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1. 发明授权

US5070815A MOCVD device for growing a semiconductor layer by the metal-organic chemical vapor deposition process 失效
标题翻译：用于通过金属 - 有机化学气相沉积工艺生长半导体层的MOCVD器件
公开(公告)号：US5070815A
公开(公告)日：1991-12-10
申请号：US667891
申请日：1991-03-12
申请人： Kazumi Kasai , Hiromi Itoh , Hitoshi Tanaka , Nobuaki Tomesakai
发明人： Kazumi Kasai , Hiromi Itoh , Hitoshi Tanaka , Nobuaki Tomesakai
IPC分类号： C23C16/455 , C23C16/48
CPC分类号： C23C16/481 , C23C16/455
摘要： A MOCVD apparatus comprises a base, an outer vessel extending upward from the base to form a closed space between the base and the outer vessel, an inner vessel provided in the space such that the inner vessel extends upward from the base in correspondence to the outer vessel to form a closed second space and forming a reaction chamber between the outer vessel and the inner vessel, a gas inlet formed at an upper end of the outer vessel for introducing a source gas into the reaction chamber, a gas outlet formed at the base in correspondence to the reaction chamber for evacuating the reaction chamber, the outer vessel and inner vessel being configured to induce a directional flow of gas in the reaction chamber from the gas inlet to the base, a susceptor provided on the inner vessel to extend generally parallel to the directional flow of the gas for supporting a substrate thereon, a plurality of ring-shaped lamps provided in the second space with a substantially concentric relationship with each other such that each ring defines a major plane that extends parallel to an upper major surface of the base, the plurality of ring-shaped lamps being disposed at respective levels separated from each other when measured from the upper major surface of the base, and a control unit for energizing each of the ring-shaped lamps such that the lamps close to the gas inlet is driven by an electric power that is larger than the lamps heating a middle level par of the substrate.
摘要翻译： MOCVD装置包括底座，从底座向上延伸的外容器，以在底座和外容器之间形成封闭空间，内部容器设置在该空间中，使得内容器从底座向上延伸，容器以形成封闭的第二空间并在外容器和内容器之间形成反应室，形成在外容器的上端的气体入口用于将源气体引入反应室，形成在基体的气体出口对应于用于抽空反应室的反应室，外容器和内容器构造成引导反应室中的气体从气体入口到基底的定向流动，设置在内容器上的基座大致平行地延伸对于用于支撑基板的气体的定向流动，设置在第二空间中的多个环形灯具有基本上同心的关系wi 使得每个环限定平行于基部的上主表面延伸的主平面，所述多个环形灯被设置在从基座的上主表面测量时彼此分离的相应水平处，以及控制单元，用于对每个环形灯进行通电，使得靠近气体入口的灯被大于加热基板的中间电平的灯的电力驱动。

2. 发明授权

US4883020A Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor 失效
标题翻译：用于生长化合物半导体外延层的金属有机化学气相沉积装置
公开(公告)号：US4883020A
公开(公告)日：1989-11-28
申请号：US320922
申请日：1989-03-08
申请人： Kazumi Kasai , Hiromi Itoh , Hitoshi Tanaka , Tatsuya Oh-hori , Junji Komeno
发明人： Kazumi Kasai , Hiromi Itoh , Hitoshi Tanaka , Tatsuya Oh-hori , Junji Komeno
IPC分类号： H01L21/205 , C30B25/08 , H01L21/383
CPC分类号： C30B25/08
摘要： A transfer chamber is provided between MOCVD reaction chamber and load lock chamber, connected to each chamber through an opening for each, for preventing the reaction chamber from the invasion of foreign gases, which may oxydize metals of MOCVD. The load lock chamber can be evacuated or filled with an inert gas, and has a door to the outside for bringing semiconductor wafers in or out. The transfer chamber is provided with a gas inlet and a gas outlet, through each of them an inert gas is always fed and drained for circulation, and also provided with a transfer mechanism therein for transferring wafers between the load lock chamber and the reaction chamber. Wafers are placed on a susceptor connected to the lid, which is driven by the transfer mechanism. A liner tube for protecting the inner surface of the reaction chamber from undesirable contamination caused by MOCVD reaction may be provided detachably attached to the lid to enclose the wafer. Each opening may be provided with shutter means for sealing each opening while the opening is not sealed by the lid. Oxygen or water vapor undesirably introduced are washed away by the flow of inert gas in the transfer chamber on the way to the reaction chamber.
摘要翻译：在MOCVD反应室和负载锁定室之间提供传送室，通过每个室的开口连接到每个室，用于防止反应室受到可能氧化MOCVD金属的外来气体的侵入。负载锁定室可以被抽真空或填充惰性气体，并且具有到外部的门以使半导体晶片进入或者退出。传送室设置有气体入口和气体出口，通过它们中的每一个，惰性气体总是被输送和排出以循环，并且还设置有用于在载荷锁定室和反应室之间传送晶片的传送机构。晶片被放置在连接到由传送机构驱动的盖子的基座上。用于保护反应室的内表面的衬管不受MOCVD反应引起的不良污染，可以提供可拆卸地附接到盖以封闭晶片。每个开口可以设置有用于密封每个开口的快门装置，同时开口不被盖子密封。在通向反应室的途中，不希望地引入的氧气或水蒸汽被传送室中的惰性气体流除去。

3. 发明申请

US20070209677A1 Self-Cleaning Catalytic Chemical Vapor Deposition Apparatus And Cleaning Method Thereof 审中-公开
标题翻译：自清洁催化化学气相沉积装置及其清洗方法
公开(公告)号：US20070209677A1
公开(公告)日：2007-09-13
申请号：US10591905
申请日：2005-03-10
申请人： Makiko Kitazoe , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
发明人： Makiko Kitazoe , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
IPC分类号： C23C16/00 , B08B5/00 , B08B3/12
CPC分类号： C23C16/4405
摘要： Provided is a self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. With conductors 5a, 5b which supply a constant current to a catalytic body 4 within a reaction chamber 2 from a heating power supply 6 and terminals 6a, 6b of the heating power supply 6 kept electrically insulated from the reaction chamber 2, a cleaning gas containing halogen elements is introduced into the reaction chamber 2 which has been evacuated, and the catalytic body 4 is heated by the energization from the heating power supply 6. An active species generated by this heating is caused to react with an adhering film which adheres to the interior of the reaction chamber 2, whereby the adhering film is removed. During this removal of the adhering film, a DC bias voltage having an appropriate polarity and an appropriate value is applied from a constant-voltage power supply 8 to the conductor 5b of the heating power supply 6.
摘要翻译：提供了一种自清洁催化化学气相沉积装置，其通过清洁气体抑制催化剂体的腐蚀引起的降解，而不将催化剂体加热至不低于2000℃，并且以低成本实现了实际的清洗率和良好的清洁。利用从加热电源6向加热电源6的反应室2内的催化体4供给恒定电流的导体5a，5b与加热电源6的端子6a，6b保持与反应室2电绝缘，将含有卤素元素的清洁气体引入已经被抽真空的反应室2中，并且通过来自加热电源6的激励来加热催化剂体4.通过该加热产生的活性物质与粘合膜反应其粘附到反应室2的内部，由此去除粘附膜。在去除粘合膜期间，从恒压电源8向加热电源6的导体5b施加具有适当极性和适当值的DC偏置电压。

4. 发明授权

US5519237A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US5519237A
公开(公告)日：1996-05-21
申请号：US264117
申请日：1994-06-22
申请人： Hiromi Itoh , Tomonori Okudaira , Keiichiro Kashihara
发明人： Hiromi Itoh , Tomonori Okudaira , Keiichiro Kashihara
IPC分类号： H01L27/10 , H01L27/108 , H01L29/68
CPC分类号： H01L27/10808
摘要： A first interlayer insulating film having a second contact hole is formed on a main surface of a semiconductor substrate 1 in a peripheral circuitry. A second plug electrode of the same material as a first plug electrode in a memory cell array is formed in the second contact hole. A pad layer is formed over the second plug electrode and a top surface of the first interlayer insulating film. The pad layer and a capacitor lower electrode are made of the same material. The pad layer is covered with the second interlayer insulating film. A third contact hole is formed at a portion of the second interlayer insulating film located above the pad layer. A first aluminum interconnection layer is formed in the third contact hole. Thereby, a contact can be formed easily between the interconnection layer and the main surface of the semiconductor substrate in the peripheral circuitry of a DRAM, and a manufacturing process can be simplified.
摘要翻译：具有第二接触孔的第一层间绝缘膜形成在外围电路中的半导体衬底1的主表面上。在第二接触孔中形成有与存储单元阵列中的第一插头电极相同材料的第二插头电极。在第二插头电极和第一层间绝缘膜的顶表面上形成衬垫层。焊盘层和电容器下电极由相同的材料制成。衬垫层被第二层间绝缘膜覆盖。在位于焊盘层上方的第二层间绝缘膜的一部分处形成第三接触孔。在第三接触孔中形成第一铝互连层。因此，可以在DRAM的外围电路中的互连层和半导体衬底的主表面之间容易地形成接触，并且可以简化制造工艺。

5. 发明授权

US4839196A Photochemical film-forming method 失效
标题翻译：光化学成膜法
公开(公告)号：US4839196A
公开(公告)日：1989-06-13
申请号：US134570
申请日：1987-12-14
申请人： Hiromi Itoh
发明人： Hiromi Itoh
IPC分类号： C23C16/48 , H01L21/205 , H01L21/263 , H01L21/31
CPC分类号： C23C16/483
摘要： An apparatus for photochemically forming a film on a substrate using a photo-induced chemical vapor deposition method comprises an optical lens through which a light beam is radiated to a reactive atmosphere gas to deposit and grow a film uniform in thickness on a substrate.
摘要翻译：使用光致化学气相沉积方法在基板上光化学形成膜的装置包括光学透镜，通过光学透镜将光束照射到反应性气氛气体上以沉积并在衬底上生长厚度均匀的膜。

6. 发明授权

US06746876B2 Capacitor manufacturing method having dielectric formed before electrode 失效
标题翻译：在电极之前形成电介质的电容器制造方法
公开(公告)号：US06746876B2
公开(公告)日：2004-06-08
申请号：US10310765
申请日：2002-12-06
申请人： Hiromi Itoh , Yoshikazu Tsunemine , Keiichiro Kashihara , Akie Yutani , Tomonori Okudaira
发明人： Hiromi Itoh , Yoshikazu Tsunemine , Keiichiro Kashihara , Akie Yutani , Tomonori Okudaira
IPC分类号： H01L218242
CPC分类号： H01L28/55 , H01L28/91
摘要： A method for manufacturing a capacitor is provided which can form a lower electrode having a high aspect ratio without suffering deterioration of the capacitor electric characteristics even when a platinum-group metal is adopted as the material of the lower electrode and a metal oxide having a high dielectric constant is adopted as the material of the dielectric film. Holes (8) that reach contact plugs (2) are formed in an insulating film (7). Then a dielectric film (9) is formed on the surfaces of the holes (8). Next the dielectric film (9) on the bottoms of the holes (8) are etched away to form holes (18) reaching the contact plugs (2). Lower electrodes (11) are then formed to fill the holes (8) and (18).
摘要翻译：提供了一种用于制造电容器的方法，即使当采用铂族金属作为下电极的材料时，也可形成具有高纵横比的下电极，而不会降低电容器的电特性，并且具有高的金属氧化物采用介电常数作为电介质膜的材料。到达接触塞（2）的孔（8）形成在绝缘膜（7）中。然后在孔（8）的表面上形成介电膜（9）。接下来，蚀刻掉孔（8）的底部上的电介质膜（9），以形成到达接触塞（2）的孔（18）。然后形成下电极（11）以填充孔（8）和（18）。

7. 发明授权

US5972748A Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US5972748A
公开(公告)日：1999-10-26
申请号：US969963
申请日：1997-11-25
申请人： Hiromi Itoh , Tomonori Okudaira , Keiichiro Kashihara
发明人： Hiromi Itoh , Tomonori Okudaira , Keiichiro Kashihara
IPC分类号： H01L27/10 , H01L27/108 , H01L21/8242
CPC分类号： H01L27/10808
摘要： A first interlayer insulating film having a second contact hole is formed on a main surface of a semiconductor substrate 1 in a peripheral circuitry. A second plug electrode of the same material as a first plug electrode in a memory cell array is formed in the second contact hole. A pad layer is formed over the second plug electrode and a top surface of the first interlayer insulating film. The pad layer and a capacitor lower electrode are made of the same material. The pad layer is covered with the second interlayer insulating film. A third contact hole is formed at a portion of the second interlayer insulating film located above the pad layer. A first aluminum interconnection layer is formed in the third contact hole. Thereby, a contact can be formed easily between the interconnection layer and the main surface of the semiconductor substrate in the peripheral circuitry of a DRAM, and a manufacturing process can be simplified.
摘要翻译：具有第二接触孔的第一层间绝缘膜形成在外围电路中的半导体衬底1的主表面上。在第二接触孔中形成有与存储单元阵列中的第一插头电极相同材料的第二插头电极。在第二插头电极和第一层间绝缘膜的顶表面上形成衬垫层。焊盘层和电容器下电极由相同的材料制成。衬垫层被第二层间绝缘膜覆盖。在位于焊盘层上方的第二层间绝缘膜的一部分处形成第三接触孔。在第三接触孔中形成第一铝互连层。因此，可以在DRAM的外围电路中的互连层和半导体衬底的主表面之间容易地形成接触，并且可以简化制造工艺。

8. 发明授权

US5429991A Method of forming thin film for semiconductor device 失效
标题翻译：形成半导体器件薄膜的方法
公开(公告)号：US5429991A
公开(公告)日：1995-07-04
申请号：US74516
申请日：1993-06-11
申请人： Masanobu Iwasaki , Hiromi Itoh
发明人： Masanobu Iwasaki , Hiromi Itoh
IPC分类号： C23C16/02 , C23C16/08 , C23C16/54 , H01L21/285 , H01L21/3205
CPC分类号： C23C16/0272 , C23C16/08 , C23C16/54 , H01L21/28556 , H01L21/32051
摘要： A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming the thin film onto the surface of the intermediate layer, forming nuclei on the surface of the intermediate layer by introducing a silane-system gas onto the activated surface of the intermediate layer, and introducing the halide gas and a reducing gas onto the surface of the intermediate layer formed with the nuclei, thereby depositing the metal thin film on the surface of the intermediate layer.
摘要翻译：一种形成用于半导体器件的薄膜的方法，用于通过化学气相沉积在设置在基板上的中间层上形成金属薄膜包括以下步骤：通过引入中间层的表面来引入卤化物气体用于在中间层的表面上形成薄膜的金属，通过将硅烷系气体引入到中间层的活化表面上，在中间层的表面上形成核，并将卤化物气体和还原气体引入到中间层的表面形成有核，从而将金属薄膜沉积在中间层的表面上。

9. 发明授权

US4732793A Method and apparatus for laser-induced CVD 失效
标题翻译：用于激光诱导CVD的方法和装置
公开(公告)号：US4732793A
公开(公告)日：1988-03-22
申请号：US10582
申请日：1987-02-03
申请人： Hiromi Itoh
发明人： Hiromi Itoh
IPC分类号： H01L21/31 , C23C16/48 , H01L21/205 , H01L21/263 , B05D3/06
CPC分类号： C23C16/482 , C23C16/483
摘要： A laser-induced CVD method in accordance with this invention comprises the steps of: setting a substrate in a reactive gas; applying a laser beam to the reactive gas to decompose it and produce not only free radicals but also ions due to multiphoton absorption; and applying an electric field thereby to efficiently transport the ions toward the substrate and deposit a thin film on the substrate at an increased deposition rate.
摘要翻译：根据本发明的激光诱导CVD方法包括以下步骤：将反应气体中的衬底设置; 将激光束施加到反应气体以分解它，并且不仅产生自由基，而且由于多光子吸收而产生离子; 并且施加电场，从而有效地将离子输送到衬底，并以增加的沉积速率在衬底上沉积薄膜。

10. 发明申请

US20120145184A1 SELF-CLEANING CATALYTIC CHEMICAL VAPOR DEPOSITION APPARATUS AND CLEANING METHOD THEREOF 审中-公开
标题翻译：自清洁催化剂蒸气沉积装置及其清洗方法
公开(公告)号：US20120145184A1
公开(公告)日：2012-06-14
申请号：US13398594
申请日：2012-02-16
申请人： Makiko KITAZOE , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
发明人： Makiko KITAZOE , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
IPC分类号： B08B3/10 , B08B7/04 , B08B5/00
CPC分类号： C23C16/4405
摘要： A self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. Conductors supply a constant current to a catalytic body within a reaction chamber from a heating power supply. Terminals of the heating power supply are electrically insulated from the reaction chamber. A cleaning gas containing halogen elements is introduced into the evacuated reaction chamber. The catalytic body is heated by the heating power supply. An active species generated by this heating reacts with an adhering film adhered to the interior of the reaction chamber, which is removed. During this removal, a DC bias voltage with appropriate polarity and appropriate value is applied from a constant-voltage power supply to the conductor of the heating power supply.
摘要翻译：一种自清洁催化化学气相沉积装置，其通过清洁气体抑制催化体的腐蚀引起的降解，而不将催化剂体加热至不低于2000℃，并且以低成本实现了实际的清洗率和良好的清洁。导体从加热电源向反应室内的催化体提供恒定电流。加热电源的端子与反应室电绝缘。将含有卤元素的清洁气体引入抽空的反应室中。催化剂体被加热电源加热。通过该加热产生的活性物质与粘附到反应室内部的粘附膜反应，其被除去。在该移除期间，从恒定电压电源向加热电源的导体施加具有适当极性和适当值的DC偏置电压。

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