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1. 发明申请

US20110149399A1 ANTI-REFLECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：抗反射结构及其制造方法
公开(公告)号：US20110149399A1
公开(公告)日：2011-06-23
申请号：US12774650
申请日：2010-05-05
申请人： Lung-Han Peng , Han-Min Wu
发明人： Lung-Han Peng , Han-Min Wu
IPC分类号： G02B1/11
CPC分类号： G02B1/118 , G02B3/0056
摘要： The embodiment provides an antireflection structure and a method for fabricating the same. The antireflection structure includes a substrate having a plurality of protruding structures adjacent to one another, thereby allowing light to transmit through. And a dielectric structural layer covers a plurality of the protruding structures.
摘要翻译：本实施例提供一种抗反射结构及其制造方法。防反射结构包括具有彼此相邻的多个突出结构的基板，从而允许光透过。并且介电结构层覆盖多个突出结构。

2. 发明申请

US20090026471A1 LIGHT-SCATTERING STRUCTURE, LIGHT EMITTING DEVICE COMPRISING THE SAME AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：光散射结构，包含该发光结构的发光装置及其形成方法
公开(公告)号：US20090026471A1
公开(公告)日：2009-01-29
申请号：US11829651
申请日：2007-07-27
申请人： Han-Min Wu , Lung-Han Peng
发明人： Han-Min Wu , Lung-Han Peng
IPC分类号： H01L33/00 , G02F1/1335 , H01S5/00
CPC分类号： G02B5/0278 , G02B5/0221 , G02B5/0268 , G02F2001/133607 , H01L33/22 , H01L2933/0091 , H01S5/005 , H01S5/026 , H01S5/0267
摘要： A light-scattering structure with micron-scale or submicron-scale protruding portions is provided to improve the light extraction efficiency of light emitting devices. The protruding portions function as scattering sites and can be assembled closely. A method of forming a light-scattering structure is also provided, wherein all the conventional substrate materials can be used for the substrate of the light-scattering structure, and scattering sites of submicron-scale, micron-scale or larger size can be fabricated.
摘要翻译：提供具有微米级或亚微米级突出部分的光散射结构，以提高发光器件的光提取效率。突出部分作为散射部位起作用，可以紧密组合。还提供了一种形成光散射结构的方法，其中所有常规基板材料都可用于光散射结构的基板，并且可以制造亚微米级，微米级或更大尺寸的散射位置。

3. 发明授权

US08981373B1 White LED 有权
标题翻译：白色LED
公开(公告)号：US08981373B1
公开(公告)日：2015-03-17
申请号：US14146097
申请日：2014-01-02
申请人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
发明人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
IPC分类号： H01L21/02 , H01L33/08 , H01L33/28 , H01L33/32 , H01L33/34
CPC分类号： H01L33/08 , H01L33/26 , H01L33/32
摘要： A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer.
摘要翻译：提供白色LED。白色LED包括P型层，隧道结构，N型层，N型电极和P型电极。隧道结构设置在P型层上。隧道结构包括第一阻挡层，有源层和第二阻挡层。第一阻挡层包括第一金属氧化物层。有源层包括第二金属氧化物层。第二阻挡层包括第三金属氧化物层。 N型层设置在隧道结构之上。 N型电极和P型电极分别与N型层和P型层接触。第二金属氧化物层的能隙低于第一金属氧化物层的能隙，并且低于第三金属氧化物层的能隙。

4. 发明授权

US08487325B2 Light emitting diode with large viewing angle and fabricating method thereof 有权
标题翻译：具有大视角的发光二极管及其制造方法
公开(公告)号：US08487325B2
公开(公告)日：2013-07-16
申请号：US13351648
申请日：2012-01-17
申请人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
发明人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/20 , H01L33/0012 , H01L33/0062 , H01L2224/45139 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.
摘要翻译：发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。这些柱结构形成在基板上。每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。在基板上形成第一类型的半导体层。柱结构通过第一类型半导体层彼此电连接。填料结构形成在柱结构之间。柱结构的填充结构和第二类型半导体层被透明导电层覆盖。第一电极与透明导电层接触。第二电极与第一类型半导体层接触。

5. 发明授权

US07253061B2 Method of forming a gate insulator in group III-V nitride semiconductor devices 有权
标题翻译：在III-V族氮化物半导体器件中形成栅极绝缘体的方法
公开(公告)号：US07253061B2
公开(公告)日：2007-08-07
申请号：US11005193
申请日：2004-12-06
申请人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
IPC分类号： H01L21/336
CPC分类号： H01L21/02241 , H01L21/02258 , H01L21/02337 , H01L21/3143 , H01L21/31679 , H01L29/78681
摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.
摘要翻译：在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓并进行快速热退火处理。光辅助电化学方法在约5.5和7.5之间的pH下使用包括缓冲CH 3 COOH的电解质浴。快速热退火工艺在O 2 O 2环境中在约500℃至800℃的温度下进行。

6. 发明授权

US06190508B1 Method of oxidizing nitride material enhanced by illumination with UV light at room temperature 失效
标题翻译：通过在室温下用紫外光照射而增强氮化物材料的方法
公开(公告)号：US06190508B1
公开(公告)日：2001-02-20
申请号：US09287326
申请日：1999-04-07
申请人： Lung-Han Peng , Yi-Chien Hsu , Chin-Yuan Chen , Jin-Kuo Ho , Chao-Nien Huang
发明人： Lung-Han Peng , Yi-Chien Hsu , Chin-Yuan Chen , Jin-Kuo Ho , Chao-Nien Huang
IPC分类号： C01B2100
CPC分类号： C01G1/02 , C01B13/324 , C01P2002/72
摘要： A method of forming oxide from nitride, in which the oxidation is enhanced by illuminating the nitride material with UV light. This method produces a rapid growth of oxide and allows for the monitoring of the oxide thickness in situ. The method comprises the steps of (i) placing the nitride material on an illuminating holder; (ii) dipping the nitride material and the illuminating holder in an electrolyte; and (iii) illuminating the nitride material with a light having an energy larger than the energy gap of the nitride material. The nitride material can be connected to a conductive electrode located in the electrolyte via a galvanometer to monitor a photo current generated by the oxidation of the nitride material so as to monitor the thickness of the oxide formed on the nitride material in situ. A metal coating can be coated on the nitride material to define the oxide forming region. The pH value of the electrolyte is in a range of approximately 3 to 10, and is preferably about 3.5.
摘要翻译：从氮化物形成氧化物的方法，其中通过用UV光照射氮化物材料来增强氧化。该方法产生氧化物的快速生长，并允许原位监测氧化物厚度。该方法包括以下步骤：（i）将氮化物材料放置在照明保持器上; （ii）将氮化物材料和照明保持器浸入电解质中; 和（iii）用能量大于氮化物材料的能隙的光来照射氮化物材料。氮化物材料可以经由电流计连接到位于电解质中的导电电极，以监测由氮化物材料的氧化产生的光电流，以便现场监测在氮化物材料上形成的氧化物的厚度。可以在氮化物材料上涂覆金属涂层以限定氧化物形成区域。电解液的pH值在约3〜10的范围内，优选为3.5左右。

7. 发明申请

US20120228655A1 LIGHT EMITTING DIODE WITH LARGE VIEWING ANGLE AND FABRICATING METHOD THEREOF 有权
标题翻译：具有大角度角度的发光二极管及其制造方法
公开(公告)号：US20120228655A1
公开(公告)日：2012-09-13
申请号：US13351648
申请日：2012-01-17
申请人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
发明人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
IPC分类号： H01L33/58 , H01L33/42
CPC分类号： H01L33/20 , H01L33/0012 , H01L33/0062 , H01L2224/45139 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.
摘要翻译：发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。这些柱结构形成在基板上。每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。在基板上形成第一类型的半导体层。柱结构通过第一类型半导体层彼此电连接。填料结构形成在柱结构之间。柱结构的填充结构和第二类型半导体层被透明导电层覆盖。第一电极与透明导电层接触。第二电极与第一类型半导体层接触。

8. 发明申请

US20110124203A1 Method of forming a gate insulator in group III-V nitride semiconductor devices 有权
公开(公告)号：US20110124203A1
公开(公告)日：2011-05-26
申请号：US12931361
申请日：2007-06-27
申请人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
IPC分类号： H01L21/31
CPC分类号： H01L21/02241 , H01L21/02258 , H01L21/02337 , H01L21/3143 , H01L21/31679 , H01L29/78681
摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

9. 发明授权

US07022597B2 Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes 有权
标题翻译：制造氮化镓基透明导电氧化膜欧姆电极的方法
公开(公告)号：US07022597B2
公开(公告)日：2006-04-04
申请号：US10892180
申请日：2004-07-16
申请人： Lung-Han Peng , Han-Ming Wu , Sung-Li Wang , Chia-Wei Chang , Chin-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Sung-Li Wang , Chia-Wei Chang , Chin-Yi Lin
IPC分类号： H01L21/44
CPC分类号： H01L33/42 , H01L33/32
摘要： A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.
摘要翻译：一种制造氮化镓基透明导电氧化膜欧姆电极的方法包括在GaN层上形成透明导电膜，通过离子在GaN层的表面上的透明导电膜上形成具有相反电特性的透明导电异质结扩散工艺，并在后续制造操作中在布线工艺的透明导电异质结表面上铺设金属厚膜。因此，通过离子扩散过程中的电子和空穴隧穿效应，可以改善异质结的费米能级以形成欧姆接触电极。

10. 发明申请

US20110116519A1 APPARATUS AND METHOD FOR CONVERTING LASER ENERGY 审中-公开
标题翻译：用于转换激光能量的装置和方法
公开(公告)号：US20110116519A1
公开(公告)日：2011-05-19
申请号：US12720162
申请日：2010-03-09
申请人： Lung-Han Peng , Chih-Ming Lai , I-Ning Hu , Ying-Yao Lai , Chu-Hsuan Haung
发明人： Lung-Han Peng , Chih-Ming Lai , I-Ning Hu , Ying-Yao Lai , Chu-Hsuan Haung
IPC分类号： H01S3/10
CPC分类号： H01S3/1083 , G02F1/3532 , G02F1/39 , G02F2001/3546 , G02F2001/3548
摘要： Provided are an apparatus and a method for converting laser energy, characterized by employing an optical parametric oscillator for converting light of a green laser wavelength into light of a blue or red laser wavelength via a phase matching structure, by means of a non-linear optical crystal having a one-dimensional quasi-phase matching structure with a single grating period under appropriately-controlled temperature conditions. The non-linear optical crystal with the single grating period facilitates optical parametric oscillation and second harmonic generation to thereby enable green-to-blue wavelength conversion with a slope efficiency greater than 20%. Under 400 mW green light pump laser action, a periodically poled LiTaO3 crystal with a crystal length of 15 mm and without a resistant reflective plating film on its end face is capable of outputting a blue light laser beam of 56 mW.
摘要翻译：提供了一种用于转换激光能量的装置和方法，其特征在于采用光学参量振荡器，通过相位匹配结构，通过非线性光学器件将绿色激光波长的光转换成蓝色或红色激光波长的光晶体具有在适当控制的温度条件下具有单个光栅周期的一维准相位匹配结构。具有单光栅周期的非线性光学晶体便于光参量振荡和二次谐波产生，从而使得斜率效率大于20％的绿 - 蓝波长转换成为可能。在400mW绿光泵浦激光作用下，晶体长度为15mm的周期极化的LiTaO3晶体在其端面上没有耐反射镀膜，能够输出56mW的蓝光激光束。

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