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1. 发明授权

US5762755A Organic preclean for improving vapor phase wafer etch uniformity 失效
标题翻译：用于改善气相晶片蚀刻均匀性的有机预清洁剂
公开(公告)号：US5762755A
公开(公告)日：1998-06-09
申请号：US994604
申请日：1992-12-21
申请人： Michael A. McNeilly , John M. deLarios , Glenn L. Nobinger , Wilbur C. Krusell , Dah-Bin Kao , Ralph K. Manriquez , Chiko Fan
发明人： Michael A. McNeilly , John M. deLarios , Glenn L. Nobinger , Wilbur C. Krusell , Dah-Bin Kao , Ralph K. Manriquez , Chiko Fan
IPC分类号： H01L21/00 , H01L21/306 , H01L21/311 , H01L21/302
CPC分类号： H01L21/02046 , H01L21/02019 , H01L21/02049 , H01L21/02052 , H01L21/30604 , H01L21/31116 , H01L21/67069 , Y10S438/906
摘要： A method for achieving greater uniformity and control in vapor phase etching of silicon, silicon oxide layers and related materials associated with wafers used for semiconductor devices comprises the steps of first cleaning the wafer surface to remove organics, followed by vapor phase etching. An integrated apparatus for cleaning organic and, subsequently, vapor phase etching, is also described. In embodiments of the invention cooling steps are incorporated to increase throughput, an on-demand vaporizer is provided to repeatably supply vapor at other than azeotropic concentration, and a residue-free etch process is provided.
摘要翻译：用于实现与用于半导体器件的晶片相关联的硅，氧化硅层和相关材料的气相蚀刻中更大的均匀性和控制的方法包括以下步骤：首先清洁晶片表面以去除有机物，随后进行气相蚀刻。还描述了一种用于清洁有机物并随后进行气相蚀刻的集成设备。在本发明的实施例中，结合冷却步骤以增加生产量，提供按需蒸发器以在不同于共沸浓度的情况下重复地供应蒸气，并且提供无残留的蚀刻工艺。

2. 发明授权

US5861066A Method and apparatus for cleaning edges of contaminated substrates 失效
标题翻译：清洁受污染基材边缘的方法和设备
公开(公告)号：US5861066A
公开(公告)日：1999-01-19
申请号：US640459
申请日：1996-05-01
申请人： Mansour Moinpour , Hoang T. Nguyen , Mohsen Salek , Young C. Park , Tom Bramblett , John M. deLarios , Lynn S. Ryle , Donald E. Anderson , Wilbur C. Krusell
发明人： Mansour Moinpour , Hoang T. Nguyen , Mohsen Salek , Young C. Park , Tom Bramblett , John M. deLarios , Lynn S. Ryle , Donald E. Anderson , Wilbur C. Krusell
IPC分类号： B08B1/04 , G11B23/50 , H01L21/00 , B08B7/00
CPC分类号： H01L21/67046 , B08B1/04 , H01L21/67028 , G11B23/505 , Y10S134/902
摘要： A method and apparatus for cleaning edges of substrates is described. The present invention provides a cleaning mechanism that cleans particles off the edge of the wafer based on friction and/or a difference in tangential velocity at a point of contact between the wafer and the cleaning mechanism.
摘要翻译：描述了用于清洁基板边缘的方法和装置。本发明提供了一种清洁机构，其基于晶片和清洁机构之间的接触点处的摩擦和/或切向速度差来清除晶片边缘的颗粒。

3. 发明授权

US06334229B1 Apparatus for cleaning edges of contaminated substrates 有权
标题翻译：用于清洁受污染基材边缘的设备
公开(公告)号：US06334229B1
公开(公告)日：2002-01-01
申请号：US09227272
申请日：1999-01-07
申请人： Mansour Moinpour , Hoang T. Nguyen , Mohsen Salek , Young C. Park , Tom Bramblett , John M. deLarios , Lynn S. Ryle , Donald E. Anderson , Wilbur C. Krusell
发明人： Mansour Moinpour , Hoang T. Nguyen , Mohsen Salek , Young C. Park , Tom Bramblett , John M. deLarios , Lynn S. Ryle , Donald E. Anderson , Wilbur C. Krusell
IPC分类号： B01B1102
CPC分类号： H01L21/67046 , B08B1/04 , G11B23/505 , H01L21/67028 , Y10S134/902
摘要： An apparatus for cleaning edges of substrates is described. The present invention provides a cleaning mechanism that cleans particles off the edge of the wafer based on friction and/or a difference in tangential velocity at a point of contact between the wafer and the cleaning mechanism.
摘要翻译：描述了一种用于清洁基板边缘的装置。本发明提供了一种清洁机构，其基于晶片和清洁机构之间的接触点处的摩擦和/或切向速度差来清除晶片边缘的颗粒。

4. 发明申请

US20090229638A1 METHOD OF DIELECTRIC FILM TREATMENT 有权
标题翻译：电介质膜处理方法
公开(公告)号：US20090229638A1
公开(公告)日：2009-09-17
申请号：US12048188
申请日：2008-03-13
申请人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
发明人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138
摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.
摘要翻译：用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。基于工艺参数识别多个应用化学物质。多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程，通过其形成特征的低k电介质材料。

5. 发明申请

US20070151583A1 Method and apparatus for particle removal 失效
标题翻译：颗粒去除的方法和装置
公开(公告)号：US20070151583A1
公开(公告)日：2007-07-05
申请号：US11543365
申请日：2006-10-04
申请人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fritz C. Redeker
发明人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fritz C. Redeker
IPC分类号： B08B3/00 , B08B3/12
CPC分类号： B08B3/024 , B08B3/003 , B08B3/08 , B08B6/00 , H01L21/67051
摘要： A method and system for cleaning a surface, having particulate matter thereon, of a substrate features impinging upon the surface a jet of a liquid having coupling elements entrained therein. A sufficient drag force is imparted upon the coupling elements to have the same move with respect to the liquid and cause the particulate matter to move with respect to the substrate.
摘要翻译：一种用于清洁其上具有颗粒物质的表面的表面的方法和系统，其特征在于其表面上具有夹带在其中的具有耦合元件的液体的射流。赋予联接元件足够的拖曳力以相对于液体具有相同的移动并使颗粒物质相对于基底移动。

6. 发明授权

US08522801B2 Method and apparatus for cleaning a semiconductor substrate 有权
标题翻译：用于清洁半导体衬底的方法和设备
公开(公告)号：US08522801B2
公开(公告)日：2013-09-03
申请号：US11612371
申请日：2006-12-18
申请人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/00
CPC分类号： B08B7/00 , B08B3/00 , B08B7/02 , C11D9/02 , C11D11/0047 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/31133 , H01L21/67028 , H01L21/6708 , H01L21/67086
摘要： A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided.
摘要翻译：提供一种清洗基板的方法。该方法通过将其中具有固体组分的流体层设置在基底的表面来启动。然后产生基本上平行于衬底的表面并朝向衬底的外边缘的剪切力。在一个实施例中，剪切力可以由施加到与流体层接触的固体的力的正常或切向分量产生。漂洗基材的表面以除去流体层。还提供清洁系统和装置。

7. 发明授权

US08316866B2 Method and apparatus for cleaning a semiconductor substrate 失效
标题翻译：用于清洁半导体衬底的方法和设备
公开(公告)号：US08316866B2
公开(公告)日：2012-11-27
申请号：US11612352
申请日：2006-12-18
申请人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/00
CPC分类号： H01L21/67092 , B08B3/00 , B08B7/00 , B08B7/02 , C11D9/02 , C11D11/0047 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02096 , H01L21/31133 , H01L21/67028 , H01L21/6708 , H01L21/67086 , Y10T137/4891
摘要： A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.
摘要翻译：提供一种清洗基板的方法。该方法通过将激活溶液施加到基底的表面来启动。活化溶液和基材的表面与固体清洁表面的表面接触。活化溶液被吸收到固体清洁元件的一部分中，然后基底或固体清洁表面相对于彼此移动以清洁基底的表面。还提供了一种用经历塑性变形的固体清洁元件来清洁基板的表面的方法。还提供了相应的清洁装置。

8. 发明授权

US06770151B1 Drying a substrate using a combination of substrate processing technologies 失效
标题翻译：使用基板处理技术的组合干燥基板
公开(公告)号：US06770151B1
公开(公告)日：2004-08-03
申请号：US10196497
申请日：2002-07-15
申请人： Michael Ravkin , Katrina Mikhaylichenko , John M. deLarios
发明人： Michael Ravkin , Katrina Mikhaylichenko , John M. deLarios
IPC分类号： B08B704
CPC分类号： H01L21/02052 , H01L21/31111 , H01L21/67028 , H01L21/67034
摘要： Methods for rinsing and drying a substrate are provided. In one example, a method for rinsing and drying a substrate includes providing a substrate for processing and securing the substrate in a hollow spin chuck. The hollow spin chuck with the substrate positioned therein is rotated at a first rate of rotation while a rinsing agent and a surface tension modifying agent are dispensed at a position that is an approximate center of the spinning substrate on both an active surface and a backside surface of the substrate. The dispensing is moved from the approximate center of the spinning substrate radially outward towards a periphery of the substrate. The dispensing is then discontinued, and the hollow spin chuck with the substrate positioned therein is rotated at a second rate of rotation.
摘要翻译：提供漂洗和干燥基材的方法。在一个实例中，用于冲洗和干燥衬底的方法包括提供用于将衬底加工并固定在中空自旋卡盘中的衬底。将位于其中的基板的空心旋转卡盘以第一旋转速度旋转，同时将漂洗剂和表面张力改性剂分配在活性表面和背面上的纺丝基材的大致中心的位置的基底。分配从旋转衬底的大致中心径向向外移动到衬底的周边。然后中止分配，并且其中定位有基底的空心旋转卡盘以第二旋转速度旋转。

9. 发明授权

US08608859B2 Method for removing contamination from a substrate and for making a cleaning solution 有权
标题翻译：用于从衬底去除污染物和制造清洁溶液的方法
公开(公告)号：US08608859B2
公开(公告)日：2013-12-17
申请号：US12768349
申请日：2010-04-27
申请人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： C11D7/50
CPC分类号： H01L21/02052 , B08B7/02 , C11D9/00 , C11D9/02 , C11D9/267 , C11D11/0047 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/42 , H01L21/02057 , H01L21/02096
摘要： A method is provided for removing contamination from a substrate. The method includes applying a cleaning solution having a dispersed phase, a continuous phase and particles dispersed within the continuous phase to a surface of the substrate. The method includes forcing one of the particles dispersed within the continuous phase proximate to one of the surface contaminants. The forcing is sufficient to overcome any repulsive forces between the particles and the surface contaminants so that the one of the particles and the one of the surface contaminants are engaged. The method also includes removing the engaged particle and surface contaminant from the surface of the substrate. A process to manufacture the cleaning material is also provided.
摘要翻译：提供了一种用于从衬底去除污染物的方法。该方法包括将具有分散相，连续相和分散在连续相内的颗粒的清洗溶液施加到基材的表面。该方法包括迫使分散在连续相内的颗粒中的一种接近一种表面污染物。强制足以克服颗粒和表面污染物之间的任何排斥力，使得颗粒中的一个和表面污染物之一接合。该方法还包括从基材的表面除去接合的颗粒和表面污染物。还提供了制造清洁材料的方法。

10. 发明授权

US09236279B2 Method of dielectric film treatment 有权
标题翻译：介电膜处理方法
公开(公告)号：US09236279B2
公开(公告)日：2016-01-12
申请号：US12048188
申请日：2008-03-13
申请人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
发明人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
IPC分类号： B08B3/04 , H01L21/67 , H01L21/02 , H01L21/3105 , H01L21/311
CPC分类号： H01L21/67051 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138
摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.
摘要翻译：用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。基于工艺参数识别多个应用化学物质。多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程，通过其形成特征的低k电介质材料。

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