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1. 发明授权

US08736830B2 Pattern inspection device of substrate surface and pattern inspection method of the same 有权
标题翻译：基板表面图案检查装置及图案检验方法相同
公开(公告)号：US08736830B2
公开(公告)日：2014-05-27
申请号：US13145968
申请日：2009-12-10
申请人： Masahiro Watanabe , Toshihiko Nakata , Yasuhiro Yoshitake , Hideaki Sasazawa , Minoru Yoshida
发明人： Masahiro Watanabe , Toshihiko Nakata , Yasuhiro Yoshitake , Hideaki Sasazawa , Minoru Yoshida
IPC分类号： G01N21/00
CPC分类号： G01Q60/22 , G01N21/95607 , G11B5/84
摘要： There is provided a pattern inspection device for a substrate surface which can inspect a substrate including a pattern whose size is equal to or smaller than light resolution limit at high speed. The pattern inspection device for the substrate surface includes: a near-field optical head 101 having a fine repetitive pattern; a θ driving unit 311 of scanning an inspected substrate 900 relatively to the near-field optical head 101; a space holding mechanism of holding a space between the near-field optical head 101 and the inspected substrate 900 constant; alight source 110 of irradiating light to the near-field optical head 101; a detection system 201 of detecting an intensity of scattered light generated by interaction between the fine repetitive pattern on the near-field optical head 101 and a fine pattern on a surface of the inspected substrate 900; and a signal processing unit 321 of inspecting the fine pattern on the inspected substrate 900 based on an output of the detection system 201.
摘要翻译：提供了一种用于基板表面的图案检查装置，其能够高速检查尺寸等于或小于光分辨率极限的图案的基板。用于基板表面的图案检查装置包括：具有精细重复图案的近场光学头101; a＆thetas; 驱动单元311，其相对于近场光学头101扫描被检查的基板900; 在近场光学头101和被检查基板900之间保持一定间隔的空间保持机构; 将光照射到近场光学头101的光源110; 检测系统201，用于检测由近场光学头101上的细重复图案与被检查基板900的表面上的微细图案之间的相互作用产生的散射光的强度; 以及基于检测系统201的输出来检查被检查基板900上的精细图案的信号处理单元321。

2. 发明申请

US20120013890A1 PATTERN INSPECTION DEVICE OF SUBSTRATE SURFACE AND PATTERN INSPECTION METHOD OF THE SAME 有权
标题翻译：基板表面图案检测装置及其图案检测方法
公开(公告)号：US20120013890A1
公开(公告)日：2012-01-19
申请号：US13145968
申请日：2009-12-10
申请人： Masahiro Watanabe , Toshihiko Nakata , Yasuhiro Yoshitake , Hideaki Sasazawa , Minoru Yoshida
发明人： Masahiro Watanabe , Toshihiko Nakata , Yasuhiro Yoshitake , Hideaki Sasazawa , Minoru Yoshida
IPC分类号： G01N21/956 , G01N21/47
CPC分类号： G01Q60/22 , G01N21/95607 , G11B5/84
摘要： There is provided a pattern inspection device for a substrate surface which can inspect a substrate including a pattern whose size is equal to or smaller than light resolution limit at high speed. The pattern inspection device for the substrate surface includes: a near-field optical head 101 having a fine repetitive pattern; a θ driving unit 311 of scanning an inspected substrate 900 relatively to the near-field optical head 101; a space holding mechanism of holding a space between the near-field optical head 101 and the inspected substrate 900 constant; alight source 110 of irradiating light to the near-field optical head 101; a detection system 201 of detecting an intensity of scattered light generated by interaction between the fine repetitive pattern on the near-field optical head 101 and a fine pattern on a surface of the inspected substrate 900; and a signal processing unit 321 of inspecting the fine pattern on the inspected substrate 900 based on an output of the detection system 201.
摘要翻译：提供了一种用于基板表面的图案检查装置，其能够高速检查尺寸等于或小于光分辨率极限的图案的基板。用于基板表面的图案检查装置包括：具有精细重复图案的近场光学头101; a＆thetas; 驱动单元311，其相对于近场光学头101扫描被检查的基板900; 在近场光学头101和被检查基板900之间保持一定间隔的空间保持机构; 将光照射到近场光学头101的光源110; 检测系统201，用于检测由近场光学头101上的细重复图案与被检查基板900的表面上的微细图案之间的相互作用产生的散射光的强度; 以及基于检测系统201的输出来检查被检查基板900上的精细图案的信号处理单元321。

3. 发明申请

US20100182589A1 SPECTRAL DETECTION METHOD AND DEVICE, AND DEFECT INSPECTION METHOD AND APPARATUS USING THE SAME 有权
标题翻译：光谱检测方法和装置，以及缺陷检查方法和使用其的装置
公开(公告)号：US20100182589A1
公开(公告)日：2010-07-22
申请号：US12626963
申请日：2009-11-30
申请人： Takenori HIROSE , Minoru Yoshida , Hideaki Sasazawa , Yasuhiro Yoshitake
发明人： Takenori HIROSE , Minoru Yoshida , Hideaki Sasazawa , Yasuhiro Yoshitake
IPC分类号： G01J3/08 , G01J3/00
CPC分类号： G01J3/02 , G01B2210/56 , G01J3/0208 , G01J3/021 , G01J3/0229 , G01N21/95607
摘要： In spectral detection for detecting the shape of repeating pattern structures uniformly formed on a surface of a test object, it is advantageous to use light having a wide wavelength range in a short wavelength region. However, it is not easy to realize a relatively simple optical system capable of spectral detection of light having a wide wavelength range in a short wavelength region, namely in ultraviolet region. The present invention provides an inspection apparatus for detecting pattern defects. The inspection apparatus includes a spectral detection optical system capable of spectral detection of light in a wavelength range from deep ultraviolet to near infrared. The spectral detection optical system includes a spatially partial mirror serving as a half mirror and a reflecting objective provided with an aperture stop for limiting the angle and direction of light to be applied to and reflected by a test object.
摘要翻译：在用于检测在测试对象的表面上均匀形成的重复图案结构的形状的光谱检测中，有利的是在短波长范围内使用宽波长范围的光。然而，实现能够在短波长区域即紫外线区域中具有宽波长范围的光的光谱检测的相对简单的光学系统是不容易的。本发明提供一种用于检测图案缺陷的检查装置。检查装置包括能够对从深紫外线到近红外线的波长范围内的光进行光谱检测的光谱检测光学系统。光谱检测光学系统包括用作半反射镜的空间部分反射镜和设置有孔径光阑的反射物镜，该孔径光阑用于限制被施加到测试对象并由被测物体反射的光的角度和方向。

4. 发明授权

US08279431B2 Spectral detection method and device, and defect inspection method and apparatus using the same 有权
标题翻译：光谱检测方法和装置，以及使用其的缺陷检查方法和装置
公开(公告)号：US08279431B2
公开(公告)日：2012-10-02
申请号：US12626963
申请日：2009-11-30
申请人： Takenori Hirose , Minoru Yoshida , Hideaki Sasazawa , Yasuhiro Yoshitake
发明人： Takenori Hirose , Minoru Yoshida , Hideaki Sasazawa , Yasuhiro Yoshitake
IPC分类号： G01N21/00
CPC分类号： G01J3/02 , G01B2210/56 , G01J3/0208 , G01J3/021 , G01J3/0229 , G01N21/95607
摘要： In spectral detection for detecting the shape of repeating pattern structures uniformly formed on a surface of a test object, it is advantageous to use light having a wide wavelength range in a short wavelength region. However, it is not easy to realize a relatively simple optical system capable of spectral detection of light having a wide wavelength range in a short wavelength region, namely in ultraviolet region. The present invention provides an inspection apparatus for detecting pattern defects. The inspection apparatus includes a spectral detection optical system capable of spectral detection of light in a wavelength range from deep ultraviolet to near infrared. The spectral detection optical system includes a spatially partial mirror serving as a half mirror and a reflecting objective provided with an aperture stop for limiting the angle and direction of light to be applied to and reflected by a test object.
摘要翻译：在用于检测在测试对象的表面上均匀形成的重复图案结构的形状的光谱检测中，有利的是在短波长范围内使用宽波长范围的光。然而，实现能够在短波长区域即紫外线区域中具有宽波长范围的光的光谱检测的相对简单的光学系统是不容易的。本发明提供一种用于检测图案缺陷的检查装置。检查装置包括能够对从深紫外线到近红外线的波长范围内的光进行光谱检测的光谱检测光学系统。光谱检测光学系统包括用作半反射镜的空间部分反射镜和设置有孔径光阑的反射物镜，该孔径光阑用于限制被施加到测试对象并由被测物体反射的光的角度和方向。

5. 发明授权

US06631547B2 Manufacturing method for thin film magnetic heads 失效
标题翻译：薄膜磁头制造方法
公开(公告)号：US06631547B2
公开(公告)日：2003-10-14
申请号：US09778776
申请日：2001-02-08
申请人： Minoru Yoshida , Hideaki Sasazawa , Toshihiko Nakata , Minoru Yamasaka
发明人： Minoru Yoshida , Hideaki Sasazawa , Toshihiko Nakata , Minoru Yamasaka
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3166 , G11B5/3173 , G11B2005/3996 , Y10T29/49004 , Y10T29/49025 , Y10T29/49032 , Y10T29/49036 , Y10T29/49048 , Y10T29/49131
摘要： To measure positions of a plurality of thin film magnetic head elements formed in a line on a bar, the quantity of positions of samples in the bar is estimated from the magnetic head elements the amount of deviation in position of the next element, and the distance between the elements are obtained, and the amount of deviation and distance are estimated by a primary approximate linear or several-order approximate curve. The estimated amount and the distance between the elements are moved simultaneously, and an image formed by a lens optical system is photo-converted to an image signal, and dimensions are computed. The conversion step is carried out immediately after movement of the next element and is continuously repeated, and the computing step is processed in parallel with the conversation step.
摘要翻译：为了测量形成在棒上的线中的多个薄膜磁头元件的位置，从磁头元件估计条中样品的位置数量，下一个元件的位置偏差量以及距离获得元素之间的距离，并且通过初级近似线性或几阶近似曲线来估计偏差量和距离。估计的量和元件之间的距离同时移动，并且由透镜光学系统形成的图像被光转换成图像信号，并且计算尺寸。转换步骤在下一个元素的移动之后立即执行并且被连续地重复，并且计算步骤与对话步骤并行处理。

6. 发明授权

US08359661B2 Magnetic device inspection apparatus and magnetic device inspection method 失效
标题翻译：磁性装置检查装置和磁性装置检查方法
公开(公告)号：US08359661B2
公开(公告)日：2013-01-22
申请号：US12649468
申请日：2009-12-30
申请人： Takehiro Tachizaki , Masahiro Watanabe , Hideaki Sasazawa , Minoru Yoshida , Tsuneo Nakagomi , Teruaki Tokutomi
发明人： Takehiro Tachizaki , Masahiro Watanabe , Hideaki Sasazawa , Minoru Yoshida , Tsuneo Nakagomi , Teruaki Tokutomi
IPC分类号： G01Q60/52
CPC分类号： G01Q60/54 , G01Q60/56 , G01Q70/12
摘要： Applying an alternating current to a magnetic head as a sample generates an alternate-current magnetic field from the sample. A cantilever includes a probe that is made of a magnetic material or is coated with a magnetic material. The cantilever is displaced when it approaches the sample. Detecting the displacement of the cantilever detects distribution of the magnetic field from the sample. It is possible to fast measure distribution of the magnetic field generated from the sample when a frequency of the alternating current applied to the sample differs from a resonance frequency of the cantilever.
摘要翻译：以交替电流作为样品施加磁头会产生来自样品的交流磁场。悬臂包括由磁性材料制成或涂覆有磁性材料的探针。悬臂在接近样品时被移位。检测悬臂的位移检测样品的磁场分布。当施加到样品的交流电流的频率与悬臂的共振频率不同时，可以快速测量从样品产生的磁场的分布。

7. 发明申请

US20100205699A1 MAGNETIC DEVICE INSPECTION APPARATUS AND MAGNETIC DEVICE INSPECTION METHOD 失效
标题翻译：磁性装置检查装置和磁性装置检查方法
公开(公告)号：US20100205699A1
公开(公告)日：2010-08-12
申请号：US12649468
申请日：2009-12-30
申请人： Takehiro TACHIZAKI , Masahiro Watanabe , Hideaki Sasazawa , Minoru Yoshida , Tsuneo Nakagomi , Teruaki Tokutomi
发明人： Takehiro TACHIZAKI , Masahiro Watanabe , Hideaki Sasazawa , Minoru Yoshida , Tsuneo Nakagomi , Teruaki Tokutomi
IPC分类号： G01Q60/52 , G01Q60/50
CPC分类号： G01Q60/54 , G01Q60/56 , G01Q70/12
摘要： Applying an alternating current to a magnetic head as a sample generates an alternate-current magnetic field from the sample. A cantilever includes a probe that is made of a magnetic material or is coated with a magnetic material. The cantilever is displaced when it approaches the sample. Detecting the displacement of the cantilever detects distribution of the magnetic field from the sample. It is possible to fast measure distribution of the magnetic field generated from the sample when a frequency of the alternating current applied to the sample differs from a resonance frequency of the cantilever.
摘要翻译：以交替电流作为样品施加磁头会产生来自样品的交流磁场。悬臂包括由磁性材料制成或涂覆有磁性材料的探针。悬臂在接近样品时被移位。检测悬臂的位移检测样品的磁场分布。当施加到样品的交流电流的频率与悬臂的共振频率不同时，可以快速测量从样品产生的磁场的分布。

8. 发明授权

US07273685B2 Method for controlling semiconductor device production process and a method for producing semiconductor devices 失效
标题翻译：半导体器件制造方法的控制方法以及半导体器件的制造方法
公开(公告)号：US07273685B2
公开(公告)日：2007-09-25
申请号：US11304778
申请日：2005-12-16
申请人： Hideaki Sasazawa , Yasuhiro Yoshitake
发明人： Hideaki Sasazawa , Yasuhiro Yoshitake
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F7/70641
摘要： In order to realize individually and easily optimization of exposure conditions such as exposure dose and focus by photolithography in a production process of semiconductor devices, the present invention is such that: light is radiated onto a pattern on a semiconductor wafer; by an optical system that detects information on a pattern shape using scattered light by its reflection, waveforms of an FEM sample wafer having a plurality of shape deformation patterns prepared in advance are detected and stored; one or more characteristic points on a spectral waveform generated in association with a pattern change is recorded; and a variation model of the characteristic points is obtained. As to a pattern to be measured, a spectral waveform is detected in the same manner as that described above, and deviations (exposure dose deviation and focus deviation) of the formation conditions are estimated from a displacement of the characteristic points on the waveform using the variation model. Thereby, the exposure dose and focus can be independently fed back and the process control can be achieved with high accuracy.
摘要翻译：为了在半导体器件的生产过程中实现通过光刻的曝光量和曝光量等的曝光条件的单独和容易的优化，本发明使得：将光照射到半导体晶片上的图案上; 通过利用其反射检测使用散射光的图案形状的信息的光学系统，检测并存储具有预先准备的多个形状变形图案的FEM样品晶片的波形; 记录与图案变化相关联地生成的光谱波形上的一个或多个特征点; 并获得特征点的变化模型。对于要测量的图案，以与上述相同的方式检测光谱波形，并且使用波形的波形上的特征点的位移来估计形成条件的偏差（曝光剂量偏差和聚焦偏差）变异模型。因此，可以独立地反馈曝光剂量和聚焦，并且可以以高精度实现过程控制。

9. 发明授权

US07355143B1 Circuit board production method and its apparatus 失效
标题翻译：电路板生产方法及其设备
公开(公告)号：US07355143B1
公开(公告)日：2008-04-08
申请号：US09763735
申请日：1999-12-27
申请人： Hiroyuki Nakano , Toshihiko Nakata , Masayoshi Serizawa , Hideaki Sasazawa
发明人： Hiroyuki Nakano , Toshihiko Nakata , Masayoshi Serizawa , Hideaki Sasazawa
IPC分类号： B23K10/00 , B23K26/00
CPC分类号： G01N15/0227 , G01N15/0211 , G01N2015/0216
摘要： Making it possible to execute the detection of the particles floating inside a processing chamber with the use of an optical system including one observing window and one unit (An object of the present invention is, by using an optical system including one observing window and one unit, to make it possible to execute the detection of the particles floating inside a processing chamber.) Also, in order to be able to detect exceedingly feeble particle scattered-lights with a high-accuracy, when performing a desired thin-film forming or thin-film processing treatment toward a to-be-processed target inside the processing chamber, the following method is employed: First, the irradiation with a beam is executed into the processing chamber through the observing window. Here, the beam is P-polarized and is intensity-modulated with a frequency differing from an exciting source's frequency and its integer-multiples, and the observing window has an inclination that forms Brewster angle toward the P-polarized incident beam. Next, backward scattered-lights scattered by the particles inside the processing chamber are received and image-photographed at a detecting optical system through the above-described one and the same observing window. Moreover, the above-described frequency component and a wavelength component of the above-described intensity-modulated beam are detected out of the received signals. Finally, the detected components and the image-photographed image information are used so as to judge the number, the size, and the distribution of the particles.
摘要翻译：通过使用包括一个观察窗口和一个单元的光学系统，可以执行浮动在处理室内的颗粒的检测。本发明的目的是通过使用包括一个观察窗口和一个单元的光学系统，使得可以执行浮在处理室内的颗粒的检测。）此外，为了能够以高精度检测到极度微弱的粒子散射光，当进行所需的薄膜形成或薄对处理室内的待处理靶材进行膜处理，采用以下方法：首先，通过观察窗口将光束照射进入处理室。这里，光束是P偏振光并且以不同于激发光源的频率和其整数倍的频率进行强度调制，并且观察窗口具有朝向P偏振入射光束形成布鲁斯特角的倾斜度。接下来，通过上述同一观察窗口，在检测光学系统中接收并处理由处理室内的颗粒散射的向后散射光并进行图像拍摄。此外，从接收信号中检测出上述强度调制波束的上述频率分量和波长分量。最后，使用检测到的分量和图像拍摄图像信息来判断粒子的数量，大小和分布。

10. 发明申请

US20060183040A1 Method for controlling semiconductor device production process and a method for producing semiconductor devices 失效
标题翻译：半导体器件制造方法的控制方法以及半导体器件的制造方法
公开(公告)号：US20060183040A1
公开(公告)日：2006-08-17
申请号：US11304778
申请日：2005-12-16
申请人： Hideaki Sasazawa , Yasuhiro Yoshitake
发明人： Hideaki Sasazawa , Yasuhiro Yoshitake
IPC分类号： G03C5/00
CPC分类号： G03F7/70641
摘要： In order to realize individually and easily optimization of exposure conditions such as exposure dose and focus by photolithography in a production process of semiconductor devices, the present invention is such that: light is radiated onto a pattern on a semiconductor wafer; by an optical system that detects information on a pattern shape using scattered light by its reflection, waveforms of an FEM sample wafer having a plurality of shape deformation patterns prepared in advance are detected and stored; one or more characteristic points on a spectral waveform generated in association with a pattern change is recorded; and a variation model of the characteristic points is obtained. As to a pattern to be measured, a spectral waveform is detected in the same manner as that described above, and deviations (exposure dose deviation and focus deviation) of the formation conditions are estimated from a displacement of the characteristic points on the waveform using the variation model. Thereby, the exposure dose and focus can be independently fed back and the process control can be achieved with high accuracy.
摘要翻译：为了在半导体器件的生产过程中实现通过光刻的曝光量和曝光量等的曝光条件的单独和容易的优化，本发明使得：将光照射到半导体晶片上的图案上; 通过利用其反射检测使用散射光的图案形状的信息的光学系统，检测并存储具有预先准备的多个形状变形图案的FEM样品晶片的波形; 记录与图案变化相关联地生成的光谱波形上的一个或多个特征点; 并获得特征点的变化模型。对于要测量的图案，以与上述相同的方式检测光谱波形，并且使用波形的波形上的特征点的位移来估计形成条件的偏差（曝光剂量偏差和聚焦偏差）变异模型。因此，可以独立地反馈曝光剂量和聚焦，并且可以以高精度实现过程控制。

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