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    • 1. 发明授权
    • Thin film transistor substrate and method for manufacturing the same
    • 薄膜晶体管基板及其制造方法
    • US08598581B2
    • 2013-12-03
    • US12434907
    • 2009-05-04
    • Jang-Soo KimJae-Hyoung YounSang-Soo KimDong-Gyu Kim
    • Jang-Soo KimJae-Hyoung YounSang-Soo KimDong-Gyu Kim
    • H01L33/00
    • H01L29/78633H01L27/124H01L27/1248
    • A method for manufacturing a thin film transistor array panel includes; forming a gate line including a gate electrode and a height increasing member on a substrate, forming a gate insulating layer on the gate line and the height increasing member, forming a semiconductor, a data line including a source electrode, and a drain electrode facing the source electrode and overlapping at least a portion of the height increasing member on the gate insulating layer, forming a first insulating layer on the gate insulating layer, a data line and the drain electrode, forming a light-blocking member on a portion of the first insulating layer corresponding to the gate line and the data line, forming a color filter in an area bound by the light-blocking member, forming a second insulating layer on the light-blocking member and the color filter, and patterning the second insulating layer, the light-blocking member or the color filter, and the first insulating layer to form a contact hole exposing a portion of the drain electrode aligned with the height increasing member.
    • 薄膜晶体管阵列板的制造方法包括: 在基板上形成包括栅电极和高度增加部件的栅极线,在栅极线和高度增加部件上形成栅绝缘层,形成半导体,包括源电极和漏电极的数据线, 并且在所述栅极绝缘层上与所述高度增加部件的至少一部分重叠,在所述栅极绝缘层上形成第一绝缘层,在所述栅极绝缘层上形成第一绝缘层,在所述栅极绝缘层上形成阻挡部件,在所述第一 对应于栅极线和数据线的绝缘层,在由阻光构件限定的区域中形成滤色器,在遮光构件和滤色器上形成第二绝缘层,并对第二绝缘层进行构图, 遮光构件或滤色器,以及第一绝缘层,以形成暴露与高度增加构件对准的漏电极的一部分的接触孔。
    • 9. 发明授权
    • Thin film transistor array panel and liquid crystal display including the panel
    • 薄膜晶体管阵列面板和液晶显示器包括面板
    • US07294854B2
    • 2007-11-13
    • US10525039
    • 2002-09-18
    • Sang-Soo KimDong-Gyu Kim
    • Sang-Soo KimDong-Gyu Kim
    • H01L29/04H01L31/036H01L31/0376H01L31/20
    • H01L27/124G02F1/136213G02F1/136286H01L27/1255
    • A gate wire including a gate line extending in a transverse direction and a gate electrode connected to the gate line is form on an insulating substrate. A storage capacitor wire including a storage capacitor electrode line extending in the transverse direction and a storage electrode connected to the storage capacitor electrode line and located at the edges of a pixel area is formed. A semiconductor layer is formed on a gate insulating film covering the gate wire and the storage capacitor wire. A data wire is formed on the gate insulating film or the semiconductor layer and includes a data line intersecting the gate line to define the pixel area, a source electrode connected to the data line and located on the semiconductor layer, a drain electrode formed on the semiconductor layer and located opposite the source electrode with respect to the gate electrode, and a first storage capacitor conductor overlapping the storage capacitor electrode via the gate insulating film to form a storage capacitor. A pixel electrode electrically connected to the drain electrode and the first storage capacitor conductor is formed on the protective layer covering the data wire.
    • 包括在横向延伸的栅极线和连接到栅极线的栅电极的栅极线形成在绝缘基板上。 形成包括在横向延伸的辅助电容电极线和与辅助电容电极线连接并位于像素区域的边缘的存储电极的保持电容配线。 在覆盖栅极线和保持电容配线的栅极绝缘膜上形成半导体层。 数据线形成在栅极绝缘膜或半导体层上,并且包括与栅极线相交以限定像素区域的数据线,连接到数据线并位于半导体层上的源电极,形成在栅极绝缘膜上的漏电极 半导体层,并且相对于栅极位于与源电极相对的位置;以及第一存储电容器导体,经由栅极绝缘膜与存储电容电极重叠,形成存储电容。 电连接到漏电极和第一辅助电容导体的像素电极形成在覆盖数据线的保护层上。