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1. 发明申请

US20050250423A1 Method for manufacturing semiconductor device and polishing apparatus 失效
公开(公告)号：US20050250423A1
公开(公告)日：2005-11-10
申请号：US11178318
申请日：2005-07-12
申请人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
发明人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
IPC分类号： B24B9/00 , B24B9/06 , B24B21/00 , B24B21/06 , H01L21/304 , H01L21/321 , B24B1/00
CPC分类号： H01L21/304 , B24B9/065 , B24B21/002 , B24B21/06 , H01L21/321 , Y10S134/902
摘要： In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.

2. 发明授权

US07351131B2 Method for manufacturing semiconductor device and polishing apparatus 失效
标题翻译：半导体器件和抛光装置的制造方法
公开(公告)号：US07351131B2
公开(公告)日：2008-04-01
申请号：US11178318
申请日：2005-07-12
申请人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
发明人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
IPC分类号： B24B1/00
CPC分类号： H01L21/304 , B24B9/065 , B24B21/002 , B24B21/06 , H01L21/321 , Y10S134/902
摘要： In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.
摘要翻译：在半导体器件的制造中，元件的一部分形成在基板的表面上，并且使用在基板周围进行拉伸的研磨部件来研磨基板的至少周边，使得研磨部件的研磨面在周边的抛光对象表面上滑动。

3. 发明授权

US06933234B2 Method for manufacturing semiconductor device and polishing apparatus 失效
标题翻译：半导体器件和抛光装置的制造方法
公开(公告)号：US06933234B2
公开(公告)日：2005-08-23
申请号：US10303001
申请日：2002-11-25
申请人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
发明人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
IPC分类号： B24B9/00 , B24B9/06 , B24B21/00 , B24B21/06 , H01L21/304 , H01L21/321 , B24B1/00 , H01L21/302
CPC分类号： H01L21/304 , B24B9/065 , B24B21/002 , B24B21/06 , H01L21/321 , Y10S134/902
摘要： In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.
摘要翻译：在半导体器件的制造中，元件的一部分形成在基板的表面上，并且使用在基板周围进行拉伸的研磨部件来研磨基板的至少周边，使得研磨部件的研磨面在周边的抛光对象表面上滑动。

4. 发明授权

US5254872A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5254872A
公开(公告)日：1993-10-19
申请号：US673265
申请日：1991-03-21
申请人： Takashi Yoda , Tohru Watanabe , Katsuya Okumura
发明人： Takashi Yoda , Tohru Watanabe , Katsuya Okumura
IPC分类号： H01L23/532 , H01L23/48
CPC分类号： H01L23/53223 , H01L2924/0002
摘要： A semiconductor device having a reliable contact is disclosed. The device includes a barrier film deposited on the bottom and side wall of a contact hole opened in a insulating film at a predetermined position; a first metal film filled in the contact hole; and a second metal film of low resistance for forming an interconnection which passes above the contact hole filled in with the first metal film. An oxide film is formed by oxidation on the barrier metal film. And a method of manufacturing the semiconductor device is disclosed. The method includes the steps of: after opening a contact hole at a predetermined position in an insulating film deposited on a semiconductor substrate, forming a barrier film in the bottom and side wall of the contact hole; filling the contact hole with a first metal film while heating the semiconductor substrate at a predetermined temperature; and depositing a second metal film over the surface of the semiconductor device and patterning the second metal film to form an interconnection which passes the contact hole that has been filled in with the first metal film.
摘要翻译：公开了具有可靠接触的半导体器件。该装置包括沉积在预定位置处在绝缘膜上开口的接触孔的底部和侧壁上的阻挡膜; 填充在接触孔中的第一金属膜; 以及用于形成互连件的低电阻的第二金属膜，其通过填充有第一金属膜的接触孔以上。在阻挡金属膜上通过氧化形成氧化膜。并且公开了一种制造半导体器件的方法。该方法包括以下步骤：在沉积在半导体衬底上的绝缘膜中的预定位置打开接触孔之后，在接触孔的底壁和侧壁中形成阻挡膜; 在第一金属膜上填充接触孔，同时在预定温度下加热半导体衬底; 以及在所述半导体器件的表面上沉积第二金属膜，并且对所述第二金属膜进行构图以形成通过已经填充有所述第一金属膜的所述接触孔的互连。

5. 发明授权

US06661088B1 Semiconductor integrated circuit device having interposer and method of manufacturing the same 有权
标题翻译：具有插入件的半导体集成电路器件及其制造方法
公开(公告)号：US06661088B1
公开(公告)日：2003-12-09
申请号：US09669724
申请日：2000-09-26
申请人： Takashi Yoda , Hirokazu Ezawa
发明人： Takashi Yoda , Hirokazu Ezawa
IPC分类号： H01L23053
CPC分类号： H01L23/481 , H01L21/76898 , H01L23/49816 , H01L23/49827 , H01L23/49833 , H01L27/228 , H01L2224/16225 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/13091 , H01L2924/15174 , H01L2924/15311 , H05K1/141
摘要： A semiconductor integrated circuit device has a semiconductor chip, interposer, and substrate. The semiconductor chip has a plurality of first pads arranged at first pitches on a surface. The interposer has a first surface and a second surface. On the first surface, a plurality of second pads are arranged at the first pitches. On said second surface, a plurality of third pads arranged at second pitches which are larger than the first pitches. The second pads and the first pads are connected to each other by joining the first surface of the interposer to the surface of the semiconductor chip so as to face each other. The substrate has a plurality of fourth pads arranged at the second pitches on a surface. The fourth pads and the third pads are connected to each other by joining the surface of the substrate to the second surface of the interposer so as to face each other.
摘要翻译：半导体集成电路器件具有半导体芯片，插入件和衬底。半导体芯片具有在表面上以第一间距布置的多个第一焊盘。插入器具有第一表面和第二表面。在第一表面上，以第一间距布置多个第二垫。在所述第二表面上，以比第一间距大的第二间距布置的多个第三衬垫。第二焊盘和第一焊盘通过将插入件的第一表面与半导体芯片的表面接合以彼此面对而彼此连接。衬底具有在表面上以第二间距布置的多个第四衬垫。第四焊盘和第三焊盘通过将基板的表面与插入件的第二表面接合以彼此面对而彼此连接。

6. 发明授权

US06432257B1 Dresser for polishing cloth and method for manufacturing such dresser and polishing apparatus 失效
标题翻译：抛光布修整器及其制造方法
公开(公告)号：US06432257B1
公开(公告)日：2002-08-13
申请号：US09018909
申请日：1998-02-05
申请人： Hiroshi Nagasaka , Momoko Kakutani , Kunio Tateishi , Naoaki Ogure , Takashi Yoda
发明人： Hiroshi Nagasaka , Momoko Kakutani , Kunio Tateishi , Naoaki Ogure , Takashi Yoda
IPC分类号： B24B500
CPC分类号： B24B53/017 , B24B37/04 , B24B53/12 , B24D18/00
摘要： A improved dresser for dressing a polishing surface, easily be manufactured such that an object to be polished is not scratched when the object is polished. The dresser can dress the polishing surface of a polishing apparatus to effect surface correction and to correct a time-lapse change due to a polishing operation, a number of spired projections are formed on a surface of a metallic substrate and a wear-resistant hard film is formed on at least a portion of the surface of the metallic substrate on which the projections are formed.
摘要翻译：可以容易地制造用于修整抛光表面的改进的修整器，使得抛光对象在被抛光时不被划伤。梳妆台可以打磨抛光装置的抛光表面以进行表面校正并且校正由于抛光操作引起的延时变化，在金属基底和耐磨硬膜的表面上形成多个喷射突起形成在其上形成有突起的金属基板的表面的至少一部分上。

7. 发明授权

US06410439B1 Semiconductor polishing apparatus and method for chemical/mechanical polishing of films 失效
标题翻译：半导体抛光装置及薄膜化学/机械抛光方法
公开(公告)号：US06410439B1
公开(公告)日：2002-06-25
申请号：US09527528
申请日：2000-03-16
申请人： Masako Kodera , Takashi Yoda , Motosuke Miyoshi
发明人： Masako Kodera , Takashi Yoda , Motosuke Miyoshi
IPC分类号： H01L21302
CPC分类号： B24B37/013 , H01L21/30625 , H01L21/31053
摘要： In the CMP of films of semiconductor devices, pulsed measuring radiation is directed onto a surface to be polished of a rotating wafer. At this point, the pulse repetition rate of the pulsed measuring radiation is determined so that the pulse measuring radiation is directed only onto a specified portion of the surface of each semiconductor device. Thereby, reflection data can be obtained only from the specified portion of a film to be polished, allowing accurate measurements of the thickness of the specified portion of the film in the middle of polishing.
摘要翻译：在半导体器件的CMP的CMP中，脉冲测量辐射被引导到旋转晶片抛光的表面上。此时，脉冲测量辐射的脉冲重复率被确定为使得脉冲测量辐射仅指向每个半导体器件的表面的指定部分。由此，只能从要被研磨的膜的指定部分获得反射数据，从而可以精确地测量抛光中间的膜的指定部分的厚度。

8. 发明申请

US20060024952A1 Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20060024952A1
公开(公告)日：2006-02-02
申请号：US11136494
申请日：2005-05-25
申请人： Hiroshi Ikenoue , Hisashi Kaneko , Masaaki Hatano , Soichi Yamashita , Takashi Yoda , Makoto Sekine
发明人： Hiroshi Ikenoue , Hisashi Kaneko , Masaaki Hatano , Soichi Yamashita , Takashi Yoda , Makoto Sekine
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76862 , H01L21/76807 , H01L21/76831 , H01L21/76846 , H01L21/76873
摘要： A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic plating.
摘要翻译：根据本发明的一个方面的制造半导体器件的方法包括在衬底上形成Cu的种子膜; 使形成在基板上的种子膜多晶化; 并通过电解电镀在多晶种子膜上形成Cu的镀膜。

9. 发明申请

US20120070676A1 ORGANOSILOXANE RESIN COMPOSITION AND LAMINATE COMPRISING THE SAME 审中-公开
标题翻译：有机硅氧烷树脂组合物和包含该组合物的层合物
公开(公告)号：US20120070676A1
公开(公告)日：2012-03-22
申请号：US13322250
申请日：2010-05-25
申请人： Ryo Niimi , Takashi Yoda , Yume Morita
发明人： Ryo Niimi , Takashi Yoda , Yume Morita
IPC分类号： B32B27/08 , C08K13/02 , C08K3/22 , C09D183/04 , B82Y30/00
CPC分类号： B32B27/28 , C08L83/04 , C08L83/14 , Y10T428/31663
摘要： An organosiloxane resin composition which greatly improves the weatherability, hot water resistance and durability against environmental variations and a high-temperature environment of a substrate, imparts excellent abrasion resistance and has high optical transparency and a laminate.The organosiloxane resin composition comprises (A) colloidal silica (component A), (B) a hydrolyzed and condensed product of an alkoxysilane (component B), (C) a hydrolyzed and condensed product of an alkoxysilane having high hydrophobic nature (component C) and (D) a metal oxide (component D).
摘要翻译：大大提高耐候性，耐热水性和耐环境变化耐久性以及基板的高温环境的有机硅氧烷树脂组合物赋予了优异的耐磨性，并且具有高的光学透明性和层压体。有机硅氧烷树脂组合物包含（A）胶态二氧化硅（A成分），（B）烷氧基硅烷（B成分）的水解缩合物，（C）疏水性高的烷氧基硅烷的水解缩合物（C成分）和（D）金属氧化物（D成分）。

10. 发明授权

US06828684B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06828684B2
公开(公告)日：2004-12-07
申请号：US10392967
申请日：2003-03-21
申请人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
发明人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
IPC分类号： H01L2348
CPC分类号： H01L23/53238 , H01L21/0217 , H01L21/02274 , H01L21/02307 , H01L21/02315 , H01L21/3122 , H01L21/76838 , H01L24/11 , H01L2224/13099 , H01L2224/45144 , H01L2224/45147 , H01L2924/00011 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/12042 , H01L2924/19043 , H01L2924/30105 , Y10S438/959 , H01L2924/00 , H01L2924/01005 , H01L2924/01004 , H01L2924/00014
摘要： There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.
摘要翻译：提供一种半导体器件，其包括半导体衬底和在半导体衬底之上的导电层，其中导电层包含铜，导电层的表面区域包含CH键和CC键中的至少一个，并且总量C 形成CH键的原子和在表面区域中形成CC键的C原子在表面区域中的元素的总量为30原子％以上。

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