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1. 发明申请

US20130058540A1 METHOD FOR MEASURING AND CONTROLLING DISTANCE BETWEEN LOWER END SURFACE OF HEAT SHIELDING MEMBER AND SURFACE OF RAW MATERIAL MELT AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL 有权
标题翻译：用于测量和控制热屏蔽构件的下表面和原料熔体表面之间的距离的方法和用于制造硅单晶的方法
公开(公告)号：US20130058540A1
公开(公告)日：2013-03-07
申请号：US13696772
申请日：2011-04-28
申请人： Kosei Sugawara , Masahiko Urano , Ryoji Hoshi
发明人： Kosei Sugawara , Masahiko Urano , Ryoji Hoshi
IPC分类号： G06K9/62 , C30B15/14
CPC分类号： C03B29/06 , C30B15/26 , C30B29/06
摘要： A method for measuring a distance between a lower end surface of a heat shielding member including a criterion reflector inside a concavity on the lower end surface and a surface of a raw material melt includes: a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the raw material melt in a crucible, measuring the distance between the lower end surface of the heat shielding member and the surface of the raw material melt and observing a position of a mirror image of the criterion reflector with a fixed point observation apparatus; and measuring a movement distance of the mirror image with the apparatus and calculating the distance between the lower end surface of the heat shielding member and the surface of the raw material melt from the movement distance of the image and the measured distance.
摘要翻译：一种用于测量在下端表面的凹部内的标准反射器和原料熔融物的表面之间的包含标准反射镜的下端面之间的距离的方法包括：通过切克劳斯基法以硅单晶拉伸，将磁场施加到坩埚中的原料熔体，测量隔热构件的下端面与原料熔融物的表面之间的距离，并用固定点观察标准反射体的镜像位置观察装置; 并测量该镜像与该设备的运动距离，并根据该图像的移动距离和测量距离计算该热屏蔽构件的下端表面与该原料熔体的表面之间的距离。

2. 发明授权

US08885915B2 Method for measuring and controlling distance between lower end surface of heat shielding member and surface of raw material melt and method for manufacturing silicon single crystal 有权
标题翻译：用于测量和控制隔热构件的下端面与原料熔体表面之间的距离的方法以及制造单晶硅的方法
公开(公告)号：US08885915B2
公开(公告)日：2014-11-11
申请号：US13696772
申请日：2011-04-28
申请人： Kosei Sugawara , Masahiko Urano , Ryoji Hoshi
发明人： Kosei Sugawara , Masahiko Urano , Ryoji Hoshi
IPC分类号： G06K9/00 , C03B29/06 , C30B15/26
CPC分类号： C03B29/06 , C30B15/26 , C30B29/06
摘要： A method for measuring a distance between a lower end surface of a heat shielding member including a criterion reflector inside a concavity on the lower end surface and a surface of a raw material melt includes: a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the raw material melt in a crucible, measuring the distance between the lower end surface of the heat shielding member and the surface of the raw material melt and observing a position of a mirror image of the criterion reflector with a fixed point observation apparatus; and measuring a movement distance of the mirror image with the apparatus and calculating the distance between the lower end surface of the heat shielding member and the surface of the raw material melt from the movement distance of the image and the measured distance.
摘要翻译：一种用于测量在下端表面的凹部内的标准反射器和原料熔融物的表面之间的包含标准反射镜的下端面之间的距离的方法包括：通过切克劳斯基法以硅单晶拉伸，将磁场施加到坩埚中的原料熔体，测量隔热构件的下端面与原料熔融物的表面之间的距离，并用固定点观察标准反射体的镜像位置观察装置; 并测量该镜像与该设备的运动距离，并根据该图像的移动距离和测量距离计算该热屏蔽构件的下端表面与该原料熔体的表面之间的距离。

3. 发明授权

US08083852B2 Single crystal growth method and single crystal pulling apparatus 有权
标题翻译：单晶生长法和单晶拉制装置
公开(公告)号：US08083852B2
公开(公告)日：2011-12-27
申请号：US12922917
申请日：2009-03-24
申请人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
发明人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
IPC分类号： C30B15/06
CPC分类号： C30B15/20 , C30B15/10 , C30B29/06 , Y10T117/1068 , Y10T117/1072
摘要： A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.
摘要翻译：一种从基于Czochralski方法在石英坩埚中熔化的硅原料的熔体中提取和生长单晶的硅单晶生长方法，该方法包括以下步骤：施加直流电压，使得石英坩埚的外壁作为正极，并且浸入硅原料的熔体中的电极用作负极，浸没电极与用于拉出单晶的拉拔构件分开放置; 以及在使电流通过电极的同时用牵引构件生长单晶及其牵引装置。

4. 发明申请

US20130323153A1 SILICON SINGLE CRYSTAL WAFER 审中-公开
标题翻译：硅单晶水晶
公开(公告)号：US20130323153A1
公开(公告)日：2013-12-05
申请号：US13985756
申请日：2012-02-15
申请人： Ryoji Hoshi , Suguru Matsumoto , Hiroyuki Kamada , Kosei Sugawara
发明人： Ryoji Hoshi , Suguru Matsumoto , Hiroyuki Kamada , Kosei Sugawara
IPC分类号： C01B33/02
CPC分类号： C01B33/02 , C30B15/203 , C30B15/206 , C30B29/06 , G01N21/47 , G01N21/9501 , G01N2021/4735 , H01L21/3225
摘要： The present invention provides a silicon single crystal wafer sliced out from a silicon single crystal ingot grown by a Czochralski method, wherein the silicon single crystal wafer is sliced out from the silicon single crystal ingot having oxygen concentration of 8×1017 atoms/cm3 (ASTM' 79) or less and includes of a defect region where neither FPDs nor LEPs are detected by preferential etching but LSTDs are detected by an infrared scattering method. As a result, the wafer having the low oxygen concentration can be provided at low cost without causing a breakdown voltage failure or a leak failure at the time of fabricating a device.
摘要翻译：本发明提供从通过切克劳斯基法生长的硅单晶锭切片的硅单晶晶片，其中将硅单晶晶片从具有8×1017原子/ cm3的氧浓度的硅单晶锭中切出（ASTM '79）以下，并且包括通过优先蚀刻而不检测到FPD或LEP的缺陷区域，而通过红外散射法检测LSTD。结果，可以以低成本提供具有低氧浓度的晶片，而不会在制造器件时引起击穿电压故障或泄漏故障。

5. 发明申请

US20130247815A1 SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD FOR PRODUCING SINGLE CRYSTAL 审中-公开
标题翻译：单晶生产装置和单晶生产方法
公开(公告)号：US20130247815A1
公开(公告)日：2013-09-26
申请号：US13990266
申请日：2012-01-06
申请人： Kosei Sugawara , Suguru Matsumoto , Toshiro Shimada , Ryoji Hoshi
发明人： Kosei Sugawara , Suguru Matsumoto , Toshiro Shimada , Ryoji Hoshi
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , C30B29/06 , Y10T117/1068
摘要： A single crystal production apparatus including: a crucible containing raw material melt; a heater heating the raw material melt; a cooling cylinder that is cooled forcedly by a cooling medium; and a cooling chamber that houses the crucible, the heater, and the cooling cylinder, wherein a heat-shielding member having a heat insulating material is disposed, near an interface between the raw material melt and a single crystal being pulled, in such a way as to surround the single crystal being pulled, the cooling cylinder is disposed above the heat-shielding member in such a way as to surround the single crystal being pulled, and a cooling-cylinder-peripheral heat insulator is disposed with a gap provided between the cooling-cylinder-peripheral heat insulator and a periphery of the cooling cylinder in such a way as to surround the cooling cylinder.
摘要翻译：一种单晶生产设备，包括：含有原料熔体的坩埚; 加热器加热原料熔体; 被冷却介质强制冷却的冷却缸; 以及容纳坩埚，加热器和冷却筒的冷却室，其中具有绝热材料的隔热构件设置在原料熔体和被拉出的单晶之间的界面附近，以这种方式为了围绕被拉动的单晶，冷却筒以围绕被拉动的单晶的方式设置在隔热构件的上方，并且设置有冷却缸外周绝热体，间隙设置在冷却缸外周绝热体和冷却筒的周围，以包围冷却筒。

6. 发明申请

US20110017125A1 SINGLE CRYSTAL GROWTH METHOD AND SINGLE CRYSTAL PULLING APPARATUS 有权
标题翻译：单晶生长方法和单晶拉伸装置
公开(公告)号：US20110017125A1
公开(公告)日：2011-01-27
申请号：US12922917
申请日：2009-03-24
申请人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
发明人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
IPC分类号： C30B15/14 , C30B15/10
CPC分类号： C30B15/20 , C30B15/10 , C30B29/06 , Y10T117/1068 , Y10T117/1072
摘要： A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.
摘要翻译：一种从基于Czochralski方法在石英坩埚中熔化的硅原料的熔体中提取和生长单晶的硅单晶生长方法，该方法包括以下步骤：施加直流电压，使得石英坩埚的外壁作为正极，并且浸入硅原料的熔体中的电极用作负极，浸没电极与用于拉出单晶的拉拔构件分开放置; 以及在使电流通过电极的同时用牵引构件生长单晶及其牵引装置。

7. 发明申请

US20100064964A1 METHOD FOR MEASURING DISTANCE BETWEEN LOWER END SURFACE OF HEAT INSULATING MEMBER AND SURFACE OF RAW MATERIAL MELT AND METHOD FOR CONTROLLING THEREOF 有权
标题翻译：用于测量绝热构件的下端表面和原料熔体表面之间的距离的方法及其控制方法
公开(公告)号：US20100064964A1
公开(公告)日：2010-03-18
申请号：US12448845
申请日：2008-01-10
申请人： Ryoji Hoshi , Masahiko Urano , Susumu Sonokawa
发明人： Ryoji Hoshi , Masahiko Urano , Susumu Sonokawa
IPC分类号： C30B15/00 , G06K9/00
CPC分类号： C30B15/26 , C30B15/14 , C30B15/20 , C30B29/06
摘要： There is provided in the present invention a method for measuring a distance between a lower end surface of a heat insulating member 14 and a surface of a raw material melt 4 when a silicon single crystal is pulled by a Czochralski method while a magnetic field is applied to a raw material melt 4 in a crucible, a reference reflector 18 being located at the lower end of the heat insulating member 14 which is located above the surface of the raw material melt 4, characterized in that the method includes steps of: actually measuring a distance A between the lower end surface of the heat insulating member and the surface of the raw material melt; observing a location R1 of a mirror image of the reference reflector 18 reflected on the surface of the raw material melt by a fixed-point observing apparatus 19; subsequently measuring a travel distance B of the mirror image by the fixed-point observing apparatus 19 while pulling the silicon single crystal; and calculating the distance between the lower end surface of the heat insulating member and the surface of the raw material melt, from an actually measured value A and the travel distance B of the mirror image. Thereby a method for measuring a distance between a lower end surface of a heat insulating member and a surface of a raw material melt which can stably and more accurately measure the distance between the lower end surface of the heat insulating member and the surface of the raw material melt can be provided.
摘要翻译：本发明提供了一种在施加磁场时，通过切克劳斯基法（Czochralski）拉动硅单晶时，测量绝热构件14的下端表面与原料熔融物4的表面之间的距离的方法在坩埚中的原料熔融物4上，参考反射体18位于绝热构件14的位于原料熔融体4的表面上方的下端，其特征在于，该方法包括以下步骤：实际测量隔热构件的下端面与原料熔融体的表面之间的距离A; 通过定点观察装置19观察在原料熔融物表面上反射的参考反射体18的镜面的位置R1; 随后通过定点观测装置19测量镜像的行进距离B，同时拉动硅单晶; 以及根据实际测量值A和镜像的行进距离B计算隔热构件的下端表面与原料熔体的表面之间的距离。因此，可以测定绝热部件的下端面与原料熔融体的表面之间的距离的方法，该方法能够稳定且更准确地测定隔热部件的下端面与原料的表面之间的距离可以提供材料熔体。

8. 发明授权

US08764900B2 Apparatus and method for producing single crystals 有权
标题翻译：单晶制造装置及方法
公开(公告)号：US08764900B2
公开(公告)日：2014-07-01
申请号：US12310776
申请日：2007-08-20
申请人： Kiyotaka Takano , Masahiko Urano , Ryoji Hoshi
发明人： Kiyotaka Takano , Masahiko Urano , Ryoji Hoshi
IPC分类号： C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/203 , C30B15/14 , C30B29/06
摘要： The present invention provides an apparatus for producing single crystals according to the Czochralski method, the apparatus including a chamber that can be divided into a plurality of chambers; at least one of the plurality of divided chambers having a circulating coolant passage in which a circulating coolant for cooling the chamber circulates; and measuring means that respectively measure an inlet temperature, an outlet temperature, and a circulating coolant flow rate of the circulating coolant in the circulating coolant passage; the apparatus further including a calculating means that calculates a quantity of heat removed from the chamber and/or a proportion of the quantity of removed heat, from the measured values of the inlet temperature, outlet temperature, and circulating coolant flow rate; and a pulling rate control means that controls a pulling rate of the single crystal based on the resulting quantity of removed heat and/or the resulting proportion of the quantity of removed heat. The invention also provides a method for producing single crystals using the apparatus. Thus, an apparatus and a method for producing single crystals are provided for producing single crystals while easily stabilizing the crystal quality.
摘要翻译：本发明提供了一种根据切克劳斯基法生产单晶的装置，该装置包括可分为多个室的腔室; 所述多个分隔室中的至少一个具有循环冷却剂通道，其中用于冷却所述室的循环冷却剂循环; 以及测量装置，分别测量循环冷却剂通道中循环冷却剂的入口温度，出口温度和循环冷却剂流量; 该装置还包括从入口温度，出口温度和循环冷却剂流量的测量值计算从室除去的热量和/或去除热量的一部分的计算装置; 以及牵引速度控制装置，其基于所得到的去除热量和/或所得到的除热量的比例来控制单晶的拉伸速率。本发明还提供使用该装置制备单晶的方法。因此，提供用于制造单晶的装置和方法，以便容易地稳定晶体质量。

9. 发明申请

US20090249995A1 Apparatus and method for producing single crystals 有权
标题翻译：单晶制造装置及方法
公开(公告)号：US20090249995A1
公开(公告)日：2009-10-08
申请号：US12310776
申请日：2007-08-20
申请人： Kiyotaka Takano , Masahiko Urano , Ryoji Hoshi
发明人： Kiyotaka Takano , Masahiko Urano , Ryoji Hoshi
IPC分类号： C30B15/20 , C30B15/12
CPC分类号： C30B15/203 , C30B15/14 , C30B29/06
摘要： The present invention provides an apparatus for producing single crystals according to the Czochralski method, the apparatus including a chamber that can be divided into a plurality of chambers; at least one of the plurality of divided chambers having a circulating coolant passage in which a circulating coolant for cooling the chamber circulates; and measuring means that respectively measure an inlet temperature, an outlet temperature, and a circulating coolant flow rate of the circulating coolant in the circulating coolant passage; the apparatus further including a calculating means that calculates a quantity of heat removed from the chamber and/or a proportion of the quantity of removed heat, from the measured values of the inlet temperature, outlet temperature, and circulating coolant flow rate; and a pulling rate control means that controls a pulling rate of the single crystal based on the resulting quantity of removed heat and/or the resulting proportion of the quantity of removed heat. The invention also provides a method for producing single crystals using the apparatus. Thus, an apparatus and a method for producing single crystals are provided for producing single crystals while easily stabilizing the crystal quality.
摘要翻译：本发明提供了一种根据切克劳斯基法生产单晶的装置，该装置包括可分为多个室的腔室; 所述多个分隔室中的至少一个具有循环冷却剂通道，其中用于冷却所述室的循环冷却剂循环; 以及测量装置，分别测量循环冷却剂通道中循环冷却剂的入口温度，出口温度和循环冷却剂流量; 该装置还包括从入口温度，出口温度和循环冷却剂流量的测量值计算从室除去的热量和/或去除热量的一部分的计算装置; 以及牵引速度控制装置，其基于所得到的去除热量和/或所得到的除热量的比例来控制单晶的拉伸速率。本发明还提供使用该装置制备单晶的方法。因此，提供用于制造单晶的装置和方法，以便容易地稳定晶体质量。

10. 发明授权

US09260796B2 Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereof 有权
标题翻译：隔热构件的下端面与原料熔体的表面之间的距离测定方法及其控制方法
公开(公告)号：US09260796B2
公开(公告)日：2016-02-16
申请号：US12448845
申请日：2008-01-10
申请人： Ryoji Hoshi , Masahiko Urano , Susumu Sonokawa
发明人： Ryoji Hoshi , Masahiko Urano , Susumu Sonokawa
IPC分类号： C30B15/00 , C30B15/26 , C30B15/14 , C30B15/20 , C30B29/06
CPC分类号： C30B15/26 , C30B15/14 , C30B15/20 , C30B29/06
摘要： A method for measuring a distance between a lower end surface of a heat insulating member and a surface of a raw material melt with a reference reflector provided at a lower end of the heat insulating member which is located above the surface of the raw material melt when a silicon single crystal is pulled up by a Czochralski method while a magnetic field is applied to the raw material melt in a crucible is disclosed. The method comprises the steps of contacting a projection made of quartz, silicon or carbon with the surface of the raw material melt, the projection being longer that the reference reflector and having a length corresponding to an initial distance; electrically detecting the contact between the projection and the melt surface, and observing an initial location of a mirror image of the reference reflector by a camera when the distance between the lower end surface of the heat insulating member and the surface of the raw material melt has been adjusted so as to be the initial distance, the mirror image being reflected on the surface of the raw material melt; and while pulling the silicon single crystal, measuring a travel distance of the mirror image from the initial location by the camera and calculating the distance between the lower end surface of the heat insulating member and the surface of the raw material melt from the initial travel distance of the mirror image.
摘要翻译：一种用于测量绝热构件的下端表面与原料熔体表面之间的距离的方法，所述参考反射器设置在位于原料熔体表面上方的绝热构件的下端，公开了在坩埚中对原料熔体施加磁场的情况下，利用切克劳斯基法（Czochralski method）将硅单晶拉伸。该方法包括以下步骤：将由石英，硅或碳制成的突起与原料熔体的表面接触，突起比参考反射体更长，并具有与初始距离相对应的长度; 电检测突起和熔体表面之间的接触，并且当绝热构件的下端表面与原料熔体表面之间的距离具有相机时，通过相机观察参考反射体的镜像的初始位置被调整为初始距离，镜像在原料熔体的表面上反射; 并且在拉动硅单晶的同时，通过照相机测量镜像与初始位置的移动距离，并从初始行进距离计算绝热构件的下端表面与原料熔体的表面之间的距离的镜像。

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