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1. 发明申请

US20220064815A1 APPARATUS AND METHOD FOR CONTINUOUS CRYSTAL PULLING 有权
公开(公告)号：US20220064815A1
公开(公告)日：2022-03-03
申请号：US17038591
申请日：2020-09-30
申请人： Jinko Green Energy (Shanghai) Management Co., LTD , JINKO SOLAR CO., LTD.
发明人： Jun Yang , Weize Shang , Xiaolong Bai
IPC分类号： C30B15/00 , C30B15/12 , C30B15/02 , C30B15/22 , C30B29/06
摘要： Provided is an apparatus and a method for continuous crystal pulling. The apparatus includes: a crucible including a first sub-crucible and a second sub-crucible located at inner side of the first sub-crucible; a draft tube located above the crucible; and a delivery duct supplying materials to the crucible. A ratio of inner diameter of the second sub-crucible to outer diameter of the draft tube is ≥1.05. In a first state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a first distance, in a second state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a second distance. The first distance is greater than the second distance. In the first and second states, a distance between a crystal-liquid interface in the crucible and the bottom surface of the draft tube remains substantially unchanged.

2. 发明申请

US20200255971A1 METHODS FOR RECYCLING MONOCRYSTALLINE SEGMENTS CUT FROM A MONOCRYSTALLINE INGOT 审中-公开
公开(公告)号：US20200255971A1
公开(公告)日：2020-08-13
申请号：US15776357
申请日：2016-11-18
申请人： Corner Star Limited
发明人： Steven Lawrence Kimbel
IPC分类号： C30B15/02 , C30B15/12 , C30B15/20 , C30B29/06
摘要： A method of recycling monocrystalline segments cut from a monocrystalline ingot of semiconductor or solar grade material is provided. The method includes removing a first monocrystalline segment from the monocrystalline ingot, connecting the first monocrystalline segment to a second monocrystalline segment to form a chain of monocrystalline segments, and introducing the chain of monocrystalline segments into a melt of semiconductor or solar grade material.

3. 发明授权

US10557213B2 Crystal growing systems and methods including a transparent crucible 有权
公开(公告)号：US10557213B2
公开(公告)日：2020-02-11
申请号：US15920796
申请日：2018-03-14
申请人： GlobalWafers Co., Ltd.
发明人： Richard J. Phillips , Soubir Basak , Gaurab Samanta
IPC分类号： C30B15/14 , C30B15/12 , C30B29/06
摘要： A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly. The crucible assembly includes a substantially transparent crucible. The system further includes a heating system for generating thermal energy and disposed to supply thermal energy to the susceptor via thermal radiation. The susceptor enables transfer of thermal energy to the melt via radiation through the transparent crucible.

4. 发明授权

US10358740B2 Crystal growing systems and methods including a passive heater 有权
公开(公告)号：US10358740B2
公开(公告)日：2019-07-23
申请号：US14341580
申请日：2014-07-25
申请人： SunEdison, Inc.
发明人： Tirumani Swaminathan
IPC分类号： C30B15/12 , C30B15/14 , C30B15/20 , C30B29/06 , C30B15/00
摘要： A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.

5. 发明授权

US10202705B2 Silicon ingot having uniform multiple dopants and method and apparatus for producing same 有权
公开(公告)号：US10202705B2
公开(公告)日：2019-02-12
申请号：US13446353
申请日：2012-04-13
申请人： Bayard K. Johnson , John P. Deluca , William L. Luter
发明人： Bayard K. Johnson , John P. Deluca , William L. Luter
IPC分类号： C30B15/04 , C30B29/06 , C30B15/12 , H01L31/18 , C30B15/00
摘要： A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.

6. 发明申请

US20180187329A1 CRYSTAL PULLING SYSTEM AND METHOD INCLUDING CRUCIBLE AND CONDITIONING MEMBERS 审中-公开
公开(公告)号：US20180187329A1
公开(公告)日：2018-07-05
申请号：US15398407
申请日：2017-01-04
申请人： SunEdison, Inc.
发明人： Salvador Zepeda , Richard J. Phillips , Christopher Vaughn Luers , Steven Lawrence Kimbel , Harold W. Korb , John D. Holder , Carissima Marie Hudson , Hariprasad Sreedharamurthy , Stephan Haringer , Marco Zardoni
IPC分类号： C30B15/20 , C30B15/00 , C30B15/02 , C30B15/12 , C30B29/06
CPC分类号： C30B15/20 , C30B15/002 , C30B15/02 , C30B15/12 , C30B29/06
摘要： Systems and methods for forming an ingot from a melt are disclosed. A system includes a crucible defining a cavity for receiving the melt, and a first and second barrier to inhibit movement of the melt. A first passageway and a second passageway are arranged to allow the melt located within an outer zone to move into and through a transition zone and into an inner zone. Conditioning members are placed in at least one of the zones and arranged to contact the melt to reduce the number of micro-voids in the melt.

7. 发明授权

US09863063B2 Weir for inhibiting melt flow in a crucible 有权
公开(公告)号：US09863063B2
公开(公告)日：2018-01-09
申请号：US14107743
申请日：2013-12-16
申请人： SunEdison, Inc.
发明人： Tirumani N. Swaminathan
IPC分类号： C30B15/12 , C30B15/00 , C30B11/00
CPC分类号： C30B15/12 , C30B11/002 , C30B15/002 , Y10T117/1052
摘要： A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.

8. 发明授权

US09376762B2 Weir for improved crystal growth in a continuous Czochralski process 有权
标题翻译：用于在连续的切克劳斯基（Czochralski）工艺中改善晶体生长的堰
公开(公告)号：US09376762B2
公开(公告)日：2016-06-28
申请号：US13689189
申请日：2012-11-29
申请人： Solaicx, Inc.
发明人： Tirumani N. Swaminathan
IPC分类号： C30B15/12 , C30B15/00 , C30B29/06
CPC分类号： C30B15/12 , C30B15/002 , C30B29/06 , Y10T117/1052
摘要： An apparatus for growing ingots by the Czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the growth chamber configured to hold the molten silicon. A weir is supported in the crucible and is configured to separate the molten silicon into an inner growth region surrounding the melt/crystal interface from an outer region configured to receive the crystalline feedstock. The weir comprises at least one sidewall extending vertically and a cap extending substantially perpendicularly to the sidewall.
摘要翻译：用于通过切克劳斯基法（Czochralski）方法生长铸锭的装置包括：生长室，其限定被配置成围绕生长锭循环净化气体的壳体;以及设置在生长室中的坩埚，其配置成保持熔融硅。堰被支撑在坩埚中，并且被构造成将熔融硅分离成熔融/晶体界面周围的内部生长区域与构造成接收结晶原料的外部区域分离。堰包括至少一个垂直延伸的侧壁和大致垂直于侧壁延伸的盖。

9. 发明申请

US20160024684A1 WEIR FOR INHIBITING MELT CONTAMINATION 有权
标题翻译：抑制熔体污染
公开(公告)号：US20160024684A1
公开(公告)日：2016-01-28
申请号：US14341584
申请日：2014-07-25
申请人： SunEdison, Inc.
发明人： Tirumani Swaminathan
IPC分类号： C30B15/12
CPC分类号： C30B15/12 , C30B15/02 , C30B29/06 , Y10T117/1052 , Y10T117/1064
摘要： A system for growing a crystal ingot from a melt is provided. The system includes a first crucible, a barrier, and a shield. The first crucible has a first base and a first sidewall forming a first cavity for containing the melt. The barrier is disposed within the first cavity of the first crucible to inhibit movement of the melt from outward of the barrier to inward of the barrier. The barrier extends from the first base to above the melt. The barrier has an inner arm and an outer arm extending upward to form a channel therebetween. The shield extends downward between the inner arm and the outer arm to inhibit passage of contaminants.
摘要翻译：提供了用于从熔体生长晶锭的系统。该系统包括第一坩埚，屏障和屏蔽。第一坩埚具有形成用于容纳熔体的第一腔的第一基底和第一侧壁。屏障设置在第一坩埚的第一腔内，以阻止熔体从屏障的外部移动到屏障的内侧。阻挡层从第一基底延伸到熔体之上。屏障具有向上延伸的内臂和外臂，以在它们之间形成通道。护罩在内臂和外臂之间向下延伸以阻止污染物通过。

10. 发明申请

US20150259823A1 Apparatus for manufacturing ingot 有权
标题翻译：用于制造锭的装置
公开(公告)号：US20150259823A1
公开(公告)日：2015-09-17
申请号：US14257202
申请日：2014-04-21
申请人： Hyun Goo Kwon , Yeo Kyun Yoon , Min Soo Son
发明人： Hyun Goo Kwon , Yeo Kyun Yoon , Min Soo Son
IPC分类号： C30B15/00 , C30B15/10 , C30B15/14 , C30B15/12
CPC分类号： C30B15/002 , C30B15/12 , C30B15/14 , C30B29/06 , Y10T117/1052
摘要： Disclosed is an ingot manufacturing apparatus that includes: an inner wall which has a growth zone where an ingot IG grows from molten silicon; a crucible which surrounds the inner wall; and a heat reflector which is formed convexly toward an interface between a surface of the molten silicon of the growth zone and the inner wall.
摘要翻译：公开了一种锭制造装置，其包括：内壁，其具有铸锭IG从熔融硅生长的生长区; 围绕内壁的坩埚; 以及朝向生长区的熔融硅的表面与内壁之间的界面凸形形成的热反射体。

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