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    • 4. 发明授权
    • Thin film transistor and matrix display device
    • 薄膜晶体管和矩阵显示装置
    • US06563174B2
    • 2003-05-13
    • US10224879
    • 2002-08-21
    • Masashi KawasakiHideo OhnoKazuki KobayashiIkuo Sakono
    • Masashi KawasakiHideo OhnoKazuki KobayashiIkuo Sakono
    • H01L2701
    • H01L29/7869H01L27/1214H01L27/1225H01L29/4908H01L29/66969H01L29/78603
    • In a thin film transistor, a gate insulating film having a first insulating film and a second insulating film is formed on a gate electrode, and a semiconductor layer including ZnO etc. is formed on the second insulating film. The first insulating film is formed by using SiNx having a high insulating characteristic, and the second insulating film is formed by using an oxide (for example, SiO2). This structure improves a crystalline characteristic of the semiconductor layer that constitutes an interface in combination with the second insulating film, and decreases a defective level of the interface between the semiconductor layer and the second insulating film. Further, the second insulating film is constituted of the oxide, so that it is possible to restrain a material for the second insulating film from depriving oxygen of the semiconductor layer. This keeps a crystalline characteristic of the semiconductor layer under a preferable condition in the vicinity of the interface between the second insulating film and the semiconductor layer. As a result, it is possible to realize a thin film transistor such that: a leak current level at an OFF area is low, and the mobility is high, and a switching characteristic is preferable. Thus, in the thin film transistor having a transparent semiconductor film, a TFT characteristic is improved.
    • 在薄膜晶体管中,在栅电极上形成具有第一绝缘膜和第二绝缘膜的栅极绝缘膜,并且在第二绝缘膜上形成包括ZnO等的半导体层。 第一绝缘膜通过使用具有高绝缘特性的SiNx形成,并且第二绝缘膜通过使用氧化物(例如,SiO 2)形成。 该结构改善了构成与第二绝缘膜结合的界面的半导体层的结晶特性,并降低了半导体层与第二绝缘膜之间的界面的缺陷水平。 此外,第二绝缘膜由氧化物构成,使得可以抑制第二绝缘膜的材料剥夺半导体层的氧。 这在第二绝缘膜和半导体层之间的界面附近的优选条件下保持半导体层的结晶特性。 结果,可以实现薄膜晶体管,使得在OFF区域的漏电流水平低,并且迁移率高,并且切换特性是优选的。 因此,在具有透明半导体膜的薄膜晶体管中,提高了TFT特性。
    • 9. 发明申请
    • CONTROL ROD
    • 控制杆
    • US20120148012A1
    • 2012-06-14
    • US12019103
    • 2008-01-24
    • Takayuki ARAKAWAKoichi MachidaNorio KawashimaKazuki KobayashiYoshiharu Kikuchi
    • Takayuki ARAKAWAKoichi MachidaNorio KawashimaKazuki KobayashiYoshiharu Kikuchi
    • G21C7/06
    • G21C7/113G21C7/10Y02E30/39
    • A control rod includes a tie-rod, a handle mounted to an upper end portion of the tie-rod, either a connector plate or a fall velocity limiter mounted to a lower end portion of the tie-rod, sheaths having a U-shaped cross-section, welded intermittently to the tie-rod at a plurality of locations in the axial direction of the tie-rod, and having an upper end welded to the handle and a lower end welded to either the connector plate or the fall velocity limiter, and a neutron absorbing member disposed inside each of the sheaths. An upper end of a weld portion located at uppermost position in an axial direction of the tie-rod among a plurality of weld portions between the tie-rod and the sheath is disposed at a position within a range between 0.8 and 13% of total axial length Ls of the sheath below an upper end of the sheath.
    • 控制杆包括拉杆,安装到拉杆的上端部分的手柄,安装到拉杆的下端部分的连接板或下落速度限制器,具有U形的护套 横截面,在连杆的轴向方向上的多个位置处间断地焊接到拉杆,并且具有焊接到手柄的上端,以及焊接到连接器板或下落速度限制器的下端 以及设置在每个护套内的中子吸收构件。 位于拉杆和护套之间的多个焊接部分中的位于拉杆的轴向方向上的最上位置处的焊接部分的上端设置在总轴向的0.8和13%之间的范围内的位置 在鞘的上端下方的鞘的长度Ls。
    • 10. 发明授权
    • Ultrasound cleaning device and resist-stripping device
    • 超声波清洗装置和抗剥离装置
    • US06497240B1
    • 2002-12-24
    • US09557052
    • 2000-04-21
    • Kazuki KobayashiToshiaki MurataniHiroto Yoshioka
    • Kazuki KobayashiToshiaki MurataniHiroto Yoshioka
    • B08B310
    • H01L21/67051B08B3/022B08B2203/0288Y10S134/902
    • To provide an ultrasonic cleaning device (1) that ensures stable operation of a vibrating element for generating ultrasonic without a complex structure and distribution of a great quantity of a cleaning liquid and (2) that is capable of cleaning upper and lower surfaces of a cleaning target easily, an ultrasonic cleaning section of the device is provided with an upper cleaning-liquid-supply nozzle and a lower cleaning-liquid-supply nozzle for projection of ultrasonic. The upper cleaning-liquid-supply nozzle supplies an upper surface cleaning liquid to an upper surface of a glass substrate. The lower cleaning-liquid-supply nozzle supplies the lower surface cleaning liquid to a lower surface of the substrate in a form of shower to which ultrasonic has been projected. A vibrating element for generating ultrasonic to be projected to the lower surface cleaning liquid is provided in a cleaning liquid distribution path that extends from an upstream side to a downstream side in a direction in a range of a horizontal direction to an upward direction.
    • 提供一种超声波清洗装置(1),其确保用于产生超声波的振动元件的稳定运行,而没有复杂的结构和大量的清洗液体的分布,以及(2)能够清洁清洁的上下表面的超声波清洗装置 所述装置的超声波清洗部设置有用于超声波投影的上部清洗液供给喷嘴和下部清洗液供给喷嘴。 上清洗液供给喷嘴将上表面清洗液供给到玻璃基板的上表面。 下部清洗液供给喷嘴将下表面清洗液以投射了超声波的喷淋形式向基板的下表面供给。 用于产生超声波的振动元件设置在从水平方向向上方的范围内的上游侧向下游侧延伸的清洗液分配路径中。