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1. 发明申请

US20120228655A1 LIGHT EMITTING DIODE WITH LARGE VIEWING ANGLE AND FABRICATING METHOD THEREOF 有权
标题翻译：具有大角度角度的发光二极管及其制造方法
公开(公告)号：US20120228655A1
公开(公告)日：2012-09-13
申请号：US13351648
申请日：2012-01-17
申请人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
发明人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
IPC分类号： H01L33/58 , H01L33/42
CPC分类号： H01L33/20 , H01L33/0012 , H01L33/0062 , H01L2224/45139 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.
摘要翻译：发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。这些柱结构形成在基板上。每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。在基板上形成第一类型的半导体层。柱结构通过第一类型半导体层彼此电连接。填料结构形成在柱结构之间。柱结构的填充结构和第二类型半导体层被透明导电层覆盖。第一电极与透明导电层接触。第二电极与第一类型半导体层接触。

2. 发明授权

US08487325B2 Light emitting diode with large viewing angle and fabricating method thereof 有权
标题翻译：具有大视角的发光二极管及其制造方法
公开(公告)号：US08487325B2
公开(公告)日：2013-07-16
申请号：US13351648
申请日：2012-01-17
申请人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
发明人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/20 , H01L33/0012 , H01L33/0062 , H01L2224/45139 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.
摘要翻译：发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。这些柱结构形成在基板上。每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。在基板上形成第一类型的半导体层。柱结构通过第一类型半导体层彼此电连接。填料结构形成在柱结构之间。柱结构的填充结构和第二类型半导体层被透明导电层覆盖。第一电极与透明导电层接触。第二电极与第一类型半导体层接触。

3. 发明申请

US20060092174A1 Color noise suppressing system 审中-公开
标题翻译：彩色噪声抑制系统
公开(公告)号：US20060092174A1
公开(公告)日：2006-05-04
申请号：US11208602
申请日：2005-08-23
申请人： Chen Yen Lin
发明人： Chen Yen Lin
IPC分类号： G09G5/02
CPC分类号： H04N9/70
摘要： A color noise suppressing system, which has a converter, a saturation compute device, a maximum compute device, and a chroma suppressor. The converter converts a YUV image signal into an RGB image signal. The saturation compute device is connected to the converter for computing a saturation from the RGB image signal and converting the saturation into a first gain. The maximum compute device is connected to the converter for computing a maximum from the RGB image signal and converting the maximum into a second gain. The chroma suppressor is connected to the saturation compute device and the maximum compute device for performing chroma suppression on the YUV image signal according to the first and second gains.
摘要翻译：一种具有转换器，饱和度计算装置，最大计算装置和色度抑制器的彩色噪声抑制系统。该转换器将YUV图像信号转换为RGB图像信号。饱和度计算设备连接到转换器，用于从RGB图像信号计算饱和度并将饱和度转换为第一增益。最大计算设备连接到转换器，用于从RGB图像信号计算最大值，并将最大值转换为第二增益。色度抑制器连接到饱和度计算设备和最大计算设备，用于根据第一和第二增益在YUV图像信号上执行色度抑制。

4. 发明授权

US06866530B1 Memory card connector 失效
标题翻译：存储卡连接器
公开(公告)号：US06866530B1
公开(公告)日：2005-03-15
申请号：US10813022
申请日：2004-03-31
申请人： Chen Yen-Lin
发明人： Chen Yen-Lin
IPC分类号： H01R12/16 , H01R13/62
CPC分类号： H01R12/83
摘要： A memory card connector for mounting on a printed circuit board to electrically connect with a memory card, includes an insulative housing being generally a flat cuboid with a lower wall and three side walls thereby defining a receiving space with an opening end. A plurality of receiving grooves is defined in the lower wall. A plurality of terminals is received in the receiving grooves of the housing. Each terminal has a contact portion, an interferential portion and a soldering portion. The soldering portion is located at the opening end of the housing. The contact portion is away from the opening end of the housing and slightly projects from the receiving groove. A shielding plate is covered on the housing. The shielding plate and the lower wall receiving the contact portions of the terminals cooperatively define an insertion slot. Whereby the memory card connector electrically connects with the memory card through slantwise inserting the memory card thereto and then rotating the memory card to be received in the receiving space of the housing and to press against the terminals.
摘要翻译：用于安装在印刷电路板上以与存储卡电连接的存储卡连接器包括绝缘壳体，其通常为具有下壁和三个侧壁的扁平长方体，从而限定具有开口端的容纳空间。在下壁中限定多个接收槽。多个端子被容纳在壳体的接收槽中。每个端子具有接触部分，干涉部分和焊接部分。焊接部分位于壳体的开口端。接触部分远离壳体的开口端并从接收槽略微突出。屏蔽板被覆盖在外壳上。接收端子的接触部分的屏蔽板和下壁协调地限定插入槽。存储卡连接器通过将存储卡向其中倾斜插入，然后旋转存储卡以将其接收在壳体的接收空间中并且压靠端子而与存储卡电连接。

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