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1. 发明申请

US20100186774A1 CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：清洁方法和基板处理装置
公开(公告)号：US20100186774A1
公开(公告)日：2010-07-29
申请号：US12671189
申请日：2008-09-09
申请人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda , Takashi Tanioka
发明人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda , Takashi Tanioka
IPC分类号： B08B9/00 , H01L21/469
CPC分类号： C23C16/4405 , B08B7/0035 , H01L21/67109 , H01L21/67757 , H01L21/67769
摘要： Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%.
摘要翻译：提供了一种清洁方法，用于通过提供用于成膜的材料气体来除去附着在用于在基板上形成期望的膜的基板处理装置的处理室内的膜。该方法具有向处理室供给含卤素气体的步骤，以及在开始供应含卤素气体之后，在供应含卤素气体的同时向处理室供应含氟气体的步骤。在供给含氟气体的步骤中，含卤素气体与供给到处理室的全部气体的供给流量比在20〜25％的范围内。

2. 发明申请

US20090071505A1 CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：清洁方法和基板处理装置
公开(公告)号：US20090071505A1
公开(公告)日：2009-03-19
申请号：US12188440
申请日：2008-08-08
申请人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda
发明人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda
IPC分类号： B08B7/00 , C23C16/00
CPC分类号： C23C16/4405 , B08B7/0035
摘要： Provided is a cleaning method which can efficiently remove a film, such as a high dielectric constant oxide film, which is difficult to be etched by a fluorine-containing gas alone. As a cleaning method of a substrate processing apparatus which forms a desired film on a wafer by supplying a source gas, there is provided a cleaning method for removing a film attached to the inside of a processing chamber. The cleaning method includes: a step of supplying a halogen-containing gas into the processing chamber; and a step of supplying a fluorine-containing gas into the processing chamber, after starting the supply of the halogen-containing gas, wherein, in the step of supplying the fluorine-containing gas, the fluorine-containing gas is supplied while supplying the halogen-containing gas into the processing chamber.
摘要翻译：本发明提供一种能够有效地除去难以仅通过含氟气体进行蚀刻的高介电常数氧化膜等的膜的清洗方法。作为通过供给源气体在晶片上形成期望的膜的基板处理装置的清洗方法，提供了一种用于除去附着在处理室内部的膜的清洗方法。清洗方法包括：向处理室供给含卤素气体的步骤; 以及在开始供给含卤素气体之后向处理室供给含氟气体的步骤，其中在供给含氟气体的步骤中，供应含氟气体，同时供给卤素的气体进入处理室。

3. 发明授权

US08481434B2 Method of manufacturing a semiconductor device and processing apparatus 有权
公开(公告)号：US08481434B2
公开(公告)日：2013-07-09
申请号：US12216596
申请日：2008-07-08
申请人： Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
发明人： Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/4405 , H01L21/3141 , H01L21/31645
摘要： To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.

4. 发明申请

US20090130860A1 Method of manufacturing a semiconductor device and processing apparatus 有权
标题翻译：制造半导体器件和处理装置的方法
公开(公告)号：US20090130860A1
公开(公告)日：2009-05-21
申请号：US12216596
申请日：2008-07-08
申请人： Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
发明人： Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/4405 , H01L21/3141 , H01L21/31645
摘要： To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.
摘要翻译：为了除去沉积在处理室内部的高介电常数膜的沉积物，通过使用仅通过加热活化的清洗气体。该方法包括以下步骤：将衬底或多个衬底装载到处理室中; 进行处理，通过向处理室供给处理气体，将高介电常数膜沉积在基板上; 从处理室的内部卸载经处理的基板; 以及通过向所述处理室中供给卤化物气体和氧气基气体来清洁所述处理室的内部，以及去除包括沉积在所述处理室内部的所述高介电常数膜的沉积物，以及在所述处理室的内部清洁步骤处理室中的卤化物气体和氧气基气体中的氧基气体的浓度设定为小于7％。

5. 发明授权

US07662727B2 Method for manufacturing semiconductor device background 有权
标题翻译：制造半导体器件背景的方法
公开(公告)号：US07662727B2
公开(公告)日：2010-02-16
申请号：US11979707
申请日：2007-11-07
申请人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
发明人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31645 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/31641
摘要： To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
摘要翻译：在通过将原料和醇交替地流动到处理室来形成薄膜的方法中，为了提高台阶覆盖率和装载效果，不会引起生产量的恶化和成本的增加。该方法包括：将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环，首先清洗，供给原料和第二次清洗，并通过重复该循环规定次数，在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。

6. 发明申请

US20080132084A1 Method for manufacturing semiconductor device background 有权
标题翻译：制造半导体器件背景的方法
公开(公告)号：US20080132084A1
公开(公告)日：2008-06-05
申请号：US11979707
申请日：2007-11-07
申请人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
发明人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/316 , B05C11/00
CPC分类号： H01L21/31645 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/31641
摘要： To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
摘要翻译：在通过将原料和醇交替地流动到处理室来形成薄膜的方法中，为了提高台阶覆盖率和装载效果，不会引起生产量的恶化和成本的增加。该方法包括：将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环，首先清洗，供给原料和第二次清洗，并通过重复该循环规定次数，在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。

7. 发明授权

US08506714B2 Substrate processing system 有权
标题翻译：基板加工系统
公开(公告)号：US08506714B2
公开(公告)日：2013-08-13
申请号：US11990499
申请日：2007-01-24
申请人： Tomoki Horita , Kazuhiro Hirahara , Hironobu Miya , Atsuhiko Suda , Hirohisa Yamazaki
发明人： Tomoki Horita , Kazuhiro Hirahara , Hironobu Miya , Atsuhiko Suda , Hirohisa Yamazaki
IPC分类号： C23C16/455 , C23C16/453 , C23C16/52 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4407 , C23C16/4481 , C23C16/455
摘要： Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product.
摘要翻译：公开了一种基板处理系统，包括：处理基板; 用于蒸发液体材料的蒸发单元; 用于向所述处理室供应由所述蒸发单元蒸发的材料的气体的供应系统; 用于排出处理室中的气氛的排气系统; 以及清洗液体供给系统，用于向蒸发单元提供清洁液体，用于清洗沉积在蒸发单元中的产物，其中清洗液供应系统将至少两种清洗液体供应到蒸发单元中，从而可以将产品从蒸发单元通过两种清洁液体在产品上的作用。

8. 发明申请

US20090035951A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20090035951A1
公开(公告)日：2009-02-05
申请号：US12171756
申请日：2008-07-11
申请人： Hironobu Miya , Masanori Sakai , Norikazu Mizuno , Tsutomu Kato , Yuji Takebayashi
发明人： Hironobu Miya , Masanori Sakai , Norikazu Mizuno , Tsutomu Kato , Yuji Takebayashi
IPC分类号： H01L21/31
CPC分类号： H01L21/31645 , C23C16/405 , C23C16/45527 , C23C16/4557 , H01L21/02181 , H01L21/3141
摘要： Provided is a manufacturing method of a semiconductor device composed of a step of carrying-in a wafer into a processing chamber; a step of forming an HfO2 film on the wafer by alternately supplying TEMAH and O3, under heating, into the processing chamber; and a step of carrying-out the wafer from the inside of the processing chamber, wherein in the step of forming the HfO2 film, heating temperature of TEMAH and heating temperature of O3 are set to be different.
摘要翻译：提供一种半导体器件的制造方法，该半导体器件由将晶片引入处理室的步骤构成; 通过在加热室内交替供给TEMAH和O3，在晶片上形成HfO 2膜的步骤; 以及从处理室的内部进行晶片的步骤，其中在形成HfO 2膜的步骤中，将TEMAH的加热温度和O 3的加热温度设定为不同。

9. 发明申请

US20090053906A1 Semiconductor Device Producing Method and Substrate Processing Apparatus 有权
标题翻译：半导体器件生产方法和基板处理设备
公开(公告)号：US20090053906A1
公开(公告)日：2009-02-26
申请号：US12087779
申请日：2007-07-19
申请人： Hironobu Miya , Kazuhiro Hirahara , Yoshitaka Hamada , Atsuhiko Suda
发明人： Hironobu Miya , Kazuhiro Hirahara , Yoshitaka Hamada , Atsuhiko Suda
IPC分类号： H01L21/316 , B05C11/00
CPC分类号： H01L21/3141 , C23C16/40 , C23C16/45527 , C23C16/45546 , H01L21/02164 , H01L21/02181 , H01L21/02274 , H01L21/0228 , H01L21/31612 , H01L21/31645
摘要： Disclosed is a producing method of a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.
摘要翻译：公开了一种半导体器件的制造方法，包括：将至少一个衬底装载到处理室中; 通过重复地供给作为第一材料的金属化合物或硅化合物，作为包含氧原子的第二材料的氧化物材料，在基板的表面上形成金属氧化物膜或氧化硅膜，作为第三材料的氢化物材料预定时间进入处理室; 并从处理室卸载基板。

10. 发明授权

US07981815B2 Semiconductor device producing method and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法和基板处理装置
公开(公告)号：US07981815B2
公开(公告)日：2011-07-19
申请号：US12087779
申请日：2007-07-19
申请人： Hironobu Miya , Kazuhiro Hirahara , Yoshitaka Hamada , Atsuhiko Suda
发明人： Hironobu Miya , Kazuhiro Hirahara , Yoshitaka Hamada , Atsuhiko Suda
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/40 , C23C16/45527 , C23C16/45546 , H01L21/02164 , H01L21/02181 , H01L21/02274 , H01L21/0228 , H01L21/31612 , H01L21/31645
摘要： Disclosed is a producing method or a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.
摘要翻译：公开了一种制造方法或半导体装置，其包括：将至少一个基板装载到处理室中; 通过重复地供给作为第一材料的金属化合物或硅化合物，作为包含氧原子的第二材料的氧化物材料，在基板的表面上形成金属氧化物膜或氧化硅膜，作为第三材料的氢化物材料预定时间进入处理室; 并从处理室卸载基板。

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