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1. 发明授权

US08494022B2 Surface emitting laser, surface emitting laser array, light source and optical module 有权
标题翻译：表面发射激光器，表面发射激光器阵列，光源和光学模块
公开(公告)号：US08494022B2
公开(公告)日：2013-07-23
申请号：US13075302
申请日：2011-03-30
申请人： Hitoshi Shimizu , Takeo Kageyama , Keishi Takaki , Norihiro Iwai
发明人： Hitoshi Shimizu , Takeo Kageyama , Keishi Takaki , Norihiro Iwai
IPC分类号： H01S5/00
CPC分类号： G02B6/4214 , G02B6/421 , H01S5/0014 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/06226 , H01S5/18311 , H01S5/18341 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/3215
摘要： A surface emitting laser is formed of a composition in which bandgap energy of layers from immediately above a current confinement layer to a second conductivity type contact layer is reduced towards the second conductivity type contact layer in a stacking direction, and a composition in which bandgap energy of layers from immediately below the current confinement layer to a first conductivity type contact layer is reduced towards the first conductivity type contact layer in a stacking direction while bypassing a quantum well layer or a quantum dot of an active layer, and includes a second conductivity type cladding layer including a material for reducing the mobility of carriers.
摘要翻译：表面发射激光器由其中紧邻电流限制层上方到第二导电类型接触层的层的带隙能量沿层叠方向朝向第二导电类型接触层减小的组合物形成，并且其中带隙能量从紧邻电流限制层下方到第一导电类型接触层的层沿叠层方向朝向第一导电类型接触层减少，同时旁路有源层的量子阱层或量子点，并且包括第二导电类型包层，其包括用于降低载流子迁移率的材料。

2. 发明申请

US20080205463A1 METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE AND VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE 有权
标题翻译：制造垂直表面发射激光器件和垂直孔表面激光器件的方法
公开(公告)号：US20080205463A1
公开(公告)日：2008-08-28
申请号：US12029019
申请日：2008-02-11
申请人： Keishi TAKAKI , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
发明人： Keishi TAKAKI , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/183 , H01L21/02
CPC分类号： H01S5/18333 , H01S5/18311
摘要： A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.
摘要翻译：通过在包括活性层的多个半导体层上交替地生长AlAs层和含有III族元素X的厚度比在97:3和99:1之间的范围的XAs层来形成选择性氧化层。选择性氧化层被选择性地氧化以制造垂直腔表面发射激光器。

3. 发明授权

US07888145B2 Method of manufacturing vertical-cavity surface-emitting laser device and vertical-cavity surface-emitting laser device 有权
标题翻译：制造垂直腔表面发射激光器件和垂直腔表面发射激光器件的方法
公开(公告)号：US07888145B2
公开(公告)日：2011-02-15
申请号：US12029019
申请日：2008-02-11
申请人： Keishi Takaki , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
发明人： Keishi Takaki , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01L21/00 , H01L27/15
CPC分类号： H01S5/18333 , H01S5/18311
摘要： A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.
摘要翻译：通过在包括活性层的多个半导体层上交替地生长AlAs层和含有III族元素X的厚度比在97:3和99:1之间的范围的XAs层来形成选择性氧化层。选择性氧化层被选择性地氧化以制造垂直腔表面发射激光器。

4. 发明授权

US07801198B2 Surface emitting laser element and method of fabricating the same 失效
标题翻译：表面发射激光元件及其制造方法
公开(公告)号：US07801198B2
公开(公告)日：2010-09-21
申请号：US12057538
申请日：2008-03-28
申请人： Takeo Kageyama , Norihiro Iwai , Yasumasa Kawakita , Keishi Takaki , Peter Nyakas
发明人： Takeo Kageyama , Norihiro Iwai , Yasumasa Kawakita , Keishi Takaki , Peter Nyakas
IPC分类号： H01S5/00
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/34306
摘要： A surface emitting laser element includes an active layer and a dielectric multilayer mirror formed with a plurality of dielectric layers having different refractive indices for reflecting a light generated in the active layer. At least one of boundaries between the dielectric layers is formed to have a predetermined surface roughness to obtain a desired target reflectance of the dielectric multilayer mirror.
摘要翻译：表面发射激光器元件包括有源层和形成有多个具有不同折射率的电介质层的电介质多层反射镜，用于反射在有源层中产生的光。电介质层之间的边界中的至少一个形成为具有预定的表面粗糙度以获得电介质多层反射镜的所需目标反射率。

5. 发明申请

US20080240192A1 SURFACE EMITTING LASER ELEMENT AND METHOD OF FABRICATING THE SAME 失效
标题翻译：表面发射激光元件及其制造方法
公开(公告)号：US20080240192A1
公开(公告)日：2008-10-02
申请号：US12057538
申请日：2008-03-28
申请人： Takeo KAGEYAMA , Norihiro Iwai , Yasumasa Kawakita , Keishi Takaki , Peter Nyakas
发明人： Takeo KAGEYAMA , Norihiro Iwai , Yasumasa Kawakita , Keishi Takaki , Peter Nyakas
IPC分类号： H01S5/18 , H01L33/00
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/34306
摘要： A surface emitting laser element includes an active layer and a dielectric multilayer mirror formed with a plurality of dielectric layers having different refractive indices for reflecting a light generated in the active layer. At least one of boundaries between the dielectric layers is formed to have a predetermined surface roughness to obtain a desired target reflectance of the dielectric multilayer mirror.
摘要翻译：表面发射激光器元件包括有源层和形成有多个具有不同折射率的电介质层的电介质多层反射镜，用于反射在有源层中产生的光。电介质层之间的边界中的至少一个形成为具有预定的表面粗糙度以获得电介质多层反射镜的所需目标反射率。

6. 发明授权

US07418020B2 Surface emitting laser device 有权
标题翻译：表面发射激光器件
公开(公告)号：US07418020B2
公开(公告)日：2008-08-26
申请号：US11554973
申请日：2006-10-31
申请人： Koji Hiraiwa , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
发明人： Koji Hiraiwa , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/0014 , H01S5/0425 , H01S5/18388 , H01S5/423 , H01S2301/176
摘要： A VCSEL device includes a polyimide having a larger thickness (d1) on the surface of a semiconductor layer structure in a peripheral area 54, which is separated from a mesapost by an annular groove 52. The top surface of the central mesapost 30 is located at a lower position compared to the top surface of the peripheral area 54. A structure is obtained wherein the mesapost is not contacted by a jig or probe during handling the device in the test or assembly thereof.
摘要翻译： VCSEL器件包括在周边区域54中的半导体层结构的表面上具有较大厚度（d 1）的聚酰亚胺，该外围区域54通过环形槽52与介质隔离。与周边区域54的顶表面相比，中央台面30的上表面位于较低的位置。获得一种结构，其中在测试或组装中处理该装置期间，介质板不被夹具或探针接触。

7. 发明授权

US08178364B2 Testing method of surface-emitting laser device and testing device thereof 有权
标题翻译：表面发射激光器件的测试方法及其测试装置
公开(公告)号：US08178364B2
公开(公告)日：2012-05-15
申请号：US12796225
申请日：2010-06-08
申请人： Koji Hiraiwa , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
发明人： Koji Hiraiwa , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
IPC分类号： H01L21/66 , H01L23/58 , G01R31/26 , G01R31/10
CPC分类号： G01J1/4228 , G01J2001/4247 , H01S5/0021 , H01S5/0208 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/423
摘要： A method of performing a wafer level burn-in test for a plurality of surface-emitting laser devices formed on a wafer includes causing a plurality of contact electrodes arranged in a same plane with a pitch same as that of the surface-emitting laser devices being electrically connected to each other to have contact with pad electrodes of the surface-emitting laser devices, respectively, and applying a current to second electrodes of the surface-emitting laser devices and the contact electrodes. The wafer level burn-in test is performed while heating the wafer at a predetermined temperature. Laser lights emitted from the surface-emitting laser devices are monitored during the wafer level burn-in test.
摘要翻译：对形成在晶片上的多个表面发射激光器件执行晶片级老化测试的方法包括：使与多个表面发射激光器件相同的平面上布置的多个接触电极相同，彼此电连接以分别与表面发射激光器件的焊盘电极接触，并且向表面发射激光器件和接触电极的第二电极施加电流。在以预定温度加热晶片的同时进行晶片级老化测试。在晶片级老化测试期间，监测从表面发射激光器件发射的激光。

8. 发明授权

US07881353B2 Surface emitting laser element array 有权
标题翻译：表面发射激光元件阵列
公开(公告)号：US07881353B2
公开(公告)日：2011-02-01
申请号：US12414610
申请日：2009-03-30
申请人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
发明人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
IPC分类号： H01S5/00
CPC分类号： H01S5/423 , H01S5/0422 , H01S5/18311 , H01S5/18341 , H01S5/18369 , H01S5/3054
摘要： Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.
摘要翻译：提供了一种低成本，高可靠性的表面发射激光元件阵列。表面发射激光元件阵列具有具有第一导电类型的半导体的衬底; 以及多个表面发射激光器元件，每个表面发射激光器元件在衬底之上具有夹在第一导电类型半导体层区域和第二导电类型半导体层区域之间并且设置在上反射镜和下反射镜之间的有源层，发射激光元件通过形成为具有到达衬底的深度的电分离结构彼此分离。第一导电类型半导体层区域布置在衬底和有源层之间。表面发射激光元件阵列还具有布置在衬底和第一导电类型半导体层区域之间的电流阻挡层; 以及分别连接到第一导电类型半导体层区域和第二导电类型半导体层区域并且布置在与衬底相对的电流阻挡层的一侧上的两个电极。

9. 发明申请

US20090245312A1 SURFACE EMITTING LASER ELEMENT ARRAY 有权
标题翻译：表面发射激光元件阵列
公开(公告)号：US20090245312A1
公开(公告)日：2009-10-01
申请号：US12414610
申请日：2009-03-30
申请人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
发明人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
IPC分类号： H01S5/183 , H01S5/00
CPC分类号： H01S5/423 , H01S5/0422 , H01S5/18311 , H01S5/18341 , H01S5/18369 , H01S5/3054
摘要： Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.
摘要翻译：提供了一种低成本，高可靠性的表面发射激光元件阵列。表面发射激光元件阵列具有具有第一导电类型的半导体的衬底; 以及多个表面发射激光器元件，每个表面发射激光器元件在衬底之上具有夹在第一导电类型半导体层区域和第二导电类型半导体层区域之间并且设置在上反射镜和下反射镜之间的有源层，发射激光元件通过形成为具有到达衬底的深度的电分离结构彼此分离。第一导电类型半导体层区域布置在衬底和有源层之间。表面发射激光元件阵列还具有布置在衬底和第一导电类型半导体层区域之间的电流阻挡层; 以及分别连接到第一导电类型半导体层区域和第二导电类型半导体层区域并且布置在与衬底相对的电流阻挡层的一侧上的两个电极。

10. 发明申请

US20080273569A1 SURFACE-EMITTING LASER DEVICE 审中-公开
标题翻译：表面发射激光器件
公开(公告)号：US20080273569A1
公开(公告)日：2008-11-06
申请号：US12166422
申请日：2008-07-02
申请人： Koji HIRAIWA , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
发明人： Koji HIRAIWA , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , H01S5/0014 , H01S5/0425 , H01S5/18388 , H01S5/423 , H01S2301/176
摘要： A VCSEL device includes a polyimide having a larger thickness (d1) on the surface of a semiconductor layer structure in a peripheral area 54, which is separated from a mesapost by an annular groove 52. The top surface of the central mesapost 30 is located at a lower position compared to the top surface of the peripheral area 54. A structure is obtained wherein the mesapost is not contacted by a jig or probe during handling the device in the test or assembly thereof.
摘要翻译： VCSEL器件包括在周边区域54中的半导体层结构的表面上具有较大厚度（d 1）的聚酰亚胺，该外围区域54通过环形槽52与介质隔离。与周边区域54的顶表面相比，中央台面30的上表面位于较低的位置。获得一种结构，其中在测试或组装中处理该装置期间，介质板不被夹具或探针接触。

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