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1. 发明申请

US20070030874A1 Surface-emitting laser element and laser module using the same 审中-公开
标题翻译：表面发射激光元件和使用其的激光模块
公开(公告)号：US20070030874A1
公开(公告)日：2007-02-08
申请号：US11515017
申请日：2006-09-05
申请人： Maiko Ariga , Norihiro Iwai , Setiagung Casimirus , Hitoshi Shimizu , Fumio Koyama , Masakazu Arai , Takeo Kageyama
发明人： Maiko Ariga , Norihiro Iwai , Setiagung Casimirus , Hitoshi Shimizu , Fumio Koyama , Masakazu Arai , Takeo Kageyama
IPC分类号： H01S3/13 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/1221 , H01S5/18311 , H01S5/2213 , H01S5/2214 , H01S5/3054 , H01S5/3086 , H01S5/32366 , H01S5/3407 , H01S5/34306 , H01S5/34313 , H01S2301/02
摘要： A cavity is formed by a lower multilayer mirror and an upper multilayer mirror and an active layer is arranged between the lower multilayer mirror and the upper multilayer mirror in a surface-emitting laser element. A relaxation oscillation frequency at a bias point in the cavity is set to exceed an optical communication frequency for modulating a laser light output from the surface-emitting laser element.
摘要翻译：通过下多层反射镜和上多层反射镜形成空腔，并且在表面发射激光元件中的下多层反射镜和上多层反射镜之间布置有源层。空腔中的偏置点处的弛豫振荡频率被设定为超过用于调制从表面发射激光器元件输出的激光的光通信频率。

2. 发明授权

US07656924B2 Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser 有权
标题翻译：表面发射激光器，收发器，光收发器和采用表面发射激光器的光通信系统
公开(公告)号：US07656924B2
公开(公告)日：2010-02-02
申请号：US10958125
申请日：2004-10-05
申请人： Hitoshi Shimizu , Setiagung Casimirus , Yasukazu Shiina , Takeshi Hama , Norihiro Iwai
发明人： Hitoshi Shimizu , Setiagung Casimirus , Yasukazu Shiina , Takeshi Hama , Norihiro Iwai
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18305 , H01S5/18313 , H01S5/18347 , H01S5/18391 , H01S5/34313
摘要： A surface emitting laser includes a lower semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area; an active layer vertically sandwiched by cladding layers; a current confinement layer of AlzGa1-zAs having an oxide area in a peripheral portion of the current confinement layer, where 0.95≦z≦1; and an upper semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area. The low-refractive-index area of at least one of the lower semiconductor multilayer mirror and the upper semiconductor multilayer mirror includes an Alz1Ga1-z1As layer with a thickness thinner than that of the current confinement layer, where z≦z1.
摘要翻译：表面发射激光器包括由多对高折射率区域和低折射率区域形成的下半导体多层反射镜; 垂直夹层的有源层; 在电流限制层的周边部分中具有氧化物区域的AlzGa1-zAs的电流限制层，其中0.95≤z≤1; 以及由多对高折射率区域和低折射率区域构成的上半导体多层反射镜。下半导体多层反射镜和上半导体多层反射镜中的至少一个的低折射率区域包括厚度比电流限制层薄的Alz1Ga1-z1As层，其中z <= z1。

3. 发明申请

US20100086311A1 SURFACE EMITTING LASER, AND TRANSCEIVER, OPTICAL TRANSCEIVER, AND OPTICAL COMMUNICATION SYSTEM EMPLOYING THE SURFACE EMITTING LASER 审中-公开
标题翻译：表面发射激光和收发器，光收发器和使用表面发射激光的光通信系统
公开(公告)号：US20100086311A1
公开(公告)日：2010-04-08
申请号：US12634895
申请日：2009-12-10
申请人： Hitoshi SHIMIZU , Setiagung Casimirus , Yasukazu Shiina , Takeshi Hama , Norihiro Iwai
发明人： Hitoshi SHIMIZU , Setiagung Casimirus , Yasukazu Shiina , Takeshi Hama , Norihiro Iwai
IPC分类号： H04B10/00
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18305 , H01S5/18313 , H01S5/18347 , H01S5/18391 , H01S5/34313
摘要： A surface emitting laser includes a lower semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area; an active layer vertically sandwiched by cladding layers; a current confinement layer of AlzGa1-zAs having an oxide area in a peripheral portion of the current confinement layer, where 0.95≦z≦1; and an upper semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area. The low-refractive-index area of at least one of the lower semiconductor multilayer mirror and the upper semiconductor multilayer mirror includes an Alz1Ga1-z1As layer with a thickness thinner than that of the current confinement layer, where z≦z1.
摘要翻译：表面发射激光器包括由多对高折射率区域和低折射率区域形成的下半导体多层反射镜; 垂直夹层的有源层; 在电流限制层的周边部分中具有氧化物区域的AlzGa1-zAs的电流限制层，其中0.95＆lt; 1; z＆nlE; 1; 以及由多对高折射率区域和低折射率区域构成的上半导体多层反射镜。下半导体多层反射镜和上半导体多层反射镜中的至少一个的低折射率区域包括厚度比电流限制层薄的Alz1Ga1-z1As层，其中z＆nlE; z1。

4. 发明申请

US20050123014A1 Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser 有权
标题翻译：表面发射激光器，收发器，光收发器和采用表面发射激光器的光通信系统
公开(公告)号：US20050123014A1
公开(公告)日：2005-06-09
申请号：US10958125
申请日：2004-10-05
申请人： Hitoshi Shimizu , Setiagung Casimirus , Yasukazu Shiina , Takeshi Hama , Norihiro Iwai
发明人： Hitoshi Shimizu , Setiagung Casimirus , Yasukazu Shiina , Takeshi Hama , Norihiro Iwai
IPC分类号： H01S5/00 , H01S5/183 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18305 , H01S5/18313 , H01S5/18347 , H01S5/18391 , H01S5/34313
摘要： A surface emitting laser includes a lower semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area; an active layer vertically sandwiched by cladding layers; a current confinement layer of AlzGa1-zAs having an oxide area in a peripheral portion of the current confinement layer, where 0.95≦z≦1; and an upper semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area. The low-refractive-index area of at least one of the lower semiconductor multilayer mirror and the upper semiconductor multilayer mirror includes an Alz1Ga1-z1As layer with a thickness thinner than that of the current confinement layer, where z≦z1.
摘要翻译：表面发射激光器包括由多对高折射率区域和低折射率区域形成的下半导体多层反射镜; 垂直夹层的有源层; 在电流限制层的外围部分中具有氧化物面积的Al z电流限制层，其中0.95 <= z <= 1; 以及由多对高折射率区域和低折射率区域构成的上半导体多层反射镜。下半导体多层反射镜和上半导体多层反射镜中的至少一个的低折射率区域包括具有厚度的Al z 1 Ga 1-z 1 As层薄于当前限制层，其中z <= z1。

5. 发明授权

US07974327B2 Surface emitting laser element array 有权
标题翻译：表面发射激光元件阵列
公开(公告)号：US07974327B2
公开(公告)日：2011-07-05
申请号：US12224719
申请日：2006-09-01
申请人： Maiko Ariga , Takeo Kageyama , Norihiro Iwai , Kazuaki Nishikata
发明人： Maiko Ariga , Takeo Kageyama , Norihiro Iwai , Kazuaki Nishikata
IPC分类号： H01S5/183 , H01S5/42
CPC分类号： H01S5/423 , H01L2224/48091 , H01L2224/49175 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/06226 , H01S5/18313 , H01S5/18341 , H01S2301/176 , H01S2301/18 , H01L2924/00014
摘要： A surface emitting laser element array comprises a plurality of surface emitting laser elements (15) on a same substrate (1) each comprising a mesa post formed of a laminated structure including an active layer (4) for reducing a crosstalk between the surface emitting laser elements constituting the surface emitting laser element array, and for improving a high speed response, wherein each of the surface emitting laser elements (15) comprises a first electrode (9), a second electrode (10) and a third electrode (11) that have a polarity different from that of the first electrode (9); the first electrode (9) is arranged on the mesa post; the second electrode (10) is arranged on one surface of the substrate (1) same as that of the first electrode (9); the third electrode (11) is arranged on the other surface of the substrate (1) opposite to that of the first electrode and the second electrode (9, 10) and is provided as a common electrode of the surface emitting laser elements (15); and an electric current is applied to the active layer (4) using the first electrode (9) and the second electrode (10).
摘要翻译：表面发射激光元件阵列包括在同一衬底（1）上的多个表面发射激光器元件（15），每个表面发射激光器元件（15）包括由包括有源层（4）形成的层叠结构形成的台面柱，用于减少表面发射激光器构成表面发射激光元件阵列的元件，并且用于改善高速响应，其中每个表面发射激光器元件（15）包括第一电极（9），第二电极（10）和第三电极（11），其中具有与第一电极（9）不同的极性; 第一电极（9）布置在台面柱上; 第二电极（10）布置在与第一电极（9）相同的基板（1）的一个表面上; 第三电极（11）布置在与第一电极和第二电极（9,10）相反的基板（1）的另一个表面上，并且被设置为表面发射激光元件（15）的公共电极， ; 并且使用第一电极（9）和第二电极（10）向有源层（4）施加电流。

6. 发明申请

US20100195689A1 SURFACE EMITTING LASER ELEMENT ARRAY 有权
标题翻译：表面发射激光元件阵列
公开(公告)号：US20100195689A1
公开(公告)日：2010-08-05
申请号：US12224719
申请日：2006-09-01
申请人： Maiko Ariga , Takeo Kageyama , Norihiro Iwai , Kazuaki Nishikata
发明人： Maiko Ariga , Takeo Kageyama , Norihiro Iwai , Kazuaki Nishikata
IPC分类号： H01S5/42 , H01S5/323 , H01S5/187
CPC分类号： H01S5/423 , H01L2224/48091 , H01L2224/49175 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/06226 , H01S5/18313 , H01S5/18341 , H01S2301/176 , H01S2301/18 , H01L2924/00014
摘要： A surface emitting laser element array comprises a plurality of surface emitting laser elements (15) on a same substrate (1) each comprising a mesa post formed of a laminated structure including an active layer (4) for reducing a crosstalk between the surface emitting laser elements constituting the surface emitting laser element array, and for improving a high speed response, wherein each of the surface emitting laser elements (15) comprises a first electrode (9), a second electrode (10) and a third electrode (11) that have a polarity different from that of the first electrode (9); the first electrode (9) is arranged on the mesa post; the second electrode (10) is arranged on one surface of the substrate (1) same as that of the first electrode (9); the third electrode (11) is arranged on the other surface of the substrate (1) opposite to that of the first electrode and the second electrode (9, 10) and is provided as a common electrode of the surface emitting laser elements (15); and an electric current is applied to the active layer (4) using the first electrode (9) and the second electrode (10).
摘要翻译：表面发射激光元件阵列包括在同一衬底（1）上的多个表面发射激光器元件（15），每个表面发射激光器元件（15）包括由包括有源层（4）形成的层叠结构形成的台面柱，用于减少表面发射激光器构成表面发射激光元件阵列的元件，并且用于改善高速响应，其中每个表面发射激光器元件（15）包括第一电极（9），第二电极（10）和第三电极（11），其中具有与第一电极（9）不同的极性; 第一电极（9）布置在台面柱上; 第二电极（10）布置在与第一电极（9）相同的基板（1）的一个表面上; 第三电极（11）布置在与第一电极和第二电极（9,10）相反的基板（1）的另一个表面上，并且被设置为表面发射激光元件（15）的公共电极， ; 并且使用第一电极（9）和第二电极（10）向有源层（4）施加电流。

7. 发明授权

US08494022B2 Surface emitting laser, surface emitting laser array, light source and optical module 有权
标题翻译：表面发射激光器，表面发射激光器阵列，光源和光学模块
公开(公告)号：US08494022B2
公开(公告)日：2013-07-23
申请号：US13075302
申请日：2011-03-30
申请人： Hitoshi Shimizu , Takeo Kageyama , Keishi Takaki , Norihiro Iwai
发明人： Hitoshi Shimizu , Takeo Kageyama , Keishi Takaki , Norihiro Iwai
IPC分类号： H01S5/00
CPC分类号： G02B6/4214 , G02B6/421 , H01S5/0014 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/06226 , H01S5/18311 , H01S5/18341 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/3215
摘要： A surface emitting laser is formed of a composition in which bandgap energy of layers from immediately above a current confinement layer to a second conductivity type contact layer is reduced towards the second conductivity type contact layer in a stacking direction, and a composition in which bandgap energy of layers from immediately below the current confinement layer to a first conductivity type contact layer is reduced towards the first conductivity type contact layer in a stacking direction while bypassing a quantum well layer or a quantum dot of an active layer, and includes a second conductivity type cladding layer including a material for reducing the mobility of carriers.
摘要翻译：表面发射激光器由其中紧邻电流限制层上方到第二导电类型接触层的层的带隙能量沿层叠方向朝向第二导电类型接触层减小的组合物形成，并且其中带隙能量从紧邻电流限制层下方到第一导电类型接触层的层沿叠层方向朝向第一导电类型接触层减少，同时旁路有源层的量子阱层或量子点，并且包括第二导电类型包层，其包括用于降低载流子迁移率的材料。

8. 发明申请

US20080205463A1 METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE AND VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE 有权
标题翻译：制造垂直表面发射激光器件和垂直孔表面激光器件的方法
公开(公告)号：US20080205463A1
公开(公告)日：2008-08-28
申请号：US12029019
申请日：2008-02-11
申请人： Keishi TAKAKI , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
发明人： Keishi TAKAKI , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/183 , H01L21/02
CPC分类号： H01S5/18333 , H01S5/18311
摘要： A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.
摘要翻译：通过在包括活性层的多个半导体层上交替地生长AlAs层和含有III族元素X的厚度比在97:3和99:1之间的范围的XAs层来形成选择性氧化层。选择性氧化层被选择性地氧化以制造垂直腔表面发射激光器。

9. 发明授权

US07888145B2 Method of manufacturing vertical-cavity surface-emitting laser device and vertical-cavity surface-emitting laser device 有权
标题翻译：制造垂直腔表面发射激光器件和垂直腔表面发射激光器件的方法
公开(公告)号：US07888145B2
公开(公告)日：2011-02-15
申请号：US12029019
申请日：2008-02-11
申请人： Keishi Takaki , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
发明人： Keishi Takaki , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01L21/00 , H01L27/15
CPC分类号： H01S5/18333 , H01S5/18311
摘要： A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.
摘要翻译：通过在包括活性层的多个半导体层上交替地生长AlAs层和含有III族元素X的厚度比在97:3和99:1之间的范围的XAs层来形成选择性氧化层。选择性氧化层被选择性地氧化以制造垂直腔表面发射激光器。

10. 发明授权

US07885307B2 Vertical-cavity surface-emitting semiconductor laser device 有权
标题翻译：垂直腔表面发射半导体激光器件
公开(公告)号：US07885307B2
公开(公告)日：2011-02-08
申请号：US11551101
申请日：2006-10-19
申请人： Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
发明人： Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/1835 , H01S5/0425 , H01S5/18311 , H01S5/18338 , H01S5/18341 , H01S5/18369 , H01S5/3202
摘要： A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer has a central current injection area and a peripheral current blocking area oxidized from the sidewall of the mesa post. The mesa post has a substantially square cross-sectional shape, thereby allowing an oxidation heat treatment to configure a substantially circular current injection area in the current-confinement oxide layer.
摘要翻译：垂直腔表面发射（VCSEL）器件具有包括顶部DBR镜，有源层，电流限制氧化物层和底部DBR镜的层结构，该层结构被配置为台面柱。电流限制氧化物层具有从台面柱的侧壁氧化的中心电流注入区域和外围电流阻挡区域。台面柱具有基本上正方形的横截面形状，从而允许氧化热处理在电流限制氧化物层中构造基本上圆形的电流注入区域。

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