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1. 发明授权

US06190508B1 Method of oxidizing nitride material enhanced by illumination with UV light at room temperature 失效
标题翻译：通过在室温下用紫外光照射而增强氮化物材料的方法
公开(公告)号：US06190508B1
公开(公告)日：2001-02-20
申请号：US09287326
申请日：1999-04-07
申请人： Lung-Han Peng , Yi-Chien Hsu , Chin-Yuan Chen , Jin-Kuo Ho , Chao-Nien Huang
发明人： Lung-Han Peng , Yi-Chien Hsu , Chin-Yuan Chen , Jin-Kuo Ho , Chao-Nien Huang
IPC分类号： C01B2100
CPC分类号： C01G1/02 , C01B13/324 , C01P2002/72
摘要： A method of forming oxide from nitride, in which the oxidation is enhanced by illuminating the nitride material with UV light. This method produces a rapid growth of oxide and allows for the monitoring of the oxide thickness in situ. The method comprises the steps of (i) placing the nitride material on an illuminating holder; (ii) dipping the nitride material and the illuminating holder in an electrolyte; and (iii) illuminating the nitride material with a light having an energy larger than the energy gap of the nitride material. The nitride material can be connected to a conductive electrode located in the electrolyte via a galvanometer to monitor a photo current generated by the oxidation of the nitride material so as to monitor the thickness of the oxide formed on the nitride material in situ. A metal coating can be coated on the nitride material to define the oxide forming region. The pH value of the electrolyte is in a range of approximately 3 to 10, and is preferably about 3.5.
摘要翻译：从氮化物形成氧化物的方法，其中通过用UV光照射氮化物材料来增强氧化。该方法产生氧化物的快速生长，并允许原位监测氧化物厚度。该方法包括以下步骤：（i）将氮化物材料放置在照明保持器上; （ii）将氮化物材料和照明保持器浸入电解质中; 和（iii）用能量大于氮化物材料的能隙的光来照射氮化物材料。氮化物材料可以经由电流计连接到位于电解质中的导电电极，以监测由氮化物材料的氧化产生的光电流，以便现场监测在氮化物材料上形成的氧化物的厚度。可以在氮化物材料上涂覆金属涂层以限定氧化物形成区域。电解液的pH值在约3〜10的范围内，优选为3.5左右。

2. 发明授权

US07061110B2 Ohmic contact to semiconductor devices and method of manufacturing the same 有权
标题翻译：与半导体器件的欧姆接触及其制造方法
公开(公告)号：US07061110B2
公开(公告)日：2006-06-13
申请号：US09388265
申请日：1999-09-01
申请人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
发明人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
IPC分类号： H01L23/48
CPC分类号： H01L33/40
摘要： An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.
摘要翻译：公开了半导体的欧姆接触及其制造方法。本发明提供一种低电阻率的欧姆接触，从而提高半导体器件的性能和可靠性。该欧姆接触通过首先在半导体材料上涂覆过渡金属和贵金属来形成; 然后在氧化环境中对过渡金属和贵金属进行热处理以氧化过渡金属。换句话说，该欧姆接触主要包括过渡金属氧化物和贵金属。膜中的氧化物可以是单一氧化物，或各种氧化物的混合物，或各种氧化物的固溶体。膜的金属可以是单一金属，或各种金属或其合金。膜的结构可以是混合物或层压体或多层包括氧化物和金属。层结构包括至少一个氧化物层和一个金属层，其中至少一个氧化物层与半导体接触。

3. 发明授权

US06319808B1 Ohmic contact to semiconductor devices and method of manufacturing the same 有权
标题翻译：与半导体器件的欧姆接触及其制造方法
公开(公告)号：US06319808B1
公开(公告)日：2001-11-20
申请号：US09325240
申请日：1999-06-03
申请人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
发明人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
IPC分类号： H01L2144
CPC分类号： H01L33/40
摘要： An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.
摘要翻译：公开了半导体的欧姆接触及其制造方法。本发明提供一种低电阻率的欧姆接触，从而提高半导体器件的性能和可靠性。该欧姆接触通过首先在半导体材料上涂覆过渡金属和贵金属来形成; 然后在氧化环境中对过渡金属和贵金属进行热处理以氧化过渡金属。换句话说，该欧姆接触主要包括过渡金属氧化物和贵金属。膜中的氧化物可以是单一氧化物，或各种氧化物的混合物，或各种氧化物的固溶体。膜的金属可以是单一金属，或各种金属或其合金。膜的结构可以是混合物或层压体或多层包括氧化物和金属。层结构包括至少一个氧化物层和一个金属层，其中至少一个氧化物层与半导体接触。

4. 发明授权

US5895223A Method for etching nitride 失效
标题翻译：蚀刻氮化物的方法
公开(公告)号：US5895223A
公开(公告)日：1999-04-20
申请号：US988301
申请日：1997-12-10
申请人： Lung-Han Peng , Chih-Wei Chuang , Jin-Kuo Ho , Chin-Yuan Chen
发明人： Lung-Han Peng , Chih-Wei Chuang , Jin-Kuo Ho , Chin-Yuan Chen
IPC分类号： H01L21/311 , H01L21/318 , H01L21/302
CPC分类号： H01L21/31111 , H01L21/3185
摘要： A method for etching nitride is provided, by which the etching rate and the roughness of the etching surface can be powerfully controlled, and by which the etching depth can be in-situ monitored. The etching method comprises the steps of: (i) coating a first electrode on a nitride chip; (ii) mounting the nitride chip on a holding device; (iii)dipping the holding device, the nitride chip and the first electrode in electrolysis liquid; (iv) irradiating the nitride chip with a UV light having a wavelength shorter than 254 nm; and (v) connecting the first electrode to a second electrode dipped in the electrolysis liquid by a galvanometer to in-situ monitor the etching current, so as to in-situ control the etching depth.
摘要翻译：提供了一种蚀刻氮化物的方法，通过该方法可以有效地控制蚀刻表面的蚀刻速率和粗糙度，并且可以原位监测蚀刻深度。蚀刻方法包括以下步骤：（i）在氮化物芯片上涂覆第一电极; （ii）将氮化物芯片安装在保持装置上; （iii）将保持装置，氮化物片和第一电极浸入电解液中; （iv）用波长短于254nm的UV光照射氮化物芯片; 和（v）通过电流计将第一电极连接到浸入电解液中的第二电极，以便原位监测蚀刻电流，从而原位控制蚀刻深度。

5. 发明授权

US06373875B1 Semiconductor laser structure with an increased catastrophic optical damage level 失效
标题翻译：半导体激光器结构具有增加的灾难性光学损伤水平
公开(公告)号：US06373875B1
公开(公告)日：2002-04-16
申请号：US09383757
申请日：1999-08-26
申请人： Yuan-Chen Yu , Chien-Chia Chiu , Jin-Kuo Ho
发明人： Yuan-Chen Yu , Chien-Chia Chiu , Jin-Kuo Ho
IPC分类号： H01S500
CPC分类号： H01S5/22 , H01S5/168 , H01S5/2205
摘要： A semiconductor laser structure is provided, which has an increased catastrophic optical damage (COD) level that allows the laser diode to have an increased life time of use. This semiconductor laser structure is characterized in the forming of a current-blocking structure proximate to the facets of the laser diode, which can help reduce the injected current into the facets, thereby increasing the COD level of the resulted laser diode. As a result, the resulted laser diode can operate at a high output power and nonetheless have an increased life time of use. Moreover, the forming of the current-blocking layers proximate to the facets can be performed simply by incorporating an additional photomask step in the fabrication without having equipment such as epitaxial equipment or vacuum equipment in the case of the prior art.
摘要翻译：提供了一种半导体激光器结构，其具有增加的灾难性光学损伤（COD）水平，允许激光二极管具有延长的使用寿命。该半导体激光器结构的特征在于在激光二极管的小面附近形成电流阻挡结构，这有助于减小注入到刻面中的电流，从而增加所得到的激光二极管的COD水平。结果，所得到的激光二极管可以以高输出功率工作，并且具有延长的使用寿命。此外，在现有技术的情况下，可以简单地通过在制造中并入附加的光掩模步骤而不用诸如外延设备或真空设备的设备来执行电流阻挡层的形成。

6. 发明授权

US06174747B1 Method of fabricating ridge waveguide semiconductor light-emitting device 有权
标题翻译：脊波导半导体发光器件的制造方法
公开(公告)号：US06174747B1
公开(公告)日：2001-01-16
申请号：US09281009
申请日：1999-03-30
申请人： Jin-Kuo Ho , Chienchia Chiu , Chenn-Shiung Cheng , Tse-Jun Chen
发明人： Jin-Kuo Ho , Chienchia Chiu , Chenn-Shiung Cheng , Tse-Jun Chen
IPC分类号： H01L2100
CPC分类号： H01S5/22 , H01L27/156 , H01S5/0421 , H01S5/0425 , H01S5/2081 , H01S5/2231
摘要： A method of fabricating a ridge waveguide semiconductor light-emitting device is provided in which an oxide semiconductor having a heavy carrier concentration serves as the interface of the metal layer and the epitaxial layer to make the current flow through the ridge waveguide. This invention forms an oxide semiconductor having a heavy carrier concentration thereon after finishing the basic structure of a ridge waveguide semiconductor light-emitting device, then forms a metal layer to conduct current. Since the carrier concentration at the surface of the ridge waveguide is higher than that at the inner portion, the current primarily flows through the interface of the oxide semiconductor having a heavy carrier concentration and the vertex of the ridge waveguide. Thus the current is restricted to only flow through the vertex of the ridge waveguide.
摘要翻译：提供一种制造脊波导半导体发光器件的方法，其中具有重载流子浓度的氧化物半导体用作金属层和外延层的界面，以使电流流过脊波导。本发明在完成脊形波导半导体发光器件的基本结构之后形成其载流子浓度较高的氧化物半导体，然后形成金属层以传导电流。由于脊波导表面的载流子浓度高于内部部分的载流子浓度，所以电流主要流过具有重载流子浓度的氧化物半导体和脊波导的顶点的界面。因此，电流仅限于仅流过脊波导的顶点。

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