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    • 2. 发明授权
    • Deposition apparatus for growing a material with reduced hazard
    • 用于生长危害减小的材料的沉积设备
    • US5833754A
    • 1998-11-10
    • US789193
    • 1991-11-08
    • Hiromi ItoKazushige ShiinaTatsuya OhoriHitoshi TanakaNobuaki Tomesakai
    • Hiromi ItoKazushige ShiinaTatsuya OhoriHitoshi TanakaNobuaki Tomesakai
    • C30B25/08C23C16/54H01L21/205C23C16/00
    • C23C16/54
    • An apparatus for growing a material at high temperature and employing a reaction gas. A reaction vessel is formed of a metal sidewall having outer and inner surfaces, the inner surface surrounding and defining a reaction chamber within the reaction vessel and which is generally vertically oriented. A cooling system maintains the metal sidewall of the reaction vessel at a temperature at which the metal does not produce contamination within the reaction chamber as a result of the high temperature operation, the reactant gases introduced into the reaction chamber or the product gases resultant from the reaction. A support mechanism includes a generally vertically oriented rod member which supports a susceptor, adapted to hold a wafer on which the material is to be grown, within the bottom part of the reaction chamber and, further, seals the reaction chamber. A sleeve is disposed closely adjacent to but spaced from the inner surface of the generally cylindrical metal sidewall portion and is of a material which remains stable at the high temperature of the reaction required for growing the material.
    • 一种用于在高温下生长材料并使用反应气体的装置。 反应容器由具有外表面和内表面的金属侧壁形成,内表面围绕并在反应容器内限定反应室,并且通常垂直定向。 冷却系统将反应容器的金属侧壁保持在由于高温操作而导致反应室内的金属不会在反应室内产生污染的温度,引入反应室的反应气体或由反应器产生的产物气体 反应。 支撑机构包括一个大致垂直取向的杆件,该杆件支撑一个基座,适于在该反应室的底部内容纳待生长材料的晶片,并进一步密封该反应室。 套筒靠近但与大致圆柱形的金属侧壁部分的内表面间隔开,并且是在生长材料所需反应的高温下保持稳定的材料。
    • 3. 发明授权
    • MOCVD device for growing a semiconductor layer by the metal-organic
chemical vapor deposition process
    • 用于通过金属 - 有机化学气相沉积工艺生长半导体层的MOCVD器件
    • US5070815A
    • 1991-12-10
    • US667891
    • 1991-03-12
    • Kazumi KasaiHiromi ItohHitoshi TanakaNobuaki Tomesakai
    • Kazumi KasaiHiromi ItohHitoshi TanakaNobuaki Tomesakai
    • C23C16/455C23C16/48
    • C23C16/481C23C16/455
    • A MOCVD apparatus comprises a base, an outer vessel extending upward from the base to form a closed space between the base and the outer vessel, an inner vessel provided in the space such that the inner vessel extends upward from the base in correspondence to the outer vessel to form a closed second space and forming a reaction chamber between the outer vessel and the inner vessel, a gas inlet formed at an upper end of the outer vessel for introducing a source gas into the reaction chamber, a gas outlet formed at the base in correspondence to the reaction chamber for evacuating the reaction chamber, the outer vessel and inner vessel being configured to induce a directional flow of gas in the reaction chamber from the gas inlet to the base, a susceptor provided on the inner vessel to extend generally parallel to the directional flow of the gas for supporting a substrate thereon, a plurality of ring-shaped lamps provided in the second space with a substantially concentric relationship with each other such that each ring defines a major plane that extends parallel to an upper major surface of the base, the plurality of ring-shaped lamps being disposed at respective levels separated from each other when measured from the upper major surface of the base, and a control unit for energizing each of the ring-shaped lamps such that the lamps close to the gas inlet is driven by an electric power that is larger than the lamps heating a middle level par of the substrate.
    • MOCVD装置包括底座,从底座向上延伸的外容器,以在底座和外容器之间形成封闭空间,内部容器设置在该空间中,使得内容器从底座向上延伸, 容器以形成封闭的第二空间并在外容器和内容器之间形成反应室,形成在外容器的上端的气体入口用于将源气体引入反应室,形成在基体的气体出口 对应于用于抽空反应室的反应室,外容器和内容器构造成引导反应室中的气体从气体入口到基底的定向流动,设置在内容器上的基座大致平行地延伸 对于用于支撑基板的气体的定向流动,设置在第二空间中的多个环形灯具有基本上同心的关系wi 使得每个环限定平行于基部的上主表面延伸的主平面,所述多个环形灯被设置在从基座的上主表面测量时彼此分离的相应水平处, 以及控制单元,用于对每个环形灯进行通电,使得靠近气体入口的灯被大于加热基板的中间电平的灯的电力驱动。