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    • 4. 发明授权
    • Micromechanical capacitive acceleration sensor
    • 微机电容加速度传感器
    • US07343801B2
    • 2008-03-18
    • US10471296
    • 2002-03-07
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfred Weinacht
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfred Weinacht
    • G01P15/125
    • F16N11/08G01P15/125G01P15/18G01P2015/0831G01P2015/0834G01P2015/0845G01P2015/0857G01P2015/086
    • A micromechanical capacitive acceleration sensor is described for picking up the acceleration of an object in at least one direction. The sensor includes a frame structure (110), a sensor inertia mass (101) made of a wafer and movably mounted relative to the frame structure (110) about a rotation axis, and a capacitive pick-up unit (120) for producing at least one capacitive output signal representing the position of the sensor mass (101) relative to the frame structure (110). The sensor inertia mass (101) has a center of gravity which offset relative to the rotation axis in a direction perpendicularly to a wafer plane for measuring accelerations laterally to the wafer plane. The sensor mass (101) and the frame structure (110) are made monolithically of one single crystal silicon wafer. A cover section (112) forms a common connector plane (150) for the connection of capacitor electrodes (125,126). Torqueable elements (105) form an electrically conducting bearing device for the sensor mass (101).
    • 描述了一种微机电容加速度传感器,用于拾取至少一个方向的物体的加速度。 该传感器包括框架结构(110),由晶片制成的传感器惯性质量块(101),并围绕旋转轴线相对于框架结构(110)可移动地安装;以及电容式拾取单元(120) 表示传感器质量块(101)相对于框架结构(110)的位置的至少一个电容式输出信号。 传感器惯性质量(101)具有垂直于晶片平面的方向相对于旋转轴偏移的重心,用于测量横向于晶片平面的加速度。 传感器质量(101)和框架结构(110)由一个单晶硅晶片制成一体。 盖部分(112)形成用于连接电容器电极(125,126)的公共连接器平面(150)。 扭矩元件(105)形成用于传感器质量块(101)的导电轴承装置。
    • 5. 发明申请
    • Micromechanical capacitive acceleration sensor
    • 微机电容加速度传感器
    • US20060156818A1
    • 2006-07-20
    • US10471296
    • 2002-03-07
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfried Weinacht
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfried Weinacht
    • G01P15/125
    • F16N11/08G01P15/125G01P15/18G01P2015/0831G01P2015/0834G01P2015/0845G01P2015/0857G01P2015/086
    • A micromechanical capacitive acceleration sensor is described for picking up the acceleration of an object in at least one direction. The sensor includes a frame structure (110), a sensor inertia mass (101) made of a wafer and movably mounted relative to the frame structure (110) about a rotation axis, and a capacitive pick-up unit (120) for producing at least one capacitive output signal representing the position of the sensor mass (101) relative to the frame structure (110). The sensor inertia mass (101) has a center of gravity which offset relative to the rotation axis in a direction perpendicularly to a wafer plane for measuring accelerations laterally to the wafer plane. The sensor mass (101) and the frame structure (110) are made monolithically of one single crystal silicon wafer. A cover section (112) forms a common connector plane (150) for the connection of capacitor electrodes (125,126). Torqueable elements (105) form an electrically conducting bearing device for the sensor mass (101).
    • 描述了一种微机电容加速度传感器,用于拾取至少一个方向的物体的加速度。 该传感器包括框架结构(110),由晶片制成的传感器惯性质量块(101),并围绕旋转轴线相对于框架结构(110)可移动地安装;以及电容式拾取单元(120) 表示传感器质量块(101)相对于框架结构(110)的位置的至少一个电容式输出信号。 传感器惯性质量(101)具有垂直于晶片平面的方向相对于旋转轴偏移的重心,用于测量横向于晶片平面的加速度。 传感器质量(101)和框架结构(110)由一个单晶硅晶片制成一体。 盖部分(112)形成用于连接电容器电极(125,126)的公共连接器平面(150)。 扭矩元件(105)形成用于传感器质量块(101)的导电轴承装置。
    • 6. 发明授权
    • Microsensor with a resonator structure
    • 具有谐振器结构的微传感器
    • US06389898B1
    • 2002-05-21
    • US09424542
    • 2000-02-22
    • Helmut SeidelMatthias AikeleUlrich PrechtelOliver NaglerKarl Kühl
    • Helmut SeidelMatthias AikeleUlrich PrechtelOliver NaglerKarl Kühl
    • G01P1510
    • G01P15/097G01C19/5621G01P2015/0817
    • A microsensor with a resonator structure, which is excited by first electrical signals to oscillate and emits second electrical signals in dependence on the measuring variable, wherein a heating element, supplied with at least one of the first electrical signals, is arranged on the resonator structure for the thermal excitations of oscillations. For the thermal excitation of lateral oscillations in a microsensor with a resonator structure, the microsensor is provided at one oscillating part of the resonator structure with at least two regions that are thermally separated by a zone with reduced heat conductance, and the heating element is arranged on one of the regions. This type of arrangements permits the excitation of the resonator structure to lateral oscillations if the heating element is supplied with corresponding current pulses. It is advantageous if a receiving element is arranged on at least one of the other regions to detect the oscillation amplitude.
    • 一种具有谐振器结构的微传感器,其由第一电信号激发,以根据测量变量振荡并发出第二电信号,其中提供有至少一个第一电信号的加热元件布置在谐振器结构 用于振荡的热激发。 对于具有谐振器结构的微传感器中的横向振荡的热激发,微传感器被提供在谐振器结构的一个振荡部分处,具有至少两个区域,该区域被热导率降低的区域热隔离,并且加热元件布置 在其中一个地区。 如果加热元件被提供相应的电流脉冲,这种类型的布置允许谐振器结构的激励到横向振荡。 接收元件布置在至少一个其它区域上以检测振荡幅度是有利的。
    • 10. 发明申请
    • High Frequency Mems Switch Having a Bent Switching Element and Method for its Production
    • 具有弯曲开关元件的高频存储器开关及其生产方法
    • US20070215446A1
    • 2007-09-20
    • US10590699
    • 2005-02-25
    • Ulrich PrechtelVolker Ziegler
    • Ulrich PrechtelVolker Ziegler
    • H01H59/00H01H65/00
    • H01H59/0009H01H2059/0081Y10T29/49105
    • A high-frequency MEMS switch comprises a signal conductor which is arranged on a substrate and an oblong switching element which has a bent elastic bending area and is fastened on the substrate in a cantilevered manner. An electrode arrangement generates an electrostatic force which bends the switching element toward the signal conductor. The switching element is arranged longitudinally parallel to the signal conductor, and has a contact area which extends transversely to the switch element over the signal conductor. Under the effect of the electrostatic force, the elastic bending area of the switching element progressively approaches the electrode arrangement in a direction parallel to the signal line. The switching element has, for example, two mutually parallel extending switching arms, which are mutually connected by a bridge as the contact area and are arranged on both sides of the signal line and parallel thereto.
    • 高频MEMS开关包括布置在基板上的信号导体和具有弯曲弹性弯曲区域并以悬臂方式紧固在基板上的长方形开关元件。 电极布置产生使开关元件朝向信号导体弯曲的静电力。 开关元件纵向平行于信号导体布置,并且具有在信号导体上横向于开关元件延伸的接触区域。 在静电力的作用下,开关元件的弹性弯曲区域沿平行于信号线的方向逐渐接近电极布置。 开关元件具有例如两个相互平行的延伸的开关臂,它们通过作为接触区域的桥相互连接并且布置在信号线的两侧并与之平行。