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1. 再颁专利

USRE42422E1 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：USRE42422E1
公开(公告)日：2011-06-07
申请号：US11724310
申请日：2007-03-15
申请人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
发明人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

2. 发明授权

US6163038A White light-emitting diode and method of manufacturing the same 失效
标题翻译：白色发光二极管及其制造方法
公开(公告)号：US6163038A
公开(公告)日：2000-12-19
申请号：US78882
申请日：1998-05-14
申请人： Chin-Yuan Chen , Chao-Nien Huang , Fei-Chang Hwang , Ming-Huang Hong , Eric G. Lean
发明人： Chin-Yuan Chen , Chao-Nien Huang , Fei-Chang Hwang , Ming-Huang Hong , Eric G. Lean
IPC分类号： H01L33/06 , H01L33/08 , H01L33/12 , H01L33/32 , H01L33/50 , H01L33/00
CPC分类号： H01L33/08 , H01L33/06 , H01L33/32
摘要： A white light-emitting diode and a method of fabricating the same diode are disclosed. The white light-emitting diode is fabricated by epitaxy, which can produce two peaks in the spectrum at the P-N junction by appropriately adjusting epitaxial parameters such as temperature, pressure, NH.sub.3 flux and the ratio of H.sub.2 to N.sub.2 or the concentration of dopant, such as Mg or Si. The diode can thus radiate white light by adjusting the wavelength and the intensity of the principal peak in the two peaks. Further, quantum well structure can be formed in the diode. By appropriately adjusting the epitaxial parameters, the spectrum of the quantum well structures may have more than one peak. Therefore, white light can be generated by combining the light with wavelengths at two or three different peaks. The white LED can radiate white light itself and need not involve combining many LEDs, so that the cost and the difficulty of fabricating the white LED lamp can be reduced. Moreover, the white LED can radiate white light itself, and does not need to excite fluorescent material to radiate white light. Accordingly, the lifetime of the white LED lamp is not limited by the relatively short lifetime of fluorescent material.
摘要翻译：公开了一种白色发光二极管及其制造方法。白色发光二极管是通过外延制造的，其可以通过适当调整外延参数，例如温度，压力，NH 3通量以及H 2与N 2的比例或掺杂剂的浓度，在PN结的光谱中产生两个峰，作为Mg或Si。因此，二极管可以通过调节两个峰中的主峰的波长和强度来辐射白光。此外，量子阱结构可以形成在二极管中。通过适当调整外延参数，量子阱结构的光谱可能具有多于一个峰。因此，可以通过将光与两个或三个不同峰的波长组合来产生白光。白色LED本身可以散发白光，不需要涉及多个LED的组合，从而可以降低制造白光LED灯的成本和难度。此外，白色LED可以自身辐射白光，不需要激发荧光材料来照射白光。因此，白色LED灯的寿命不受荧光材料寿命相对较短的限制。

3. 发明授权

US06972208B2 Method for manufacturing a light emitting diode having a transparent substrate 有权
标题翻译：一种具有透明基板的发光二极管的制造方法
公开(公告)号：US06972208B2
公开(公告)日：2005-12-06
申请号：US10709663
申请日：2004-05-21
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L21/00 , H01L21/20 , H01L21/8238 , H01L33/00 , H01L33/30 , H01L33/32
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

4. 发明授权

US06936860B2 Light emitting diode having an insulating substrate 有权
标题翻译：具有绝缘基板的发光二极管
公开(公告)号：US06936860B2
公开(公告)日：2005-08-30
申请号：US10063822
申请日：2002-05-16
申请人： Shu-Wen Sung , Chin-Fu Ku , Chia-Cheng Liu , Min-Hsun Hsieh , Chao-Nien Huang , Chen Ou , Chuan-Ming Chang
发明人： Shu-Wen Sung , Chin-Fu Ku , Chia-Cheng Liu , Min-Hsun Hsieh , Chao-Nien Huang , Chen Ou , Chuan-Ming Chang
IPC分类号： H01L21/28 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42 , H01L33/00 , H01L29/12
CPC分类号： H01L33/04 , H01L33/14 , H01L33/325
摘要： An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.
摘要翻译： LED包括绝缘基板; 位于所述绝缘基板上的缓冲层; 位于所述缓冲层上的n + + +型接触层，所述接触层具有第一表面和第二表面; 位于n +型接触层的第一表面上的n型覆层; 定位在n型包覆层上的发光层; 位于发光层上的p型覆层; 位于p型覆层上的p型接触层; 位于p型接触层上的n + H +型反向隧穿层; 位于n + +反向隧穿层上的p型透明欧姆接触电极; 以及位于n + +型接触层的第二表面上的n型透明欧姆接触电极。 p型透明欧姆接触电极和n型透明欧姆接触电极由相同的材料制成。

5. 发明申请

US20110220873A1 LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US20110220873A1
公开(公告)日：2011-09-15
申请号：US13114384
申请日：2011-05-24
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L33/04 , H01L33/16
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

6. 发明授权

US5874320A Method for forming P-type gallium nitride 失效
标题翻译：形成P型氮化镓的方法
公开(公告)号：US5874320A
公开(公告)日：1999-02-23
申请号：US893385
申请日：1997-07-11
申请人： Kwang-Kuo Shih , Chao-Nien Huang , Chin-Yuan Chen , Biing-Jye Lee , Ming-Huang Hong
发明人： Kwang-Kuo Shih , Chao-Nien Huang , Chin-Yuan Chen , Biing-Jye Lee , Ming-Huang Hong
IPC分类号： H01L21/205 , H01L21/223 , H01L21/324 , H01L21/326 , H01L33/32 , H01L21/22
CPC分类号： H01L33/325 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/2233 , H01L21/3245 , H01L21/326
摘要： A method for forming P-type gallium nitride is disclosed in the invention. In this method, Mg--H can be completly discomposed by use of an annealing process, thereby entirely dissociating the hydrogen atoms from the gallium nitride, while the nitrogen atoms are not dissociated from the gallium nitride. Therefore, the P-type gallium nitride having high conductivity is obtained and V.sub.N gap defects created in the gallium nitride do not occur. During the annealing process, nitrogen flux is added around the gallium nitride to prevent decomposition of the gallium nitride. The above-mentioned nitrogen flux can be generated by use of RF plasma, electron cyclotron resonance (ECR) or ion beam. Furthermore, since a forward current is provided across the P--N junction of the gallium nitride, the Mg--H inside the magnesium-doped gallium nitride can be decomposed by just increasing the temperature to 175.degree. C. Therefore, in the invention, when a diode structure is manufactured with gallium nitride, the hydrogen atoms can be dissociated from the gallium nitride in a low-temperature process, thereby activating the magnesium (acceptor), such that the conductivity of the P-type gallium nitride is further increased and V.sub.N gap defects caused by a high-temperature process are prevented.
摘要翻译：在本发明中公开了形成P型氮化镓的方法。在这种方法中，Mg-H可以通过使用退火工艺完全分解，从而完全解离氮原子上的氢原子，而氮原子不会离开氮化镓。因此，获得具有高导电性的P型氮化镓，并且不会发生在氮化镓中产生的VN间隙缺陷。在退火过程中，在氮化镓周围添加氮通量，以防止氮化镓分解。上述氮通量可以通过使用RF等离子体，电子回旋共振（ECR）或离子束来产生。此外，由于在氮化镓的PN结两端提供正向电流，所以通过将温度升高到175℃，镁掺杂氮化镓内部的Mg-H可以分解。因此，在本发明中，当二极管结构用氮化镓制造，在低温工艺中氢原子可以从氮化镓中解离，从而激活镁（受体），使得P型氮化镓的导电性进一步增加，VN间隙缺陷防止高温过程引起的。

7. 发明授权

US08344353B2 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US08344353B2
公开(公告)日：2013-01-01
申请号：US13114384
申请日：2011-05-24
申请人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
发明人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
IPC分类号： H01L29/06 , H01L31/072 , H01L31/019 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：本发明的一个实施例公开了一种包括发光层，非晶界面层和下电极的多层结构。发光层具有上侧，下侧和侧面。不是用于生长发光层的非晶界面层布置在下侧并且远离发光层。下电极布置在侧面并且电直接连接到非晶界面层。

8. 发明授权

US07061110B2 Ohmic contact to semiconductor devices and method of manufacturing the same 有权
标题翻译：与半导体器件的欧姆接触及其制造方法
公开(公告)号：US07061110B2
公开(公告)日：2006-06-13
申请号：US09388265
申请日：1999-09-01
申请人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
发明人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
IPC分类号： H01L23/48
CPC分类号： H01L33/40
摘要： An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.
摘要翻译：公开了半导体的欧姆接触及其制造方法。本发明提供一种低电阻率的欧姆接触，从而提高半导体器件的性能和可靠性。该欧姆接触通过首先在半导体材料上涂覆过渡金属和贵金属来形成; 然后在氧化环境中对过渡金属和贵金属进行热处理以氧化过渡金属。换句话说，该欧姆接触主要包括过渡金属氧化物和贵金属。膜中的氧化物可以是单一氧化物，或各种氧化物的混合物，或各种氧化物的固溶体。膜的金属可以是单一金属，或各种金属或其合金。膜的结构可以是混合物或层压体或多层包括氧化物和金属。层结构包括至少一个氧化物层和一个金属层，其中至少一个氧化物层与半导体接触。

9. 发明授权

US06319808B1 Ohmic contact to semiconductor devices and method of manufacturing the same 有权
标题翻译：与半导体器件的欧姆接触及其制造方法
公开(公告)号：US06319808B1
公开(公告)日：2001-11-20
申请号：US09325240
申请日：1999-06-03
申请人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
发明人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
IPC分类号： H01L2144
CPC分类号： H01L33/40
摘要： An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.
摘要翻译：公开了半导体的欧姆接触及其制造方法。本发明提供一种低电阻率的欧姆接触，从而提高半导体器件的性能和可靠性。该欧姆接触通过首先在半导体材料上涂覆过渡金属和贵金属来形成; 然后在氧化环境中对过渡金属和贵金属进行热处理以氧化过渡金属。换句话说，该欧姆接触主要包括过渡金属氧化物和贵金属。膜中的氧化物可以是单一氧化物，或各种氧化物的混合物，或各种氧化物的固溶体。膜的金属可以是单一金属，或各种金属或其合金。膜的结构可以是混合物或层压体或多层包括氧化物和金属。层结构包括至少一个氧化物层和一个金属层，其中至少一个氧化物层与半导体接触。

10. 发明授权

US06190508B1 Method of oxidizing nitride material enhanced by illumination with UV light at room temperature 失效
标题翻译：通过在室温下用紫外光照射而增强氮化物材料的方法
公开(公告)号：US06190508B1
公开(公告)日：2001-02-20
申请号：US09287326
申请日：1999-04-07
申请人： Lung-Han Peng , Yi-Chien Hsu , Chin-Yuan Chen , Jin-Kuo Ho , Chao-Nien Huang
发明人： Lung-Han Peng , Yi-Chien Hsu , Chin-Yuan Chen , Jin-Kuo Ho , Chao-Nien Huang
IPC分类号： C01B2100
CPC分类号： C01G1/02 , C01B13/324 , C01P2002/72
摘要： A method of forming oxide from nitride, in which the oxidation is enhanced by illuminating the nitride material with UV light. This method produces a rapid growth of oxide and allows for the monitoring of the oxide thickness in situ. The method comprises the steps of (i) placing the nitride material on an illuminating holder; (ii) dipping the nitride material and the illuminating holder in an electrolyte; and (iii) illuminating the nitride material with a light having an energy larger than the energy gap of the nitride material. The nitride material can be connected to a conductive electrode located in the electrolyte via a galvanometer to monitor a photo current generated by the oxidation of the nitride material so as to monitor the thickness of the oxide formed on the nitride material in situ. A metal coating can be coated on the nitride material to define the oxide forming region. The pH value of the electrolyte is in a range of approximately 3 to 10, and is preferably about 3.5.
摘要翻译：从氮化物形成氧化物的方法，其中通过用UV光照射氮化物材料来增强氧化。该方法产生氧化物的快速生长，并允许原位监测氧化物厚度。该方法包括以下步骤：（i）将氮化物材料放置在照明保持器上; （ii）将氮化物材料和照明保持器浸入电解质中; 和（iii）用能量大于氮化物材料的能隙的光来照射氮化物材料。氮化物材料可以经由电流计连接到位于电解质中的导电电极，以监测由氮化物材料的氧化产生的光电流，以便现场监测在氮化物材料上形成的氧化物的厚度。可以在氮化物材料上涂覆金属涂层以限定氧化物形成区域。电解液的pH值在约3〜10的范围内，优选为3.5左右。

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