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    • 5. 发明授权
    • Method and system for providing a self-aligned electrical contact for a TMR element
    • 用于为TMR元件提供自对准电接触的方法和系统
    • US06683763B1
    • 2004-01-27
    • US09990738
    • 2001-11-21
    • Hugh C. HinerKyusik SinWilliam JensenXizeng Shi
    • Hugh C. HinerKyusik SinWilliam JensenXizeng Shi
    • G11B5127
    • B82Y25/00B82Y10/00B82Y40/00G01R33/06G11B5/3909H01F10/3254H01F41/308H01L43/12
    • A method and structure for providing a tunneling magnetoresistive (TMR) element is disclosed. The method and structure include providing a TMR layer that includes a first magnetic layer, a second magnetic layer and a first insulating layer disposed between the first magnetic layer and the second magnetic layer. The method and structure also include providing a first material and a protective layer. The first material allows electrical contact to be made to the tunneling magnetoresistive layer and is disposed above the tunneling magnetoresistive layer. The first material is capable of being undercut by an plasma etch without exposing a portion of the tunneling magnetoresistive layer under a remaining portion of the first material. The second protective layer covers a portion of the tunneling magnetoresistive sensor and a portion of the first material. In one aspect, the method and structure also include providing a second material disposed between the tunneling magnetoresistive layer and the first material. The second material allows electrical contact to be made to the tunneling magnetoresistive layer and is resistant to removal by the plasma etch.
    • 公开了一种用于提供隧道磁阻(TMR)元件的方法和结构。 该方法和结构包括提供包括第一磁性层,第二磁性层和设置在第一磁性层和第二磁性层之间的第一绝缘层的TMR层。 该方法和结构还包括提供第一材料和保护层。 第一材料允许对隧道磁阻层进行电接触并且设置在隧道磁阻层之上。 第一种材料能够通过等离子体蚀刻而被切割,而不会在隧道磁阻层的一部分暴露在第一材料的剩余部分之下。 第二保护层覆盖隧道磁阻传感器的一部分和第一材料的一部分。 一方面,该方法和结构还包括提供设置在隧道磁阻层和第一材料之间的第二材料。 第二种材料允许对隧道磁阻层进行电接触,并且耐受等离子体蚀刻的去除。
    • 8. 发明授权
    • Method for providing pedestal-defined zero throat writer
    • 提供基座定义零喉作家的方法
    • US06785955B1
    • 2004-09-07
    • US09769060
    • 2001-01-23
    • Yingjian ChenHugh Craig HinerBenjamin ChenXizeng ShiKyusik Sin
    • Yingjian ChenHugh Craig HinerBenjamin ChenXizeng ShiKyusik Sin
    • H04R3100
    • G11B5/3967G11B5/3109Y10T29/49032Y10T29/49041Y10T29/49043Y10T29/49044Y10T29/49048Y10T29/49052Y10T29/49062
    • A method and system for providing a writer is disclosed. The method and system include providing a first pole, an insulator covering a portion of the first pole and a coil on the first insulator. The coil includes a plurality of turns. The method and system also include providing a second insulator covering the coil, providing a second pole on the second insulator and providing a write gap separating a portion of the first pole from a second portion of the second pole. A first portion of the second pole is coupled with the first pole. In one aspect, the method and system include providing a coil having a plurality of turns with a pitch of no more than 1.2 micrometers. In another aspect, the plurality of turns of the coil is provided using a hard mask layer on a photoresist layer. A portion of the hard mask layer and a portion of the photoresist layer define a plurality of spaces between the pluralities of turns of the coil. In another aspect, the writer is a pedestal defined zero throat writer. In this aspect, the first insulator has a depression therein and the coil is provided on the depression.
    • 公开了一种用于提供写入器的方法和系统。 该方法和系统包括提供第一极,覆盖第一极的一部分的绝缘体和第一绝缘体上的线圈。 线圈包括多个匝。 该方法和系统还包括提供覆盖线圈的第二绝缘体,在第二绝缘体上提供第二极,并提供将第一极的一部分与第二极的第二部分分开的写间隙。 第二极的第一部分与第一极耦合。 在一个方面,该方法和系统包括提供具有不超过1.2微米的间距的多个匝的线圈。 在另一方面,使用光致抗蚀剂层上的硬掩模层来提供线圈的多圈。 硬掩模层的一部分和光致抗蚀剂层的一部分在线圈的多圈之间限定多个空间。 在另一方面,作者是一个基座定义的零喉作家。 在这方面,第一绝缘体具有凹陷,线圈设置在凹部上。
    • 9. 发明授权
    • Shielded magnetic ram cells
    • 屏蔽磁性柱塞电池
    • US06888184B1
    • 2005-05-03
    • US10074394
    • 2002-02-11
    • Xizeng ShiMatthew GibbonsHua-Ching TongKyusik Sin
    • Xizeng ShiMatthew GibbonsHua-Ching TongKyusik Sin
    • G11C11/16H01L21/336H01L27/22
    • G11C11/16H01L27/222
    • A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically shielding the plurality of magnetic tunneling junctions. Each of the plurality of magnetic tunneling junctions includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. At least a portion of the plurality of shields have a high moment and a high permeability and are conductive. The plurality of shields are electrically isolated from the plurality of magnetic tunneling junctions. The plurality of magnetic tunneling junctions are between the plurality of shields.
    • 公开了一种在半导体衬底上制造的磁存储器。 该方法和系统包括多个磁性隧道结和用于磁屏蔽多个磁性隧道结的多个屏蔽。 多个磁隧道结中的每一个包括第一铁磁层,第二铁磁层和第一铁磁层与第二铁磁层之间的绝缘层。 多个屏蔽件的至少一部分具有高的力矩和高的磁导率并且是导电的。 多个屏蔽件与多个磁性隧道结电隔离。 多个磁隧道结在多个屏蔽之间。