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    • 6. 发明授权
    • Inspection system and semiconductor device manufacturing method
    • 检测系统和半导体器件制造方法
    • US06775817B2
    • 2004-08-10
    • US10004168
    • 2001-10-30
    • Makoto OnoHisafumi IwataKeiko Kirino
    • Makoto OnoHisafumi IwataKeiko Kirino
    • G06F1750
    • H01L21/67271G01N21/9501G01N21/956H01L22/20
    • A method and system are provided for analyzing defects having the potential to become electrical failures, during the inspection of particles and/or pattern defects of a wafer used in the manufacture of electronic devices such as semiconductor integrated circuits. Defect map data is processed along with failure probability data. Next, defect-dependent failure probability calculations are made to obtain the failure probability of each defect in the defect map data. That data is then used to prepare failure-probability-added defect map data. Further, a selection process of defects to be reviewed is used to reorder and filter defects from the failure-probability-added defect map data, thus selecting one or more defects for review.
    • 提供了一种方法和系统,用于在用于制造诸如半导体集成电路的电子器件的晶片的颗粒和/或图案缺陷的检查期间分析具有变为电气故障的可能性的缺陷。 缺陷图数据与故障概率数据一起处理。 接下来,进行与缺陷相关的故障概率计算,以获得缺陷图数据中的每个缺陷的故障概率。 然后将该数据用于准备故障概率添加缺陷图数据。 此外,使用要检查的缺陷的选择处理用于从故障概率添加缺陷图数据重新排序和过滤缺陷,从而选择一个或多个缺陷以供审查。
    • 7. 发明授权
    • Inspection system, inspection apparatus, inspection program, and production method of semiconductor devices
    • 检测系统,检验仪器,检验程序和半导体器件的生产方法
    • US06687633B2
    • 2004-02-03
    • US10079518
    • 2002-02-22
    • Makoto OnoHisafumi Iwata
    • Makoto OnoHisafumi Iwata
    • G01N3700
    • H01L21/67288
    • In the wafer production process of a semiconductor integrated circuit, an inspection system and an inspection apparatus that convert and output a yield loss at high accuracy from the result of a defect inspection, such as a dark-field inspection and a bright-field inspection without waiting for the result of the final probing test. Defect map data read processing and kill ratio computation data read processing are performed. Subsequently, kill ratio computation processing every defect computes a kill ratio every defect using defect map data and kill ratio computation data. Subsequently, kill ratio computation processing every chip computes a kill ratio every LSI chip using the kill ratio every defect. Subsequently, yield loss computation processing computes a yield loss of the defect map data using the kill ratio every chip and yield loss output processing outputs the computation result.
    • 在半导体集成电路的晶片生产过程中,检查系统和检查装置从缺陷检查的结果(例如暗场检查和明场检查)转换并输出高精度的屈服损失而没有 等待最终探测测试的结果。 执行缺陷地图数据读取处理和杀死比计算数据读取处理。 随后,每个缺陷的杀伤比计算处理使用缺陷图数据和杀死比计算数据计算每个缺陷的杀伤比。 随后,每个芯片的杀死率计算处理使用每个缺陷的杀死率来计算每个LSI芯片的杀死率。 随后,屈服损失计算处理使用每个芯片的杀死率来计算缺陷图数据的屈服损失,并且屈服损失输出处理输出计算结果。
    • 8. 发明授权
    • Inspection data analysis program, inspection tools, review apparatus and yield analysis apparatus
    • 检验数据分析程序,检验工具,检查仪器和产量分析仪器
    • US07421357B2
    • 2008-09-02
    • US10887827
    • 2004-07-12
    • Makoto OnoYohei Asakawa
    • Makoto OnoYohei Asakawa
    • G06F19/00G01R31/26
    • H01L22/20G06T7/0004G06T2207/30148Y02P90/86
    • An operation unit executes a process for calling to a main memory first data representative of a result of equipment QC applied to a production unit. A process for reading out to the main memory an amount of change in failure in accordance with particle numbers calculated for individual defect sizes from second inspection data representative of a result of equipment QC is applied to the production unit. Electrical test data of a product processed by the production unit during a period inclusive of the time that the second inspection is carried outis also read to the main memory. A process is also executed for using the amount of change in failure in accordance with the calculated particle numbers and the particle numbers for individual sizes determined from the first inspection data to determine an impact on the product by particles generated in the production equipment when the first inspection data is detected.
    • 操作单元执行用于向主存储器调用代表应用于生产单元的设备QC的结果的第一数据的处理。 对于生产单元,将向根据第二检查数据计算出的各个缺陷尺寸的粒子数量的故障量的变化量写入主存储器的处理被应用于生产单元。 在包括执行第二次检查的时间段期间由生产单元处理的产品的电气测试数据也被读取到主存储器。 还执行一个处理,以根据从第一检查数据确定的计算的粒子数和个体大小的粒子数量来使用故障变化量,以确定在生产设备中产生的颗粒对产品的影响时,当第一 检测数据。
    • 9. 发明申请
    • Inspection data analysis program, inspection tools, review apparatus and yield analysis apparatus
    • 检验数据分析程序,检验工具,检查仪器和产量分析仪器
    • US20050021268A1
    • 2005-01-27
    • US10887827
    • 2004-07-12
    • Makoto OnoYohei Asakawa
    • Makoto OnoYohei Asakawa
    • G05B19/418G06T7/00H01L21/02H01L21/66G06F19/00
    • H01L22/20G06T7/0004G06T2207/30148Y02P90/86
    • An operation unit executes a process for calling to a main memory first data representative of a result of equipment QC applied to a production unit, a process for reading out to the main memory an amount of changing of failure number in accordance with particle numbers calculated for individual defect sizes from second inspection data representative of a result of equipment QC applied to the production unit and electrical test data of a product processed by the production unit during a period inclusive of time that the second inspection is carried out, and a process for using the amount of changing of failure number in accordance with the calculated particle numbers and the particle numbers for individual sizes determined from the first inspection data to determine an impact on the product by particles generated in the production equipment at time that the first inspection data is detected.
    • 操作单元执行对主存储器的第一数据的调用处理,第一数据表示应用于生产单元的设备QC的结果,根据对于主存储器计算的粒子数量,向主存储器读出故障数量的变化量的处理 来自表示生产单元的设备QC的结果的第二检查数据和由生产单元在包括进行第二次检查的时间段内处理的产品的电气测试数据的单独缺陷尺寸以及使用 根据计算出的粒子数和根据第一检查数据确定的个体大小的粒子数量来改变故障次数的量,以确定在检测到第一检查数据时在生产设备中产生的颗粒对产品的影响 。