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1. 发明授权

US08083852B2 Single crystal growth method and single crystal pulling apparatus 有权
标题翻译：单晶生长法和单晶拉制装置
公开(公告)号：US08083852B2
公开(公告)日：2011-12-27
申请号：US12922917
申请日：2009-03-24
申请人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
发明人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
IPC分类号： C30B15/06
CPC分类号： C30B15/20 , C30B15/10 , C30B29/06 , Y10T117/1068 , Y10T117/1072
摘要： A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.
摘要翻译：一种从基于Czochralski方法在石英坩埚中熔化的硅原料的熔体中提取和生长单晶的硅单晶生长方法，该方法包括以下步骤：施加直流电压，使得石英坩埚的外壁作为正极，并且浸入硅原料的熔体中的电极用作负极，浸没电极与用于拉出单晶的拉拔构件分开放置; 以及在使电流通过电极的同时用牵引构件生长单晶及其牵引装置。

2. 发明申请

US20110017125A1 SINGLE CRYSTAL GROWTH METHOD AND SINGLE CRYSTAL PULLING APPARATUS 有权
标题翻译：单晶生长方法和单晶拉伸装置
公开(公告)号：US20110017125A1
公开(公告)日：2011-01-27
申请号：US12922917
申请日：2009-03-24
申请人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
发明人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
IPC分类号： C30B15/14 , C30B15/10
CPC分类号： C30B15/20 , C30B15/10 , C30B29/06 , Y10T117/1068 , Y10T117/1072
摘要： A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.
摘要翻译：一种从基于Czochralski方法在石英坩埚中熔化的硅原料的熔体中提取和生长单晶的硅单晶生长方法，该方法包括以下步骤：施加直流电压，使得石英坩埚的外壁作为正极，并且浸入硅原料的熔体中的电极用作负极，浸没电极与用于拉出单晶的拉拔构件分开放置; 以及在使电流通过电极的同时用牵引构件生长单晶及其牵引装置。

3. 发明申请

US20130058540A1 METHOD FOR MEASURING AND CONTROLLING DISTANCE BETWEEN LOWER END SURFACE OF HEAT SHIELDING MEMBER AND SURFACE OF RAW MATERIAL MELT AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL 有权
标题翻译：用于测量和控制热屏蔽构件的下表面和原料熔体表面之间的距离的方法和用于制造硅单晶的方法
公开(公告)号：US20130058540A1
公开(公告)日：2013-03-07
申请号：US13696772
申请日：2011-04-28
申请人： Kosei Sugawara , Masahiko Urano , Ryoji Hoshi
发明人： Kosei Sugawara , Masahiko Urano , Ryoji Hoshi
IPC分类号： G06K9/62 , C30B15/14
CPC分类号： C03B29/06 , C30B15/26 , C30B29/06
摘要： A method for measuring a distance between a lower end surface of a heat shielding member including a criterion reflector inside a concavity on the lower end surface and a surface of a raw material melt includes: a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the raw material melt in a crucible, measuring the distance between the lower end surface of the heat shielding member and the surface of the raw material melt and observing a position of a mirror image of the criterion reflector with a fixed point observation apparatus; and measuring a movement distance of the mirror image with the apparatus and calculating the distance between the lower end surface of the heat shielding member and the surface of the raw material melt from the movement distance of the image and the measured distance.
摘要翻译：一种用于测量在下端表面的凹部内的标准反射器和原料熔融物的表面之间的包含标准反射镜的下端面之间的距离的方法包括：通过切克劳斯基法以硅单晶拉伸，将磁场施加到坩埚中的原料熔体，测量隔热构件的下端面与原料熔融物的表面之间的距离，并用固定点观察标准反射体的镜像位置观察装置; 并测量该镜像与该设备的运动距离，并根据该图像的移动距离和测量距离计算该热屏蔽构件的下端表面与该原料熔体的表面之间的距离。

4. 发明申请

US20130323153A1 SILICON SINGLE CRYSTAL WAFER 审中-公开
标题翻译：硅单晶水晶
公开(公告)号：US20130323153A1
公开(公告)日：2013-12-05
申请号：US13985756
申请日：2012-02-15
申请人： Ryoji Hoshi , Suguru Matsumoto , Hiroyuki Kamada , Kosei Sugawara
发明人： Ryoji Hoshi , Suguru Matsumoto , Hiroyuki Kamada , Kosei Sugawara
IPC分类号： C01B33/02
CPC分类号： C01B33/02 , C30B15/203 , C30B15/206 , C30B29/06 , G01N21/47 , G01N21/9501 , G01N2021/4735 , H01L21/3225
摘要： The present invention provides a silicon single crystal wafer sliced out from a silicon single crystal ingot grown by a Czochralski method, wherein the silicon single crystal wafer is sliced out from the silicon single crystal ingot having oxygen concentration of 8×1017 atoms/cm3 (ASTM' 79) or less and includes of a defect region where neither FPDs nor LEPs are detected by preferential etching but LSTDs are detected by an infrared scattering method. As a result, the wafer having the low oxygen concentration can be provided at low cost without causing a breakdown voltage failure or a leak failure at the time of fabricating a device.
摘要翻译：本发明提供从通过切克劳斯基法生长的硅单晶锭切片的硅单晶晶片，其中将硅单晶晶片从具有8×1017原子/ cm3的氧浓度的硅单晶锭中切出（ASTM '79）以下，并且包括通过优先蚀刻而不检测到FPD或LEP的缺陷区域，而通过红外散射法检测LSTD。结果，可以以低成本提供具有低氧浓度的晶片，而不会在制造器件时引起击穿电压故障或泄漏故障。

5. 发明授权

US06764548B2 Apparatus and method for producing silicon semiconductor single crystal 有权
标题翻译：硅半导体单晶的制造方法及其制造方法
公开(公告)号：US06764548B2
公开(公告)日：2004-07-20
申请号：US10204278
申请日：2002-08-20
申请人： Ryoji Hoshi , Takahiro Yanagimachi , Izumi Fusegawa , Tomohiko Ohta , Yuuichi Miyahara , Tetsuya Igarashi
发明人： Ryoji Hoshi , Takahiro Yanagimachi , Izumi Fusegawa , Tomohiko Ohta , Yuuichi Miyahara , Tetsuya Igarashi
IPC分类号： C30B3500
CPC分类号： C30B15/14 , C30B15/206 , C30B29/06 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： The present invention provides an apparatus and a method for producing a silicon semiconductor single crystal which can stabilize and homogenize an amount of precipitated oxygen in the direction of the crystal growth axis when growing a silicon semiconductor single crystal. The apparatus for producing a silicon semiconductor single crystal by the Czochralski method comprises a main growth furnace having a crucible retaining silicon melt disposed therein for growing a silicon semiconductor single crystal, and an upper growth furnace for housing therein and cooling the silicon semiconductor single crystal pulled from the silicon melt, wherein the upper growth furnace communicated to a ceiling section of the main growth furnace is provided with an upper insulating member for surrounding a pulled silicon semiconductor single crystal.
摘要翻译：本发明提供了一种用于制造硅半导体单晶的装置和方法，当生长硅半导体单晶时，可以使晶体生长轴方向上的沉淀氧量稳定和均化。通过切克劳斯基法生产硅半导体单晶的装置包括：主生长炉，其具有保存硅熔体的坩埚，用于生长硅半导体单晶;以及上部生长炉，用于容纳在其中并冷却硅半导体单晶拉伸与硅熔体相连，其中与主生长炉的顶部连通的上部生长炉设置有用于围绕拉制硅半导体单晶的上部绝缘构件。

6. 发明授权

US08885915B2 Method for measuring and controlling distance between lower end surface of heat shielding member and surface of raw material melt and method for manufacturing silicon single crystal 有权
标题翻译：用于测量和控制隔热构件的下端面与原料熔体表面之间的距离的方法以及制造单晶硅的方法
公开(公告)号：US08885915B2
公开(公告)日：2014-11-11
申请号：US13696772
申请日：2011-04-28
申请人： Kosei Sugawara , Masahiko Urano , Ryoji Hoshi
发明人： Kosei Sugawara , Masahiko Urano , Ryoji Hoshi
IPC分类号： G06K9/00 , C03B29/06 , C30B15/26
CPC分类号： C03B29/06 , C30B15/26 , C30B29/06
摘要： A method for measuring a distance between a lower end surface of a heat shielding member including a criterion reflector inside a concavity on the lower end surface and a surface of a raw material melt includes: a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the raw material melt in a crucible, measuring the distance between the lower end surface of the heat shielding member and the surface of the raw material melt and observing a position of a mirror image of the criterion reflector with a fixed point observation apparatus; and measuring a movement distance of the mirror image with the apparatus and calculating the distance between the lower end surface of the heat shielding member and the surface of the raw material melt from the movement distance of the image and the measured distance.
摘要翻译：一种用于测量在下端表面的凹部内的标准反射器和原料熔融物的表面之间的包含标准反射镜的下端面之间的距离的方法包括：通过切克劳斯基法以硅单晶拉伸，将磁场施加到坩埚中的原料熔体，测量隔热构件的下端面与原料熔融物的表面之间的距离，并用固定点观察标准反射体的镜像位置观察装置; 并测量该镜像与该设备的运动距离，并根据该图像的移动距离和测量距离计算该热屏蔽构件的下端表面与该原料熔体的表面之间的距离。

7. 发明申请

US20130247815A1 SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD FOR PRODUCING SINGLE CRYSTAL 审中-公开
标题翻译：单晶生产装置和单晶生产方法
公开(公告)号：US20130247815A1
公开(公告)日：2013-09-26
申请号：US13990266
申请日：2012-01-06
申请人： Kosei Sugawara , Suguru Matsumoto , Toshiro Shimada , Ryoji Hoshi
发明人： Kosei Sugawara , Suguru Matsumoto , Toshiro Shimada , Ryoji Hoshi
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , C30B29/06 , Y10T117/1068
摘要： A single crystal production apparatus including: a crucible containing raw material melt; a heater heating the raw material melt; a cooling cylinder that is cooled forcedly by a cooling medium; and a cooling chamber that houses the crucible, the heater, and the cooling cylinder, wherein a heat-shielding member having a heat insulating material is disposed, near an interface between the raw material melt and a single crystal being pulled, in such a way as to surround the single crystal being pulled, the cooling cylinder is disposed above the heat-shielding member in such a way as to surround the single crystal being pulled, and a cooling-cylinder-peripheral heat insulator is disposed with a gap provided between the cooling-cylinder-peripheral heat insulator and a periphery of the cooling cylinder in such a way as to surround the cooling cylinder.
摘要翻译：一种单晶生产设备，包括：含有原料熔体的坩埚; 加热器加热原料熔体; 被冷却介质强制冷却的冷却缸; 以及容纳坩埚，加热器和冷却筒的冷却室，其中具有绝热材料的隔热构件设置在原料熔体和被拉出的单晶之间的界面附近，以这种方式为了围绕被拉动的单晶，冷却筒以围绕被拉动的单晶的方式设置在隔热构件的上方，并且设置有冷却缸外周绝热体，间隙设置在冷却缸外周绝热体和冷却筒的周围，以包围冷却筒。

8. 发明申请

US20100258050A1 APPARATUS FOR PRODUCING SINGLE CRYSTAL 有权
标题翻译：用于生产单晶的装置
公开(公告)号：US20100258050A1
公开(公告)日：2010-10-14
申请号：US12744606
申请日：2008-12-18
申请人： Ryoji Hoshi , Kiyotaka Takano
发明人： Ryoji Hoshi , Kiyotaka Takano
IPC分类号： C30B15/10
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , C30B35/00 , Y10T117/1068
摘要： The present invention is an apparatus for producing a single crystal, growing the single crystal by the Czochralski method and comprising at least: a main chamber in which a crucible for accommodating a raw material melt and a heater for heating the raw material melt are arranged; a pulling chamber into which the grown single crystal is pulled and accommodated, the pulling chamber being continuously provided above the main chamber; and a cooling cylinder extending at least from a ceiling of the main chamber toward a surface of the raw material melt so as to surround the single crystal during pulling, the cooling cylinder being forcibly cooled with a cooling medium. As a result, there is provided an apparatus for producing a single crystal that can increase the growth rate of the single crystal by efficiently cooling the single crystal during the growth.
摘要翻译：本发明是一种用于制造单晶的装置，其通过切克劳斯基法（Czochralski method）生长单晶，并且至少包括：主室，其中容纳原料熔体的坩埚和用于加热原料熔体的加热器; 其中拉出和容纳生长的单晶的拉动室，拉动室连续地设置在主室上方; 以及至少从主室的天花板朝向原料熔融物的表面延伸以在拉伸期间包围单晶的冷却缸，冷却缸被冷却介质强制冷却。结果，提供了一种用于生产单晶的装置，其可以通过在生长期间有效地冷却单晶来增加单晶的生长速率。

9. 发明申请

US20100064964A1 METHOD FOR MEASURING DISTANCE BETWEEN LOWER END SURFACE OF HEAT INSULATING MEMBER AND SURFACE OF RAW MATERIAL MELT AND METHOD FOR CONTROLLING THEREOF 有权
标题翻译：用于测量绝热构件的下端表面和原料熔体表面之间的距离的方法及其控制方法
公开(公告)号：US20100064964A1
公开(公告)日：2010-03-18
申请号：US12448845
申请日：2008-01-10
申请人： Ryoji Hoshi , Masahiko Urano , Susumu Sonokawa
发明人： Ryoji Hoshi , Masahiko Urano , Susumu Sonokawa
IPC分类号： C30B15/00 , G06K9/00
CPC分类号： C30B15/26 , C30B15/14 , C30B15/20 , C30B29/06
摘要： There is provided in the present invention a method for measuring a distance between a lower end surface of a heat insulating member 14 and a surface of a raw material melt 4 when a silicon single crystal is pulled by a Czochralski method while a magnetic field is applied to a raw material melt 4 in a crucible, a reference reflector 18 being located at the lower end of the heat insulating member 14 which is located above the surface of the raw material melt 4, characterized in that the method includes steps of: actually measuring a distance A between the lower end surface of the heat insulating member and the surface of the raw material melt; observing a location R1 of a mirror image of the reference reflector 18 reflected on the surface of the raw material melt by a fixed-point observing apparatus 19; subsequently measuring a travel distance B of the mirror image by the fixed-point observing apparatus 19 while pulling the silicon single crystal; and calculating the distance between the lower end surface of the heat insulating member and the surface of the raw material melt, from an actually measured value A and the travel distance B of the mirror image. Thereby a method for measuring a distance between a lower end surface of a heat insulating member and a surface of a raw material melt which can stably and more accurately measure the distance between the lower end surface of the heat insulating member and the surface of the raw material melt can be provided.
摘要翻译：本发明提供了一种在施加磁场时，通过切克劳斯基法（Czochralski）拉动硅单晶时，测量绝热构件14的下端表面与原料熔融物4的表面之间的距离的方法在坩埚中的原料熔融物4上，参考反射体18位于绝热构件14的位于原料熔融体4的表面上方的下端，其特征在于，该方法包括以下步骤：实际测量隔热构件的下端面与原料熔融体的表面之间的距离A; 通过定点观察装置19观察在原料熔融物表面上反射的参考反射体18的镜面的位置R1; 随后通过定点观测装置19测量镜像的行进距离B，同时拉动硅单晶; 以及根据实际测量值A和镜像的行进距离B计算隔热构件的下端表面与原料熔体的表面之间的距离。因此，可以测定绝热部件的下端面与原料熔融体的表面之间的距离的方法，该方法能够稳定且更准确地测定隔热部件的下端面与原料的表面之间的距离可以提供材料熔体。

10. 发明申请

US20080184928A1 Method for Producing Single Crystal and a Method for Producing Annealed Wafer 有权
标题翻译：生产单晶的方法和生产退火晶片的方法
公开(公告)号：US20080184928A1
公开(公告)日：2008-08-07
申请号：US11792693
申请日：2005-10-21
申请人： Ryoji Hoshi , Takahiro Yanagimachi
发明人： Ryoji Hoshi , Takahiro Yanagimachi
IPC分类号： C30B15/00
CPC分类号： C30B15/203 , C30B15/14 , C30B29/06
摘要： The present invention is a method for producing a single crystal that is a multi-pulling method for pulling a plurality of single crystals 3 from a raw material melt 4 in a same crucible in a chamber by a Czochralski method, comprising steps of: pulling a single crystal 3 from a raw material melt 4; then additionally charging polycrystalline raw material in a residual raw material melt 4 without turning off power of a heater 7, and melting the polycrystalline raw material; then pulling a next single crystal 3; and repeating the steps and thereby pulling the plurality of single crystals 3; wherein in a case of setting a ratio of a pulling rate V and crystal temperature gradient G near a solid-liquid interface along a pulling axis direction when a straight body of the single crystal 3 is grown to be V/G, in order to control the V/G of each of the single crystals 3 to be pulled to a predetermined value, a pulling condition such as the pulling rate V is preliminarily modified according to an elapsed time from beginning of operation, before pulling the single crystal; and thereby the single crystal 3 having a desired defect region is grown. Thereby, a method for producing a single crystal by which wafer products of desired quality are produced in large quantity and stably is provided.
摘要翻译：本发明是一种制造单晶的方法，该单晶是通过切克劳斯（Czochralski）法在室内的同一坩埚中从原料熔融物4拉出多个单晶3的多牵引方法，包括以下步骤：单晶3从原料熔体4; 然后在残留的原料熔体4中另外加入多晶原料而不关闭加热器7的电源，并熔化多晶原料; 然后拉下一个单晶3; 并重复上述步骤，从而拉动多个单晶3; 在将单晶3的直体生长为V / G的情况下，在将固体 - 液体界面附近的拉伸速度V和晶体温度梯度G的比率设定为V / G的情况下，为了控制要拉出单个晶体3的V / G到预定值，在拉动单晶之前，根据从操作开始的经过时间，预先修改诸如拉拔速度V的拉动条件; 从而生长具有所需缺陷区域的单晶3。由此，提供了以大量稳定地制造具有期望质量的晶片产品的单晶的制造方法。

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