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1. 发明授权

US5571750A Method for producing a semiconductor laser device 失效
公开(公告)号：US5571750A
公开(公告)日：1996-11-05
申请号：US314585
申请日：1994-09-28
申请人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osumu Yamamoto , Mitsuhiro Matsumoto
发明人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osumu Yamamoto , Mitsuhiro Matsumoto
IPC分类号： H01S5/02 , H01S5/028 , H01S5/042 , H01S5/16 , H01L21/20
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.

2. 发明授权

US5413956A Method for producing a semiconductor laser device 失效
标题翻译：半导体激光装置的制造方法
公开(公告)号：US5413956A
公开(公告)日：1995-05-09
申请号：US995064
申请日：1992-12-22
申请人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osamu Yamamoto , Mitsuhiro Matsumoto
发明人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osamu Yamamoto , Mitsuhiro Matsumoto
IPC分类号： H01S5/02 , H01S5/028 , H01S5/042 , H01S5/16 , H01L21/20
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.
摘要翻译：一种制造半导体激光器件的方法包括以下步骤：在内部结构的顶表面或衬底的反面中的任一个上以及在内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 以及在通过蚀刻除去窗口层的表面上和在另一个表面上形成电极。制造半导体激光器件的另一种方法包括以下步骤：在棒的发光端面形成窗口层; 将棒插入具有用于形成电极的开口的装置和用于防止棒和开口之间的位置偏移的支撑部分，以及在棒的顶表面和反面上形成电极; 并将条切成芯片。

3. 发明授权

US5228047A Semiconductor laser device and a method for producing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US5228047A
公开(公告)日：1993-07-13
申请号：US762769
申请日：1991-09-20
申请人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
发明人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
IPC分类号： H01L33/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/323
CPC分类号： H01S5/164 , H01L33/0062 , H01S2301/18 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325
摘要： A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.

4. 发明授权

US5309001A Light-emitting diode having a surface electrode of a tree-like form 失效
标题翻译：具有树状形状的表面电极的发光二极管
公开(公告)号：US5309001A
公开(公告)日：1994-05-03
申请号：US980666
申请日：1992-11-24
申请人： Masanori Watanabe , Mitsuhiro Matsumoto , Hiroshi Nakatsu , Tadashi Takeoka , Osamu Yamamoto , Kazuaki Sasaki
发明人： Masanori Watanabe , Mitsuhiro Matsumoto , Hiroshi Nakatsu , Tadashi Takeoka , Osamu Yamamoto , Kazuaki Sasaki
IPC分类号： H01L33/38 , H01L33/00
CPC分类号： H01L33/385 , H01L33/38 , H01L33/20 , H01L33/24
摘要： A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
摘要翻译： LED的表面上的表面电极具有焊盘，并且至少一级从焊盘线性延伸的分支，二阶分支从一级分支发散并线性延伸，三阶分支发散，从二阶分支线性延伸。表面电极中的焊盘不与下面的半导体层电接触，而表面电极和半导体层在最高级分支的端部彼此电接触。而且，半导体层沿着台面形状的表面电极的图案设置。因此，表面电极下方的无效光发射相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至可以通过高效率地允许更短波长的光线出射。

5. 发明授权

US5208468A Semiconductor laser device with a sulfur-containing film provided between the facet and the protective film 失效
标题翻译：半导体激光装置具有设置在小面和保护膜之间的含硫膜
公开(公告)号：US5208468A
公开(公告)日：1993-05-04
申请号：US727375
申请日：1991-07-05
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
IPC分类号： H01S5/02 , H01S5/028
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译：公开了从小面发射激光的半导体激光器件。半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和保护膜。

6. 发明授权

US5260231A Method for the production of a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US5260231A
公开(公告)日：1993-11-09
申请号：US998436
申请日：1992-12-30
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
IPC分类号： H01S5/02 , H01S5/028 , H01L21/20
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283 , Y10S148/095
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译：公开了从小面发射激光的半导体激光器件。半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和保护膜。

7. 发明授权

US5171706A Method for the production of a semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US5171706A
公开(公告)日：1992-12-15
申请号：US739767
申请日：1991-08-01
申请人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo
发明人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo
IPC分类号： H01S5/00 , H01L21/314 , H01S5/02 , H01S5/028 , H01S5/16
CPC分类号： H01S5/164 , H01L21/314 , H01S5/0202 , H01S5/0281 , H01S5/0282
摘要： There is provided a method for the production of a semiconductor laser device which emits laser light from a facet. The method includes the steps of: growing a multi-layered structure containing an active layer for laser oscillation on a semiconductor substrate to form a wafer; etching the multi-layered structure to form a striped groove perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets; bringing the facets into contact with a sulfur-containing solution; subjecting the facets to heat treatment; growing a semiconductor layer on the surface of the facets, which has a band gap greater than that of the active layer; and cleaving the wafer along the striped groove to obtain a semiconductor laser device.

8. 发明授权

US5042044A Semiconductor laser device, a semiconductor wafer 失效
标题翻译：半导体激光器件，半导体晶片
公开(公告)号：US5042044A
公开(公告)日：1991-08-20
申请号：US513508
申请日：1990-04-27
申请人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
发明人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
IPC分类号： H01S5/24 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.1.degree.

9. 发明授权

US5404031A Semiconductor light emitting device with current confining layer 失效
标题翻译：具有电流限制层的半导体发光器件
公开(公告)号：US5404031A
公开(公告)日：1995-04-04
申请号：US270115
申请日：1994-07-01
申请人： Kazuaki Sasaki , Hiroshi Nakatsu , Osamu Yamamoto , Masanori Watanabe , Saburo Yamamoto
发明人： Kazuaki Sasaki , Hiroshi Nakatsu , Osamu Yamamoto , Masanori Watanabe , Saburo Yamamoto
IPC分类号： H01L33/00 , H01L33/10 , H01L33/14 , H01L33/24 , H01L33/28 , H01L33/30 , H01L33/38
CPC分类号： H01L33/38 , H01L33/0062 , H01L33/10 , H01L33/145 , H01L33/24 , H01L33/405
摘要： A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.
摘要翻译：公开了一种半导体发光器件，其通过向有源层的一部分提供电流来允许有源层的一部分产生光。半导体发光器件包括：具有上表面和下表面的半导体衬底，上表面具有阶梯部分，阶梯部分将上表面分成至少第一区域和第二区域; 形成在所述基板的上表面上的电流限制层，所述电流限制层在所述阶梯部分处是不连续的，所述电流流过所述第一区域和所述基板的所述第二区域之间的区域; 形成在电流限制层上的多层结构，所述多层结构包括有源层; 仅覆盖所述多层结构的上表面的一部分的第一电极; 以及形成在所述基板的下表面上的第二电极。在半导体发光器件中，从有源层的一部分产生的光通过未被第一电极覆盖的多层结构的上表面的一部分提取到外部。

10. 发明申请

US20070161897A1 Ultrasonic treatment equipment 失效
标题翻译：超声波处理设备
公开(公告)号：US20070161897A1
公开(公告)日：2007-07-12
申请号：US10557237
申请日：2004-05-18
申请人： Kazuaki Sasaki , Takashi Azuma , Ken-ichi Kawabata , Shin-ichiro Umemura , Takashi Okai , Tetsuya Ishikawa
发明人： Kazuaki Sasaki , Takashi Azuma , Ken-ichi Kawabata , Shin-ichiro Umemura , Takashi Okai , Tetsuya Ishikawa
IPC分类号： A61B8/00
CPC分类号： A61N7/02 , A61B8/06 , A61B8/13 , A61B2090/378
摘要： Ultrasonic treatment equipment is provided which repeats therapeutic ultrasound exposure while measuring a degree of vessel constriction on a therapeutic ultrasound exposure basis. This equipment includes: a therapeutic ultrasonic transducer 2 which exposes a blood vessel of an affected part to a focused therapeutic ultrasonic wave for a specified period of exposure time; an imaging ultrasonic probe 3 which images an ultrasound tomographic image of the affected part; a display unit 24 which displays the ultrasound tomographic image; means 21 for detecting a blood flow signal from a signal received by the imaging ultrasonic probe and determining the blood flow velocity of the blood vessels of the affected part; means 21 for calculating a rate of change in blood flow velocity during the exposure to the therapeutic ultrasonic wave or before and after the exposure to the therapeutic ultrasonic wave; and means 23 for controlling exposure conditions of the therapeutic ultrasonic wave on the basis of the rate of change in blood flow velocity, and thereby controlling the therapeutic ultrasonic transducer.
摘要翻译：提供超声波处理设备，其在治疗超声暴露基础上测量血管收缩程度时重复治疗性超声波暴露。该设备包括：治疗超声波换能器2，其将受影响部分的血管暴露于聚焦的治疗超声波达指定的曝光时间; 成像超声波探头3，其对受影响部分的超声断层图像进行成像; 显示单元24，其显示超声断层图像; 用于从由成像超声波探头接收的信号中检测血流信号并确定受影响部分的血管的血流速度的装置21; 用于计算暴露于治疗超声波期间或暴露于治疗超声波之前和之后的血流速度变化率的装置21; 以及基于血流速度变化率来控制治疗超声波的暴露条件的装置23，由此控制治疗用超声波换能器。

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