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1. 发明授权

US08598047B2 Substrate processing apparatus and producing method of semiconductor device 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US08598047B2
公开(公告)日：2013-12-03
申请号：US13270811
申请日：2011-10-11
申请人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
发明人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
IPC分类号： H01L21/31
CPC分类号： H01L21/3162 , C23C16/403 , C23C16/45546 , C23C16/4557 , C23C16/45578 , C23C16/46 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/67109
摘要： A substrate treatment apparatus includes a reaction tube and a heater heating a silicon wafer. Trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tubeto generate Al2O3 film on the surface of the wafer. The apparatus also includes supply tubes and for flowing the ozone and TMA and a nozzle supplying gas into the reaction tube. The two supply tubes are connected to the nozzle disposed inside the heater in a zone inside the reaction tube where a temperature is lower than a temperature near the wafer, and the ozone and TMA are supplied into the reaction tube through the nozzle.
摘要翻译：基板处理装置包括反应管和加热硅晶片的加热器。将三甲基铝（TMA）和臭氧（O3）交替地进料到反应管中，以在晶片的表面上产生Al 2 O 3膜。该设备还包括供应管和用于使臭氧和TMA流动的喷嘴和向反应管供应气体的喷嘴。两个供应管连接到设置在加热器内部的喷嘴内的温度低于晶片温度的反应管内的区域，臭氧和TMA通过喷嘴供应到反应管中。

2. 发明申请

US20060258174A1 Substrate treatment apparatus and method of manufacturing semiconductor device 审中-公开
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20060258174A1
公开(公告)日：2006-11-16
申请号：US10549698
申请日：2004-07-09
申请人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
发明人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： H01L21/3162 , C23C16/403 , C23C16/45546 , C23C16/4557 , C23C16/45578 , C23C16/46 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/67109
摘要： A substrate treatment apparatus, comprising a reaction tube (203) and a heater (207) heating a silicon wafer (200), wherein trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tube (203) to generate Al2O3 film on the surface of the wafer (200). The apparatus also comprises supply tubes (232a) and (232b) for flowing the ozone and TMA and a nozzle (233) supplying gas into the reaction tube (203). The two supply tubes (232a) and (232b) are connected to the nozzle (233) disposed inside the heater (207) in a zone inside the reaction tube (203) where a temperature is lower than a temperature near the wafer (200) and the ozone and TMA are supplied into the reaction tube (203) through the nozzle (233).
摘要翻译：一种基板处理装置，包括反应管（203）和加热硅晶片（200）的加热器（207），其中三甲基铝（TMA）和臭氧（O 3 3）交替地供给到反应管（203）以在晶片（200）的表面上产生Al 2 O 3 N 3膜。该设备还包括用于使臭氧和TMA流动的供应管（232a）和（232b）和向反应管（203）供应气体的喷嘴（233）。两个供应管（232a）和（232b）连接到设置在加热器（207）内部的喷嘴（233）内，反应管（203）内的温度低于晶片附近的温度 200），并且臭氧和TMA通过喷嘴（233）供应到反应管（203）中。

3. 发明申请

US20120034788A1 SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及半导体器件的制造方法
公开(公告)号：US20120034788A1
公开(公告)日：2012-02-09
申请号：US13270811
申请日：2011-10-11
申请人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
发明人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
IPC分类号： H01L21/31
CPC分类号： H01L21/3162 , C23C16/403 , C23C16/45546 , C23C16/4557 , C23C16/45578 , C23C16/46 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/67109
摘要： A substrate treatment apparatus includes a reaction tube and a heater heating a silicon wafer. Trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tubeto generate Al2O3 film on the surface of the wafer. The apparatus also includes supply tubes and for flowing the ozone and TMA and a nozzle supplying gas into the reaction tube. The two supply tubes are connected to the nozzle disposed inside the heater in a zone inside the reaction tube where a temperature is lower than a temperature near the wafer, and the ozone and TMA are supplied into the reaction tube through the nozzle.
摘要翻译：基板处理装置包括反应管和加热硅晶片的加热器。将三甲基铝（TMA）和臭氧（O3）交替地进料到反应管中，以在晶片的表面上产生Al 2 O 3膜。该设备还包括供应管和用于使臭氧和TMA流动的喷嘴和向反应管供应气体的喷嘴。两个供应管连接到设置在加热器内部的喷嘴内的温度低于晶片温度的反应管内的区域，臭氧和TMA通过喷嘴供应到反应管中。

4. 发明授权

US08461062B2 Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08461062B2
公开(公告)日：2013-06-11
申请号：US13331258
申请日：2011-12-20
申请人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4584 , C23C16/405 , C23C16/4412 , C23C16/45546 , C23C16/45591
摘要： The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.
摘要翻译：基板处理装置包括：处理室，用于以水平姿态存储和处理以多级堆叠的基板; 至少一个处理气体供给喷嘴，其沿着所述处理室的内壁在所述基板的层叠方向上延伸，并且将处理气体供给到所述处理室的内部; 一对非活性气体供给喷嘴，沿着基板的堆叠方向沿着处理室的内壁延伸，并且沿着该基板的圆周方向从其两侧夹着处理气体供给喷嘴并且将惰性气体供应到处理室的内部; 以及用于排出处理室内部的排气管线。

5. 发明申请

US20090223448A1 Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20090223448A1
公开(公告)日：2009-09-10
申请号：US12379420
申请日：2009-02-20
申请人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： B05C9/06
CPC分类号： C23C16/4584 , C23C16/405 , C23C16/4412 , C23C16/45546 , C23C16/45591
摘要： A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.
摘要翻译：本发明的基板处理装置包括：处理室，用于以水平姿态多层堆放和处理基板; 处理气体供应单元，用于将两种或多种类型的处理气体供应到处理室的内部; 用于向处理室的内部供应惰性气体的非活性气体供应单元; 以及用于排出处理室内部的气氛的排气单元，其中处理气体供应单元具有至少两个处理气体供应喷嘴，该处理气体供应喷嘴沿着基板的堆叠方向沿着处理室的内壁延伸并且供应处理室内部的处理气体和非活性气体供给单元具有一对非活性气体供给喷嘴，其设置成沿着基板的堆叠方向沿着处理室的内壁延伸，因此从而沿着基板的圆周方向从其两侧夹着至少两个处理气体供给喷嘴的至少一个处理气体供给喷嘴，并将惰性气体供给到处理室的内部。

6. 发明授权

US08481434B2 Method of manufacturing a semiconductor device and processing apparatus 有权
公开(公告)号：US08481434B2
公开(公告)日：2013-07-09
申请号：US12216596
申请日：2008-07-08
申请人： Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
发明人： Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/4405 , H01L21/3141 , H01L21/31645
摘要： To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.

7. 发明申请

US20100186774A1 CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：清洁方法和基板处理装置
公开(公告)号：US20100186774A1
公开(公告)日：2010-07-29
申请号：US12671189
申请日：2008-09-09
申请人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda , Takashi Tanioka
发明人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda , Takashi Tanioka
IPC分类号： B08B9/00 , H01L21/469
CPC分类号： C23C16/4405 , B08B7/0035 , H01L21/67109 , H01L21/67757 , H01L21/67769
摘要： Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%.
摘要翻译：提供了一种清洁方法，用于通过提供用于成膜的材料气体来除去附着在用于在基板上形成期望的膜的基板处理装置的处理室内的膜。该方法具有向处理室供给含卤素气体的步骤，以及在开始供应含卤素气体之后，在供应含卤素气体的同时向处理室供应含氟气体的步骤。在供给含氟气体的步骤中，含卤素气体与供给到处理室的全部气体的供给流量比在20〜25％的范围内。

8. 发明授权

US07662727B2 Method for manufacturing semiconductor device background 有权
标题翻译：制造半导体器件背景的方法
公开(公告)号：US07662727B2
公开(公告)日：2010-02-16
申请号：US11979707
申请日：2007-11-07
申请人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
发明人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31645 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/31641
摘要： To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
摘要翻译：在通过将原料和醇交替地流动到处理室来形成薄膜的方法中，为了提高台阶覆盖率和装载效果，不会引起生产量的恶化和成本的增加。该方法包括：将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环，首先清洗，供给原料和第二次清洗，并通过重复该循环规定次数，在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。

9. 发明申请

US20080166886A1 Substrate processing apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20080166886A1
公开(公告)日：2008-07-10
申请号：US11902035
申请日：2007-09-18
申请人： Masanori Sakai , Norikazu Mizuno , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Norikazu Mizuno , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/45578 , C23C16/45546 , C23C16/45548 , C23C16/54 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/31645
摘要： There is provided a substrate processing apparatus, comprising: a processing chamber that houses a plurality of substrates in a state of being stacked; a heating member that heats the substrate and an atmosphere in the processing chamber; a first gas supply member that supplies a source gas that thermally-decomposes; a second gas supply member that supplies oxidative gas; an exhaust member that exhausts the atmosphere in the processing chamber; and a controller that controls at least the first gas supply member, the second gas supply member, and the exhaust member. The first gas supply member further includes at least one inlet opening that introduces the source gas into the processing chamber; the first inlet opening opens so as to avoid the side of the substrate; the second gas supply member further includes at least one second inlet opening that introduces the oxidative gas into the processing chamber; the second inlet opening opens to the side of the substrate; and the controller controls the first and second gas supply members and the exhaust member, so that the source gas and the oxidative gas are alternately supplied and exhausted to the processing chamber, to form a desired film on the substrate.
摘要翻译：提供了一种基板处理装置，包括：处理室，其以堆叠的状态容纳多个基板; 加热构件，其加热所述基板和所述处理室中的气氛; 提供热分解的源气体的第一气体供给构件; 供给氧化气体的第二气体供给部件; 排气构件，其排出处理室中的气氛; 以及至少控制第一气体供给构件，第二气体供给构件和排气构件的控制器。第一供气构件还包括将源气体引入处理室的至少一个入口; 第一入口开口打开以避免衬底的侧面; 第二气体供给构件还包括将氧化气体引入处理室的至少一个第二入口; 第二入口开口通向基板的侧面; 并且控制器控制第一和第二气体供给构件和排气构件，使得源气体和氧化气体被交替地供给并排出到处理室，以在基板上形成期望的膜。

10. 发明申请

US20080132084A1 Method for manufacturing semiconductor device background 有权
标题翻译：制造半导体器件背景的方法
公开(公告)号：US20080132084A1
公开(公告)日：2008-06-05
申请号：US11979707
申请日：2007-11-07
申请人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
发明人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/316 , B05C11/00
CPC分类号： H01L21/31645 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/31641
摘要： To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
摘要翻译：在通过将原料和醇交替地流动到处理室来形成薄膜的方法中，为了提高台阶覆盖率和装载效果，不会引起生产量的恶化和成本的增加。该方法包括：将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环，首先清洗，供给原料和第二次清洗，并通过重复该循环规定次数，在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。

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