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1. 发明授权

US5042044A Semiconductor laser device, a semiconductor wafer 失效
标题翻译：半导体激光器件，半导体晶片
公开(公告)号：US5042044A
公开(公告)日：1991-08-20
申请号：US513508
申请日：1990-04-27
申请人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
发明人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
IPC分类号： H01S5/24 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.1.degree.

2. 发明授权

US4984244A Semiconductor laser device 失效
公开(公告)号：US4984244A
公开(公告)日：1991-01-08
申请号：US406903
申请日：1989-09-13
申请人： Saburo Yamamoto , Taiji Morimoto , Kazuaki Sasaki , Masaki Kondo , Takahiro Suyama , Masafumi Kondo
发明人： Saburo Yamamoto , Taiji Morimoto , Kazuaki Sasaki , Masaki Kondo , Takahiro Suyama , Masafumi Kondo
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate, a striped mesa disposed on the substrate and having an active layer for laser oscillation, a current injection layer disposed on the striped mesa and having a width smaller than that of the striped mesa, and a burying layer disposed on both sides of the current injection layer so as to come into contact with the side walls of the current injection layer, the burying layer being capable of absorbing laser light produce in the active layer and of preventing current from flowing through the outside of the striped mesa.

3. 发明授权

US5208468A Semiconductor laser device with a sulfur-containing film provided between the facet and the protective film 失效
标题翻译：半导体激光装置具有设置在小面和保护膜之间的含硫膜
公开(公告)号：US5208468A
公开(公告)日：1993-05-04
申请号：US727375
申请日：1991-07-05
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
IPC分类号： H01S5/02 , H01S5/028
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译：公开了从小面发射激光的半导体激光器件。半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和保护膜。

4. 发明授权

US5260231A Method for the production of a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US5260231A
公开(公告)日：1993-11-09
申请号：US998436
申请日：1992-12-30
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
IPC分类号： H01S5/02 , H01S5/028 , H01L21/20
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283 , Y10S148/095
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译：公开了从小面发射激光的半导体激光器件。半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和保护膜。

5. 发明授权

US5228047A Semiconductor laser device and a method for producing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US5228047A
公开(公告)日：1993-07-13
申请号：US762769
申请日：1991-09-20
申请人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
发明人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
IPC分类号： H01L33/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/323
CPC分类号： H01S5/164 , H01L33/0062 , H01S2301/18 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325
摘要： A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.

6. 发明授权

US4977568A Semiconductor laser device 失效
公开(公告)号：US4977568A
公开(公告)日：1990-12-11
申请号：US286682
申请日：1988-12-19
申请人： Saburo Yamamoto , Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo
发明人： Saburo Yamamoto , Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo
IPC分类号： H01S5/12 , H01S5/223 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/12 , H01S5/2234 , H01S5/2235 , H01S5/2277
摘要： There is disclosed a semiconductor laser device with a strip-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation. This semiconductor laser device comprises an optical waveguide that a semiconductor laser device with a stripe-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation, which semiconductor laser device comprises: an optical waveguide that is formed within the active layer just above the striped channel of the substrate based on a decrease in the effective refractive index due to the striped channel, the outside of which absorbs a laser beam produced in the active layer; a striped mesa that is formed by the removal of the portions of the multi-layered crystal corresponding to the outside of the optical waveguide; and a plurality of burying layers that are grown into the removed portions to prevent the diffusion of carrier in the transverse direction within the active layer.

7. 发明授权

US4860299A Semiconductor laser device 失效
公开(公告)号：US4860299A
公开(公告)日：1989-08-22
申请号：US195069
申请日：1988-05-17
申请人： Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo , Saburo Yamamoto
发明人： Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2232 , H01S5/2275
摘要： A semiconductor laser device comprising a substrate; a current blocking layer disposed on the substrate; a striped channel formed in a manner to reach the substrate through the current blocking layer; a striped mesa disposed on the area of the V-channel, the striped mesa being of a multi-layered crystal that is composed of a first cladding layer, an active layer, a second cladding layer, and a protective layer in that order; and burying layers having at least one of the following two, a pn-reverse bias junction and a high resistant crystal, the burying layer being formed on both sides of the striped mesa, wherein the protective layer is made of Ga.sub.1-x Al.sub.x As (x>O).

8. 发明授权

US5171706A Method for the production of a semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US5171706A
公开(公告)日：1992-12-15
申请号：US739767
申请日：1991-08-01
申请人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo
发明人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo
IPC分类号： H01S5/00 , H01L21/314 , H01S5/02 , H01S5/028 , H01S5/16
CPC分类号： H01S5/164 , H01L21/314 , H01S5/0202 , H01S5/0281 , H01S5/0282
摘要： There is provided a method for the production of a semiconductor laser device which emits laser light from a facet. The method includes the steps of: growing a multi-layered structure containing an active layer for laser oscillation on a semiconductor substrate to form a wafer; etching the multi-layered structure to form a striped groove perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets; bringing the facets into contact with a sulfur-containing solution; subjecting the facets to heat treatment; growing a semiconductor layer on the surface of the facets, which has a band gap greater than that of the active layer; and cleaving the wafer along the striped groove to obtain a semiconductor laser device.

9. 发明授权

US08786894B2 Image processing apparatus 有权
标题翻译：图像处理装置
公开(公告)号：US08786894B2
公开(公告)日：2014-07-22
申请号：US13051032
申请日：2011-03-18
申请人： Masaki Kondo
发明人： Masaki Kondo
IPC分类号： G06K15/02 , G06K15/00 , H04N1/60 , H04N1/40 , H04N1/405 , H04N1/04
CPC分类号： G06K15/1878 , G06K15/1871 , H04N1/58
摘要： An image processing apparatus causes a printing executing section to perform a printing process using color-materials, the image processing apparatus includes: a first processing unit that performs a first image-processing by processing original image data in order to generate first processed image data; and a supplying unit, wherein the first processing unit includes: a calculating unit that calculates an index value relating an edge-intensity about a target pixel in object image data; and a correcting unit that corrects a value of the target pixel based on the index value of the edge-intensity, wherein the correcting unit corrects the value of the target pixel such that print-density of the target pixel increase if the target pixel is a first pixel, and wherein the correcting unit corrects the value of the target pixel such that print-density of the target pixel decrease if the target pixel is a second pixel.
摘要翻译：图像处理装置使打印执行部使用彩色材料进行打印处理，图像处理装置包括：第一处理单元，其通过处理原始图像数据进行第一图像处理，以生成第一处理图像数据; 以及供给单元，其中，所述第一处理单元包括：计算单元，计算与对象图像数据中的关于目标像素的边缘强度相关的指标值; 以及校正单元，其基于所述边缘强度的所述指标值来校正所述目标像素的值，其中，所述校正单元校正所述目标像素的值，使得所述目标像素的打印浓度增加，如果所述目标像素为第一像素，并且其中，所述校正单元校正所述目标像素的值，使得如果所述目标像素是第二像素，则所述目标像素的打印浓度降低。

10. 发明授权

US08595944B2 Engine-driven cutter 有权
公开(公告)号：US08595944B2
公开(公告)日：2013-12-03
申请号：US13033956
申请日：2011-02-24
申请人： Masayoshi Okumi , Masaki Kondo , Tomonobu Nashimoto , Katsumi Tozawa
发明人： Masayoshi Okumi , Masaki Kondo , Tomonobu Nashimoto , Katsumi Tozawa
IPC分类号： B23D45/16 , B23Q11/06
摘要： A handheld engine-driven cutter is provided with a disk blade and an engine that drives the disk blade, a filter through which air provided to the four-stroke engine passes, a carburetor that mixes fuel and the air that passed through the filter, a casing that houses the filter and the carburetor, at least one operation member that is operated by a user and connected to the carburetor via a link, and a shaft that is connected to the casing and supports the operation member in a swingable manner. A shaft receiving groove that supports the shaft is formed in the casing.

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