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1. 发明授权

US07470450B2 Forming a silicon nitride film 有权
标题翻译：形成氮化硅膜
公开(公告)号：US07470450B2
公开(公告)日：2008-12-30
申请号：US10764193
申请日：2004-01-23
申请人： Michael L. McSwiney , Mansour Moinpour , Michael D. Goodner
发明人： Michael L. McSwiney , Mansour Moinpour , Michael D. Goodner
IPC分类号： C23C16/00
CPC分类号： C07F7/025 , C23C16/345 , H01L21/0217 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/02274
摘要： A silicon nitride film may be deposited on a work piece using conventional deposition techniques and a selected source for use as a silicon precursor. A nitrogen precursor may also be selected for film deposition. Using the selected precursor(s), the temperature for deposition may be 500° C., or less.
摘要翻译：氮化硅膜可以使用常规沉积技术和所选择的源用作硅前体而沉积在工件上。也可以选择氮前体用于膜沉积。使用所选择的前体，沉积温度可以为500℃以下。

2. 发明授权

US07125321B2 Multi-platen multi-slurry chemical mechanical polishing process 失效
标题翻译：多板多浆化学机械抛光工艺
公开(公告)号：US07125321B2
公开(公告)日：2006-10-24
申请号：US11014889
申请日：2004-12-17
申请人： Matthew J Prince , Mansour Moinpour , Francis M Tambwe , Gary Ding
发明人： Matthew J Prince , Mansour Moinpour , Francis M Tambwe , Gary Ding
IPC分类号： B24B1/00
CPC分类号： H01L21/31053 , B24B27/0076 , B24B37/042
摘要： A multi-platen, multi-slurry chemical mechanical polishing method comprises providing a substrate having a surface that includes at least one nitride structure and an oxide layer atop the nitride structure, performing a first CMP process on the substrate using a first platen with a silica based slurry to remove a bulk portion of the oxide layer without exposing the nitride structure, performing a second CMP process on the substrate using a second platen with a ceria based slurry to remove a residual portion of the oxide layer and to expose at least a portion of the nitride structure, and performing a third CMP process on the substrate using the first platen with a silica based slurry to remove at least one defect caused by the ceria based slurry.
摘要翻译：多压板多浆化学机械抛光方法包括提供具有包括至少一个氮化物结构和氮化物结构顶部的氧化物层的表面的衬底，使用具有二氧化硅的第一压板在衬底上进行第一CMP工艺在不暴露氮化物结构的情况下去除氧化物层的主体部分，使用具有二氧化铈基浆料的第二压板在衬底上执行第二CMP工艺以除去氧化物层的残余部分并暴露至少一部分的氮化物结构，并且使用具有二氧化硅基浆料的第一压板在衬底上进行第三CMP处理以除去由二氧化铈基浆料引起的至少一个缺陷。

3. 发明授权

US06365521B1 Passivation for tight metal geometry 失效
标题翻译：钝金属几何形状
公开(公告)号：US06365521B1
公开(公告)日：2002-04-02
申请号：US09001265
申请日：1997-12-31
申请人： Jan V. Shubert , Glen Wada , Mansour Moinpour , Yang-Chin Shih , Ken Schatz
发明人： Jan V. Shubert , Glen Wada , Mansour Moinpour , Yang-Chin Shih , Ken Schatz
IPC分类号： H01L21302
CPC分类号： H01L23/3192 , H01L23/3171 , H01L2924/0002 , H01L2924/00
摘要： A method of passivating an integrated circuit comprising providing an integrated circuit having a top side including a bond pad, depositing a first dielectric over said top side of said integrated circuit, exposing a first area portion of a top side of said bond pad, depositing a second dielectric of one of a material that is substantially impermeable to moisture over said top side of said integrated circuit, and exposing a second area portion of said top side of said bond pad, said second area portion within said first area portion is disclosed.
摘要翻译：一种钝化集成电路的方法，包括提供具有包括接合焊盘的顶侧的集成电路，在所述集成电路的所述顶侧上沉积第一电介质，暴露所述接合焊盘的顶侧的第一区域部分，在所述集成电路的所述顶侧基本上不透水的材料之一的第二电介质，以及暴露所述接合焊盘的所述顶侧的第二区域部分，所述第二区域部分在所述第一区域部分内。

4. 发明申请

US20090253270A1 DEPOSITION METHOD FOR HIGH-K DIELECTRIC MATERIALS 失效
标题翻译：高K介电材料沉积方法
公开(公告)号：US20090253270A1
公开(公告)日：2009-10-08
申请号：US12061584
申请日：2008-04-02
申请人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Mansour Moinpour
发明人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Mansour Moinpour
IPC分类号： H01L21/316 , C23C18/44
CPC分类号： H01L21/316 , C23C18/1216 , C23C18/1225 , C23C18/1245
摘要： A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.
摘要翻译：公开了一种在半导体衬底上沉积高k电介质材料的方法。该方法包括将化学浴施加到基底表面上，冲洗表面，向基底表面施加共反应物浴，并漂洗该表面。化学浴包括至少包含铪化合物，铝化合物，钛化合物，锆化合物，钪化合物，钇化合物或镧系元素化合物的金属前体。

5. 发明授权

US07229484B2 Pre-coated particles for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的预涂颗粒
公开(公告)号：US07229484B2
公开(公告)日：2007-06-12
申请号：US10307274
申请日：2002-11-27
申请人： Reza M. Golzarian , Mansour Moinpour , Andrea C. Oehler
发明人： Reza M. Golzarian , Mansour Moinpour , Andrea C. Oehler
IPC分类号： C09K3/14 , B05D3/00 , B05D5/00 , B05D1/00 , B24B37/04
CPC分类号： C09K3/14 , B24B37/044 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to the manufacture and use of novel pre-coated abrasive particles and particle slurries for the chemical mechanical polishing (CMP) of semiconductor wafers, thin films, inter-layer dielectric, metals, and other components during integrated circuit, flat panel display, or MEMS manufacturing. For example, polishing slurry abrasive particles can be pre-coated with additives, such as, inhibitors and/or surfactants during manufacture of the abrasive particles or slurry. The additive's opportunity to react directly with the abrasive particles early in the particle manufacturing process provides a slurry having a more stable, selectable, and predictable ratio of abrasive particles pre-coated with a more stable, selectable, and predictable amount and type of additives.
摘要翻译：本发明涉及在集成电路，平板中的半导体晶片，薄膜，层间电介质，金属和其它部件的化学机械抛光（CMP）的新型预涂磨料颗粒和颗粒浆料的制造和使用显示器件或MEMS制造。例如，抛光浆料磨料颗粒可以在制造磨料颗粒或浆料期间用添加剂例如抑制剂和/或表面活性剂预涂覆。添加剂在颗粒制造过程早期与磨料颗粒直接反应的机会提供了具有更稳定，可选择和可预测的磨料颗粒比例的浆料，该磨料颗粒预涂有更稳定，可选择和可预测的量和类型的添加剂。

6. 发明申请

US20060151003A1 Brush for cleaning wafer 失效
标题翻译：刷子清洗晶圆
公开(公告)号：US20060151003A1
公开(公告)日：2006-07-13
申请号：US11032858
申请日：2005-01-10
申请人： Huey-Chiang Liou , Alexander Tregub , Mansour Moinpour
发明人： Huey-Chiang Liou , Alexander Tregub , Mansour Moinpour
IPC分类号： C23G1/00 , B08B7/00 , B05D3/02 , B05D5/00 , H01L21/304
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/04
摘要： In a formulation of a wafer cleaning brush, forming a polymer solution with a plurality of nano-scale porogens or with a synthetic pore forming agent and curing the polymer solution to form a porous polymeric material.
摘要翻译：在晶片清洁刷的配方中，用多个纳米级致孔剂或合成成孔剂形成聚合物溶液并固化聚合物溶液以形成多孔聚合材料。

7. 发明授权

US07048434B2 Thermal analysis and characterization of layers and multiple layer structures 失效
标题翻译：层和多层结构的热分析和表征
公开(公告)号：US07048434B2
公开(公告)日：2006-05-23
申请号：US10247048
申请日：2002-09-17
申请人： Alex Tregub , Mansour Moinpour , David Fryer
发明人： Alex Tregub , Mansour Moinpour , David Fryer
IPC分类号： G01N25/20
CPC分类号： G01N25/4846
摘要： Thermally analysis of layers and multiple layer structures used in the semiconductor processing arts is disclosed. A modulated calorimetric analysis may be used to determine a thermal signature that characterizes the chemical properties of a sample of material. The signature may include one or more thermal properties such as heat capacities. The signature may be used to compare and infer the suitability of a material for use in an integrated circuit manufacturing process. A thermal signature for a material that is not known to be suitable for manufacturing integrated circuits may be compared with a thermal signature for a standard material that is known to be suitable in order to determine whether the aforementioned material is suitable. Multiple layer structures may also be analyzed, compared, and inferred, and approaches for determining thermal signatures for any individual layer of the multiple layer structure are disclosed.
摘要翻译：公开了半导体加工领域中使用的层和多层结构的热分析。可以使用调制的量热分析来确定表征材料样品的化学性质的热特征。签名可以包括一个或多个热性质，例如热容量。签名可用于比较和推断用于集成电路制造过程中的材料的适用性。可以将不知道适合于制造集成电路的材料的热学特征与已知适合于确定上述材料是否合适的标准材料的热学特征进行比较。还可以分析，比较和推断多层结构，并且公开了用于确定多层结构的任何单独层的热特征的方法。

8. 发明授权

US07469443B2 Brush for cleaning wafer 失效
标题翻译：刷子清洗晶圆
公开(公告)号：US07469443B2
公开(公告)日：2008-12-30
申请号：US11032858
申请日：2005-01-10
申请人： Huey-Chiang Liou , Alexander Tregub , Mansour Moinpour
发明人： Huey-Chiang Liou , Alexander Tregub , Mansour Moinpour
IPC分类号： B08B1/04
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/04
摘要： In a formulation of a wafer cleaning brush, forming a polymer solution with a plurality of nano-scale porogens or with a synthetic pore forming agent and curing the polymer solution to form a porous polymeric material.
摘要翻译：在晶片清洁刷的配方中，用多个纳米级致孔剂或合成成孔剂形成聚合物溶液并固化聚合物溶液以形成多孔聚合材料。

9. 发明申请

US20070251157A1 Pre-coated particles for chemical mechanical polishing 审中-公开
公开(公告)号：US20070251157A1
公开(公告)日：2007-11-01
申请号：US11820936
申请日：2007-06-21
申请人： Reza Golzarian , Mansour Moinpour , Andrea Oehler
发明人： Reza Golzarian , Mansour Moinpour , Andrea Oehler
IPC分类号： C09C1/68
CPC分类号： C09K3/14 , B24B37/044 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to the manufacture and use of novel pre-coated abrasive particles and particle slurries for the chemical mechanical polishing (CMP) of semiconductor wafers, thin films, inter-layer dielectric, metals, and other components during integrated circuit, flat panel display, or MEMS manufacturing. For example, polishing slurry abrasive particles can be pre-coated with additives, such as, inhibitors and/or surfactants during manufacture of the abrasive particles or slurry. The additive's opportunity to react directly with the abrasive particles early in the particle manufacturing process provides a slurry having a more stable, selectable, and predictable ratio of abrasive particles pre-coated with a more stable, selectable, and predictable amount and type of additives.

10. 发明授权

US07084053B2 Unidirectionally conductive materials for interconnection 失效
公开(公告)号：US07084053B2
公开(公告)日：2006-08-01
申请号：US10676294
申请日：2003-09-30
申请人： Reza M. Golzarian , Robert P. Meagley , Seiichi Morimoto , Mansour Moinpour
发明人： Reza M. Golzarian , Robert P. Meagley , Seiichi Morimoto , Mansour Moinpour
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.

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