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1. 发明申请

US20050176252A1 Two-stage load for processing both sides of a wafer 审中-公开
标题翻译：用于处理晶片两侧的两阶段负载
公开(公告)号：US20050176252A1
公开(公告)日：2005-08-11
申请号：US10775522
申请日：2004-02-10
申请人： Matthew Goodman , Ravinder Aggarwal , Mark Hawkins , Tony Keeton
发明人： Matthew Goodman , Ravinder Aggarwal , Mark Hawkins , Tony Keeton
IPC分类号： C23C16/00 , C23C16/458 , H01L21/302 , H01L21/687
CPC分类号： H01L21/68728 , B24B37/08 , C23C16/4583 , H01L21/68735
摘要： Disclosed herein is an apparatus and method for treating the frontside and backside of a semiconductor substrate with a process gas. A reactor chamber is equipped with a first load platform configured to permit the access of a process gas to both sides of a substrate. In some embodiments, the apparatus also comprises a second load platform configured for further processing the frontside of the substrate. The substrate is loaded on the first load platform and processed on both sides, then moved to the second load platform and processed on one side.
摘要翻译：本文公开了一种用工艺气体处理半导体衬底的前侧和后侧的装置和方法。反应室配备有第一负载平台，其构造成允许工艺气体进入衬底的两侧。在一些实施例中，该装置还包括配置用于进一步处理衬底的前侧的第二负载平台。将基板装载在第一负载平台上并在两侧进行处理，然后移动到第二负载平台并在一侧进行处理。

2. 发明申请

US20050011458A1 Wafer holder with peripheral lift ring 有权
标题翻译：带外围电梯环的晶圆架
公开(公告)号：US20050011458A1
公开(公告)日：2005-01-20
申请号：US10903083
申请日：2004-07-30
申请人： Ravinder Aggarwal , Tony Keeton , Matthew Goodman
发明人： Ravinder Aggarwal , Tony Keeton , Matthew Goodman
IPC分类号： C23C16/458 , C23C16/48 , H01L21/687 , H01L21/306
CPC分类号： H01L21/68735 , C23C16/4584 , C23C16/4585 , C23C16/481 , H01L21/68742
摘要： A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.
摘要翻译：用于在CVD处理室内支撑晶片的晶片保持器包括构造成支撑晶片的底部周边表面的可垂直移动的提升环，以及配置成在晶片处理期间支撑晶片的顶部平坦表面的内部插塞。提升环具有构造成紧密围绕内塞的中心孔。当将晶片装载到晶片保持器上时，升降环升高到内塞上方。晶片在提升位置被装载到提升环上。然后，提升环保持在升高位置一段足以允许晶片温度上升至足以显着降低甚至基本上防止晶片对晶片的热冲击的水平的时间，当晶片与内塞然后升降环下降到与内塞的周围接合。这是晶片保持器的晶片加工位置。

3. 发明授权

US08088225B2 Substrate support system for reduced autodoping and backside deposition 有权
标题翻译：用于减少自动掺杂和背面沉积的基板支撑系统
公开(公告)号：US08088225B2
公开(公告)日：2012-01-03
申请号：US12641712
申请日：2009-12-18
申请人： Matt G. Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory M. Bartlett , Joseph P. Italiano , Bob Haro
发明人： Matt G. Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory M. Bartlett , Joseph P. Italiano , Bob Haro
IPC分类号： C23C16/458 , C23C16/00 , H01L21/306
CPC分类号： H01L21/68735 , H01J37/32871 , H01L21/67028
摘要： A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).
摘要翻译：衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。向上输送的气体流入基板和基板支架之间的间隙。根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件（通过从扩散的掺杂剂原子远离衬底背面来抑制自掺杂）。

4. 发明申请

US20050193952A1 Substrate support system for reduced autodoping and backside deposition 有权
标题翻译：用于减少自动掺杂和背面沉积的基板支撑系统
公开(公告)号：US20050193952A1
公开(公告)日：2005-09-08
申请号：US11057111
申请日：2005-02-11
申请人： Matt Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory Bartlett , Joseph Italiano , Bob Haro
发明人： Matt Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory Bartlett , Joseph Italiano , Bob Haro
IPC分类号： C23C16/00 , C23C16/458 , C30B25/12 , C30B25/14 , H01L21/00 , H01L21/687
CPC分类号： H01L21/68735 , H01J37/32871 , H01L21/67028
摘要： A substrate support system comprises a relatively thin circular substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder includes a single substrate support ledge or a plurality of substrate support spacer vanes configured to support a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. The vanes can be angled to resist backside deposition of reactant gases as the substrate holder is rotated. A hollow support member provides support to an underside of the substrate holder. The hollow support member is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages of the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment of the invention, the gas in the gap can then flow either (1) outward and upward around the substrate edge or (2) downward through passages of the substrate holder, if any, that do not lead back into the hollow support member. The gas that flows outward and upward around the substrate edge inhibits backside deposition of reactant gases above the substrate. The gas that flows downward through the passages that do not lead back to the support member advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side. In one embodiment, the support member comprises a hollow multi-armed support spider that conveys gas into selected ones of the passages. In another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all of the passages. In yet another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all but one or more of the passages.
摘要翻译：衬底支撑系统包括相对薄的圆形衬底保持器，其具有在其顶表面和底表面之间延伸的多个通道。衬底保持器包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片，其构造成支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。当基板保持器旋转时，叶片可以成角度以抵抗反应气体的背面沉积。中空的支撑构件为衬底保持器的下侧提供支撑。中空支撑构件被构造成将气体（例如，惰性气体或清洁气体）向上输送到衬底保持器的一个或多个通道中。向上输送的气体流入基板和基板支架之间的间隙。根据本发明的实施例，间隙中的气体然后可以（1）围绕衬底边缘向外和向上流动，或者（2）向下通过衬底保持器的通道（如果有的话），其不会引导回到空心支持会员在衬底边缘周围向外和向上流动的气体阻止在衬底上方的反应物气体的背面沉积。通过通道向下流动的气体不会返回到支撑构件，有利地通过从扩散的掺杂剂原子远离衬底正面来扫除自发掺杂。在一个实施例中，支撑构件包括将气体输送到选定的通道中的中空多臂支撑蜘蛛。在另一个实施例中，支撑构件包括将气体向上输送到所有通道中的碗形或杯状结构。在另一个实施例中，支撑构件包括碗形或杯状结构，其将气体向上输送到除了一个或多个通道中的所有通道中。

5. 发明授权

US07648579B2 Substrate support system for reduced autodoping and backside deposition 有权
标题翻译：用于减少自动掺杂和背面沉积的基板支撑系统
公开(公告)号：US07648579B2
公开(公告)日：2010-01-19
申请号：US11057111
申请日：2005-02-11
申请人： Matt G. Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory M. Bartlett , Joseph P. Italiano , Bob Haro
发明人： Matt G. Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory M. Bartlett , Joseph P. Italiano , Bob Haro
IPC分类号： C23C16/458 , C23C16/00 , H01L21/306
CPC分类号： H01L21/68735 , H01J37/32871 , H01L21/67028
摘要： A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).
摘要翻译：衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。向上输送的气体流入基板和基板支架之间的间隙。根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件（通过从扩散的掺杂剂原子远离衬底背面来抑制自掺杂）。

6. 发明申请

US20100089314A1 SUBSTRATE SUPPORT SYSTEM FOR REDUCED AUTODOPING AND BACKSIDE DEPOSITION 有权
标题翻译：用于减少自动化和背面沉积的基板支撑系统
公开(公告)号：US20100089314A1
公开(公告)日：2010-04-15
申请号：US12641712
申请日：2009-12-18
申请人： Matt G. Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory M. Bartlett , Joseph P. Italiano , Bob Haro
发明人： Matt G. Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory M. Bartlett , Joseph P. Italiano , Bob Haro
IPC分类号： B05C13/00
CPC分类号： H01L21/68735 , H01J37/32871 , H01L21/67028
摘要： A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).
摘要翻译：衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。向上输送的气体流入基板和基板支架之间的间隙。根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件（通过从扩散的掺杂剂原子远离衬底背面来抑制自掺杂）。

7. 发明授权

US06879777B2 Localized heating of substrates using optics 有权
标题翻译：使用光学元件的基板的局部加热
公开(公告)号：US06879777B2
公开(公告)日：2005-04-12
申请号：US10265519
申请日：2002-10-03
申请人： Matthew G. Goodman , Tony J Keeton , Ravinder Aggarwal , Mark Hawkins
发明人： Matthew G. Goodman , Tony J Keeton , Ravinder Aggarwal , Mark Hawkins
IPC分类号： H01L21/00 , F26B3/30
CPC分类号： H01L21/67115
摘要： An apparatus for processing a semiconductor substrate, including a process chamber having a plurality of walls and a substrate support to support the substrate within the process chamber. A radiative heat source is positioned outside the process chamber to heat the substrate through the walls when the substrate is positioned on the substrate support. In some embodiments, lenses are positioned between the heat source and the substrate to focus or diffuse radiation from the heat source and thereby selectively alter the radiation intensity incident on certain portions of the substrate. In other embodiments, diffusing surfaces are positioned between the heat source and the substrate to diffuse radiation from the heat source and thereby selectively reduce the radiation intensity incident on certain portions of the substrate.
摘要翻译：一种用于处理半导体衬底的设备，包括具有多个壁的处理室和用于在处理室内支撑衬底的衬底支撑件。当衬底定位在衬底支撑件上时，辐射热源位于处理室外部以通过壁加热衬底。在一些实施例中，透镜位于热源和基板之间，以聚焦或散射来自热源的辐射，从而选择性地改变入射在基板的某些部分上的辐射强度。在其它实施例中，扩散表面位于热源和衬底之间以扩散来自热源的辐射，从而选择性地降低入射到衬底的某些部分上的辐射强度。

8. 发明授权

US08047706B2 Calibration of temperature control system for semiconductor processing chamber 有权
标题翻译：半导体处理室温度控制系统校准
公开(公告)号：US08047706B2
公开(公告)日：2011-11-01
申请号：US12273440
申请日：2008-11-18
申请人： Matthew G. Goodman , Mark Hawkins , Ravinder Aggarwal , Michael Givens , Eric Hill , Gregory Bartlett
发明人： Matthew G. Goodman , Mark Hawkins , Ravinder Aggarwal , Michael Givens , Eric Hill , Gregory Bartlett
IPC分类号： G01K15/00
CPC分类号： G01K15/00
摘要： Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.
摘要翻译：用于校准气相沉积室中的温度控制系统的方法和系统。温度传感器感测半导体处理室内的温度并产生输出信号。温度控制系统通过基于输出信号控制加热装置来控制室温度。一种方法包括指示控制系统目标设定点温度，以及通过气相沉积工艺将一层材料沉积在腔室的表面上。在沉积层时测量该层的性质的变化，已知随着层的厚度周期性变化的性质增加。允许测量的特性循环变化一个或多个循环。如果一个或多个循环的时间段与与设定点温度相关联的期望时间段之间存在差异，则基于该差异来调整温度控制系统。

9. 发明授权

US08262287B2 Thermocouple 有权
标题翻译：热电偶
公开(公告)号：US08262287B2
公开(公告)日：2012-09-11
申请号：US12330096
申请日：2008-12-08
申请人： Buz Darabnia , Andy Yednak , Mike Halpin , Loren Jacobs , Ravinder Aggarwal
发明人： Buz Darabnia , Andy Yednak , Mike Halpin , Loren Jacobs , Ravinder Aggarwal
IPC分类号： G05D23/00 , G01K7/02
CPC分类号： G01K7/04 , C23C16/46 , G01K13/00
摘要： A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.
摘要翻译：描述了用于半导体加工反应的热电偶。热电偶包括具有测量尖端和在相对端的开口的护套。接收第一线和第二线的一部分的支撑构件被容纳在护套内。第一和第二线形成在测量尖端处接触鞘的内表面的接合点。间隔构件固定在护套的开口处并接收支撑构件。间隔构件允许支撑构件，第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

10. 发明申请

US20120031340A1 REACTION APPARATUS HAVING MULTIPLE ADJUSTABLE EXHAUST PORTS 审中-公开
标题翻译：具有多个可调节排气口的反应装置
公开(公告)号：US20120031340A1
公开(公告)日：2012-02-09
申请号：US13276515
申请日：2011-10-19
申请人： Ravinder Aggarwal , Jeroen Stoutjesdijk
发明人： Ravinder Aggarwal , Jeroen Stoutjesdijk
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52 , B01J19/00
CPC分类号： C23C16/4412 , C23C16/455 , C23C16/45502 , C23C16/45504 , C23C16/45563 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4584
摘要： A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports selectively modifies the flow pattern of the reactant gases within the reaction chamber to maintain a desired flow pattern therewithin, such as a substantially uniform flow over the surface of a substrate being processed, and/or minimization of turbulence within the reactor.
摘要翻译：一种用于半导体制造装置的反应装置，其中反应装置包括至少两个可调节的出口，用于从反应室中抽出反应气体。通过每个出口端口的流量的调节选择性地修改反应室内的反应气体的流动模式，以在其中维持所需的流动模式，例如在正被处理的基底的表面上的基本均匀的流动，和/或反应器内湍流的最小化。

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