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1. 发明授权

US09214489B2 Photodiode and method for producing the same, photodiode array, spectrophotometer and solid-state imaging device 有权
标题翻译：光电二极管及其制造方法，光电二极管阵列，分光光度计和固态成像装置
公开(公告)号：US09214489B2
公开(公告)日：2015-12-15
申请号：US14124129
申请日：2012-06-04
申请人： Shigetoshi Sugawa , Rihito Kuroda
发明人： Shigetoshi Sugawa , Rihito Kuroda
IPC分类号： H01L31/062 , H01L27/146 , H01L31/06 , H01L31/18 , G01J3/28
CPC分类号： G01J3/2803 , G01J3/2823 , G01J2003/2813 , H01L27/1446 , H01L27/14601 , H01L27/14609 , H01L27/14643 , H01L31/02363 , H01L31/06 , H01L31/103 , H01L31/18 , H01L31/1804 , H01L31/1864 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulator layer, and is smaller than a penetration depth of ultraviolet light.
摘要翻译：提供了在其表面上具有高浓度层的光电二极管，其中形成高浓度层，使得非耗尽区的厚度大于硅与绝缘体层之间的界面的粗糙度，并且是小于紫外线的穿透深度。

2. 发明申请

US20140293105A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20140293105A1
公开(公告)日：2014-10-02
申请号：US14302516
申请日：2014-06-12
申请人： Shigetoshi SUGAWA
发明人： Shigetoshi SUGAWA
IPC分类号： H04N5/374
CPC分类号： H04N5/3742 , H04N5/363 , H04N5/37457
摘要： Reset noise in pixels is removed. A solid-state imaging device includes pixels arranged in row and column directions, in which each of the pixels includes a charge-voltage conversion terminal for voltage-converting signal charges transferred from a photoelectric conversion element by a transfer means, and a first reset means for resetting a voltage at the charge-voltage conversion terminal; signal lines, each of which is connected to the pixels in each column; a scanning means for selecting one row among others; and constant current circuit elements for supplying constant current to the signal lines. In the device, within each selected row, each reset voltage at each charge-voltage conversion terminal and a converted voltage from transferred signal charges are read out to and stored in each signal line supplied with constant current by each constant current circuit element, and then output.
摘要翻译：去除重置噪点（以像素为单位）。固态成像装置包括以行和列方向布置的像素，其中每个像素包括用于通过转印装置对从光电转换元件传送的信号电荷进行电压转换的电荷电压转换端，以及第一复位装置用于复位所述充电电压转换端子处的电压; 信号线，每条信号线连接到每列中的像素; 用于选择一行等的扫描装置; 以及用于向信号线提供恒定电流的恒流电路元件。在该设备中，在每个选定的行内，每个充电电压转换端子处的每个复位电压和来自传送的信号电荷的转换电压被每个恒流电路元件读出并存储在由恒定电流提供的每条信号线中，然后输出。

3. 发明授权

US08395193B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08395193B2
公开(公告)日：2013-03-12
申请号：US13364601
申请日：2012-02-02
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.
摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

4. 发明授权

US08183670B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08183670B2
公开(公告)日：2012-05-22
申请号：US11651034
申请日：2007-01-09
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto , Hiroshi Akahori , Keiichi Nii
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto , Hiroshi Akahori , Keiichi Nii
IPC分类号： H01L29/04
CPC分类号： H01L21/3185 , H01L21/30604 , H01L21/31654 , H01L21/318 , H01L29/6659
摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.
摘要翻译：在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造高迁移率的n-MOS晶体管。通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面，或通过氢或重氢强烈地终止硅表面。自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。

5. 发明授权

US08120682B2 Solid-state image pickup device and method of resetting the same 有权
标题翻译：固态摄像装置及其复位方法
公开(公告)号：US08120682B2
公开(公告)日：2012-02-21
申请号：US12539782
申请日：2009-08-12
申请人： Toru Koizumi , Shigetoshi Sugawa , Tetsunobu Kochi
发明人： Toru Koizumi , Shigetoshi Sugawa , Tetsunobu Kochi
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3597 , H04N5/238 , H04N5/353
摘要： A solid-state image pickup device comprises for each pixel a photoelectric converter PD, an input terminal FD of a signal amplifier and a transfer switch TX for transferring an optical signal from the photoelectric converter to the input terminal. The device additionally comprises means for resetting the photoelectric converter by opening the transfer switch TX under a condition of holding the voltage of the input terminal FD to a fixed high level before storing the optical signal in the photoelectric converter PD. With this arrangement, any residual electric charge in the photoelectric converter can be eliminated without paying the cost of reducing the manufacturing yield and degrading the chip performance.
摘要翻译：固态图像拾取装置包括每个像素光电转换器PD，信号放大器的输入端子FD和用于将光信号从光电转换器传送到输入端子的转移开关TX。该装置还包括用于在将光信号存储在光电转换器PD中之前将输入端子FD的电压保持在固定高电平的状态下打开转换开关TX来复位光电转换器的装置。通过这种布置，可以消除光电转换器中的任何剩余电荷，而不需要降低制造成品率和降低芯片性能的成本。

6. 发明授权

US08093918B2 Electronic device identifying method and electronic device comprising identification means 失效
标题翻译：电子设备识别方法和包括识别装置的电子设备
公开(公告)号：US08093918B2
公开(公告)日：2012-01-10
申请号：US12859100
申请日：2010-08-18
申请人： Toshiyuki Okayasu , Shigetoshi Sugawa , Akinobu Teramoto
发明人： Toshiyuki Okayasu , Shigetoshi Sugawa , Akinobu Teramoto
IPC分类号： G01R31/36
CPC分类号： H01L23/544 , G01R31/31718 , G11C2029/4402 , H01L21/76254 , H01L22/14 , H01L2223/5444 , H01L2924/0002 , Y10T29/49004 , H01L2924/00
摘要： An electronic device that includes an actual operation circuit that operates during an actual operation of the electronic device, a second test circuit and a third test circuit that operate during a test of the electronic device, and a power supply section. The power supply section, during the actual operation of the electronic device, does not apply a power supply voltage to the second test circuit and applies power supply voltages to the actual operation circuit and the third test circuit. The power supply section, to obtain identification of the electronic device, applies a power supply voltage to the second test circuit.
摘要翻译：一种电子设备，包括在电子设备的实际操作期间操作的实际操作电路，在电子设备的测试期间操作的第二测试电路和第三测试电路以及电源部分。在电子设备的实际操作期间，电源部分不向第二测试电路施加电源电压，并且向实际操作电路和第三测试电路施加电源电压。为了获得电子设备的识别，电源部分向第二测试电路施加电源电压。

7. 发明授权

US07848828B2 Method and apparatus for managing manufacturing equipment, method for manufacturing device thereby 失效
标题翻译：用于管理制造设备的方法和装置，由此制造装置的方法
公开(公告)号：US07848828B2
公开(公告)日：2010-12-07
申请号：US12055310
申请日：2008-03-25
申请人： Toshiyuki Okayasu , Shigetoshi Sugawa , Akinobu Teramoto
发明人： Toshiyuki Okayasu , Shigetoshi Sugawa , Akinobu Teramoto
IPC分类号： G05B11/01 , G06F19/00 , G01B5/28 , H01L23/58
CPC分类号： G05B19/4184 , G05B2219/31483 , G05B2219/45031 , H01L22/20 , H01L22/34 , H01L2924/0002 , Y02P90/14 , Y02P90/22 , H01L2924/00
摘要： Provided is a method for managing manufacturing apparatuses used in a managed production line including a plurality of manufacturing processes for manufacturing an electronic device, each of the apparatuses being used in one or more of the processes. The method includes acquiring a property of a reference device manufactured in a predetermined reference production line including the manufacturing processes to be performed, performing at least one of the manufacturing processes in the managed production line, performing the other manufacturing processes in the reference production line, and manufacturing a comparison device. The method further includes measuring a property of the comparison device, comparing the measured properties of the reference and the comparison devices, and judging whether a manufacturing apparatus used in the at least one manufacturing process in the managed production line is defective or not, based on a property difference between the reference and the comparison devices.
摘要翻译：提供一种用于管理包括用于制造电子设备的多个制造过程的管理生产线中的制造设备的方法，每个设备在一个或多个处理中使用。该方法包括获取在预定参考生产线中制造的参考装置的特性，包括要执行的制造过程，执行管理生产线中的至少一个制造过程，在参考生产线中执行其他制造过程，并制造比较装置。该方法还包括测量比较装置的性质，比较参考和比较装置的测量属性，以及基于管理生产线中的至少一个制造过程中使用的制造装置是否有缺陷，基于参考和比较设备之间的属性差异。

8. 发明授权

US07821560B2 Optical sensor, solid-state imaging device, and operating method of solid-state imaging device 有权
标题翻译：光学传感器，固态成像装置和固态成像装置的操作方法
公开(公告)号：US07821560B2
公开(公告)日：2010-10-26
申请号：US11887916
申请日：2006-04-06
申请人： Shigetoshi Sugawa , Nana Akahane
发明人： Shigetoshi Sugawa , Nana Akahane
IPC分类号： H04N5/335 , H04N3/14
CPC分类号： H04N5/35572 , H01L27/14603 , H01L27/14609 , H01L27/14656 , H04N5/3559 , H04N5/374 , H04N5/37452
摘要： In an optical device such as an optical sensor or a solid-state imaging device having a photodiode for receiving light and producing photocharges and a transfer transistor (or an overflow gate) for transferring the photocharge, it is configured that photocharges overflowing from the photo diode in storage operation are stored into a plurality of storage capacitance elements through the transfer transistor or the overflow gate, thereby obtaining the optical device adapted to maintain a high sensitivity and a high S/N ratio and having a wide dynamic range.
摘要翻译：在诸如光学传感器或具有用于接收光并产生光电荷的光电二极管的固态成像装置的光学装置和用于传送光电荷的转移晶体管（或溢流栅极）中，从光电二极管在存储操作中通过传输晶体管或溢出门将多个存储电容元件存储，从而获得适于保持高灵敏度和高S / N比并具有宽动态范围的光学装置。

9. 发明授权

US07800673B2 Solid-state imaging device, optical sensor and method of operating solid-state imaging device 有权
标题翻译：固态成像装置，光学传感器和操作固态成像装置的方法
公开(公告)号：US07800673B2
公开(公告)日：2010-09-21
申请号：US10592590
申请日：2005-04-12
申请人： Shigetoshi Sugawa , Satoru Adachi , Kyoichi Yahata , Tatsuya Terada
发明人： Shigetoshi Sugawa , Satoru Adachi , Kyoichi Yahata , Tatsuya Terada
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3559 , H01L27/14609 , H04N5/2355 , H04N5/3591
摘要： A solid-state imaging device and an optical sensor, which can enhance a wide dynamic range while keeping a high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping a high sensitivity with a high S/N ratio are disclosed. An array of integrated pixels has a structure wherein each pixel comprises a photodiode PD for receiving light and generating and accumulating photoelectric charges and a storage capacitor element CS coupled to the photodiode PD through a transfer transistor Tr1 for accumulating the photoelectric charges overflowing from the photodiode PD. The storage capacitor element CS is structured to accumulate the photoelectric charges overflowing from the photodiode PD in a storage-capacitor-element accumulation period TCS that is set to be a period at a predetermined ratio with respect to an accumulation period of the photodiode PD.
摘要翻译：一种固态成像装置和光学传感器，其可以在保持高S / N比的高灵敏度的同时增强宽动态范围，以及操作固态成像装置以增强宽动态范围同时保持公开了具有高S / N比的高灵敏度。集成像素阵列具有这样的结构，其中每个像素包括用于接收光并且产生和累积光电电荷的光电二极管PD和通过传输晶体管Tr1耦合到光电二极管PD的存储电容器元件CS，用于累积从光电二极管PD溢出的光电电荷。存储电容器元件CS被构造为在相对于光电二极管PD的累积周期被设置为以预定比率的周期的存储电容元件累积周期TCS中累积从光电二极管PD溢出的光电电荷。

10. 发明申请

US20100188538A1 SOLID-STATE IMAGE SENSOR AND DRIVE METHOD FOR THE SAME 有权
标题翻译：固态图像传感器及其驱动方法
公开(公告)号：US20100188538A1
公开(公告)日：2010-07-29
申请号：US12676505
申请日：2008-09-04
申请人： Shigetoshi Sugawa , Yasushi Kondo , Hideki Tominaga
发明人： Shigetoshi Sugawa , Yasushi Kondo , Hideki Tominaga
IPC分类号： H04N5/335
CPC分类号： H04N5/35572 , H04N5/3559 , H04N5/3575 , H04N5/3742 , H04N5/37452 , H04N5/378
摘要： An independent pixel output line (14) is provided for each of two-dimensionally arranged pixels (10) within a pixel area (2a). A plurality of memory sections are connected to each pixel output line (14). In a continuous reading mode, photocharge storage is simultaneously performed at all the pixels, and signals are collectively transferred from the pixels (10) through the pixel output lines (14) to the memory sections, after which the signals held in the memory sections are sequentially read and outputted. In a burst reading mode, the operations of simultaneously storing photocharges at all the pixels and collectively transferring signals from each pixel (10) through the pixel output line (14) to the memory sections are sequentially performed for each of the memory sections to hold signals corresponding to a plurality of frames. When a imaging halt command is given, the holding of new signals is halted, and a plurality of frames of image signals held in the memory sections at that point in time are sequentially read and outputted. Thus, both an ultrahigh-speed imaging operation with a limitation on the number of frames and an imaging mode that is rather slow but has no limitation on the number of frames can be performed.
摘要翻译：为像素区域（2a）内的二维排列的像素（10）中的每一个提供独立的像素输出线（14）。多个存储器部分连接到每个像素输出线（14）。在连续读取模式下，在所有像素处同时执行光电荷存储，并且将信号从像素（10）通过像素输出线（14）共同转移到存储器部分，之后保存在存储器部分中的信号为依次读取并输出。在突发读取模式下，对于每个存储器部分，顺序地执行将所有像素同时存储光电荷并将每个像素（10）的信号通过像素输出线（14）共同传送到存储器部分的操作，以保持信号对应于多个帧。当给出成像暂停命令时，停止新信号的保持，并且顺序读取并输出在该时间点保持在存储器部分中的多个图像信号帧。因此，可以执行具有对帧数量的限制的超高速成像操作和相当慢但对帧数量没有限制的成像模式。

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