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    • 1. 发明申请
    • Micromechanical capacitive acceleration sensor
    • 微机电容加速度传感器
    • US20060156818A1
    • 2006-07-20
    • US10471296
    • 2002-03-07
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfried Weinacht
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfried Weinacht
    • G01P15/125
    • F16N11/08G01P15/125G01P15/18G01P2015/0831G01P2015/0834G01P2015/0845G01P2015/0857G01P2015/086
    • A micromechanical capacitive acceleration sensor is described for picking up the acceleration of an object in at least one direction. The sensor includes a frame structure (110), a sensor inertia mass (101) made of a wafer and movably mounted relative to the frame structure (110) about a rotation axis, and a capacitive pick-up unit (120) for producing at least one capacitive output signal representing the position of the sensor mass (101) relative to the frame structure (110). The sensor inertia mass (101) has a center of gravity which offset relative to the rotation axis in a direction perpendicularly to a wafer plane for measuring accelerations laterally to the wafer plane. The sensor mass (101) and the frame structure (110) are made monolithically of one single crystal silicon wafer. A cover section (112) forms a common connector plane (150) for the connection of capacitor electrodes (125,126). Torqueable elements (105) form an electrically conducting bearing device for the sensor mass (101).
    • 描述了一种微机电容加速度传感器,用于拾取至少一个方向的物体的加速度。 该传感器包括框架结构(110),由晶片制成的传感器惯性质量块(101),并围绕旋转轴线相对于框架结构(110)可移动地安装;以及电容式拾取单元(120) 表示传感器质量块(101)相对于框架结构(110)的位置的至少一个电容式输出信号。 传感器惯性质量(101)具有垂直于晶片平面的方向相对于旋转轴偏移的重心,用于测量横向于晶片平面的加速度。 传感器质量(101)和框架结构(110)由一个单晶硅晶片制成一体。 盖部分(112)形成用于连接电容器电极(125,126)的公共连接器平面(150)。 扭矩元件(105)形成用于传感器质量块(101)的导电轴承装置。
    • 2. 发明授权
    • Micromechanical capacitive acceleration sensor
    • 微机电容加速度传感器
    • US07343801B2
    • 2008-03-18
    • US10471296
    • 2002-03-07
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfred Weinacht
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfred Weinacht
    • G01P15/125
    • F16N11/08G01P15/125G01P15/18G01P2015/0831G01P2015/0834G01P2015/0845G01P2015/0857G01P2015/086
    • A micromechanical capacitive acceleration sensor is described for picking up the acceleration of an object in at least one direction. The sensor includes a frame structure (110), a sensor inertia mass (101) made of a wafer and movably mounted relative to the frame structure (110) about a rotation axis, and a capacitive pick-up unit (120) for producing at least one capacitive output signal representing the position of the sensor mass (101) relative to the frame structure (110). The sensor inertia mass (101) has a center of gravity which offset relative to the rotation axis in a direction perpendicularly to a wafer plane for measuring accelerations laterally to the wafer plane. The sensor mass (101) and the frame structure (110) are made monolithically of one single crystal silicon wafer. A cover section (112) forms a common connector plane (150) for the connection of capacitor electrodes (125,126). Torqueable elements (105) form an electrically conducting bearing device for the sensor mass (101).
    • 描述了一种微机电容加速度传感器,用于拾取至少一个方向的物体的加速度。 该传感器包括框架结构(110),由晶片制成的传感器惯性质量块(101),并围绕旋转轴线相对于框架结构(110)可移动地安装;以及电容式拾取单元(120) 表示传感器质量块(101)相对于框架结构(110)的位置的至少一个电容式输出信号。 传感器惯性质量(101)具有垂直于晶片平面的方向相对于旋转轴偏移的重心,用于测量横向于晶片平面的加速度。 传感器质量(101)和框架结构(110)由一个单晶硅晶片制成一体。 盖部分(112)形成用于连接电容器电极(125,126)的公共连接器平面(150)。 扭矩元件(105)形成用于传感器质量块(101)的导电轴承装置。
    • 4. 发明授权
    • Microsensor with a resonator structure
    • 具有谐振器结构的微传感器
    • US06389898B1
    • 2002-05-21
    • US09424542
    • 2000-02-22
    • Helmut SeidelMatthias AikeleUlrich PrechtelOliver NaglerKarl Kühl
    • Helmut SeidelMatthias AikeleUlrich PrechtelOliver NaglerKarl Kühl
    • G01P1510
    • G01P15/097G01C19/5621G01P2015/0817
    • A microsensor with a resonator structure, which is excited by first electrical signals to oscillate and emits second electrical signals in dependence on the measuring variable, wherein a heating element, supplied with at least one of the first electrical signals, is arranged on the resonator structure for the thermal excitations of oscillations. For the thermal excitation of lateral oscillations in a microsensor with a resonator structure, the microsensor is provided at one oscillating part of the resonator structure with at least two regions that are thermally separated by a zone with reduced heat conductance, and the heating element is arranged on one of the regions. This type of arrangements permits the excitation of the resonator structure to lateral oscillations if the heating element is supplied with corresponding current pulses. It is advantageous if a receiving element is arranged on at least one of the other regions to detect the oscillation amplitude.
    • 一种具有谐振器结构的微传感器,其由第一电信号激发,以根据测量变量振荡并发出第二电信号,其中提供有至少一个第一电信号的加热元件布置在谐振器结构 用于振荡的热激发。 对于具有谐振器结构的微传感器中的横向振荡的热激发,微传感器被提供在谐振器结构的一个振荡部分处,具有至少两个区域,该区域被热导率降低的区域热隔离,并且加热元件布置 在其中一个地区。 如果加热元件被提供相应的电流脉冲,这种类型的布置允许谐振器结构的激励到横向振荡。 接收元件布置在至少一个其它区域上以检测振荡幅度是有利的。
    • 9. 发明申请
    • Method for producing insulation structures
    • 绝缘结构的制造方法
    • US20060121735A1
    • 2006-06-08
    • US10527789
    • 2003-09-12
    • Matthias AikeleAlbert EngelhardtMarcus FreyBernhard HartmannHelmut Seidel
    • Matthias AikeleAlbert EngelhardtMarcus FreyBernhard HartmannHelmut Seidel
    • H01L21/302H01L21/461
    • B81C1/00698B81B2201/0235B81B2203/033B81C2201/0178
    • The invention relates to processes for the formation of isolation structures for micro-machined sensors in single-crystal surface technology. In known processes, silicon structures defined by deep trenches are etched and uncovered by a “release etch” step also at their bottom surface towards the substrate. The subsequent lining of these trenches with a non-conducting insulating material, such as silicon dioxide leads to a firm anchoring by means of a surrounding of the silicon structure with the lined trenches on three sides, leaving one side uncovered. It is the main idea of the invention—instead of lining the trenches—to convert thin-walled silicon into an electrically non-conducting material. This can, for instance, be accomplished by means of a thermal oxidation of narrow silicon ribs released prior thereto by trenches. In the minimal configuration, two trenches (holes) per rib with the required structure depth must be etched for this purpose. The silicon rib between them must be narrow enough to permit its complete thermal through oxidation.
    • 本发明涉及用于在单晶表面技术中形成用于微加工传感器的隔离结构的方法。 在已知的工艺中,由深沟槽限定的硅结构通过在其底表面朝向衬底的“释放蚀刻”步骤被蚀刻和未覆盖。 这些具有非导电绝缘材料(例如二氧化硅)的这些沟槽的后续衬里导致通过硅结构的周围与三面沟槽在三面上的牢固锚定,留下一侧未覆盖。 本发明的主要思想是将薄壁硅转化为非导电材料,而不是将沟槽衬里。 这可以例如通过在其之前通过沟槽释放的窄硅肋的热氧化来实现。 在最小的构造中,为了这个目的,必须蚀刻每个具有所需结构深度的肋的两个沟槽(孔)。 它们之间的硅筋必须足够窄以使其完全通过热氧化。