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    • 1. 发明授权
    • Pattern measuring method and electron microscope
    • 图案测量方法和电子显微镜
    • US07795581B2
    • 2010-09-14
    • US12038116
    • 2008-02-27
    • Shuichi NakagawaSho Takami
    • Shuichi NakagawaSho Takami
    • G01N21/00G01N23/00G21K7/00
    • H01J37/28H01J37/1472H01J37/265H01J37/3045H01J2237/22H01J2237/2816H01J2237/2817
    • An object of the present invention is to provide a pattern measuring method and an electron microscope that achieve truly high measurement throughput by achieving both precise location of a measurement target position and high-speed movement of the scanning position of an electron beam to the measurement target position. In order to attain the object described above, according to an aspect of the present invention, there is provided a pattern measuring method and an apparatus that move the scanning position of an electron beam based on coordinate information about a first pattern, which is a target to be measured with the electron beam, move the scanning position of the electron beam to a region comprising a second pattern, the relative distance of which from the first pattern is previously registered, in a case where detection of the first pattern at the point of arrival fails, and move the scanning position of the electron beam based on detection of the second pattern and information about the relative distance.
    • 本发明的目的是提供一种图形测量方法和电子显微镜,其通过实现测量目标位置的精确定位和电子束的扫描位置的高速移动到测量目标而实现真正高的测量吞吐量 位置。 为了实现上述目的,根据本发明的一个方面,提供了一种图案测量方法和装置,其基于关于作为目标的第一图案的坐标信息来移动电子束的扫描位置 要用电子束测量,将电子束的扫描位置移动到包括第一图案的第一图案在第一图案的检测的情况下包括第二图案的区域,该第二图案的距离与第一图案的相对距离被预先登记 到达失败,并且基于第二图案的检测和关于相对距离的信息移动电子束的扫描位置。
    • 7. 发明申请
    • Pattern Measuring Method and Electron Microscope
    • 图案测量方法和电子显微镜
    • US20080210865A1
    • 2008-09-04
    • US12038116
    • 2008-02-27
    • Shuichi NAKAGAWASho Takami
    • Shuichi NAKAGAWASho Takami
    • G01N23/00
    • H01J37/28H01J37/1472H01J37/265H01J37/3045H01J2237/22H01J2237/2816H01J2237/2817
    • An object of the present invention is to provide a pattern measuring method and an electron microscope that achieve truly high measurement throughput by achieving both precise location of a measurement target position and high-speed movement of the scanning position of an electron beam to the measurement target position. In order to attain the object described above, according to an aspect of the present invention, there is provided a pattern measuring method and an apparatus that move the scanning position of an electron beam based on coordinate information about a first pattern, which is a target to be measured with the electron beam, move the scanning position of the electron beam to a region comprising a second pattern, the relative distance of which from the first pattern is previously registered, in a case where detection of the first pattern at the point of arrival fails, and move the scanning position of the electron beam based on detection of the second pattern and information about the relative distance.
    • 本发明的目的是提供一种图形测量方法和电子显微镜,其通过实现测量目标位置的精确定位和电子束的扫描位置的高速移动到测量目标而实现真正高的测量吞吐量 位置。 为了实现上述目的,根据本发明的一个方面,提供了一种图案测量方法和装置,其基于关于作为目标的第一图案的坐标信息来移动电子束的扫描位置 要用电子束测量,将电子束的扫描位置移动到包括第一图案的第一图案在第一图案的检测的情况下包括第二图案的区域,该第二图案的距离与第一图案的相对距离被预先登记 到达失败,并且基于第二图案的检测和关于相对距离的信息移动电子束的扫描位置。
    • 10. 发明申请
    • Charged particle beam apparatus
    • 带电粒子束装置
    • US20090294697A1
    • 2009-12-03
    • US12453986
    • 2009-05-28
    • Souichi KatagiriTakashi OhshimaSho TakamiMakoto EzumiTakashi DoiYuji Kasai
    • Souichi KatagiriTakashi OhshimaSho TakamiMakoto EzumiTakashi DoiYuji Kasai
    • A61N5/00G21F5/02
    • H01J37/18H01J2237/06341H01J2237/182H01J2237/188
    • The present invention provides a charged particle beam apparatus that keeps the degree of vacuum in the vicinity of the electron source to ultra-high vacuum such as 10−8 to 10−9 Pa even in the state where electron beams are emitted using a non-evaporable getter pump and is not affected by dropout foreign particles.The present invention includes a vacuum vessel in which a charged particle source (electron source, ion source, etc.) is disposed and a non-evaporable getter pump disposed at a position that does not directly face electron beams and includes a structure that makes the non-evaporable getter pump upward with respect to a horizontal direction to drop out foreign particles into a bottom in a groove, so that the foreign particles dropped out from the non-evaporable getter pump do not face an electron optical system. Or, the present invention includes a structure that is covered by a shield means, or a means that is disposed immediately on a surface of the non-evaporable getter pump but at a position where the electron beams are not seen and has a concave structure capable of trapping the dropout foreign particles on a lower portion of the non-evaporable getter pump.
    • 本发明提供了一种带电粒子束装置,其将电子源附近的真空度保持为10-8至10-9Pa的超高真空度,即使在使用非电子束发射电子束的状态下, 可蒸发吸气泵,不受脱落异物的影响。 本发明包括设置有带电粒子源(电子源,离子源等)的真空容器和设置在不直接面向电子束的位置的非蒸发性吸气泵,并且包括使 不可蒸发的吸气剂相对于水平方向向上泵送以将异物排出到槽中的底部,使得从非蒸发性吸气泵排出的异物不面向电子光学系统。 或者,本发明包括被屏蔽装置覆盖的结构,或者立即设置在不可蒸发的吸气泵的表面上,但是在不能看到电子束的位置处并具有凹形结构的装置 在非蒸发性吸气泵的下部捕获脱落的异物。