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1. 发明授权

US07354861B1 Polishing method and polishing liquid 失效
标题翻译：抛光方法和抛光液
公开(公告)号：US07354861B1
公开(公告)日：2008-04-08
申请号：US09453831
申请日：1999-12-02
申请人： Kenro Nakamura , Takeo Kubota , Gaku Minamihaba
发明人： Kenro Nakamura , Takeo Kubota , Gaku Minamihaba
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/00 , C09G1/02
摘要： Disclosed is a method for polishing a surface of a substrate containing Ru or a Ru compound in a surface region, said method comprising a polishing step with a polishing liquid containing tetravalent cerium ions. The polishing liquid is prepared by adding a compound having a tetravalent cerium ion or its solution to a solvent in or immediately before the polishing step of the substrate.
摘要翻译：公开了一种在表面区域中研磨含有Ru或Ru化合物的基板的表面的方法，所述方法包括具有含有四价铈离子的研磨液的研磨工序。抛光液是通过在基板的研磨步骤之前或之前向溶剂中加入具有四价铈离子或其溶液的化合物而制备的。

2. 发明授权

US08778802B2 Polishing method and method for fabricating semiconductor device 有权
标题翻译：抛光方法及制造半导体器件的方法
公开(公告)号：US08778802B2
公开(公告)日：2014-07-15
申请号：US11802532
申请日：2007-05-23
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , B24B37/04 , B24B57/02 , H01L21/02074 , H01L21/31053
摘要： A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.
摘要翻译：抛光方法包括：使设置在转台上的抛光垫与转台一起旋转，并且通过使用旋转的抛光垫来抛光衬底的表面，同时在前侧向抛光垫的表面提供化学流体的相对于抛光垫的表面的倾斜方向。

3. 发明申请

US20130095661A1 CMP METHOD, CMP APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译： CMP方法，CMP装置和制造半导体器件的方法
公开(公告)号：US20130095661A1
公开(公告)日：2013-04-18
申请号：US13428163
申请日：2012-03-23
申请人： Akifumi GAWASE , Yukiteru Matsui , Gaku Minamihaba , Hajime Eda
发明人： Akifumi GAWASE , Yukiteru Matsui , Gaku Minamihaba , Hajime Eda
IPC分类号： H01L21/302 , B24B53/017 , B24B37/015 , B24B37/013 , B24B37/07
CPC分类号： H01L21/76224 , C09G1/02 , H01L21/31053
摘要： According to one embodiment, a CMP method includes starting a polishing of a silicon oxide film by using a slurry including a silicon oxide abrasive and a polishing stopper film including a silicon nitride film, and stopping the polishing when the polishing stopper is exposed. The slurry includes a first water-soluble polymer with a weight-average molecular weight of 50000 or more and 5000000 or less, and a second water-soluble polymer with a weight-average molecular weight of 1000 or more and 10000 or less.
摘要翻译：根据一个实施例，CMP方法包括通过使用包括氧化硅研磨剂的浆料和包括氮化硅膜的抛光阻挡膜来开始研磨氧化硅膜，并且在抛光停止剂暴露时停止抛光。浆料包括重均分子量为50000以上且5000000以下的第一水溶性聚合物和重均分子量为1000以上且10000以下的第二水溶性聚合物。

4. 发明申请

US20130040456A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20130040456A1
公开(公告)日：2013-02-14
申请号：US13427950
申请日：2012-03-23
申请人： Hajime EDA , Yukiteru Matsui , Gaku Minamihaba , Akifumi Gawase
发明人： Hajime EDA , Yukiteru Matsui , Gaku Minamihaba , Akifumi Gawase
IPC分类号： H01L21/768
CPC分类号： H01L21/7684 , H01L21/02074 , H01L21/3212 , H01L21/67219
摘要： According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a groove is formed in a insulating film on a semiconductor substrate. An underlayer film is formed on the insulating film. A metal film is formed on the underlayer film. First polishing, in which the metal film is removed, is performed by supplying a first CMP slurry containing metal ions. The surfaces of the polishing pad and the semiconductor substrate are cleaned by supplying organic acid and pure water. Second polishing, in which the underlayer film is removed from the portion other than the groove, is performed by supplying a second CMP slurry different from the first CMP slurry.
摘要翻译：根据一个实施例，提供一种制造半导体器件的方法。在该方法中，在半导体衬底上的绝缘膜中形成沟槽。在绝缘膜上形成下层膜。在下层膜上形成金属膜。通过提供含有金属离子的第一CMP浆料来进行其中去除金属膜的第一次抛光。通过供给有机酸和纯水来清洗抛光垫和半导体基板的表面。通过供给不同于第一CMP浆料的第二CMP浆料，进行从凹槽以外的部分除去下层膜的第二研磨。

5. 发明申请

US20110192420A1 CLEANING APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：清洁装置和制造半导体器件的方法
公开(公告)号：US20110192420A1
公开(公告)日：2011-08-11
申请号：US13020088
申请日：2011-02-03
申请人： Nobuyuki KURASHIMA , Gaku Minamihaba
发明人： Nobuyuki KURASHIMA , Gaku Minamihaba
IPC分类号： B08B1/00 , B08B3/00
CPC分类号： B08B1/04 , H01L21/67046
摘要： In one embodiment, a cleaning apparatus, including, supporting bodies supporting and rotating a substrate, each of a first and a second cleaning member, having a circular shape and rotating around a rotational symmetry axis, periphery portions of the cleaning members being able to contact to opposed surfaces of the substrate, each of a first brush-cleaning member and a second brush-cleaning member having a groove with a V-shape cross section being widened upwards, a brush with a cleaning function being formed on a slope plane of the groove, the cleaning members being able to shift to contact to the slope planes, respectively, first cleaning solution supply portions supplying a first cleaning solution dispersed resin particles to the surfaces, and second cleaning solution supply portions supplying a second cleaning solution to peripheries of the cleaning members and which are arranged to contact to the slope planes, respectively.
摘要翻译：在一个实施例中，一种清洁装置，包括支撑和旋转基板的支撑体，第一和第二清洁构件中的每一个，具有圆形并围绕旋转对称轴旋转，清洁构件的周边部分能够接触在基板的相对表面上，具有第一刷清洁构件和具有V形横截面的槽的第二刷清洁构件中的每一个向上加宽，具有清洁功能的刷子形成在所述清洁部件分别能够转移到与所述倾斜平面接触的第一清洗溶液供应部分，将第一清洁溶液分散在所述表面上的分散树脂颗粒;以及第二清洁溶液供应部分，清洁构件，并分别与斜面接触。

6. 发明授权

US07951717B2 Post-CMP treating liquid and manufacturing method of semiconductor device using the same 失效
标题翻译：后CMP处理液和使用其的半导体器件的制造方法
公开(公告)号：US07951717B2
公开(公告)日：2011-05-31
申请号：US11967584
申请日：2007-12-31
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/302 , H01L21/461 , C09K3/14 , C09G1/02
CPC分类号： H01L21/02074
摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译：提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，和四甲基氢氧化铵。另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。

7. 发明申请

US20110062374A1 CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于金属膜的CMP浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US20110062374A1
公开(公告)日：2011-03-17
申请号：US12926358
申请日：2010-11-12
申请人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212 , H01L22/26
摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
摘要翻译：提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

8. 发明申请

US20100093585A1 POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：使用其的半导体器件的后CMP处理液体和制造方法
公开(公告)号：US20100093585A1
公开(公告)日：2010-04-15
申请号：US12638607
申请日：2009-12-15
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： C11D1/74
CPC分类号： H01L21/02074 , C11D1/22 , C11D3/30 , C11D3/3765 , C11D11/0047
摘要： A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译：提供后CMP处理液，其包括水，其表面上具有羧基和磺酰基，一次粒径为10至60nm的树脂颗粒，具有羧基的第一表面活性剂，具有磺酰基的第二表面活性剂基团和四甲基氢氧化铵。树脂颗粒以0.01至1重量％的浓度掺入。处理液的pH为4〜9，并且以10nm / min以下的速度显示绝缘膜和导电膜的抛光速度。

9. 发明申请

US20090068841A1 Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device 有权
标题翻译：有机薄膜的化学机械抛光方法及制造半导体器件的方法
公开(公告)号：US20090068841A1
公开(公告)日：2009-03-12
申请号：US12289326
申请日：2008-10-24
申请人： Yukiteru Matsui , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano , Atsushi Shigeta
发明人： Yukiteru Matsui , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano , Atsushi Shigeta
IPC分类号： H01L21/304
CPC分类号： H01L21/76808 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L27/10867
摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.
摘要翻译：公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

10. 发明授权

US07465668B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07465668B2
公开(公告)日：2008-12-16
申请号：US11296483
申请日：2005-12-08
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： B24B37/042 , H01L21/3212 , H01L21/7684
摘要： A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.
摘要翻译：提供了一种制造半导体器件的方法，其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷，从而形成处理膜，同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜，在抛光垫上含有氧化剂的第二化学溶液，所述处理膜在第一次负载下与抛光垫接触，并且在抛光之后，通过继续进行抛光来对处理膜的表面进行化学抛光在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液，处理膜以小于第一载荷的第二载荷与抛光垫接触。

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