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1. 发明申请

US20110247560A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20110247560A1
公开(公告)日：2011-10-13
申请号：US13130078
申请日：2009-11-19
申请人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
发明人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
IPC分类号： C23C16/448 , C23C16/458 , C23C16/455
CPC分类号： C23C16/44 , C23C16/407 , C23C16/45523 , H01L21/02181 , H01L21/02238 , H01L21/0228 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/31138 , H01L21/3141 , H01L21/31645 , H01L21/31662 , H01L21/321
摘要： A disclosed substrate processing apparatus comprises a reaction chamber; a substrate supporting portion that is provided in the reaction chamber and configured to support a substrate; and plural catalyst reaction portions that are arranged in the reaction chamber in order to oppose the substrate supporting portion, and configured to produce a reaction gas by allowing a source gas introduced from a gas introduction portion to contact a catalyst and to eject the reaction gas to an inner space of the reaction chamber, thereby processing the substrate supported by the substrate supporting portion with the ejected reaction gas.
摘要翻译：所公开的基板处理装置包括反应室; 基板支撑部，其设置在所述反应室中并且构造成支撑基板; 以及多个催化剂反应部分，其布置在反应室中以与基板支撑部分相对，并且被配置为通过使从气体引入部分引入的源气体接触催化剂并将反应气体喷射到反应室的内部空间，从而用喷射的反应气体处理由基板支撑部分支撑的基板。

2. 发明授权

US08574676B2 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US08574676B2
公开(公告)日：2013-11-05
申请号：US13130066
申请日：2009-11-19
申请人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
发明人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
IPC分类号： C23C16/40
CPC分类号： C23C16/45523 , C23C16/407 , C23C16/44 , H01L21/02181 , H01L21/02233 , H01L21/0228 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/31138 , H01L21/3141 , H01L21/31645 , H01L21/31662 , H01L21/321
摘要： A substrate processing method includes steps of: arranging a substrate in a chamber; introducing H2 gas at a first flow rate and O2 gas at a second flow rate independently from the H2 gas into a catalyst reaction portion in which catalyst is accommodated, wherein H2O gas produced from the H2 gas and the O2 gas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the O2 gas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the H2 gas and the O2 gas and reducing the flow rate of the O2 gas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.
摘要翻译：基板处理方法包括以下步骤：将基板布置在室中; 将第一流量的H 2气体和独立于H 2气体的第二流量的O 2气体引入到其中容纳催化剂的催化剂反应部分，其中喷出由H 2气体产生的H 2 O气体和与催化剂接触的O 2气体从催化剂反应部分向基板; 并且将引入到催化剂反应部的O 2气体的流量减少到低于第二流量的第三流量，其中引入H 2气体和O 2气体并降低O 2气体的流量的步骤以预定的重复频率以该顺序重复，从而处理基板。

3. 发明授权

US5177514A Apparatus for coating a photo-resist film and/or developing it after being exposed 失效
标题翻译：用于涂布光致抗蚀剂膜和/或曝光后显影的设备
公开(公告)号：US5177514A
公开(公告)日：1993-01-05
申请号：US627357
申请日：1990-12-14
申请人： Mitsuru Ushijima , Masami Akimoto
发明人： Mitsuru Ushijima , Masami Akimoto
IPC分类号： B29C31/00 , G03F7/16 , G03F7/20 , G03F7/30
CPC分类号： G03F7/7075 , B29C31/00 , G03F7/16 , G03F7/3021 , Y10S134/902 , Y10S414/137
摘要： The resist-processing system according to the present invention includes at least one processing sections having a plurality of treatment units for performing various kinds of treatments on a semiconductor wafer such as the coating process and baking process, a loading section connected to the processing section for supplying the wafer to the processing section, a vacuum tweezer for carrying the wafer in the loading section so as to transfer the wafer from the loading section to the processing section, a handling robot for receiving the wafer from said loading section and transferring it in the processing section so as to load and unload the wafer to/from each of the treatment units, control means for controlling the operations of the vacuum tweezer and the handling robot in accordance with a predetermined program, and a passage provided in the processing section in such a manner the passage is disposed along with said plurality of treating units. Further, the handling robot travels through the passage in accordance with the predetermined program from the control means so as to stop by each of the treatment units in the order of the treatments required by the wafer.
摘要翻译：根据本发明的抗蚀剂处理系统包括至少一个处理部分，其具有用于在半导体晶片上进行各种处理的多个处理单元，例如涂布处理和烘焙处理，连接到处理部分的加载部分，用于将晶片供应到处理部分;真空镊子，用于将晶片承载在装载部分中，以将晶片从装载部分传送到处理部分;处理机器人，用于从所述装载部分接收晶片并将其转移到处理部分，以便从每个处理单元加载和卸载晶片;控制装置，用于根据预定程序控制真空镊子和处理机器人的操作，以及设置在处理部分中的通道通道与所述多个处理单元一起设置的方式。此外，处理机器人根据来自控制装置的预定程序行进通过通道，以便按照晶片所需的处理顺序由每个处理单元停止。

4. 发明授权

US5393624A Method and apparatus for manufacturing a semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US5393624A
公开(公告)日：1995-02-28
申请号：US921598
申请日：1992-08-03
申请人： Mitsuru Ushijima
发明人： Mitsuru Ushijima
IPC分类号： G01B11/06 , G03F7/16 , G03F7/20 , G03C5/00 , G01B11/02 , G01N21/00 , H01L21/306
CPC分类号： G03F7/70483 , G01B11/0683 , G03F7/162
摘要： A method of manufacturing a semiconductor device of this invention relates to a method of manufacturing a semiconductor device with ultra-micropattern electrodes. Light is projected on a resist film, and reflected light from a region on which no semiconductor chip is formed, i.e., a flat region is detected to measure the thickness of the resist film. Based on the measured thickness, at least one of the resist film forming step, the exposing step, and the developing step is controlled, so that the electrodes have a desired width.
摘要翻译：本发明的制造半导体器件的方法涉及一种制造具有超微图案电极的半导体器件的方法。光被投影在抗蚀剂膜上，并且来自未形成半导体芯片的区域的反射光，即，检测到平坦区域以测量抗蚀剂膜的厚度。基于测量的厚度，控制抗蚀剂膜形成步骤，曝光步骤和显影步骤中的至少一个，使得电极具有期望的宽度。

5. 发明授权

US07569124B2 Anodic oxidation apparatus 失效
标题翻译：阳极氧化装置
公开(公告)号：US07569124B2
公开(公告)日：2009-08-04
申请号：US10924830
申请日：2004-08-25
申请人： Yasushi Yagi , Mitsuru Ushijima , Yoshifumi Watabe , Takuya Komoda , Koichi Aizawa
发明人： Yasushi Yagi , Mitsuru Ushijima , Yoshifumi Watabe , Takuya Komoda , Koichi Aizawa
IPC分类号： C25D17/00 , C25D11/02
CPC分类号： C25D11/02 , C25D11/005 , C25D11/32 , C25F3/12 , C25F3/14 , C25F7/00 , H01L21/02203 , H01L21/02238 , H01L21/02258 , H01L21/3167 , H01L21/31675 , Y10S204/07
摘要： In an anodic oxidation apparatus and an anodic oxidation method and a panel for a display device manufactured by them, a large target substrate is treated by a smaller component. The anodic oxidation apparatus includes a lamp which emits light; a treatment bath which has a stage capable of mounting a target substrate thereon with a treatment part thereof directed upward and is provided at a position where the emitted light reaches and a frame located on the stage; a cathode electrode which is provided on the way of the emitted light to reach the mounted target substrate and includes an opening to allow the light to pass therethrough; a seal member which establishes a liquid sealing property between the frame and the mounted target substrate; a conductive contact member which is provided to be contactable with a plurality of electrode patterns formed on the target substrate outside an annular shape of the seal member and moves along side of the target substrate; and a current source which is electrically connected to the contact member and sets an output current value in accordance with the number of electrode patterns of the mounted target substrate in contact as the contact member moves.
摘要翻译：在阳极氧化装置和阳极氧化法以及由它们制造的显示装置的面板中，通过较小的成分处理大的靶基板。阳极氧化装置包括发光的灯; 处理槽，其具有能够在其上安装目标基板的台阶，其处理部分向上指向并设置在发射光到达的位置和位于台上的框架; 阴极，其设置在所发射的光的路上，以到达所安装的目标基板，并且包括允许光通过的开口; 密封构件，其在所述框架和所安装的目标基板之间建立液体密封性; 导电接触构件，其设置成可与形成在所述目标基板上的多个电极图案接触，所述多个电极图案位于所述密封构件的环形形状的外侧，并且沿着所述目标基板的侧面移动; 以及电流源，其电连接到所述接触构件，并且当所述接触构件移动时，根据所接触的安装的目标衬底的电极图案的数量设定输出电流值。

6. 发明授权

US5442416A Resist processing method 失效
标题翻译：抗蚀加工方法
公开(公告)号：US5442416A
公开(公告)日：1995-08-15
申请号：US271675
申请日：1994-07-07
申请人： Kiyohisa Tateyama , Masami Akimoto , Mitsuru Ushijima
发明人： Kiyohisa Tateyama , Masami Akimoto , Mitsuru Ushijima
IPC分类号： B29C31/00 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/30 , H01L21/00 , H01L21/677 , G03D5/00
CPC分类号： G03F7/7075 , B29C31/00 , G03F7/16 , G03F7/26 , G03F7/3021 , H01L21/67173 , H01L21/67178 , H01L21/67742 , Y10S134/902 , Y10S414/136
摘要： A resist process system of the present invention includes at least two robots for conveying a wafer, a passage through which the robots can move, plural process units arranged along the passage, and a waiting unit for temporarily holding the wafer which is to be processed. The waiting unit is arranged beside the passage and between the process units and it includes plural compartments partitioned in it.
摘要翻译：本发明的抗蚀剂处理系统包括至少两个用于输送晶片的机器人，机器人可以移动的通道，沿着通道布置的多个处理单元和用于临时保持待处理的晶片的等待单元。等待单元布置在通道旁边和处理单元之间，并且其包括分隔在其中的多个隔室。

7. 发明申请

US20050077183A1 Anodic oxidation apparatus, anodic oxidation method, and panel for display device 失效
标题翻译：阳极氧化装置，阳极氧化法，显示装置用面板
公开(公告)号：US20050077183A1
公开(公告)日：2005-04-14
申请号：US10924830
申请日：2004-08-25
申请人： Yasushi Yagi , Mitsuru Ushijima , Yoshifumi Watabe , Takuya Komoda , Koichi Aizawa
发明人： Yasushi Yagi , Mitsuru Ushijima , Yoshifumi Watabe , Takuya Komoda , Koichi Aizawa
IPC分类号： H01L21/3063 , C25D5/00 , C25D11/02 , C25D11/32 , C25D17/00 , C25F3/12 , C25F3/14 , C25F7/00 , H01J31/15 , H01L21/02 , H01L21/316
CPC分类号： C25D11/02 , C25D11/005 , C25D11/32 , C25F3/12 , C25F3/14 , C25F7/00 , H01L21/02203 , H01L21/02238 , H01L21/02258 , H01L21/3167 , H01L21/31675 , Y10S204/07
摘要： In an anodic oxidation apparatus and an anodic oxidation method and a panel for a display device manufactured by them, a large target substrate is treated by a smaller component. The anodic oxidation apparatus includes a lamp which emits light; a treatment bath which has a stage capable of mounting a target substrate thereon with a treatment part thereof directed upward and is provided at a position where the emitted light reaches and a frame located on the stage; a cathode electrode which is provided on the way of the emitted light to reach the mounted target substrate and includes an opening to allow the light to pass therethrough; a seal member which establishes a liquid sealing property between the frame and the mounted target substrate; a conductive contact member which is provided to be contactable with a plurality of electrode patterns formed on the target substrate outside an annular shape of the seal member and moves along side of the target substrate; and a current source which is electrically connected to the contact member and sets an output current value in accordance with the number of electrode patterns of the mounted target substrate in contact as the contact member moves.
摘要翻译：在阳极氧化装置和阳极氧化法以及由它们制造的显示装置的面板中，通过较小的成分处理大的靶基板。阳极氧化装置包括发光的灯; 处理槽，其具有能够在其上安装目标基板的阶段，其处理部分向上指向并设置在所发射的光到达的位置和位于台上的框架; 阴极，其设置在所发射的光的路上，以到达所安装的目标基板，并且包括允许光通过的开口; 密封构件，其在所述框架和所安装的目标基板之间建立液体密封性; 导电接触构件，其设置成可与形成在所述目标基板上的多个电极图案接触，所述多个电极图案位于所述密封构件的环形形状的外侧，并且沿着所述目标基板的侧面移动; 以及电流源，其电连接到所述接触构件，并且当所述接触构件移动时，根据所接触的安装的目标衬底的电极图案的数量设定输出电流值。

8. 发明授权

US06378078B1 Semiconductor integrated circuit supervising an illicit address operation 失效
标题翻译：半导体集成电路监督非法地址操作
公开(公告)号：US06378078B1
公开(公告)日：2002-04-23
申请号：US09271364
申请日：1999-03-18
申请人： Mitsuru Ushijima
发明人： Mitsuru Ushijima
IPC分类号： G06F1100
CPC分类号： G06F12/1416 , G06F12/1433
摘要： A supervisory circuit for a semiconductor integrated circuit includes a first circuit, a second circuit, inverters, and an EXOR circuit. The first circuit outputs an address signal. The second circuit receives via an address bus the address signal transferred from the first circuit. The inverters hold at least an address signal preceding one transfer period as a past address signal on the address bus. The EXOR circuit compares the past address signal held by the inverters with a current address signal on the address bus, and when the comparison result represents that the past and current address signals are identical, outputs an illicit operation detection signal.
摘要翻译：半导体集成电路的监控电路包括第一电路，第二电路，反相器和EXOR电路。第一个电路输出地址信号。第二电路经由地址总线接收从第一电路传送的地址信号。逆变器至少将一个传输周期之前的地址信号保持为地址总线上的过去地址信号。 EXOR电路将由逆变器保持的过去地址信号与地址总线上的当前地址信号进行比较，当比较结果表示过去和当前地址信号相同时，输出非法操作检测信号。

9. 发明授权

US5202716A Resist process system 失效
标题翻译：抵抗过程系统
公开(公告)号：US5202716A
公开(公告)日：1993-04-13
申请号：US904505
申请日：1992-06-25
申请人： Kiyohisa Tateyama , Masami Akimoto , Mitsuru Ushijima
发明人： Kiyohisa Tateyama , Masami Akimoto , Mitsuru Ushijima
IPC分类号： B29C31/00 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/30 , H01L21/00 , H01L21/677
CPC分类号： H01L21/67173 , B29C31/00 , G03F7/16 , G03F7/26 , G03F7/3021 , G03F7/7075 , H01L21/67178 , H01L21/67742
摘要： A resist process system of the present invention includes at least two robots for conveying a wafer, a passage through which the robots can move, plural process units arranged along the passage, and a waiting unit for temporarily holding the wafer which is to be processed. The waiting unit is arranged beside the passage and between the process units and it includes plural compartments partitioned in it.
摘要翻译：本发明的抗蚀剂处理系统包括至少两个用于输送晶片的机器人，机器人可以移动的通道，沿着通道布置的多个处理单元和用于临时保持待处理的晶片的等待单元。等待单元布置在通道旁边和处理单元之间，并且其包括分隔在其中的多个隔室。

10. 发明授权

US5002008A Coating apparatus and method for applying a liquid to a semiconductor wafer, including selecting a nozzle in a stand-by state 失效
标题翻译：将液体施加到半导体晶片的涂布装置和方法，包括在待机状态下选择喷嘴
公开(公告)号：US5002008A
公开(公告)日：1991-03-26
申请号：US357279
申请日：1989-05-26
申请人： Mitsuru Ushijima , Osamu Hirakawa , Masami Akimoto , Yoshio Kimura , Noriyuki Anai
发明人： Mitsuru Ushijima , Osamu Hirakawa , Masami Akimoto , Yoshio Kimura , Noriyuki Anai
IPC分类号： B05B15/02 , B05C11/08 , G03F7/16
CPC分类号： B05B15/025 , B05C11/08 , G03F7/162
摘要： Disclosed is a coating apparatus for applying a resist or developing solution to a semiconductor wafer. This coating apparatus comprises a plurality of nozzles supplied with various resist from a resist source and each adapted to drip the different solution onto the wafer, a vessel in which the nozzles is kept on stand-by, while maintaining the liquids in a predetermined state in the vicinity of discharge port portions of the nozzles, when the nozzles need not be operated, and a nozzle operating mechanism for selecting one of the nozzles kept on stand-by in the vessel, and transporting the selected nozzle to the location of the wafer, whereby the resist is applied to the wafer by means of only the nozzle transported by the nozzle operating mechanism.
摘要翻译：公开了一种将抗蚀剂或显影液施加到半导体晶片的涂布装置。该涂布装置包括从抗蚀剂源供给各种抗蚀剂的多个喷嘴，每个喷嘴适于将不同的溶液滴到晶片上，其中喷嘴保持待机的容器，同时将液体保持在预定状态喷嘴的排出口部分附近，当喷嘴不需要操作时，以及喷嘴操作机构，用于选择在容器中保持待机的喷嘴之一，并将所选择的喷嘴输送到晶片的位置，由此通过仅由喷嘴操作机构传送的喷嘴将抗蚀剂施加到晶片。

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