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1. 发明授权

US06746876B2 Capacitor manufacturing method having dielectric formed before electrode 失效
标题翻译：在电极之前形成电介质的电容器制造方法
公开(公告)号：US06746876B2
公开(公告)日：2004-06-08
申请号：US10310765
申请日：2002-12-06
申请人： Hiromi Itoh , Yoshikazu Tsunemine , Keiichiro Kashihara , Akie Yutani , Tomonori Okudaira
发明人： Hiromi Itoh , Yoshikazu Tsunemine , Keiichiro Kashihara , Akie Yutani , Tomonori Okudaira
IPC分类号： H01L218242
CPC分类号： H01L28/55 , H01L28/91
摘要： A method for manufacturing a capacitor is provided which can form a lower electrode having a high aspect ratio without suffering deterioration of the capacitor electric characteristics even when a platinum-group metal is adopted as the material of the lower electrode and a metal oxide having a high dielectric constant is adopted as the material of the dielectric film. Holes (8) that reach contact plugs (2) are formed in an insulating film (7). Then a dielectric film (9) is formed on the surfaces of the holes (8). Next the dielectric film (9) on the bottoms of the holes (8) are etched away to form holes (18) reaching the contact plugs (2). Lower electrodes (11) are then formed to fill the holes (8) and (18).
摘要翻译：提供了一种用于制造电容器的方法，即使当采用铂族金属作为下电极的材料时，也可形成具有高纵横比的下电极，而不会降低电容器的电特性，并且具有高的金属氧化物采用介电常数作为电介质膜的材料。到达接触塞（2）的孔（8）形成在绝缘膜（7）中。然后在孔（8）的表面上形成介电膜（9）。接下来，蚀刻掉孔（8）的底部上的电介质膜（9），以形成到达接触塞（2）的孔（18）。然后形成下电极（11）以填充孔（8）和（18）。

2. 发明申请

US20090321848A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090321848A1
公开(公告)日：2009-12-31
申请号：US12556003
申请日：2009-09-09
申请人： Kazuhito Ichinose , Akie Yutani
发明人： Kazuhito Ichinose , Akie Yutani
IPC分类号： H01L23/48 , H01L29/78
CPC分类号： H01L21/823443 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/76814 , H01L21/76843 , H01L21/76895 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A method of manufacturing a semiconductor device according to the present invention includes the steps of introducing first impurities of a first conductivity type into a main surface of a semiconductor substrate 1 to form a first impurity region, introducing second impurities of a second conductivity type to form a second impurity region, forming a first nickel silicide film on the first impurity region and forming a second nickel silicide film on the second impurity region, removing an oxide film formed on each of the first and second nickel silicide films by using a mixed gas having an NH3 gas and a gas containing a hydrogen element mixed therein, and forming a first conducting film on the first nickel silicide film and forming a second conducting film on the second nickel silicide film, with the oxide film removed.
摘要翻译：根据本发明的制造半导体器件的方法包括以下步骤：将第一导电类型的第一杂质引入半导体衬底1的主表面以形成第一杂质区，引入第二导电类型的第二杂质形成第二杂质区，在所述第一杂质区上形成第一硅化镍膜，在所述第二杂质区上形成第二硅化镍膜，通过使用混合气体除去形成在所述第一和第二硅化镍膜上的氧化膜， NH 3气体和含有氢元素的气体混合，在第一硅化镍膜上形成第一导电膜，在第二硅化镍膜上形成第二导电膜，除去氧化物膜。

3. 发明申请

US20060113676A1 Semiconductor device and method of manufacture thereof 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060113676A1
公开(公告)日：2006-06-01
申请号：US11269799
申请日：2005-11-09
申请人： Kazuhito Ichinose , Akie Yutani
发明人： Kazuhito Ichinose , Akie Yutani
IPC分类号： H01L23/48
CPC分类号： H01L23/53223 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A barrier metal layer having a two-layer structure of a titanium film and a titanium nitride film is formed on the inner surface of a through hole. The titanium film and the titanium nitride film are formed on a main surface of an interlayer insulating film as well. In forming the barrier metal layer, a deposition device is used that is capable of high-directivity sputtering using a titanium target, and includes a substrate bias system biasing a semiconductor substrate to a high frequency voltage to attract sputter particles from the titanium target to the semiconductor substrate. This allows the titanium nitride film to be formed as an amorphous metal film.
摘要翻译：在通孔的内表面上形成具有钛膜和氮化钛膜的两层结构的阻挡金属层。钛膜和氮化钛膜也形成在层间绝缘膜的主表面上。在形成阻挡金属层时，使用能够使用钛靶进行高指向性溅射的沉积装置，并且包括将半导体衬底偏压到高频电压的衬底偏置系统，以将溅射颗粒从钛靶吸引到半导体衬底。这样可以使氮化钛膜形成为非晶金属膜。

4. 发明申请

US20120037968A1 SOLID-STATE IMAGE SENSING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：固态图像感测装置及其制造方法
公开(公告)号：US20120037968A1
公开(公告)日：2012-02-16
申请号：US13265513
申请日：2009-04-24
申请人： Akie Yutani , Yasutaka Nishioka
发明人： Akie Yutani , Yasutaka Nishioka
IPC分类号： H01L31/02
CPC分类号： H01L27/14685 , H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14643 , H01L27/14689
摘要： By selectively anisotropically etching a stack film formed to cover a plurality of photodiodes and a gate electrode layer of a MOS transistor, the stack film remains on each of the plurality of photodiodes to form a lower antireflection coating and the stack film remains on a sidewall of the gate electrode layer to form a sidewall. Using the gate electrode layer and the sidewall as a mask, an impurity is introduced to form a source/drain region of the MOS transistor. After the impurity was introduced, an upper antireflection coating is formed at least on a lower antireflection coating. At least any of the upper antireflection coating and the lower antireflection coating is etched such that the antireflection coatings on the two respective photodiodes are different in thickness from each other.
摘要翻译：通过选择性地各向异性地蚀刻形成为覆盖多个光电二极管的堆叠膜和MOS晶体管的栅极电极层，堆叠膜保留在多个光电二极管中的每一个上，以形成较低的抗反射涂层，并且堆叠膜保留在栅电极层形成侧壁。使用栅极电极层和侧壁作为掩模，引入杂质以形成MOS晶体管的源极/漏极区域。在引入杂质之后，至少在较低的抗反射涂层上形成上部抗反射涂层。蚀刻上部抗反射涂层和下部抗反射涂层中的至少一个，使得两个相应光电二极管上的抗反射涂层的厚度彼此不同。

5. 发明授权

US07598171B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07598171B2
公开(公告)日：2009-10-06
申请号：US11619790
申请日：2007-01-04
申请人： Kazuhito Ichinose , Akie Yutani
发明人： Kazuhito Ichinose , Akie Yutani
IPC分类号： H01L21/44
CPC分类号： H01L21/823443 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/76814 , H01L21/76843 , H01L21/76895 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A method of manufacturing a semiconductor device according to the present invention includes the steps of introducing first impurities of a first conductivity type into a main surface of a semiconductor substrate 1 to form a first impurity region, introducing second impurities of a second conductivity type to form a second impurity region, forming a first nickel silicide film on the first impurity region and forming a second nickel silicide film on the second impurity region, removing an oxide film formed on each of the first and second nickel silicide films by using a mixed gas having an NH3 gas and a gas containing a hydrogen element mixed therein, and forming a first conducting film on the first nickel silicide film and forming a second conducting film on the second nickel silicide film, with the oxide film removed.
摘要翻译：根据本发明的制造半导体器件的方法包括以下步骤：将第一导电类型的第一杂质引入半导体衬底1的主表面以形成第一杂质区，引入第二导电类型的第二杂质形成第二杂质区，在所述第一杂质区上形成第一硅化镍膜，在所述第二杂质区上形成第二硅化镍膜，通过使用混合气体除去形成在所述第一和第二硅化镍膜上的氧化膜， NH 3气体和含有氢元素的气体混合，在第一硅化镍膜上形成第一导电膜，在第二硅化镍膜上形成第二导电膜，除去氧化物膜。

6. 发明申请

US20070161218A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070161218A1
公开(公告)日：2007-07-12
申请号：US11619790
申请日：2007-01-04
申请人： Kazuhito Ichinose , Akie Yutani
发明人： Kazuhito Ichinose , Akie Yutani
IPC分类号： H01L21/265
CPC分类号： H01L21/823443 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/76814 , H01L21/76843 , H01L21/76895 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A method of manufacturing a semiconductor device according to the present invention includes the steps of introducing first impurities of a first conductivity type into a main surface of a semiconductor substrate 1 to form a first impurity region, introducing second impurities of a second conductivity type to form a second impurity region, forming a first nickel silicide film on the first impurity region and forming a second nickel silicide film on the second impurity region, removing an oxide film formed on each of the first and second nickel silicide films by using a mixed gas having an NH3 gas and a gas containing a hydrogen element mixed therein, and forming a first conducting film on the first nickel silicide film and forming a second conducting film on the second nickel silicide film, with the oxide film removed.
摘要翻译：根据本发明的制造半导体器件的方法包括以下步骤：将第一导电类型的第一杂质引入半导体衬底1的主表面以形成第一杂质区，引入第二导电类型的第二杂质形成第二杂质区，在所述第一杂质区上形成第一硅化镍膜，在所述第二杂质区上形成第二硅化镍膜，通过使用混合气体除去形成在所述第一和第二硅化镍膜上的氧化膜， NH 3气体和含有氢元素的气体混合，并在第一硅化镍膜上形成第一导电膜，并在第二硅化镍膜上形成第二导电膜，氧化膜删除。

7. 发明授权

US06686621B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06686621B2
公开(公告)日：2004-02-03
申请号：US10196951
申请日：2002-07-18
申请人： Akie Yutani
发明人： Akie Yutani
IPC分类号： H01L2978
CPC分类号： H01L28/91 , H01L27/10855
摘要： A semiconductor device which includes a capacitor wherein the capacitance of the capacitor can be prevented from being lowered even in the case that the capacitor is miniaturized. A core insulating film having the core of the capacitor formed above a semiconductor substrate, a capacitor lower electrode formed so as to cover side surfaces of this core insulating film, a capacitor dielectric film formed so as to cover the surface of this capacitor lower electrode and the upper surface of the core insulating film and a capacitor upper electrode formed so as to cover the surface of this core insulating film are provided so that the bottom surface of the core insulating film is positioned lower than the bottom surface of the capacitor lower electrode.
摘要翻译：包括电容器的半导体器件，其中即使在电容器小型化的情况下，也可以防止电容器的电容降低。在半导体衬底上形成具有电容器芯的芯绝缘膜，形成为覆盖该芯绝缘膜的侧表面的电容器下电极，形成为覆盖该电容器下电极的表面的电容器电介质膜，以及设置芯绝缘膜的上表面和形成为覆盖该芯绝缘膜的表面的电容器上电极，使得芯绝缘膜的底面位于比电容器下电极的底面低的位置。

8. 发明授权

US06344400B1 Method of manufacturing capacitor 失效
标题翻译：制造电容器的方法
公开(公告)号：US06344400B1
公开(公告)日：2002-02-05
申请号：US09539885
申请日：2000-03-31
申请人： Akie Yutani
发明人： Akie Yutani
IPC分类号： H01L2120
CPC分类号： H01L28/60 , H01L27/10814 , H01L28/55
摘要： Referring to a capacitor having a capacitor dielectric film made of a high dielectric film, it is possible to obtain a method of manufacturing a semiconductor device capable of forming a fine storage node made of a noble metal. A polysilicon film is formed over a whole face of an interlayer insulating film (9), and is then subjected to anisotropic dry etching by using, as a mask, a resist having a predetermined opening pattern. Consequently, a polysilicon film (22a) is formed in contact with a plug layer (11). Next, a noble metal element is substituted for a silicon element contained in the polysilicon film (22a). Thus, it is possible to form a storage node (22) which has at least a surface made of the noble metal element and has the same three-dimensional configuration as the polysilicon film (22a) obtained before the substitution.
摘要翻译：参考具有由高电介质膜制成的电容器电介质膜的电容器，可以获得能够形成由贵金属制成的精细储存节点的半导体器件的方法。在层间绝缘膜（9）的整个表面上形成多晶硅膜，然后通过使用具有预定开口图案的抗蚀剂作为掩模，进行各向异性干蚀刻。因此，形成与插塞层（11）接触的多晶硅膜（22a）。接着，将贵金属元素代替包含在多晶硅膜（22a）中的硅元素。因此，可以形成至少具有由贵金属元件制成的表面并且具有与替代之前获得的多晶硅膜（22a）相同的三维构造的存储节点（22）。

9. 发明授权

US07834404B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07834404B2
公开(公告)日：2010-11-16
申请号：US12556003
申请日：2009-09-09
申请人： Kazuhito Ichinose , Akie Yutani
发明人： Kazuhito Ichinose , Akie Yutani
IPC分类号： H01L21/20
CPC分类号： H01L21/823443 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/76814 , H01L21/76843 , H01L21/76895 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A method of manufacturing a semiconductor device according to the present invention includes the steps of introducing first impurities of a first conductivity type into a main surface of a semiconductor substrate 1 to form a first impurity region, introducing second impurities of a second conductivity type to form a second impurity region, forming a first nickel silicide film on the first impurity region and forming a second nickel silicide film on the second impurity region, removing an oxide film formed on each of the first and second nickel silicide films by using a mixed gas having an NH3 gas and a gas containing a hydrogen element mixed therein, and forming a first conducting film on the first nickel silicide film and forming a second conducting film on the second nickel silicide film, with the oxide film removed.
摘要翻译：根据本发明的制造半导体器件的方法包括以下步骤：将第一导电类型的第一杂质引入半导体衬底1的主表面以形成第一杂质区，引入第二导电类型的第二杂质形成第二杂质区，在所述第一杂质区上形成第一硅化镍膜，在所述第二杂质区上形成第二硅化镍膜，通过使用混合气体除去形成在所述第一和第二硅化镍膜上的氧化膜， NH 3气体和含有氢元素的气体混合，在第一硅化镍膜上形成第一导电膜，在第二硅化镍膜上形成第二导电膜，除去氧化物膜。

10. 发明授权

US08728853B2 Solid-state image sensing device and method of manufacturing the same 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08728853B2
公开(公告)日：2014-05-20
申请号：US13265513
申请日：2009-04-24
申请人： Akie Yutani , Yasutaka Nishioka
发明人： Akie Yutani , Yasutaka Nishioka
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14643 , H01L27/14689
摘要： By selectively anisotropically etching a stack film formed to cover a plurality of photodiodes and a gate electrode layer of a MOS transistor, the stack film remains on each of the plurality of photodiodes to form a lower antireflection coating and the stack film remains on a sidewall of the gate electrode layer to form a sidewall. Using the gate electrode layer and the sidewall as a mask, an impurity is introduced to form a source/drain region of the MOS transistor. After the impurity was introduced, an upper antireflection coating is formed at least on a lower antireflection coating. At least any of the upper antireflection coating and the lower antireflection coating is etched such that the antireflection coatings on the two respective photodiodes are different in thickness from each other.
摘要翻译：通过选择性地各向异性地蚀刻形成为覆盖多个光电二极管的堆叠膜和MOS晶体管的栅极电极层，堆叠膜保留在多个光电二极管中的每一个上，以形成较低的抗反射涂层，并且堆叠膜保留在栅电极层形成侧壁。使用栅极电极层和侧壁作为掩模，引入杂质以形成MOS晶体管的源极/漏极区域。在引入杂质之后，至少在较低的抗反射涂层上形成上部抗反射涂层。蚀刻上部抗反射涂层和下部抗反射涂层中的至少一个，使得两个相应光电二极管上的抗反射涂层的厚度彼此不同。

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