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    • 2. 发明授权
    • Water stopping structure and water stopping method
    • 止水结构和止水法
    • US07952020B2
    • 2011-05-31
    • US11753109
    • 2007-05-24
    • Kouichi YamamotoHidehiro IchikawaShigemi Hashizawa
    • Kouichi YamamotoHidehiro IchikawaShigemi Hashizawa
    • H01B7/288
    • H01R13/5208Y02A30/14
    • A water stopping structure includes a water stopping member that has an outer peripheral face which is inclined with respect to an axis direction of a shielded wire, and that is adapted to contract a diameter thereof and attached on an outer face of the shielded wire in a state that the outer peripheral face of the water stopping member is positioned to an end portion of the sheath which is adjacent to an exposed portion of the outer sheath, and a fastening ring that has an inner peripheral face which is corresponded to the outer peripheral face of the water stopping member in inclination. The fastening ring is slid in the axis direction of the shielded wire so as to press the end portion of the sheath of the shielded wire for contracting the diameter of the water stopping member in a state that the inner peripheral face of the fastening ring is arranged on the outer peripheral face of the water stopping member.
    • 防水结构包括防水构件,该防水构件具有相对于屏蔽线的轴线方向倾斜的外周面,并且其适于将其直径收缩并附着在屏蔽线的外表面上 其特征在于,所述止水部件的外周面位于与所述外护套的露出部相邻的所述护套的端部,所述紧固环具有与所述外周面对应的内周面 的止水件倾斜。 紧固环沿屏蔽线的轴线方向滑动,以便在紧固环的内周面布置的状态下按压屏蔽线的护套的端部,以使止水件的直径收缩 在止水部件的外周面上。
    • 5. 发明申请
    • METHOD FOR MANUFACTURING METALLIZED CERAMIC SUBSTRATE CHIP
    • 用于制造金属化陶瓷衬底芯片的方法
    • US20100065310A1
    • 2010-03-18
    • US12516394
    • 2007-11-29
    • Yasuyuki YamamotoKouichi YamamotoMasakatsu Maeda
    • Yasuyuki YamamotoKouichi YamamotoMasakatsu Maeda
    • H05K1/03H01R43/00
    • H05K3/0052H01L23/13H01L2924/0002H05K1/0306H05K2201/09036H05K2201/0909H05K2203/0228Y10T29/49117Y10T29/49124H01L2924/00
    • A method for manufacturing a substrate chip including the steps of: setting the thickness of at least a part of a metal wiring pattern unit provided on the raw substrate to be 0.1 μm to 5 μm; forming a groove for creating at least a crack in the surface of the ceramic substrate along a planned cutting line which passes through the part of the metal wiring pattern unit by using a cutting wheel having a cutter blade being formed into substantially V shape in cross section along the circumferential portion of the disk rotating wheel; and cutting the raw substrate by giving load from just behind of the groove. When manufacturing metallized ceramic substrate chips by cutting (dividing) the ceramic substrate on the surface of which wiring patterns made of a metal film is formed, the method is capable of effectively using the base material, inhibiting defects in the metallized portion, and efficiently manufacturing the substrate chips in high yield.
    • 一种用于制造衬底芯片的方法,包括以下步骤:将设置在原始衬底上的金属布线图案单元的至少一部分的厚度设定为0.1μm至5μm; 形成用于沿着规划的切割线在陶瓷基板的表面中至少形成裂纹的槽,该切割线穿过金属布线图案单元的一部分,通过使用具有切割刀的切割轮,该切割轮具有大致V形截面 沿着盘旋转轮的圆周部分; 并通过从凹槽的后面施加载荷来切割原始基底。 当通过在形成由金属膜制成的布线图案的表面上切割(分割)陶瓷基板来制造金属化陶瓷基板芯片时,该方法能够有效地使用基材,抑制金属化部分中的缺陷并有效地制造 基片芯片产量高。
    • 7. 发明授权
    • Switching circuit and individual voltmeter apparatus
    • 开关电路和个别电压表装置
    • US07194362B2
    • 2007-03-20
    • US11085196
    • 2005-03-22
    • Satoshi IshikawaKouichi Yamamoto
    • Satoshi IshikawaKouichi Yamamoto
    • G01R15/00G01R19/00G05F1/00
    • G01R19/2503G01R31/3658
    • It is an object to provide an individual voltmeter apparatus utilizing a switching circuit which suppresses the variation of the consumption power of the unit cell of a set of batteries. The power supply of a first current path 2m1 and a second current path 2m2 of a level shift circuit 2m is between the unit cell Vm+1 and V1, and between the unit cell Vm+1 and one lower rank cell Vm, respectively. The same current, which responds to all semiconductor switches, flows in the first current path 2m1. In the second current path 2m2, a larger current is provided to the second current path in which the semiconductor switch is connected to the higher rank unit cell.
    • 本发明的目的是提供一种利用开关电路的单独的电压表装置,其抑制一组电池的单电池的消耗功率的变化。 电平移位电路2 m的第一电流通路2 m 1和第二电流通路2 m 2的电源位于单元电池Vm + 1和V 1之间,单元电池Vm + 1和下一级之间 细胞Vm。 响应于所有半导体开关的相同电流在第一电流通路2 m 1中流动。 在第二电流通路2m 2中,向半导体开关连接到较高级单元的第二电流通路提供较大的电流。