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    • 1. 发明授权
    • Thin film transistor substrate and method for manufacturing the same
    • 薄膜晶体管基板及其制造方法
    • US08598581B2
    • 2013-12-03
    • US12434907
    • 2009-05-04
    • Jang-Soo KimJae-Hyoung YounSang-Soo KimDong-Gyu Kim
    • Jang-Soo KimJae-Hyoung YounSang-Soo KimDong-Gyu Kim
    • H01L33/00
    • H01L29/78633H01L27/124H01L27/1248
    • A method for manufacturing a thin film transistor array panel includes; forming a gate line including a gate electrode and a height increasing member on a substrate, forming a gate insulating layer on the gate line and the height increasing member, forming a semiconductor, a data line including a source electrode, and a drain electrode facing the source electrode and overlapping at least a portion of the height increasing member on the gate insulating layer, forming a first insulating layer on the gate insulating layer, a data line and the drain electrode, forming a light-blocking member on a portion of the first insulating layer corresponding to the gate line and the data line, forming a color filter in an area bound by the light-blocking member, forming a second insulating layer on the light-blocking member and the color filter, and patterning the second insulating layer, the light-blocking member or the color filter, and the first insulating layer to form a contact hole exposing a portion of the drain electrode aligned with the height increasing member.
    • 薄膜晶体管阵列板的制造方法包括: 在基板上形成包括栅电极和高度增加部件的栅极线,在栅极线和高度增加部件上形成栅绝缘层,形成半导体,包括源电极和漏电极的数据线, 并且在所述栅极绝缘层上与所述高度增加部件的至少一部分重叠,在所述栅极绝缘层上形成第一绝缘层,在所述栅极绝缘层上形成第一绝缘层,在所述栅极绝缘层上形成阻挡部件,在所述第一 对应于栅极线和数据线的绝缘层,在由阻光构件限定的区域中形成滤色器,在遮光构件和滤色器上形成第二绝缘层,并对第二绝缘层进行构图, 遮光构件或滤色器,以及第一绝缘层,以形成暴露与高度增加构件对准的漏电极的一部分的接触孔。
    • 6. 发明授权
    • Thin film transistor array panel and method for manufacturing the same
    • 薄膜晶体管阵列面板及其制造方法
    • US07932522B2
    • 2011-04-26
    • US12254440
    • 2008-10-20
    • Jang-Soo KimJae-Hyoung YounSu-Hyoung Kang
    • Jang-Soo KimJae-Hyoung YounSu-Hyoung Kang
    • H01L33/00
    • G02F1/136209H01L27/1248
    • A thin film transistor panel includes a substrate, a gate line extending in a first direction on the substrate, a data line disposed on the substrate, the data line crossing the gate line with an insulation layer therebetween and extending in a second direction, a thin film transistor including a control terminal connected to the gate line, an input terminal connected to the data line, and an output terminal, a color filter disposed on the thin film transistor, the color filter having an opening corresponding to the output terminal of the thin film transistor, a light blocking member disposed in the opening of the color filter, the light blocking member exposing a first region of a first end portion of the output terminal of the thin film transistor and having an output terminal light blocking portion enclosing the circumference of the first region, and a pixel electrode disposed on the light blocking member and the color filter, the pixel electrode contacting the first region of the output terminal.
    • 薄膜晶体管面板包括衬底,在衬底上沿第一方向延伸的栅极线,设置在衬底上的数据线,与栅极线交叉并且在第二方向上延伸的绝缘层的数据线,薄的 薄膜晶体管,其包括连接到栅极线的控制端子,连接到数据线的输入端子和输出端子,设置在薄膜晶体管上的滤色器,滤色器具有对应于薄膜晶体管的输出端子的开口 薄膜晶体管,设置在滤色器的开口中的遮光部件,遮光部件露出薄膜晶体管的输出端子的第一端部的第一区域,并具有包围周边的输出端子遮光部分 所述第一区域和设置在所述遮光构件和所述滤色器上的像素电极,所述像素电极与所述第一区域接触 终端终端
    • 8. 发明申请
    • THIN FILM TRANSISTOR ARRAY PANEL FOR A DISPLAY
    • 薄膜晶体管阵列显示器
    • US20080252828A1
    • 2008-10-16
    • US11930653
    • 2007-10-31
    • Kyoung-Ju ShinHye-Young RyuJang-Soo KimChong-Chul ChalJae-Hyoung YounYoung-Wook Lee
    • Kyoung-Ju ShinHye-Young RyuJang-Soo KimChong-Chul ChalJae-Hyoung YounYoung-Wook Lee
    • G02F1/1335G02F1/1343
    • G02F1/133514G02F1/134309G02F2001/134345G02F2001/136222
    • A thin film transistor array panel includes a substrate, a first gate line and a second gate line formed on the substrate, a storage electrode line between the first gate line and the second gate line, a data line intersecting the first gate line and the second gate line, a first thin film transistor connected to the first gate line and the data line, at least one color filter formed on the first thin film transistor, wherein the color filter comprises a first portion adjacent the first gate line with respect to the storage electrode line, a second portion adjacent the second gate line with respect to the storage electrode line, and a first connection connecting the first portion and the second portion and having a narrower width than that of the first and second portions, a first sub-pixel electrode formed on the color filter and connected to the first thin film transistor, and a second sub-pixel electrode facing the first sub-pixel electrode with respect to a gap, wherein at least one of an edge of the first sub-pixel electrode and an edge of the second sub-pixel electrode crosses over the first connection of the color filter, the edge of the first sub-pixel electrode, and the edge of the second sub-pixel electrode defining the gap between the first sub-pixel electrode and the second sub-pixel electrode.
    • 薄膜晶体管阵列面板包括基板,形成在基板上的第一栅极线和第二栅极线,在第一栅极线和第二栅极线之间的存储电极线,与第一栅极线和第二栅极线相交的数据线 栅极线,连接到第一栅极线和数据线的第一薄膜晶体管,形成在第一薄膜晶体管上的至少一个滤色器,其中滤色器包括相对于存储器的第一栅极线的第一部分 电极线,相对于存储电极线相邻于第二栅极线的第二部分,以及连接第一部分和第二部分并且具有比第一和第二部分窄的宽度的第一连接,第一子像素 电极,形成在滤色器上并连接到第一薄膜晶体管,第二子像素电极相对于间隙面对第一子像素电极,其中至少在 第一子像素电极的边缘和第二子像素电极的边缘的第二子像素电极的边缘与滤色器的第一连接,第一子像素电极的边缘和第二子像素电极的边缘交叉 限定第一子像素电极和第二子像素电极之间的间隙的电极。