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1. 发明授权

US08494022B2 Surface emitting laser, surface emitting laser array, light source and optical module 有权
标题翻译：表面发射激光器，表面发射激光器阵列，光源和光学模块
公开(公告)号：US08494022B2
公开(公告)日：2013-07-23
申请号：US13075302
申请日：2011-03-30
申请人： Hitoshi Shimizu , Takeo Kageyama , Keishi Takaki , Norihiro Iwai
发明人： Hitoshi Shimizu , Takeo Kageyama , Keishi Takaki , Norihiro Iwai
IPC分类号： H01S5/00
CPC分类号： G02B6/4214 , G02B6/421 , H01S5/0014 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/06226 , H01S5/18311 , H01S5/18341 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/3215
摘要： A surface emitting laser is formed of a composition in which bandgap energy of layers from immediately above a current confinement layer to a second conductivity type contact layer is reduced towards the second conductivity type contact layer in a stacking direction, and a composition in which bandgap energy of layers from immediately below the current confinement layer to a first conductivity type contact layer is reduced towards the first conductivity type contact layer in a stacking direction while bypassing a quantum well layer or a quantum dot of an active layer, and includes a second conductivity type cladding layer including a material for reducing the mobility of carriers.
摘要翻译：表面发射激光器由其中紧邻电流限制层上方到第二导电类型接触层的层的带隙能量沿层叠方向朝向第二导电类型接触层减小的组合物形成，并且其中带隙能量从紧邻电流限制层下方到第一导电类型接触层的层沿叠层方向朝向第一导电类型接触层减少，同时旁路有源层的量子阱层或量子点，并且包括第二导电类型包层，其包括用于降低载流子迁移率的材料。

2. 发明申请

US20080205463A1 METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE AND VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE 有权
标题翻译：制造垂直表面发射激光器件和垂直孔表面激光器件的方法
公开(公告)号：US20080205463A1
公开(公告)日：2008-08-28
申请号：US12029019
申请日：2008-02-11
申请人： Keishi TAKAKI , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
发明人： Keishi TAKAKI , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/183 , H01L21/02
CPC分类号： H01S5/18333 , H01S5/18311
摘要： A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.
摘要翻译：通过在包括活性层的多个半导体层上交替地生长AlAs层和含有III族元素X的厚度比在97:3和99:1之间的范围的XAs层来形成选择性氧化层。选择性氧化层被选择性地氧化以制造垂直腔表面发射激光器。

3. 发明授权

US07888145B2 Method of manufacturing vertical-cavity surface-emitting laser device and vertical-cavity surface-emitting laser device 有权
标题翻译：制造垂直腔表面发射激光器件和垂直腔表面发射激光器件的方法
公开(公告)号：US07888145B2
公开(公告)日：2011-02-15
申请号：US12029019
申请日：2008-02-11
申请人： Keishi Takaki , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
发明人： Keishi Takaki , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01L21/00 , H01L27/15
CPC分类号： H01S5/18333 , H01S5/18311
摘要： A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.
摘要翻译：通过在包括活性层的多个半导体层上交替地生长AlAs层和含有III族元素X的厚度比在97:3和99:1之间的范围的XAs层来形成选择性氧化层。选择性氧化层被选择性地氧化以制造垂直腔表面发射激光器。

4. 发明授权

US08488644B2 Semiconductor laser element and manufacturing method thereof 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US08488644B2
公开(公告)日：2013-07-16
申请号：US13133946
申请日：2009-12-10
申请人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/2072
摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.
摘要翻译：半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层在第一半导体层和电流限制层之间形成的掺杂浓度。第一电极设置成接触第一半导体层的表面的一部分。第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。第二半导体层与扩散部接触。第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

5. 发明申请

US20110261852A1 SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US20110261852A1
公开(公告)日：2011-10-27
申请号：US13133946
申请日：2009-12-10
申请人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/10 , H01L33/20 , B82Y20/00
CPC分类号： H01S5/18341 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/2072
摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.
摘要翻译：半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层在第一半导体层和电流限制层之间形成的掺杂浓度。第一电极设置成接触第一半导体层的表面的一部分。第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。第二半导体层与扩散部接触。第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

6. 发明申请

US20110274131A1 TWO-DIMENSIONAL SURFACE-EMITTING LASER ARRAY ELEMENT, SURFACE-EMITTING LASER DEVICE AND LIGHT SOURCE 审中-公开
标题翻译：二维表面发射激光阵列元件，表面发射激光器件和光源
公开(公告)号：US20110274131A1
公开(公告)日：2011-11-10
申请号：US13142996
申请日：2010-01-20
申请人： Keishi Takaki , Hirotatsu Ishii , Hitoshi Shimizu , Norihiro Iwai
发明人： Keishi Takaki , Hirotatsu Ishii , Hitoshi Shimizu , Norihiro Iwai
IPC分类号： H01S5/42
CPC分类号： H01S5/423 , H01S5/02284 , H01S5/0422 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/2214 , H01S5/4018
摘要： Included are a plurality of surface-emitting laser elements each of which includes a substrate; a lower multilayer reflective mirror and an upper multilayer reflective mirror that are formed on the substrate and are formed from a periodic structure of a high-refractive index layer and a low-refractive index layer; an active layer provided between the lower multilayer reflective mirror and the upper multilayer reflective mirror; a lower contact layer positioned between the active layer and the lower multilayer reflective mirror, and is extended to an outer peripheral side of the upper multilayer reflective mirror; a lower electrode formed on a surface of a portion where the lower contact layer is extended; and an upper electrode for injecting a current to the active layer, wherein the surface-emitting laser elements are electrically connected in series to each other to form a series-connected element array. This allows provision of a two-dimensional surface-emitting laser array element capable of achieving high energy conversion efficiency with a simple structure and capable of high integration, and a surface-emitting laser device and a light source using the same.
摘要翻译：包括多个表面发射激光器元件，每个表面发射激光器元件包括衬底; 形成在基板上并由高折射率层和低折射率层的周期性结构形成的下多层反射镜和上多层反射镜; 设置在所述下多层反射镜和所述上多层反射镜之间的有源层; 位于有源层和下多层反射镜之间的下接触层，并延伸到上多层反射镜的外周侧; 形成在下接触层延伸的部分的表面上的下电极; 以及用于向有源层注入电流的上电极，其中所述表面发射激光元件彼此串联电连接以形成串联连接的元件阵列。这允许提供能够以简单结构实现高能量转换效率且能够高集成度的二维表面发射激光器阵列元件，以及使用该二维表面发射激光器阵列元件的光源。

7. 发明申请

US20070030874A1 Surface-emitting laser element and laser module using the same 审中-公开
标题翻译：表面发射激光元件和使用其的激光模块
公开(公告)号：US20070030874A1
公开(公告)日：2007-02-08
申请号：US11515017
申请日：2006-09-05
申请人： Maiko Ariga , Norihiro Iwai , Setiagung Casimirus , Hitoshi Shimizu , Fumio Koyama , Masakazu Arai , Takeo Kageyama
发明人： Maiko Ariga , Norihiro Iwai , Setiagung Casimirus , Hitoshi Shimizu , Fumio Koyama , Masakazu Arai , Takeo Kageyama
IPC分类号： H01S3/13 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/1221 , H01S5/18311 , H01S5/2213 , H01S5/2214 , H01S5/3054 , H01S5/3086 , H01S5/32366 , H01S5/3407 , H01S5/34306 , H01S5/34313 , H01S2301/02
摘要： A cavity is formed by a lower multilayer mirror and an upper multilayer mirror and an active layer is arranged between the lower multilayer mirror and the upper multilayer mirror in a surface-emitting laser element. A relaxation oscillation frequency at a bias point in the cavity is set to exceed an optical communication frequency for modulating a laser light output from the surface-emitting laser element.
摘要翻译：通过下多层反射镜和上多层反射镜形成空腔，并且在表面发射激光元件中的下多层反射镜和上多层反射镜之间布置有源层。空腔中的偏置点处的弛豫振荡频率被设定为超过用于调制从表面发射激光器元件输出的激光的光通信频率。

8. 发明授权

US09300114B2 Laser device, method of manufacturing the same, laser device array, light source and light module 有权
标题翻译：激光装置及其制造方法，激光装置阵列，光源和光模块
公开(公告)号：US09300114B2
公开(公告)日：2016-03-29
申请号：US13435061
申请日：2012-03-30
申请人： Hitoshi Shimizu , Toshihito Suzuki , Yasumasa Kawakita , Keishi Takaki
发明人： Hitoshi Shimizu , Toshihito Suzuki , Yasumasa Kawakita , Keishi Takaki
IPC分类号： G02B6/12 , H01S5/183 , B82Y20/00 , H01S5/00 , H01S5/343 , H01S5/42
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0021 , H01S5/18333 , H01S5/18358 , H01S5/34306 , H01S5/423 , H01S2301/176
摘要： Provided is a laser device comprising a substrate, an active layer, and a current confinement layer. The current confinement layer includes an oxide layer that is formed extending from a edge of the current confinement layer in a parallel plane parallel to a surface of the substrate, toward a center of the current confinement layer along the parallel plane, and that does not have an inflection point between the edge and a tip portion formed closer to the center or has a plurality of inflection points formed between the edge and the tip portion.
摘要翻译：提供了一种激光器件，其包括衬底，有源层和电流限制层。电流限制层包括从平行于衬底表面的平行平面中的电流限制层边缘形成的氧化物层沿着平行平面向电流限制层的中心延伸，并且不具有所述边缘和形成在所述中心附近的尖端部分之间的拐点或在所述边缘和所述尖端部分之间形成有多个拐点。

9. 发明申请

US20050123014A1 Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser 有权
标题翻译：表面发射激光器，收发器，光收发器和采用表面发射激光器的光通信系统
公开(公告)号：US20050123014A1
公开(公告)日：2005-06-09
申请号：US10958125
申请日：2004-10-05
申请人： Hitoshi Shimizu , Setiagung Casimirus , Yasukazu Shiina , Takeshi Hama , Norihiro Iwai
发明人： Hitoshi Shimizu , Setiagung Casimirus , Yasukazu Shiina , Takeshi Hama , Norihiro Iwai
IPC分类号： H01S5/00 , H01S5/183 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18305 , H01S5/18313 , H01S5/18347 , H01S5/18391 , H01S5/34313
摘要： A surface emitting laser includes a lower semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area; an active layer vertically sandwiched by cladding layers; a current confinement layer of AlzGa1-zAs having an oxide area in a peripheral portion of the current confinement layer, where 0.95≦z≦1; and an upper semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area. The low-refractive-index area of at least one of the lower semiconductor multilayer mirror and the upper semiconductor multilayer mirror includes an Alz1Ga1-z1As layer with a thickness thinner than that of the current confinement layer, where z≦z1.
摘要翻译：表面发射激光器包括由多对高折射率区域和低折射率区域形成的下半导体多层反射镜; 垂直夹层的有源层; 在电流限制层的外围部分中具有氧化物面积的Al z电流限制层，其中0.95 <= z <= 1; 以及由多对高折射率区域和低折射率区域构成的上半导体多层反射镜。下半导体多层反射镜和上半导体多层反射镜中的至少一个的低折射率区域包括具有厚度的Al z 1 Ga 1-z 1 As层薄于当前限制层，其中z <= z1。

10. 发明授权

US06858863B2 Semiconductor laser device having a high characteristic temperature 有权
标题翻译：具有高特征温度的半导体激光器件
公开(公告)号：US06858863B2
公开(公告)日：2005-02-22
申请号：US10094733
申请日：2002-03-08
申请人： Hitoshi Shimizu , Kouji Kumada , Norihiro Iwai
发明人： Hitoshi Shimizu , Kouji Kumada , Norihiro Iwai
IPC分类号： H01S5/343 , H01S5/183 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/34 , H01L29/06
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/2068 , H01S5/3209 , H01S5/32366 , H01S5/32375 , H01S5/3403 , H01S5/34306 , H01S5/34353
摘要： A semiconductor laser device includes a resonant cavity formed on a GaAs substrate, the resonant cavity including a quantum well (QW) active layer structure having a GaInNAs(Sb) well layer and a pair of barrier layers. The QW structure has a conduction band offset energy (ΔEc) equal to or higher than 350 milli-electron-volts (meV) between the well layer and the barrier layers, and each of the barrier layers a tensile strain equal to or lower than 2.5%.
摘要翻译：半导体激光器件包括形成在GaAs衬底上的谐振腔，所述谐振腔包括具有GaInNA（Sb）阱层和一对阻挡层的量子阱（QW）有源层结构。 QW结构具有等于或高于阱层与阻挡层之间的350毫伏电压（meV）的导带偏移能量（DeltaEc），并且每个阻挡层的拉伸应变等于或小于2.5 ％。

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