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/7605 , H01L33/0062 , H01S5/0207 , H01S5/18308 , H01S5/18305 , H01S5/2063 , H01S5/2234 , H01S5/24 , H01S5/3432 , Y10S148/095
摘要： A surface emitting laser diode device is disclosed where an active layer is implanted with oxygen ions except for a small active region. The active region includes a pn junction for generating radiation in response to passage of electrical current therethrough. After the oxygen implantation, mirror layers are grown on top of the active layer to reflect light generated in the active region back into the active region to induce more radiation emission. Mirror layers are also provided underneath the active region for the same purpose. Contact layers are provided on the top and bottom of the structure just described so that when an electrical potential is applied between the two contacts, electrical current will flow between the contacts between the active region for generating radiation. The oxygen-implanted isolation region surrounds the active region in order to confine current flow to the active region.
摘要翻译：公开了一种表面发射激光二极管器件，其中除了小的有源区域之外，用氧离子注入有源层。有源区包括用于响应电流通过其中的辐射而产生辐射的pn结。在氧注入之后，镜层生长在有源层的顶部上，以将在有源区中产生的光反射回有源区，以引起更多的辐射发射。为了相同的目的，镜面层也设置在活动区域的下方。接触层设置在刚刚描述的结构的顶部和底部，使得当在两个触点之间施加电势时，电流将在用于产生辐射的有源区域之间的触点之间流动。氧注入的隔离区围绕有源区域，以限制电流流向有源区。

3. 发明申请

US20110272669A1 PLASMONIC LIGHT EMITTING DIODE 有权
标题翻译：等离子体发光二极管
公开(公告)号：US20110272669A1
公开(公告)日：2011-11-10
申请号：US13145995
申请日：2009-01-30
申请人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
发明人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/0062 , H01L33/02 , H01L33/04 , H01L33/20 , H01L33/30 , H01L33/387 , H01L33/40 , H01L2933/0016
摘要： A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.
摘要翻译：发光二极管（100或150）包括在增强层（142）和量子阱（120）之间包含量子阱（120），增强层（142）和阻挡层（144或148）的二极管结构）。增强层（142）以耦合到量子阱（120）中的电子和空穴的组合产生的光子的频率来支持等离子体振荡。阻挡层用于阻止增强层（142）和二极管结构之间的扩散。

4. 发明授权

US06650684B1 Surface emitting laser diodes with enhanced higher order spatial modes and/or filamentation 失效
标题翻译：具有增强的高阶空间模式和/或光纤的表面发射激光二极管
公开(公告)号：US06650684B1
公开(公告)日：2003-11-18
申请号：US08566222
申请日：1995-12-01
申请人： Michael R. T. Tan , Kenneth H. Hahn , Long Yang , Shih-Yuan Wang
发明人： Michael R. T. Tan , Kenneth H. Hahn , Long Yang , Shih-Yuan Wang
IPC分类号： H01S308
CPC分类号： H01S5/18375 , H01S5/0425 , H01S5/18327 , H01S5/18377 , H01S2301/18
摘要： A surface-emitting laser (“SEL”) having predictable filamentation initiation. The SEL includes a light generation layer and first and second mirror layers. The first and second mirror layers reflect light generated in the light generation region back toward the light generation region. Each of the mirrors reflects light such that it adds coherently to the light generated in the light generation region or to the light reflected from the other mirror. One of the mirrors includes a localized imperfection which causes light interacting therewith to be attenuated or shifted in phase relative to light that does not interact with the imperfection region. As a result, lasing filaments are preferentially initiated in the regions adjacent to the localized imperfection.
摘要翻译：具有可预测的丝状起始的表面发射激光器（“SEL”）。 SEL包括光产生层和第一和第二镜层。第一和第二镜像层将发光区域中产生的光反射回发光区域。每个反射镜反射光，使得它相干地添加到在光产生区域中产生的光或从另一个反射镜反射的光。其中一个反射镜包括局部缺陷，其导致与其相互作用的光相对于不与不完美区域相互作用的光相位相位衰减或偏移。结果，激光丝优先在与局部缺陷相邻的区域中起始。

5. 发明授权

US5771254A Integrated controlled intensity laser-based light source 失效
标题翻译：集成控制强度激光光源
公开(公告)号：US5771254A
公开(公告)日：1998-06-23
申请号：US660230
申请日：1996-06-03
申请人： Richard R. Baldwin , Scott W. Corzine , John P. Ertel , William D. Holland , Leif Eric Larson , David M. Sears , Michael R. T. Tan , Shih-Yuan Wang , Albert T. Yuen , Tao Zhang
发明人： Richard R. Baldwin , Scott W. Corzine , John P. Ertel , William D. Holland , Leif Eric Larson , David M. Sears , Michael R. T. Tan , Shih-Yuan Wang , Albert T. Yuen , Tao Zhang
IPC分类号： H01S3/102 , H01S5/022 , H01S5/026 , H01S5/06 , H01S5/183 , H01S3/10
CPC分类号： H01S5/02296 , H01S5/02288 , H01S5/02212 , H01S5/02228 , H01S5/02284 , H01S5/02292 , H01S5/026 , H01S5/0264 , H01S5/0683 , H01S5/183 , H01S5/423
摘要： An integrated laser-based light source that generates an output light beam having a controlled intensity. The light source comprises a package in which are mounted a laser, a light sensor and a coupler. The laser has one and only one light-emitting face from which a light beam is radiated as a radiated light beam. The light sensor generates an electrical signal representing the intensity of light energy falling it. The coupler couples a fraction of the radiated light beam to the light sensor, and provides the remainder of the radiated light beam as the output light beam. Since the light coupled to the light sensor by the coupler is a fraction of the radiated light beam, the electrical signal generated by the light sensor also represents the intensities of the radiated light beam and of the output light beam. A suitable control circuit, when fed with the electrical signal generated by the light sensor, can control the laser current to hold the electrical signal generated by the light sensor to a predetermined value that corresponds to the output light beam having a predetermined intensity.
摘要翻译：一种集成的基于激光的光源，其产生具有受控强度的输出光束。光源包括其中安装有激光器，光传感器和耦合器的封装。激光器具有一个且仅一个发光面，光束从该发光面照射为辐射光束。光传感器产生表示落在其上的光能强度的电信号。耦合器将辐射光束的一部分耦合到光传感器，并且将辐射光束的其余部分提供为输出光束。由于通过耦合器耦合到光传感器的光是辐射光束的一部分，所以由光传感器产生的电信号也表示辐射光束和输出光束的强度。合适的控制电路当馈送由光传感器产生的电信号时，可以控制激光电流以将由光传感器产生的电信号保持在与具有预定强度的输出光束对应的预定值。

6. 发明授权

US5729563A Method and apparatus for optically and thermally isolating surface emitting laser diodes 失效
标题翻译：用于光学和热隔离表面发射激光二极管的方法和装置
公开(公告)号：US5729563A
公开(公告)日：1998-03-17
申请号：US271606
申请日：1994-07-07
申请人： Shih-Yuan Wang , Michael R. T. Tan
发明人： Shih-Yuan Wang , Michael R. T. Tan
IPC分类号： H01S5/00 , H01S5/042 , H01S5/42 , H01S3/18
CPC分类号： H01S5/423 , H01S5/0425 , H01S5/18308 , H01S5/18347 , H01S5/2081
摘要： An SEL array having improved optical isolation and heat conduction. The SEL array is constructed from a light generation layer and first and second mirror layers that sandwich the light generation layer. The first mirror and second mirrors reflect light generated in the light generation layer back toward the light generation layer. The first mirror includes a plurality of light isolation regions, each light isolation region extending through the first mirror. The light isolation regions divide the light generation layer into a plurality of light generation regions. Each light generation region corresponds to one of the SELs. Each light isolation region is positioned to prevent light generated in one of the light generation regions from propagating into a neighboring light generation region. In one embodiment of the present invention, the light isolation regions are constructed by providing trenches that extend from the surface of the SEL array through the first mirror. The trenches may be filled with a light absorbing material. The trenches may also be filled with a heat conducting material thereby providing an improved heat dissipation path for heat generated by the SELs. The light isolation regions may also be generated by ion-implanting regions between the SELs or by disordering one of the mirrors in regions between the SELs.
摘要翻译：具有改进的光隔离和热传导的SEL阵列。 SEL阵列由光产生层和夹着光产生层的第一和第二镜层构成。第一镜和第二镜将发光层中产生的光反射回发光层。第一反射镜包括多个光隔离区域，每个光隔离区域延伸穿过第一反射镜。光隔离区域将光产生层分成多个发光区域。每个光产生区域对应于一个SEL。每个光隔离区域被定位成防止在一个光产生区域中产生的光传播到相邻的光产生区域。在本发明的一个实施例中，光隔离区域通过提供从SEL阵列的表面延伸穿过第一反射镜的沟槽而构成。沟槽可以填充有光吸收材料。沟槽也可以填充导热材料，从而为由SEL产生的热量提供改进的散热路径。光隔离区域也可以由SEL之间的离子注入区域产生，或者通过使SEL之间的区域中的一个反射镜失调来产生。

7. 发明授权

US5727014A Vertical-cavity surface-emitting laser generating light with a defined direction of polarization 失效
标题翻译：垂直腔表面发射激光产生具有确定的极化方向的光
公开(公告)号：US5727014A
公开(公告)日：1998-03-10
申请号：US551302
申请日：1995-10-31
申请人： Shih-Yuan Wang , Michael R. T. Tan , William D. Holland , John P. Ertel , Scott W. Corzine
发明人： Shih-Yuan Wang , Michael R. T. Tan , William D. Holland , John P. Ertel , Scott W. Corzine
IPC分类号： H01S5/00 , H01S5/183 , H01S5/30 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18355 , H01S5/18308 , H01S5/18338 , H01S5/18394 , H01S5/3054 , H01S5/3095 , H01S5/423
摘要： A vertical-cavity surface-emitting laser that generates light having a fixed direction of polarization. The laser has a plane light-generating region sandwiched between a first conductive mirror region and a second conductive mirror region. The first conductive mirror region has an opposite conductivity mode from the second conductive mirror region. The first conductive mirror region has a remote surface substantially parallel to the light-generating region and an electrode formed on the remote surface. The electrode bounds a light emission port from which the light is emitted in a direction defining an axis. A reduced-conductivity region is formed in the first conductive mirror region surrounding the axis and extending from the remote surface towards the light-emitting region to define a core region in the first conductive mirror region. The light emission port and/or the core region has first and second dimensions in orthogonal directions in a plane parallel to the light-generating region. The first dimension is greater than the second dimension to set the direction of polarization of the light to the direction of the first dimension.
摘要翻译：产生具有固定的偏振方向的光的垂直腔表面发射激光器。激光器具有夹在第一导电镜区域和第二导电镜面区域之间的平面发光区域。第一导电镜区域具有与第二导电镜区域相反的导电模式。第一导电镜区域具有基本上平行于发光区域的远程表面和形成在远程表面上的电极。电极在限定轴线的方向上限定发光的发光口。导电区域形成在围绕轴线的第一导电反射镜区域中，并从远程表面朝向发光区域延伸以在第一导电反射镜区域中限定芯区域。发光端口和/或芯区域在与发光区域平行的平面中具有正交方向上的第一和第二尺寸。第一尺寸大于第二尺寸以将光的偏振方向设置为第一尺寸的方向。

8. 发明授权

US5596595A Current and heat spreading transparent layers for surface-emitting lasers 失效
标题翻译：用于表面发射激光器的电流和散热透明层
公开(公告)号：US5596595A
公开(公告)日：1997-01-21
申请号：US486008
申请日：1995-06-08
申请人： Michael R. T. Tan , Yu-Min Houng , Shih-Yuan Wang
发明人： Michael R. T. Tan , Yu-Min Houng , Shih-Yuan Wang
IPC分类号： H01S3/04 , H01S5/00 , H01S5/024 , H01S5/042 , H01S5/183 , H01S3/08 , H01S3/18
CPC分类号： H01S5/18308 , H01S5/02461 , H01S5/02476 , H01S5/0425
摘要： A surface-emitting laser includes optically transparent layers on a side of a DBR mirror structure that is opposite to an optical cavity of the laser. In one embodiment, the transparent layer is a heat-conducting layer that has an efficient heat transfer relationship with an opening in a top electrode and with a heat-spreading layer. The heat-spreading layer increases the diameter of the electrode, so as to reduce the thermal impedance of the surface-emitting laser. The heat-spreading layer may be annular in shape and may have an inside diameter that is less than the outside diameter of the electrode, allowing the heat-spreading layer to first overlap the electrode and then overlap the portion of the heat-conducting layer that resides on the inside portion of the electrode. In another embodiment, the optically transparent layer is positioned between the top electrode and the top DBR mirror structure of the surface-emitting laser. In this embodiment, the transparent layer is a current-spreading layer that reduces the lateral resistance of the laser. Lateral resistance is reduced by providing a layer having a thickness of one-half of the wavelength of the light energy generated in the laser times an odd multiple greater than one. Optionally, two half-wavelength layers may be formed between the electrode and the mirror structure, with the upper layer being selected primarily for its electrical properties and the lower layer being selected primarily for its optical properties.
摘要翻译：表面发射激光器包括在与激光器的光腔相对的DBR镜结构侧的光学透明层。在一个实施例中，透明层是与顶部电极和散热层中的开口具有有效热传递关系的导热层。散热层增加了电极的直径，从而降低了表面发射激光器的热阻抗。散热层可以是环形的，并且可以具有小于电极的外径的内径，使得热扩散层首先与电极重叠，然后与导热层的部分重叠，位于电极的内部。在另一个实施例中，光学透明层位于表面发射激光器的顶部电极和顶部DBR镜面结构之间。在本实施例中，透明层是降低激光器的横向电阻的电流扩散层。通过提供具有在激光器中产生的光能的波长的一半的厚度的层的厚度乘以大于1的奇数倍来减小横向电阻。可选地，可以在电极和反射镜结构之间形成两个半波长层，其中上层主要由于其电性质而选择，而下层主要由于其光学性质而选择。

9. 发明授权

US5359447A Optical communication with vertical-cavity surface-emitting laser operating in multiple transverse modes 失效
标题翻译：与垂直腔表面发射激光器在多种横向模式下工作的光通信
公开(公告)号：US5359447A
公开(公告)日：1994-10-25
申请号：US83739
申请日：1993-06-25
申请人： Kenneth H. Hahn , Michael R. T. Tan , Shih-Yuan Wang
发明人： Kenneth H. Hahn , Michael R. T. Tan , Shih-Yuan Wang
IPC分类号： H04B10/00 , H01S5/00 , H01S5/183 , H04B10/02 , H04B10/13 , H04B10/28
CPC分类号： H01S5/18305 , H04B10/2581 , H01S5/18308 , H01S5/18375 , H01S5/18377 , H01S5/2063
摘要： An optical communication system using a relatively large-area vertical-cavity surface-emitting laser. The laser has an opening larger than about eight micrometers and is coupled to a multimode optical fiber. The laser is driven into multiple transverse mode operation, which includes multiple filamentation as well as operation in a single cavity.
摘要翻译：一种使用相对较大面积的垂直腔表面发射激光器的光通信系统。激光器具有大于约八微米的开口，并且耦合到多模光纤。激光器被驱动到多个横向模式操作中，其包括多个细丝以及在单个腔中的操作。

10. 发明授权

US09263637B2 Plasmonic light emitting diode 有权
标题翻译：等离子体发光二极管
公开(公告)号：US09263637B2
公开(公告)日：2016-02-16
申请号：US13145995
申请日：2009-01-30
申请人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
发明人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
IPC分类号： H01L33/00 , H01L33/20 , H01L33/02 , H01L33/04 , H01L33/38
CPC分类号： H01L33/06 , H01L33/0062 , H01L33/02 , H01L33/04 , H01L33/20 , H01L33/30 , H01L33/387 , H01L33/40 , H01L2933/0016
摘要： A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.
摘要翻译：发光二极管（100或150）包括在增强层（142）和量子阱（120）之间包含量子阱（120），增强层（142）和阻挡层（144或148）的二极管结构）。增强层（142）以耦合到量子阱（120）中的电子和空穴的组合产生的光子的频率来支持等离子体振荡。阻挡层用于阻止增强层（142）和二极管结构之间的扩散。

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