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1. 发明申请

US20110247560A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20110247560A1
公开(公告)日：2011-10-13
申请号：US13130078
申请日：2009-11-19
申请人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
发明人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
IPC分类号： C23C16/448 , C23C16/458 , C23C16/455
CPC分类号： C23C16/44 , C23C16/407 , C23C16/45523 , H01L21/02181 , H01L21/02238 , H01L21/0228 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/31138 , H01L21/3141 , H01L21/31645 , H01L21/31662 , H01L21/321
摘要： A disclosed substrate processing apparatus comprises a reaction chamber; a substrate supporting portion that is provided in the reaction chamber and configured to support a substrate; and plural catalyst reaction portions that are arranged in the reaction chamber in order to oppose the substrate supporting portion, and configured to produce a reaction gas by allowing a source gas introduced from a gas introduction portion to contact a catalyst and to eject the reaction gas to an inner space of the reaction chamber, thereby processing the substrate supported by the substrate supporting portion with the ejected reaction gas.
摘要翻译：所公开的基板处理装置包括反应室; 基板支撑部，其设置在所述反应室中并且构造成支撑基板; 以及多个催化剂反应部分，其布置在反应室中以与基板支撑部分相对，并且被配置为通过使从气体引入部分引入的源气体接触催化剂并将反应气体喷射到反应室的内部空间，从而用喷射的反应气体处理由基板支撑部分支撑的基板。

2. 发明授权

US07624772B2 Load lock apparatus, processing system and substrate processing method 失效
标题翻译：加载锁定装置，处理系统和基板处理方法
公开(公告)号：US07624772B2
公开(公告)日：2009-12-01
申请号：US11404086
申请日：2006-04-14
申请人： Katsuhiko Iwabuchi
发明人： Katsuhiko Iwabuchi
IPC分类号： B65B1/20
CPC分类号： H01L21/67248 , C23C16/4586 , C23C16/46 , C23C16/54 , H01L21/67109 , H01L21/67201
摘要： A load lock apparatus including a carry port provided on a side of a carry-in/out section for carrying a substrate in/out from/to the outside, and a carry port provided on a side of a processing section for processing the substrate, includes: a temperature controlling plate for controlling a temperature of the substrate, the temperature controlling plate configured including a plate body made of a porous material and a temperature controlling gas supply path for supplying a temperature controlling gas controlled in temperature to the plate body. The temperature controlling gas passes through the plate body, blows out from a surface of the plate body, and is supplied to the substrate.
摘要翻译：一种装载锁定装置，包括设置在用于将外部输入/输出的基板的进/出部分的一侧的搬运口和设置在处理部的处理基板的一侧的搬运口，包括：用于控制基板的温度的温度控制板，所述温度控制板包括由多孔材料制成的板体和温度控制气体供给路径，所述温度控制气体供给路径用于向所述板体供给控制温度的温度控制气体。温度控制气体通过板体，从板体的表面吹出，并供给到基板。

3. 发明申请

US20060164786A1 Electrostatic chuck for substrate stage, electrode used for the chuck, and treating system having the chuck and electrode 失效
标题翻译：用于基板台的静电卡盘，用于卡盘的电极以及具有卡盘和电极的处理系统
公开(公告)号：US20060164786A1
公开(公告)日：2006-07-27
申请号：US10563302
申请日：2004-06-25
申请人： Toshiki Kobayashi , Katsuhiko Iwabuchi
发明人： Toshiki Kobayashi , Katsuhiko Iwabuchi
IPC分类号： H01T23/00
CPC分类号： H02N13/00 , H01L21/6831
摘要： An electrostatic chuck is provided for a substrate stage that can be used in plasma treatment of various substrates such as a large-sized glass substrate for a flat panel display (FPD), a semiconductor wafer or the like. The electrostatic chuck is divided into a plurality of electrodes formed into nearly bar-like shapes. In accordance with an exemplary embodiment, each of the divided bar-like electrodes includes an inner electrode and a single layer thermally sprayed film formed on the surface of the inner electrode, with the bar-like electrodes disposed in parallel so as to form a plane electrode.
摘要翻译：为可用于诸如用于平板显示器（FPD），半导体晶片等的大尺寸玻璃基板的各种基板的等离子体处理中的基板台设置有静电卡盘。静电卡盘被分成形成为几乎棒状的多个电极。根据示例性实施例，每个分开的棒状电极包括形成在内部电极的表面上的内部电极和单层热喷涂膜，棒状电极平行设置以形成平面电极。

4. 发明授权

US6022418A Vacuum processing method 失效
标题翻译：真空加工方法
公开(公告)号：US6022418A
公开(公告)日：2000-02-08
申请号：US017226
申请日：1998-02-02
申请人： Katsuhiko Iwabuchi
发明人： Katsuhiko Iwabuchi
IPC分类号： C23C16/50 , C23C16/40 , C23C16/458 , C23C16/511 , H01L21/00 , H01L21/31 , H01L21/683 , B05C13/00
CPC分类号： H01L21/67103 , C23C16/401 , C23C16/458 , C23C16/511 , Y10T279/23
摘要： In a vacuum processing apparatus for a semiconductor wafer, a first dielectric plate 4 is provided over an O-ring 32 on an upper surface of a main mounting stand unit 31, in which is embedded a coolant passageway 34, the upper surface thereof is configured as an electrostatic chuck, and a second dielectric plate 5 in which is embedded a heater 53 is provided thereon. Recesses and projections are machined into the surface of the first dielectric plate 4 so that crevices are formed between the resultant indentations 41 and the second dielectric plate 5. During the formation of an SiOF film, the heat from the heater 53 is not conducted through these crevices in a vacuum environment, so that the thermal conductivity between the second dielectric plate 5 and the first dielectric plate 4 is reduced and thus the temperature gradient therebetween is increased. Since the rear surface side of the first dielectric plate 4 is at no more than 200.degree. C., the O-ring is not subjected to a high temperature. This configuration suppresses deterioration of the O-ring, even during high-temperature processing, and also prevents breakdown of the insulating properties of an insulating film formed on a semiconductor wafer.
摘要翻译：在半导体晶片用真空处理装置中，第一电介质板4设置在主安装台单元31的上表面上的O形环32上，嵌入冷却剂通路34，其上表面被配置作为静电卡盘，在其上设置嵌入有加热器53的第二电介质板5。凹槽和突起被加工到第一电介质板4的表面中，使得在所得到的凹口41和第二电介质板5之间形成缝隙。在形成SiOF膜期间，来自加热器53的热量不通过这些在真空环境中产生裂缝，使得第二电介质板5和第一电介质板4之间的导热性降低，因此其间的温度梯度增加。由于第一电介质板4的后表面侧不超过200℃，所以O形环不受高温的影响。即使在高温处理中也能够抑制O型圈的劣化，并且能够防止形成在半导体晶片上的绝缘膜的绝缘性的破坏。

5. 发明授权

US5407350A Heat-treatment apparatus 失效
标题翻译：热处理设备
公开(公告)号：US5407350A
公开(公告)日：1995-04-18
申请号：US17378
申请日：1993-02-12
申请人： Katsuhiko Iwabuchi , Takeo Suzuki , Takashi Tozawa , Satoshi Kagatsume , Hirotsugu Shiraiwa
发明人： Katsuhiko Iwabuchi , Takeo Suzuki , Takashi Tozawa , Satoshi Kagatsume , Hirotsugu Shiraiwa
IPC分类号： C23C16/54 , C30B33/00 , C30B35/00 , F27D3/12
CPC分类号： C30B33/00 , C23C16/54 , C30B35/005
摘要： A heat-treatment apparatus comprises a heat-treatment section for subjecting a heat-treatment to a wafer and a loading section for loading a wafer boat into and unloading it from the heat-treatment section. The loading section is connected to the heat-treatment section and includes in it a movable support member, a drive mechanism and a vertical base board as well as a load-lock chamber for maintaining the inside in vacuum. The movable support member supports a wafer boat. The movable support member is attached to a vertical base board so that it can move up and down. The drive mechanism is attached on the major surface of the vertical base board opposite to the surface facing the wafer boat. The drive mechanism drives the movable support to move up and down. The heat-treatment apparatus further comprises a wafer transfer section that includes an orientation flat alignment mechanism and a buffer stage disposed near the orientation flat alignment mechanism. The wafer transfer section includes a wafer cassette means, a buffer stage and a wafer transfer robot for transferring wafers between the orientation flat alignment mechanism and the wafer boat.
摘要翻译：一种热处理装置包括：对晶片进行热处理的热处理部和用于将晶片舟装载到热处理部的装载部。加载部分连接到热处理部分，其中包括可移动支撑部件，驱动机构和垂直基板以及用于将内部保持在真空中的装载锁定室。可移动支撑构件支撑晶片舟。可移动支撑构件附接到垂直底板，使得其可以上下移动。驱动机构附接在垂直基板的与面向晶片舟皿的表面相对的主表面上。驱动机构驱动可动支架上下移动。热处理装置还包括晶片转印部，该晶片转印部包括定位平面对准机构和设置在定向平直对准机构附近的缓冲台。晶片传送部分包括用于在定向平坦对准机构和晶片舟皿之间传送晶片的晶片盒装置，缓冲台和晶片传送机器人。

6. 发明授权

US08574676B2 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US08574676B2
公开(公告)日：2013-11-05
申请号：US13130066
申请日：2009-11-19
申请人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
发明人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
IPC分类号： C23C16/40
CPC分类号： C23C16/45523 , C23C16/407 , C23C16/44 , H01L21/02181 , H01L21/02233 , H01L21/0228 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/31138 , H01L21/3141 , H01L21/31645 , H01L21/31662 , H01L21/321
摘要： A substrate processing method includes steps of: arranging a substrate in a chamber; introducing H2 gas at a first flow rate and O2 gas at a second flow rate independently from the H2 gas into a catalyst reaction portion in which catalyst is accommodated, wherein H2O gas produced from the H2 gas and the O2 gas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the O2 gas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the H2 gas and the O2 gas and reducing the flow rate of the O2 gas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.
摘要翻译：基板处理方法包括以下步骤：将基板布置在室中; 将第一流量的H 2气体和独立于H 2气体的第二流量的O 2气体引入到其中容纳催化剂的催化剂反应部分，其中喷出由H 2气体产生的H 2 O气体和与催化剂接触的O 2气体从催化剂反应部分向基板; 并且将引入到催化剂反应部的O 2气体的流量减少到低于第二流量的第三流量，其中引入H 2气体和O 2气体并降低O 2气体的流量的步骤以预定的重复频率以该顺序重复，从而处理基板。

7. 发明申请

US20110229637A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 失效
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20110229637A1
公开(公告)日：2011-09-22
申请号：US13130066
申请日：2009-11-19
申请人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijma , Katsuhiko Iwabuchi
发明人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijma , Katsuhiko Iwabuchi
IPC分类号： C23C16/40
CPC分类号： C23C16/45523 , C23C16/407 , C23C16/44 , H01L21/02181 , H01L21/02233 , H01L21/0228 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/31138 , H01L21/3141 , H01L21/31645 , H01L21/31662 , H01L21/321
摘要： A disclosed substrate processing method includes steps of: arranging a substrate in a chamber; introducing H2 gas at a first flow rate and O2 gas at a second flow rate independently from the H2 gas into a catalyst reaction portion in which catalyst is accommodated, wherein H2O gas produced from the H2 gas and the O2 gas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the O2 gas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the H2 gas and the O2 gas and reducing the flow rate of the O2 gas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.
摘要翻译：所公开的基板处理方法包括以下步骤：将基板布置在室中; 将第一流量的H 2气体和独立于H 2气体的第二流量的O 2气体引入到其中容纳催化剂的催化剂反应部分，其中喷出由H 2气体产生的H 2 O气体和与催化剂接触的O 2气体从催化剂反应部分向基板; 并且将引入到催化剂反应部的O 2气体的流量减少到低于第二流量的第三流量，其中引入H 2气体和O 2气体并降低O 2气体的流量的步骤以预定的重复频率以该顺序重复，从而处理基板。

8. 发明申请

US20050238464A1 Substrate processing device 有权
标题翻译：基板加工装置
公开(公告)号：US20050238464A1
公开(公告)日：2005-10-27
申请号：US10513813
申请日：2003-05-09
申请人： Takaaki Matsuoka , Katsuhiko Iwabuchi , Shigeru Ishizawa , Tsutomu Hiroki
发明人： Takaaki Matsuoka , Katsuhiko Iwabuchi , Shigeru Ishizawa , Tsutomu Hiroki
IPC分类号： H01L21/00 , B65G1/00
CPC分类号： H01L21/67173 , H01L21/67126 , H01L21/67742 , H01L21/67754 , Y10S414/139
摘要： Processing chambers (3A-3F) for applying a process to a substrate W housed therein are provided at a periphery of a conveying chamber 2. A conveying case (4) houses the substrate (W) in a state isolated from an outside atmosphere. The conveyance case (4) has a gate valve (30) and a transfer mechanism (22). A conveying mechanism (5) supports the conveyance case 4, and carries the conveyance case (4) to a position for conveying in/conveying out a substrate. The number of processing chambers connectable to a conveying chamber is not limited, and conveyance to the processing chamber can be executed while maintaining a predetermined ambience for an atmosphere of a substrate that is to be processed.
摘要翻译：在输送室2的周边设有用于对其中容纳的基板W进行处理的处理室（3A-3F）。输送箱（4）以与外界气氛隔离的状态容纳基板（W）。输送箱（4）具有闸阀（30）和输送机构（22）。输送机构（5）支撑输送箱4，将输送箱（4）运送到输送输送基板的位置。可连接到输送室的处理室的数量不受限制，并且可以在维持对待处理的基板的气氛的预定环境的同时执行到处理室的输送。

9. 发明授权

US5462397A Processing apparatus 失效
标题翻译：处理装置
公开(公告)号：US5462397A
公开(公告)日：1995-10-31
申请号：US213096
申请日：1994-03-15
申请人： Katsuhiko Iwabuchi
发明人： Katsuhiko Iwabuchi
IPC分类号： H01L21/205 , H01L21/22 , H01L21/31 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67757 , Y10S414/137 , Y10S414/139 , Y10S414/14
摘要： The processing apparatus of the present invention comprises a processing chamber for providing a predetermined processing to a processing object, a transfer chamber having transfer arm for transferring a holding member holding the processing object to/from the processing chamber, inactive gas supply and exhaust pipe for maintaining the inside of the transfer chamber to be in a predetermined inactive gas atmosphere, a holding member containing chamber, provided adjacent to the transfer chamber, having a capacity being capable of containing at least the holding member, and being capable of transferring the holding member to/from the transfer chamber in a state that an atmosphere of the transfer chamber is isolated from outside air, inside atmosphere substituting control for providing substitution so as to set the inside of the holding member containing chamber to be in a vacuum atmosphere or a predetermined inactive gas atmosphere, and an processing object transfer chamber, provided to be adjacent to the holding member containing chamber, having transfer arm for transferring the processing object to the holding member of the holding member containing chamber.
摘要翻译：本发明的处理装置包括：处理室，用于对处理对象提供预定的处理;传送室，具有用于将保持处理对象的保持构件传送到处理室的传送臂，用于将处理对象放置在处理室中的非活性气体供给和排出管将传送室的内部保持在预定的非活性气体气氛中，与传送室相邻设置的保持构件容纳室具有能够容纳至少保持构件的能力，并且能够将保持构件在转印室的气氛与外部空气隔离的状态下，在内部气氛替代控制中进行置换，以将保持构件容纳室的内部设定为真空气氛或预定的惰性气体气氛，以及处理对象传送室 e，其具有用于将处理对象传送到保持构件容纳室的保持构件的传送臂。

10. 发明授权

US07916447B2 Electrostatic chuck for substrate stage, electrode used for the chuck, and treating system having the chuck and electrode 失效
标题翻译：用于基板台的静电卡盘，用于卡盘的电极以及具有卡盘和电极的处理系统
公开(公告)号：US07916447B2
公开(公告)日：2011-03-29
申请号：US10563302
申请日：2004-06-25
申请人： Toshiki Kobayashi , Katsuhiko Iwabuchi
发明人： Toshiki Kobayashi , Katsuhiko Iwabuchi
IPC分类号： H01L21/683
CPC分类号： H02N13/00 , H01L21/6831
摘要： An electrostatic chuck is provided for a substrate stage that can be used in plasma treatment of various substrates such as a large-sized glass substrate for a flat panel display (FPD), a semiconductor wafer or the like. The electrostatic chuck is divided into a plurality of electrodes formed into nearly bar-like shapes. In accordance with an exemplary embodiment, each of the divided bar-like electrodes includes an inner electrode and a single layer thermally sprayed film formed on the surface of the inner electrode, with the bar-like electrodes disposed in parallel so as to form a plane electrode.
摘要翻译：为可用于诸如用于平板显示器（FPD）的大尺寸玻璃基板，半导体晶片等的各种基板的等离子体处理中的基板台设置有静电卡盘。静电卡盘被分成形成为几乎棒状的多个电极。根据示例性实施例，每个分开的棒状电极包括形成在内部电极的表面上的内部电极和单层热喷涂膜，棒状电极平行设置以形成平面电极。

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