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1. 发明授权

US08861562B2 Vertical light emitting device and manufacturing method 有权
标题翻译：垂直发光装置及其制造方法
公开(公告)号：US08861562B2
公开(公告)日：2014-10-14
申请号：US13530255
申请日：2012-06-22
申请人： Toshihito Suzuki , Keishi Takaki , Suguru Imai , Yasumasa Kawakita
发明人： Toshihito Suzuki , Keishi Takaki , Suguru Imai , Yasumasa Kawakita
IPC分类号： H01S5/00
CPC分类号： H01S5/18327 , H01S5/18311 , H01S5/18333 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S2301/02 , H01S2301/166
摘要： Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.
摘要翻译：提供一种垂直发光装置，其包括彼此面对并且使光振荡的上部多层反射膜和下部多层反射膜; 形成在上层多层反射膜的下方的中间层，具有与上层多层反射膜不同的组成的层; 以及电极部，其形成为将所述中间层夹在与所述光的振荡方向平行的横截面中，并且具有高于所述中间层的顶面的顶端。在形成电极部以夹持中间层之后，将上部多层反射膜层叠在中间层上。

2. 发明授权

US08494022B2 Surface emitting laser, surface emitting laser array, light source and optical module 有权
标题翻译：表面发射激光器，表面发射激光器阵列，光源和光学模块
公开(公告)号：US08494022B2
公开(公告)日：2013-07-23
申请号：US13075302
申请日：2011-03-30
申请人： Hitoshi Shimizu , Takeo Kageyama , Keishi Takaki , Norihiro Iwai
发明人： Hitoshi Shimizu , Takeo Kageyama , Keishi Takaki , Norihiro Iwai
IPC分类号： H01S5/00
CPC分类号： G02B6/4214 , G02B6/421 , H01S5/0014 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/06226 , H01S5/18311 , H01S5/18341 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/3215
摘要： A surface emitting laser is formed of a composition in which bandgap energy of layers from immediately above a current confinement layer to a second conductivity type contact layer is reduced towards the second conductivity type contact layer in a stacking direction, and a composition in which bandgap energy of layers from immediately below the current confinement layer to a first conductivity type contact layer is reduced towards the first conductivity type contact layer in a stacking direction while bypassing a quantum well layer or a quantum dot of an active layer, and includes a second conductivity type cladding layer including a material for reducing the mobility of carriers.
摘要翻译：表面发射激光器由其中紧邻电流限制层上方到第二导电类型接触层的层的带隙能量沿层叠方向朝向第二导电类型接触层减小的组合物形成，并且其中带隙能量从紧邻电流限制层下方到第一导电类型接触层的层沿叠层方向朝向第一导电类型接触层减少，同时旁路有源层的量子阱层或量子点，并且包括第二导电类型包层，其包括用于降低载流子迁移率的材料。

3. 发明授权

US08204093B2 Method of manufacturing vertical-cavity surface emitting laser and vertical-cavity surface emitting laser array 有权
标题翻译：垂直腔表面发射激光器和垂直腔表面发射激光器阵列的制造方法
公开(公告)号：US08204093B2
公开(公告)日：2012-06-19
申请号：US12560860
申请日：2009-09-16
申请人： Keishi Takaki , Norihiro Iwai , Koji Hiraiwa
发明人： Keishi Takaki , Norihiro Iwai , Koji Hiraiwa
IPC分类号： H01S5/10 , H01S5/183
CPC分类号： H01S5/18341 , H01S5/0208 , H01S5/0425 , H01S5/0655 , H01S5/18308 , H01S5/18311 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/2004 , H01S5/2214 , H01S5/3054
摘要： A method of manufacturing a surface emitting laser element of a vertical cavity type comprises sequential accumulation that accumulates a reflecting mirror of a multilayered film layer at a lower side of the substrate, and accumulates semiconductor layers onto the reflecting minor at the lower side that comprises an active layer and a contact layer. The process includes forming a first layer of dielectric substance on the contact layer, forming an electrode of an annular shape on the contact layer that has an open part to be arranged for the first layer at an inner side of the open part, and forming a second layer of dielectric substance to cover the first layer and a gap formed between the first layer and the electrode of the annular shape. The accumulated semiconductor layers are etched to form a mesa post, using the electrode of the annular shape as a mask.
摘要翻译：制造垂直腔型表面发射激光元件的方法包括在衬底的下侧积累多层膜层的反射镜的顺序累积，并将半导体层积聚在下侧的反射镜上，活性层和接触层。该方法包括在接触层上形成第一层介电物质，在接触层上形成环状的电极，该接触层在开口部分的内侧具有用于第一层的开放部分，并形成第二层介电物质以覆盖第一层，以及形成在第一层和环形形状的电极之间的间隙。使用环形的电极作为掩模，蚀刻累积的半导体层以形成台面柱。

4. 发明授权

US07593448B2 Semiconductor laser module and optical transmission apparatus using the semiconductor laser module 有权
标题翻译：半导体激光模块和使用半导体激光模块的光传输装置
公开(公告)号：US07593448B2
公开(公告)日：2009-09-22
申请号：US10837682
申请日：2004-05-04
申请人： Keishi Takaki , Junji Yoshida
发明人： Keishi Takaki , Junji Yoshida
IPC分类号： H01S3/08
CPC分类号： H04B10/503 , H01S5/0064 , H01S5/02208 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/0683 , H01S5/1039 , H01S5/12 , H01S5/2275
摘要： A semiconductor laser module includes a distributed-feedback laser. When a predetermined transmission loss, a predetermined number of channels, and a predetermined modulation factor per channel are given, a cavity length of the distributed-feedback laser satisfies a condition that a distortion is less than a predetermined distortion level and a carrier-to-noise ratio is more than a predetermined value based on a relation between transmission loss, number of channels, modulation factor per channel, and the cavity length of the distributed-feedback laser.
摘要翻译：半导体激光器模块包括分布反馈激光器。当给定预定的传输损耗，预定数量的通道和每个通道的预定调制因数时，分布反馈激光器的腔体长度满足失真小于预定失真电平和载波 - 基于传输损耗，通道数，每通道的调制系数和分布反馈激光器的腔长之间的关系，噪声比大于预定值。

5. 发明申请

US20130010822A1 VERTICAL LIGHT EMITTING DEVICE AND MANUFACTURING METHOD 有权
标题翻译：垂直发光装置及制造方法
公开(公告)号：US20130010822A1
公开(公告)日：2013-01-10
申请号：US13530255
申请日：2012-06-22
申请人： Toshihito SUZUKI , Keishi TAKAKI , Suguru IMAI , Yasumasa KAWAKITA
发明人： Toshihito SUZUKI , Keishi TAKAKI , Suguru IMAI , Yasumasa KAWAKITA
IPC分类号： H01L29/00 , H01L21/02
CPC分类号： H01S5/18327 , H01S5/18311 , H01S5/18333 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S2301/02 , H01S2301/166
摘要： Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.
摘要翻译：提供一种垂直发光装置，其包括彼此面对并且使光振荡的上部多层反射膜和下部多层反射膜; 形成在上层多层反射膜的下方的中间层，具有与上层多层反射膜不同的组成的层; 以及电极部，其形成为将所述中间层夹在与所述光的振荡方向平行的横截面中，并且具有高于所述中间层的顶面的顶端。在形成电极部以夹持中间层之后，将上部多层反射膜层叠在中间层上。

6. 发明授权

US08178364B2 Testing method of surface-emitting laser device and testing device thereof 有权
标题翻译：表面发射激光器件的测试方法及其测试装置
公开(公告)号：US08178364B2
公开(公告)日：2012-05-15
申请号：US12796225
申请日：2010-06-08
申请人： Koji Hiraiwa , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
发明人： Koji Hiraiwa , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
IPC分类号： H01L21/66 , H01L23/58 , G01R31/26 , G01R31/10
CPC分类号： G01J1/4228 , G01J2001/4247 , H01S5/0021 , H01S5/0208 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/423
摘要： A method of performing a wafer level burn-in test for a plurality of surface-emitting laser devices formed on a wafer includes causing a plurality of contact electrodes arranged in a same plane with a pitch same as that of the surface-emitting laser devices being electrically connected to each other to have contact with pad electrodes of the surface-emitting laser devices, respectively, and applying a current to second electrodes of the surface-emitting laser devices and the contact electrodes. The wafer level burn-in test is performed while heating the wafer at a predetermined temperature. Laser lights emitted from the surface-emitting laser devices are monitored during the wafer level burn-in test.
摘要翻译：对形成在晶片上的多个表面发射激光器件执行晶片级老化测试的方法包括：使与多个表面发射激光器件相同的平面上布置的多个接触电极相同，彼此电连接以分别与表面发射激光器件的焊盘电极接触，并且向表面发射激光器件和接触电极的第二电极施加电流。在以预定温度加热晶片的同时进行晶片级老化测试。在晶片级老化测试期间，监测从表面发射激光器件发射的激光。

7. 发明授权

US07881353B2 Surface emitting laser element array 有权
标题翻译：表面发射激光元件阵列
公开(公告)号：US07881353B2
公开(公告)日：2011-02-01
申请号：US12414610
申请日：2009-03-30
申请人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
发明人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
IPC分类号： H01S5/00
CPC分类号： H01S5/423 , H01S5/0422 , H01S5/18311 , H01S5/18341 , H01S5/18369 , H01S5/3054
摘要： Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.
摘要翻译：提供了一种低成本，高可靠性的表面发射激光元件阵列。表面发射激光元件阵列具有具有第一导电类型的半导体的衬底; 以及多个表面发射激光器元件，每个表面发射激光器元件在衬底之上具有夹在第一导电类型半导体层区域和第二导电类型半导体层区域之间并且设置在上反射镜和下反射镜之间的有源层，发射激光元件通过形成为具有到达衬底的深度的电分离结构彼此分离。第一导电类型半导体层区域布置在衬底和有源层之间。表面发射激光元件阵列还具有布置在衬底和第一导电类型半导体层区域之间的电流阻挡层; 以及分别连接到第一导电类型半导体层区域和第二导电类型半导体层区域并且布置在与衬底相对的电流阻挡层的一侧上的两个电极。

8. 发明申请

US20090245312A1 SURFACE EMITTING LASER ELEMENT ARRAY 有权
标题翻译：表面发射激光元件阵列
公开(公告)号：US20090245312A1
公开(公告)日：2009-10-01
申请号：US12414610
申请日：2009-03-30
申请人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
发明人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
IPC分类号： H01S5/183 , H01S5/00
CPC分类号： H01S5/423 , H01S5/0422 , H01S5/18311 , H01S5/18341 , H01S5/18369 , H01S5/3054
摘要： Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.
摘要翻译：提供了一种低成本，高可靠性的表面发射激光元件阵列。表面发射激光元件阵列具有具有第一导电类型的半导体的衬底; 以及多个表面发射激光器元件，每个表面发射激光器元件在衬底之上具有夹在第一导电类型半导体层区域和第二导电类型半导体层区域之间并且设置在上反射镜和下反射镜之间的有源层，发射激光元件通过形成为具有到达衬底的深度的电分离结构彼此分离。第一导电类型半导体层区域布置在衬底和有源层之间。表面发射激光元件阵列还具有布置在衬底和第一导电类型半导体层区域之间的电流阻挡层; 以及分别连接到第一导电类型半导体层区域和第二导电类型半导体层区域并且布置在与衬底相对的电流阻挡层的一侧上的两个电极。

9. 发明申请

US20080273569A1 SURFACE-EMITTING LASER DEVICE 审中-公开
标题翻译：表面发射激光器件
公开(公告)号：US20080273569A1
公开(公告)日：2008-11-06
申请号：US12166422
申请日：2008-07-02
申请人： Koji HIRAIWA , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
发明人： Koji HIRAIWA , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , H01S5/0014 , H01S5/0425 , H01S5/18388 , H01S5/423 , H01S2301/176
摘要： A VCSEL device includes a polyimide having a larger thickness (d1) on the surface of a semiconductor layer structure in a peripheral area 54, which is separated from a mesapost by an annular groove 52. The top surface of the central mesapost 30 is located at a lower position compared to the top surface of the peripheral area 54. A structure is obtained wherein the mesapost is not contacted by a jig or probe during handling the device in the test or assembly thereof.
摘要翻译： VCSEL器件包括在周边区域54中的半导体层结构的表面上具有较大厚度（d 1）的聚酰亚胺，该外围区域54通过环形槽52与介质隔离。与周边区域54的顶表面相比，中央台面30的上表面位于较低的位置。获得一种结构，其中在测试或组装中处理该装置期间，介质板不被夹具或探针接触。

10. 发明申请

US20080205463A1 METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE AND VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE 有权
标题翻译：制造垂直表面发射激光器件和垂直孔表面激光器件的方法
公开(公告)号：US20080205463A1
公开(公告)日：2008-08-28
申请号：US12029019
申请日：2008-02-11
申请人： Keishi TAKAKI , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
发明人： Keishi TAKAKI , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/183 , H01L21/02
CPC分类号： H01S5/18333 , H01S5/18311
摘要： A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.
摘要翻译：通过在包括活性层的多个半导体层上交替地生长AlAs层和含有III族元素X的厚度比在97:3和99:1之间的范围的XAs层来形成选择性氧化层。选择性氧化层被选择性地氧化以制造垂直腔表面发射激光器。

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