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1. 发明授权

US07662727B2 Method for manufacturing semiconductor device background 有权
标题翻译：制造半导体器件背景的方法
公开(公告)号：US07662727B2
公开(公告)日：2010-02-16
申请号：US11979707
申请日：2007-11-07
申请人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
发明人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31645 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/31641
摘要： To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
摘要翻译：在通过将原料和醇交替地流动到处理室来形成薄膜的方法中，为了提高台阶覆盖率和装载效果，不会引起生产量的恶化和成本的增加。该方法包括：将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环，首先清洗，供给原料和第二次清洗，并通过重复该循环规定次数，在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。

2. 发明申请

US20080132084A1 Method for manufacturing semiconductor device background 有权
标题翻译：制造半导体器件背景的方法
公开(公告)号：US20080132084A1
公开(公告)日：2008-06-05
申请号：US11979707
申请日：2007-11-07
申请人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
发明人： Hironobu Miya , Norikazu Mizuno , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/316 , B05C11/00
CPC分类号： H01L21/31645 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/31641
摘要： To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
摘要翻译：在通过将原料和醇交替地流动到处理室来形成薄膜的方法中，为了提高台阶覆盖率和装载效果，不会引起生产量的恶化和成本的增加。该方法包括：将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环，首先清洗，供给原料和第二次清洗，并通过重复该循环规定次数，在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。

3. 发明申请

US20100186774A1 CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：清洁方法和基板处理装置
公开(公告)号：US20100186774A1
公开(公告)日：2010-07-29
申请号：US12671189
申请日：2008-09-09
申请人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda , Takashi Tanioka
发明人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda , Takashi Tanioka
IPC分类号： B08B9/00 , H01L21/469
CPC分类号： C23C16/4405 , B08B7/0035 , H01L21/67109 , H01L21/67757 , H01L21/67769
摘要： Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%.
摘要翻译：提供了一种清洁方法，用于通过提供用于成膜的材料气体来除去附着在用于在基板上形成期望的膜的基板处理装置的处理室内的膜。该方法具有向处理室供给含卤素气体的步骤，以及在开始供应含卤素气体之后，在供应含卤素气体的同时向处理室供应含氟气体的步骤。在供给含氟气体的步骤中，含卤素气体与供给到处理室的全部气体的供给流量比在20〜25％的范围内。

4. 发明申请

US20090071505A1 CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：清洁方法和基板处理装置
公开(公告)号：US20090071505A1
公开(公告)日：2009-03-19
申请号：US12188440
申请日：2008-08-08
申请人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda
发明人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda
IPC分类号： B08B7/00 , C23C16/00
CPC分类号： C23C16/4405 , B08B7/0035
摘要： Provided is a cleaning method which can efficiently remove a film, such as a high dielectric constant oxide film, which is difficult to be etched by a fluorine-containing gas alone. As a cleaning method of a substrate processing apparatus which forms a desired film on a wafer by supplying a source gas, there is provided a cleaning method for removing a film attached to the inside of a processing chamber. The cleaning method includes: a step of supplying a halogen-containing gas into the processing chamber; and a step of supplying a fluorine-containing gas into the processing chamber, after starting the supply of the halogen-containing gas, wherein, in the step of supplying the fluorine-containing gas, the fluorine-containing gas is supplied while supplying the halogen-containing gas into the processing chamber.
摘要翻译：本发明提供一种能够有效地除去难以仅通过含氟气体进行蚀刻的高介电常数氧化膜等的膜的清洗方法。作为通过供给源气体在晶片上形成期望的膜的基板处理装置的清洗方法，提供了一种用于除去附着在处理室内部的膜的清洗方法。清洗方法包括：向处理室供给含卤素气体的步骤; 以及在开始供给含卤素气体之后向处理室供给含氟气体的步骤，其中在供给含氟气体的步骤中，供应含氟气体，同时供给卤素的气体进入处理室。

5. 发明申请

US20080166886A1 Substrate processing apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20080166886A1
公开(公告)日：2008-07-10
申请号：US11902035
申请日：2007-09-18
申请人： Masanori Sakai , Norikazu Mizuno , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Norikazu Mizuno , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/45578 , C23C16/45546 , C23C16/45548 , C23C16/54 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/31645
摘要： There is provided a substrate processing apparatus, comprising: a processing chamber that houses a plurality of substrates in a state of being stacked; a heating member that heats the substrate and an atmosphere in the processing chamber; a first gas supply member that supplies a source gas that thermally-decomposes; a second gas supply member that supplies oxidative gas; an exhaust member that exhausts the atmosphere in the processing chamber; and a controller that controls at least the first gas supply member, the second gas supply member, and the exhaust member. The first gas supply member further includes at least one inlet opening that introduces the source gas into the processing chamber; the first inlet opening opens so as to avoid the side of the substrate; the second gas supply member further includes at least one second inlet opening that introduces the oxidative gas into the processing chamber; the second inlet opening opens to the side of the substrate; and the controller controls the first and second gas supply members and the exhaust member, so that the source gas and the oxidative gas are alternately supplied and exhausted to the processing chamber, to form a desired film on the substrate.
摘要翻译：提供了一种基板处理装置，包括：处理室，其以堆叠的状态容纳多个基板; 加热构件，其加热所述基板和所述处理室中的气氛; 提供热分解的源气体的第一气体供给构件; 供给氧化气体的第二气体供给部件; 排气构件，其排出处理室中的气氛; 以及至少控制第一气体供给构件，第二气体供给构件和排气构件的控制器。第一供气构件还包括将源气体引入处理室的至少一个入口; 第一入口开口打开以避免衬底的侧面; 第二气体供给构件还包括将氧化气体引入处理室的至少一个第二入口; 第二入口开口通向基板的侧面; 并且控制器控制第一和第二气体供给构件和排气构件，使得源气体和氧化气体被交替地供给并排出到处理室，以在基板上形成期望的膜。

6. 发明授权

US08227346B2 Method of producing semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08227346B2
公开(公告)日：2012-07-24
申请号：US13306654
申请日：2011-11-29
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/44
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
摘要翻译：本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序，第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步，去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为反应位点，其中第一至第五步骤重复预定时间。

7. 发明申请

US20120077350A1 METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：生产半导体器件的方法
公开(公告)号：US20120077350A1
公开(公告)日：2012-03-29
申请号：US13306654
申请日：2011-11-29
申请人： Hironobu MIYA , Kazuyuki TOYODA , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu MIYA , Kazuyuki TOYODA , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/31
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
摘要翻译：本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序，第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步，去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为反应位点，其中第一至第五步骤重复预定时间。

8. 发明申请

US20110045675A1 SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：基板加工装置及半导体器件的制造方法
公开(公告)号：US20110045675A1
公开(公告)日：2011-02-24
申请号：US12916920
申请日：2010-11-01
申请人： Hironobu MIYA , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
发明人： Hironobu MIYA , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
IPC分类号： H01L21/30 , C23C16/455
CPC分类号： C23C16/45536 , C23C16/345 , C23C16/452 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3185 , H01L21/67017 , H01L21/67109
摘要： Disclosed is a substrate processing apparatus, comprising a processing chamber, a holder to hold at least a plurality of product substrates, a heating member, a supplying member to alternately supply at least a first reactant and a second reactant, and a control unit, wherein the control unit executes forming thin films on the substrates by supplying the first reactant, removing a surplus of the first reactant after the first reactant has been adsorbed on the product substrates, subsequently supplying the second reactant, to cause the second reactant to react with the first reactant adsorbed on the substrates, and executes the forming the thin films in a state where a number of the product substrates is insufficient when a number of the product substrates is less than a maximum number of the product substrates which can be held by the holder.
摘要翻译：公开了一种基板处理装置，包括处理室，用于保持至少多个产品基板的保持器，加热构件，供应构件以交替地供应至少第一反应物和第二反应物，以及控制单元，其中所述控制单元通过供给所述第一反应物，在所述基板上形成薄膜，在所述第一反应物被吸附在所述产物基板上之后除去剩余的所述第一反应物，随后供给所述第二反应物，以使所述第二反应物与所述第二反应物反应第一反应物吸附在基板上，并且当产品基板的数量少于可由保持件保持的产品基板的最大数量时，在多个产品基板不足的状态下执行薄膜的形成。

9. 发明授权

US07892983B2 Substrate processing apparatus and producing method of semiconductor device 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US07892983B2
公开(公告)日：2011-02-22
申请号：US11664726
申请日：2005-10-05
申请人： Hironobu Miya , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
发明人： Hironobu Miya , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45536 , C23C16/345 , C23C16/452 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3185 , H01L21/67017 , H01L21/67109
摘要： Disclosed is a substrate processing apparatus, comprising a processing chamber, a holder to hold at least a plurality of product substrates, a heating member, a supplying member to alternately supply at least a first reactant and a second reactant, and a control unit, wherein the control unit executes forming thin films on the substrates by supplying the first reactant, removing a surplus of the first reactant after the first reactant has been adsorbed on the product substrates, subsequently supplying the second reactant, to cause the second reactant to react with the first reactant adsorbed on the substrates, and executes the forming the thin films in a state where a number of the product substrates is insufficient when a number of the product substrates is less than a maximum number of the product substrates which can be held by the holder.
摘要翻译：公开了一种基板处理装置，包括处理室，用于保持至少多个产品基板的保持器，加热构件，供应构件以交替地供应至少第一反应物和第二反应物，以及控制单元，其中所述控制单元通过供给所述第一反应物，在所述基板上形成薄膜，在所述第一反应物被吸附在所述产物基板上之后除去剩余的所述第一反应物，随后供给所述第二反应物，以使所述第二反应物与所述第二反应物反应第一反应物吸附在基板上，并且当产品基板的数量少于可由保持件保持的产品基板的最大数量时，在多个产品基板不足的状态下执行薄膜的形成。

10. 发明申请

US20100233887A1 PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：半导体器件和衬底加工设备的生产方法
公开(公告)号：US20100233887A1
公开(公告)日：2010-09-16
申请号：US12788697
申请日：2010-05-27
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/314 , H01L21/316 , H01L21/318
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.
摘要翻译：一种半导体器件的制造方法，包括：第一步骤，将第一反应材料供给到容纳在处理室中的基板上以进行配体取代反应，所述配体作为存在于所述基板的表面上的反应位点和所述配体的配体第一反应材料，从处理室除去过量的第一反应材料的第二步骤，向基板供给第二反应材料以使经取代第一步的配体经受相对于反应的配体取代反应的第三步骤从处理室中除去过量的第二反应物质的第四步骤，以及将由等离子体激发的第三反应物质供给到基板上的第五步骤，以使受体没有相对于反应位点进行取代反应的配体在第三步中，涉及相对于反应位点的配体取代反应，其中步骤1-5是重复的施加指定次数，直到在基板表面上形成所需厚度的膜。

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