会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Inspection system and semiconductor device manufacturing method
    • 检测系统和半导体器件制造方法
    • US06775817B2
    • 2004-08-10
    • US10004168
    • 2001-10-30
    • Makoto OnoHisafumi IwataKeiko Kirino
    • Makoto OnoHisafumi IwataKeiko Kirino
    • G06F1750
    • H01L21/67271G01N21/9501G01N21/956H01L22/20
    • A method and system are provided for analyzing defects having the potential to become electrical failures, during the inspection of particles and/or pattern defects of a wafer used in the manufacture of electronic devices such as semiconductor integrated circuits. Defect map data is processed along with failure probability data. Next, defect-dependent failure probability calculations are made to obtain the failure probability of each defect in the defect map data. That data is then used to prepare failure-probability-added defect map data. Further, a selection process of defects to be reviewed is used to reorder and filter defects from the failure-probability-added defect map data, thus selecting one or more defects for review.
    • 提供了一种方法和系统,用于在用于制造诸如半导体集成电路的电子器件的晶片的颗粒和/或图案缺陷的检查期间分析具有变为电气故障的可能性的缺陷。 缺陷图数据与故障概率数据一起处理。 接下来,进行与缺陷相关的故障概率计算,以获得缺陷图数据中的每个缺陷的故障概率。 然后将该数据用于准备故障概率添加缺陷图数据。 此外,使用要检查的缺陷的选择处理用于从故障概率添加缺陷图数据重新排序和过滤缺陷,从而选择一个或多个缺陷以供审查。
    • 7. 发明授权
    • Inspection system, inspection apparatus, inspection program, and production method of semiconductor devices
    • 检测系统,检验仪器,检验程序和半导体器件的生产方法
    • US06687633B2
    • 2004-02-03
    • US10079518
    • 2002-02-22
    • Makoto OnoHisafumi Iwata
    • Makoto OnoHisafumi Iwata
    • G01N3700
    • H01L21/67288
    • In the wafer production process of a semiconductor integrated circuit, an inspection system and an inspection apparatus that convert and output a yield loss at high accuracy from the result of a defect inspection, such as a dark-field inspection and a bright-field inspection without waiting for the result of the final probing test. Defect map data read processing and kill ratio computation data read processing are performed. Subsequently, kill ratio computation processing every defect computes a kill ratio every defect using defect map data and kill ratio computation data. Subsequently, kill ratio computation processing every chip computes a kill ratio every LSI chip using the kill ratio every defect. Subsequently, yield loss computation processing computes a yield loss of the defect map data using the kill ratio every chip and yield loss output processing outputs the computation result.
    • 在半导体集成电路的晶片生产过程中,检查系统和检查装置从缺陷检查的结果(例如暗场检查和明场检查)转换并输出高精度的屈服损失而没有 等待最终探测测试的结果。 执行缺陷地图数据读取处理和杀死比计算数据读取处理。 随后,每个缺陷的杀伤比计算处理使用缺陷图数据和杀死比计算数据计算每个缺陷的杀伤比。 随后,每个芯片的杀死率计算处理使用每个缺陷的杀死率来计算每个LSI芯片的杀死率。 随后,屈服损失计算处理使用每个芯片的杀死率来计算缺陷图数据的屈服损失,并且屈服损失输出处理输出计算结果。
    • 8. 发明授权
    • Defect inspection system
    • 缺陷检查系统
    • US08319960B2
    • 2012-11-27
    • US12770337
    • 2010-04-29
    • Kenji AikoShuichi ChikamatsuMinori NoguchiHisafumi Iwata
    • Kenji AikoShuichi ChikamatsuMinori NoguchiHisafumi Iwata
    • G01N21/88
    • H04N7/18G01N21/9501G01N21/956G01N2021/8822H01L22/12H01L2924/0002H01L2924/00
    • A defect inspection system can suppress an effect of light from a sample rough surface or a regular circuit pattern and increasing a gain of light from a defect such as a foreign material to detect the defect on the sample surface with high sensitivity. When a lens with a large NA value is used, the outer diameter of the lens is 10a, and an angle between the sample surface and a traveling direction of the light from a defect is α1. An oblique detection optics system receives the light from the defect at a reduced elevation angle α2 with respect to the sample surface to reduce light from the sample rough surface, an oxide film rough bottom surface, and a circuit pattern, and to increase the amount of the light from the defect and detected. The diameter 10a of a lens is smaller than the diameter 10b, resulting in a reduction in the ability to focus the scattered light. When a lens with an outer diameter 10c is used to improve the focus ability, the lens interferes with the sample. To avoid the interference, a portion of the lens interfering with the sample is removed. The lens has an aperture larger than the diameter 10b while the lens receives the light scattered at the elevation angle α2, making it possible to improve the ability to detect defects and lens performance simultaneously.
    • 缺陷检查系统可以抑制来自样品粗糙表面或常规电路图案的光的影响,并且增加来自诸如异物的缺陷的光的增益以高灵敏度检测样品表面上的缺陷。 当使用具有大NA值的透镜时,透镜的外径为10a,并且样品表面与来自缺陷的光的行进方向之间的角度为α1。 倾斜检测光学系统以相对于样品表面的降低的仰角α2接收来自缺陷的光,以减少来自样品粗糙表面,氧化膜粗糙底表面和电路图案的光,并且增加 来自缺陷的光并检测。 透镜的直径10a小于直径10b,导致散射光聚焦的能力降低。 当使用外径为10c的透镜来提高聚焦能力时,透镜会干扰样品。 为了避免干扰,去除了与样品干扰的一部分透镜。 透镜具有大于直径10b的孔径,而透镜接收以仰角α2散射的光,从而可以提高同时检测缺陷和透镜性能的能力。
    • 9. 发明授权
    • Method and apparatus for detecting defects
    • 检测缺陷的方法和装置
    • US07426023B2
    • 2008-09-16
    • US11296290
    • 2005-12-08
    • Yoshimasa OhshimaHisafumi IwataHiroyuki Nakano
    • Yoshimasa OhshimaHisafumi IwataHiroyuki Nakano
    • G01N21/00
    • G01N21/47G01N21/21G01N21/94G01N21/9501G01N2021/8825
    • There is disclosed a defect detecting apparatus that focuses a laser beam, irradiates it onto the surface of a sample to be examined, and detects a foreign substance/defect existing on the surface from the scattered light as a result of the irradiation of the beam onto the sample surface. In order to stably detect defects such as foreign substance, the defect detecting apparatus according to the invention is constructed to use a beam shape optical system by which the laser beam emitted from a laser source is shaped to change the illumination intensity from its Gauss distribution to a flat distribution so that the detected signal can be stably produced even if the relative position of a defect/foreign substance to the laser beam irradiation position is changed.
    • 公开了一种将激光束聚焦并将其照射到待检查样品的表面上的缺陷检测装置,并且由于将光束照射到散射光上而检测存在于表面上的异物/缺陷 样品表面。 为了稳定地检测异物等缺陷,根据本发明的缺陷检测装置的结构是使用光束形状光学系统,通过该光束系统将从激光源发射的激光束成形为将照射强度从其高斯分布改变为 平坦分布,使得即使改变了缺陷/异物与激光束照射位置的相对位置,也能够稳定地产生检测信号。