会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Polishing method
    • 抛光方法
    • US06239032B1
    • 2001-05-29
    • US09207629
    • 1998-12-09
    • Kenro NakamuraHiroyuki Yano
    • Kenro NakamuraHiroyuki Yano
    • B44C122
    • C09G1/02C09K3/1463H01L21/31053
    • A silicon nitride film is formed on a base layer having a silicon oxide film and a trench, in such a manner that the trench of the base layer is filled with the silicon nitride film. Subsequently, the silicon nitride film is selectively polished with reference to the silicon oxide film, with the silicon oxide film used as a stopper. The silicon nitride film is polished in a chemical mechanical polishing process that uses slurry containing a phosphoric acid and silica whose particle diameter is less than 10 nm, or slurry containing a phosphoric acid derivative and silica whose particle diameter is less than 10 nm. As a result of this selective polishing, the silicon nitride film selectively remains inside the trench.
    • 在具有氧化硅膜和沟槽的基底层上形成氮化硅膜,使得基底层的沟槽填充有氮化硅膜。 随后,相对于氧化硅膜选择性地研磨氮化硅膜,其中氧化硅膜用作塞子。 在使用含有磷酸和粒径小于10nm的二氧化硅的浆料的化学机械抛光工艺或者粒径小于10nm的磷酸衍生物和二氧化硅的浆料中进行氮化硅膜的研磨。 作为这种选择抛光的结果,氮化硅膜选择性地保留在沟槽内。
    • 8. 发明授权
    • Substrate processing apparatus
    • 基板加工装置
    • US07066787B2
    • 2006-06-27
    • US10765147
    • 2004-01-28
    • Masayuki NakanishiYou IshiiKenro Nakamura
    • Masayuki NakanishiYou IshiiKenro Nakamura
    • B24B49/00B24B51/00B24B7/00
    • B24B9/065B24B21/002
    • A substrate processing apparatus is used for removing surface irregularities occurring on a peripheral portion (a bevel portion, an edge portion, and a notch) of a substrate, such as a semiconductor wafer, and films deposited as a contaminant on the peripheral portion of such a substrate. The substrate processing apparatus includes an edge-portion polisher for pressing a polishing tape against an edge portion of a substrate and causing relative movement between the polishing tape and the substrate to polish the edge portion of the substrate, and a bevel-portion polisher for pressing a polishing tape against a bevel portion of the substrate and causing relative movement between this polishing tape and the substrate to polish the bevel portion of the substrate.
    • 基板处理装置用于去除诸如半导体晶片的基板的外围部分(斜面部分,边缘部分和凹口)上出现的表面凹凸,以及作为污染物沉积在其周边部分上的薄膜 底物。 基板处理装置包括:边缘部分抛光机,用于将研磨带压靠在基板的边缘部分上,并引起研磨带与基板之间的相对运动以抛光基板的边缘部分;以及斜面部分抛光机,用于按压 抛光带抵靠基板的斜面部分,并引起该抛光带与基板之间的相对移动以抛光基板的斜面部分。