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1. 发明授权

US07662727B2 Method for manufacturing semiconductor device background 有权
标题翻译：制造半导体器件背景的方法
公开(公告)号：US07662727B2
公开(公告)日：2010-02-16
申请号：US11979707
申请日：2007-11-07
申请人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
发明人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31645 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/31641
摘要： To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
摘要翻译：在通过将原料和醇交替地流动到处理室来形成薄膜的方法中，为了提高台阶覆盖率和装载效果，不会引起生产量的恶化和成本的增加。该方法包括：将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环，首先清洗，供给原料和第二次清洗，并通过重复该循环规定次数，在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。

2. 发明申请

US20080132084A1 Method for manufacturing semiconductor device background 有权
标题翻译：制造半导体器件背景的方法
公开(公告)号：US20080132084A1
公开(公告)日：2008-06-05
申请号：US11979707
申请日：2007-11-07
申请人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
发明人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/316 , B05C11/00
CPC分类号： H01L21/31645 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/31641
摘要： To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
摘要翻译：在通过将原料和醇交替地流动到处理室来形成薄膜的方法中，为了提高台阶覆盖率和装载效果，不会引起生产量的恶化和成本的增加。该方法包括：将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环，首先清洗，供给原料和第二次清洗，并通过重复该循环规定次数，在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。

3. 发明申请

US20080166886A1 Substrate processing apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20080166886A1
公开(公告)日：2008-07-10
申请号：US11902035
申请日：2007-09-18
申请人： Masanori Sakai , Norikazu Mizuno , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Norikazu Mizuno , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/45578 , C23C16/45546 , C23C16/45548 , C23C16/54 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/31645
摘要： There is provided a substrate processing apparatus, comprising: a processing chamber that houses a plurality of substrates in a state of being stacked; a heating member that heats the substrate and an atmosphere in the processing chamber; a first gas supply member that supplies a source gas that thermally-decomposes; a second gas supply member that supplies oxidative gas; an exhaust member that exhausts the atmosphere in the processing chamber; and a controller that controls at least the first gas supply member, the second gas supply member, and the exhaust member. The first gas supply member further includes at least one inlet opening that introduces the source gas into the processing chamber; the first inlet opening opens so as to avoid the side of the substrate; the second gas supply member further includes at least one second inlet opening that introduces the oxidative gas into the processing chamber; the second inlet opening opens to the side of the substrate; and the controller controls the first and second gas supply members and the exhaust member, so that the source gas and the oxidative gas are alternately supplied and exhausted to the processing chamber, to form a desired film on the substrate.
摘要翻译：提供了一种基板处理装置，包括：处理室，其以堆叠的状态容纳多个基板; 加热构件，其加热所述基板和所述处理室中的气氛; 提供热分解的源气体的第一气体供给构件; 供给氧化气体的第二气体供给部件; 排气构件，其排出处理室中的气氛; 以及至少控制第一气体供给构件，第二气体供给构件和排气构件的控制器。第一供气构件还包括将源气体引入处理室的至少一个入口; 第一入口开口打开以避免衬底的侧面; 第二气体供给构件还包括将氧化气体引入处理室的至少一个第二入口; 第二入口开口通向基板的侧面; 并且控制器控制第一和第二气体供给构件和排气构件，使得源气体和氧化气体被交替地供给并排出到处理室，以在基板上形成期望的膜。

4. 发明授权

US08105957B2 Method of producing semiconductor device 有权
公开(公告)号：US08105957B2
公开(公告)日：2012-01-31
申请号：US12415821
申请日：2009-03-31
申请人： Hironobu Miya , Kazuyuki Toyoda , Taketoshi Sato , Masayuki Asai , Norikazu Mizuno , Masanori Sakai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Taketoshi Sato , Masayuki Asai , Norikazu Mizuno , Masanori Sakai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/469
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

5. 发明授权

US07779785B2 Production method for semiconductor device and substrate processing apparatus 有权
标题翻译：半导体装置及基板处理装置的制造方法
公开(公告)号：US07779785B2
公开(公告)日：2010-08-24
申请号：US11666360
申请日：2006-02-15
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： C23C16/00
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
摘要翻译：本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序，第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步，去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为反应位点，其中第一至第五步骤重复预定时间。

6. 发明申请

US20090280652A1 PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：半导体器件和衬底加工设备的生产方法
公开(公告)号：US20090280652A1
公开(公告)日：2009-11-12
申请号：US12415821
申请日：2009-03-31
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/31
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
摘要翻译：本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序，第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步，去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为反应位点，其中第一至第五步骤重复预定时间。

7. 发明申请

US20080166882A1 Substrate Processing Apparatus and Producing Method of Semiconductor Device 有权
标题翻译：半导体器件的基板处理装置及其制造方法
公开(公告)号：US20080166882A1
公开(公告)日：2008-07-10
申请号：US11664726
申请日：2005-10-05
申请人： Hironobu Miya , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
发明人： Hironobu Miya , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： C23C16/45536 , C23C16/345 , C23C16/452 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3185 , H01L21/67017 , H01L21/67109
摘要： A substrate treating apparatus is provided with a treatment chamber, a holding member, a heating member, and supplying members for alternately supplying the treatment chamber with first and second reacting substances. The apparatus is provided for forming a thin film on a substrate by supplying the first reacting substance to have the first reacting substance adsorbed on the substrate, removing the excess first reacting substance, then, supplying the second reacting substance to have it adsorbed on the substrate, and reacting it with the first reacting substance. The apparatus is provided with a control part for permitting the apparatus to perform the thin film forming treatment in a status where the number of product substrates lacks, in the case where the number of sheets of the product substrates held by the holding member is less than the maximum number of the product substrates that can be held by the holding member.
摘要翻译：基板处理装置设置有处理室，保持构件，加热构件和用于向处理室交替地供给第一和第二反应物质的供给构件。该装置用于通过供给第一反应物质使第一反应物质吸附在基板上，除去过量的第一反应物质，然后供给第二反应物质使其吸附在基板上而在基板上形成薄膜并使其与第一反应物质反应。该设备设置有控制部件，用于允许设备在产品基板的数量不足的状态下进行薄膜形成处理，在由保持部件保持的产品基板的张数少于可由保持构件保持的产品基板的最大数量。

8. 发明申请

US20120034790A9 METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20120034790A9
公开(公告)日：2012-02-09
申请号：US12415821
申请日：2009-03-31
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/31
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

9. 发明授权

US08039404B2 Production method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08039404B2
公开(公告)日：2011-10-18
申请号：US12788697
申请日：2010-05-27
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/469
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.
摘要翻译：一种半导体器件的制造方法，包括：第一步骤，将第一反应材料供给到容纳在处理室中的基板上以进行配体取代反应，所述配体作为存在于所述基板的表面上的反应位点和所述配体的配体第一反应材料，从处理室除去过量的第一反应材料的第二步骤，向基板供给第二反应材料以使经取代第一步的配体经受相对于反应的配体取代反应的第三步骤从处理室中除去过量的第二反应物质的第四步骤，以及将由等离子体激发的第三反应物质供给到基板上的第五步骤，以使受体没有相对于反应位点进行取代反应的配体在第三步中，涉及相对于反应位点的配体取代反应，其中步骤1-5是重复的施加指定次数，直到在基板表面上形成所需厚度的膜。

10. 发明申请

US20100087069A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20100087069A1
公开(公告)日：2010-04-08
申请号：US12571688
申请日：2009-10-01
申请人： Hironobu MIYA , Kazuyuki Toyoda , Masanori Sakai , Norikazu Mizuno , Tsutomu Kato , Yuji Takebayashi , Kenji Ono , Atsushi Morikawa , Satoshi Okada
发明人： Hironobu MIYA , Kazuyuki Toyoda , Masanori Sakai , Norikazu Mizuno , Tsutomu Kato , Yuji Takebayashi , Kenji Ono , Atsushi Morikawa , Satoshi Okada
IPC分类号： H01L21/316 , C23C16/46 , C23C16/513
CPC分类号： C23C16/405 , C23C16/483 , H01L21/02164 , H01L21/02181 , H01L21/02189 , H01L21/02277 , H01L21/0228 , H01L21/3141 , H01L21/31608 , H01L21/31641 , H01L21/31645
摘要： The coverage characteristics or loading effect of an oxide film can be improved without having to increase the supply amount or time of an oxidant. There is provided method of manufacturing a semiconductor device. The method comprises loading at least one substrate to a processing chamber; forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and irradiating ultraviolet light to the second reaction material.
摘要翻译：可以提高氧化膜的覆盖特性或负载效果，而不必增加氧化剂的供给量或时间。提供了制造半导体器件的方法。该方法包括将至少一个衬底装载到处理室; 通过在加热所述基板的同时向所述处理室交替地供给第一反应材料和含有氧原子的第二反应材料，在所述基板上形成氧化膜; 以及从所述处理室中卸载所述基板，其中，通过将所述基板保持在所述第一反应材料的自身分解温度以下并且向所述第二反应材料照射紫外线的温度进行氧化膜的形成。

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