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    • 4. 发明申请
    • Substrate support system for reduced autodoping and backside deposition
    • 用于减少自动掺杂和背面沉积的基板支撑系统
    • US20050193952A1
    • 2005-09-08
    • US11057111
    • 2005-02-11
    • Matt GoodmanJereon StoutyesdijkRavinder AggarwalMike HalpinTony KeetonMark HawkinsLee HaenArmand FerroPaul BrabantRobert VyneGregory BartlettJoseph ItalianoBob Haro
    • Matt GoodmanJereon StoutyesdijkRavinder AggarwalMike HalpinTony KeetonMark HawkinsLee HaenArmand FerroPaul BrabantRobert VyneGregory BartlettJoseph ItalianoBob Haro
    • C23C16/00C23C16/458C30B25/12C30B25/14H01L21/00H01L21/687
    • H01L21/68735H01J37/32871H01L21/67028
    • A substrate support system comprises a relatively thin circular substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder includes a single substrate support ledge or a plurality of substrate support spacer vanes configured to support a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. The vanes can be angled to resist backside deposition of reactant gases as the substrate holder is rotated. A hollow support member provides support to an underside of the substrate holder. The hollow support member is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages of the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment of the invention, the gas in the gap can then flow either (1) outward and upward around the substrate edge or (2) downward through passages of the substrate holder, if any, that do not lead back into the hollow support member. The gas that flows outward and upward around the substrate edge inhibits backside deposition of reactant gases above the substrate. The gas that flows downward through the passages that do not lead back to the support member advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side. In one embodiment, the support member comprises a hollow multi-armed support spider that conveys gas into selected ones of the passages. In another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all of the passages. In yet another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all but one or more of the passages.
    • 衬底支撑系统包括相对薄的圆形衬底保持器,其具有在其顶表面和底表面之间延伸的多个通道。 衬底保持器包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片,其构造成支撑衬底背面的周边部分,使得在衬底和衬底保持器之间形成薄的间隙。 当基板保持器旋转时,叶片可以成角度以抵抗反应气体的背面沉积。 中空的支撑构件为衬底保持器的下侧提供支撑。 中空支撑构件被构造成将气体(例如,惰性气体或清洁气体)向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据本发明的实施例,间隙中的气体然后可以(1)围绕衬底边缘向外和向上流动,或者(2)向下通过衬底保持器的通道(如果有的话),其不会引导回到空心 支持会员 在衬底边缘周围向外和向上流动的气体阻止在衬底上方的反应物气体的背面沉积。 通过通道向下流动的气体不会返回到支撑构件,有利地通过从扩散的掺杂​​剂原子远离衬底正面来扫除自发掺杂。 在一个实施例中,支撑构件包括将气体输送到选定的通道中的中空多臂支撑蜘蛛。 在另一个实施例中,支撑构件包括将气体向上输送到所有通道中的碗形或杯状结构。 在另一个实施例中,支撑构件包括碗形或杯状结构,其将气体向上输送到除了一个或多个通道中的所有通道中。
    • 5. 发明授权
    • Non-contact cool-down station for wafers
    • 用于晶圆的非接触式冷却站
    • US06883250B1
    • 2005-04-26
    • US10701681
    • 2003-11-04
    • Ravinder AggarwalBob Haro
    • Ravinder AggarwalBob Haro
    • H01L21/00F26B7/00F25D25/00
    • H01L21/67196H01L21/67109
    • A stationary cooling station for cooling wafers after the wafers have been subjected to semiconductor processing supports the wafer by flowing gas in accordance with the Bernoulli principle. An upper wall of the cooling station contains a plurality of gas outlets that direct gas to flow over the top surface of the wafer. In this way, a low-pressure region is created over the wafer and the wafer is suspended within the cooling station, without directly contacting any surface for support. In addition to providing lift for the wafer, the gas is a thermally conductive gas that can cool the wafer by conducting heat away from it.
    • 用于在晶片经过半导体处理之后冷却晶片的固定式冷却站通过根据伯努利原理流动气体来支撑晶片。 冷却站的上壁包含多个气体出口,其引导气体流过晶片的顶表面。 以这种方式,在晶片上形成低压区域,并且将晶片悬挂在冷却站内,而不直接接触用于支撑的任何表面。 除了为晶片提供电梯之外,气体是导热气体,其可以通过将热量远离其来冷却晶片。
    • 10. 发明授权
    • Non-contact cool-down station for wafers
    • 用于晶圆的非接触式冷却站
    • US07147720B2
    • 2006-12-12
    • US11059188
    • 2005-02-15
    • Ravinder AggarwalBob Haro
    • Ravinder AggarwalBob Haro
    • C23C16/00H01L21/00
    • H01L21/67196H01L21/67109
    • A stationary cooling station for cooling wafers after the wafers have been subjected to semiconductor processing supports the wafer by flowing gas in accordance with the Bernoulli principle. An upper wall of the cooling station contains a plurality of gas outlets that direct gas to flow over the top surface of the wafer. In this way, a low-pressure region is created over the wafer and the wafer is suspended within the cooling station, without directly contacting any surface for support. In addition to providing lift for the wafer, the gas is a thermally conductive gas that can cool the wafer by conducting heat away from it.
    • 用于在晶片经过半导体处理之后冷却晶片的固定式冷却站通过根据伯努利原理流动气体来支撑晶片。 冷却站的上壁包含多个气体出口,其引导气体流过晶片的顶表面。 以这种方式,在晶片上形成低压区域,并且将晶片悬挂在冷却站内,而不直接接触用于支撑的任何表面。 除了为晶片提供电梯之外,气体是导热气体,其可以通过将热量远离其来冷却晶片。